Vishay GA200SA60UP User Manual
SOT-227
S
T
PRODUCT SUMMARY
V
CES
V
(typical) 1.60 V
CE(on)
V
GE
I
C
Vishay High Power Products
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
FEATURES
C
G
E
n-channel
600 V
15 V
100 A
• Ultrafast: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz
in hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 V
• Very low internal inductance (≤ 5 nH typical)
• Industry standard outline
• UL pending
• Completely lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
GA200SA60UP
RoH
COMPLIAN
AC/RMS
)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Gate to emitter voltage V
Reverse voltage avalanche energy E
RMS isolation voltage V
Maximum power dissipation P
Operating junction and storage
temperature range
Mounting torque 6-32 or M3 screw 1.3 (12)
CES
C
CM
LM
GE
ARV
ISOL
D
T
, T
J
Stg
TC = 25 °C 200
= 100 °C 100
T
C
VCC = 80 % (V
L = 10 µH, R
See fig. 13a
Repetitive rating; pulse width limited
by maximum junction temperature
Any terminal to case, t = 1 min 2500 V
TC = 25 °C 500
T
= 100 °C 200
C
), VGE = 20 V,
CES
= 2.0 Ω,
G
600 V
400
400
± 20 V
160 mJ
W
- 55 to + 150 °C
N ⋅ m
(lbf ⋅ in)
A
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case R
Case to sink, flat, greased surface R
Weight of module 30 - g
thJC
thCS
-0.25
0.05 -
°C/W
Document Number: 94364 For technical questions, contact: ind-modules@vishay.com
Revision: 29-Apr-08 1
www.vishay.com
GA200SA60UP
Vishay High Power Products
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Emitter to collector breakdown voltage V
Temperature coeff. of breakdown voltage ΔV
Collector to emitter saturation voltage V
Gate threshold voltage V
Temperature coeff. of threshold voltage ΔV
Forward transconductance g
Zero gate voltage collector current I
Gate to emitter leakage current I
(BR)CES
(BR)ECS
(BR)CES
CE(on)
GE(th)
/ΔTJVCE = VGE, IC = 2.0 mA - - 11 - mV/°C
GE(th)
fe
CES
GES
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate-collector charge (turn-on) Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total switching loss E
Internal emitter inductance L
Input capacitance C
Reverse transfer capacitance C
g
ge
gc
d(on)
r
d(off)
f
on
off
ts
d(on)
r
d(off)
f
ts
E
ies
oes
res
VGE = 0 V, IC = 250 µA 600 - -
VGE = 0 V, IC = 1.0 A
Pulse width ≤ 80 µs; duty factor ≤ 0.1 %
18 - -
/ΔTJVGE = 0 V, IC = 10 mA - 0.38 - V/°C
IC = 100 A
V
= 15 V
= 200 A - 1.92 -
I
C
I
= 100 A, TJ = 150 °C - 1.54 -
C
GE
See fig. 2, 5
- 1.60 1.9
VCE = VGE, IC = 250 µA 3.0 - 6.0
VCE = 100 V, IC = 100 A
Pulse width 5.0 µs, single shot
79 - - S
VGE = 0 V, VCE = 600 V - - 1.0
V
= 0 V, VCE = 600 V, TJ = 150 °C - - 10
GE
VGE = ± 20 V - - ± 250 nA
IC = 100 A
= 400 V
V
CC
= 15 V; See fig. 8
V
GE
TJ = 25 °C
= 100 A
I
C
= 480 V
V
CC
= 15 V
V
GE
= 2.0 Ω
R
G
Energy losses include “tail”
See fig. 9, 10, 14
TJ = 150 °C
= 100 A, VCC = 480 V
I
C
= 15 V, RG = 2.0 Ω
V
GE
Energy losses include “tail”
See fig. 10, 11, 14
- 770 1200
- 100 150
- 260 380
-54-
-79-
- 130 200
- 300 450
-0.98-
-3.48-
- 4.46 7.6
-56-
-75-
-160-
-460-
-7.24- mJ
Measured 5 mm from package - 5.0 - nH
VGE = 0 V
= 30 V
V
CC
ƒ = 1.0 MHz; See fig. 7
- 16 500 -
- 1000 -
-200-
V
V
mA
nCGate-emitter charge (turn-on) Q
ns
mJTurn-off switching loss E
ns
pFOutput capacitance C
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94364
2 Revision: 29-Apr-08
GA200SA60UP
200
160
120
Load Current (A)
1000
Triangular wave:
80
Square wave:
40
0
0.1
Insulated Gate Bipolar Transistor
I
Clamp voltage:
80 % of rated
(Ultrafast Speed IGBT), 100 A
60 % of rated
voltage
I
Ideal diodes
1 10 100
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of Fundamental)
RMS
200
150
Vishay High Power Products
For both:
Duty cycle: 50 %
= 125 °C
T
J
= 90 °C
T
sink
Gate drive as specified
Power dissipation = 140 W
TJ = 150 °C
100
TJ = 25 °C
VGE = 15 V
- Collector to Emitter Current (A)
C
I
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5
20 µs pulse width
VCE - Collector to Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
TJ = 150 °C
TJ = 25 °C
100
VGE = 25 V
- Collector to Emitter Current (A)
C
I
10
5.0 6.0 7.0 8.0
5 µs pulse width
VGE - Gate to Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
50
Maximum DC Collector Current (A)
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
3
VGE = 15 V
80 µs pulse width
2
IC = 400 A
= 200 A
I
C
IC = 100 A
- Collector to Emitter Voltage (V)
CE
1
V
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Document Number: 94364 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 29-Apr-08 3
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