Vishay GA200SA60UP User Manual

SOT-227

S

T

PRODUCT SUMMARY

V

CES

V

(typical) 1.60 V

CE(on)

V

GE

I

C

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

FEATURES

C

G

E

n-channel

600 V

15 V

100 A

• Ultrafast: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz
in hard switching, > 200 kHz in resonant mode

• Very low conduction and switching losses

• Fully isolate package (2500 V

• Very low internal inductance (≤ 5 nH typical)

• Industry standard outline

• UL pending

• Completely lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Lower overall losses available at frequencies = 20 kHz

• Easy to assemble and parallel

• Direct mounting to heatsink

• Lower EMI, requires less snubbing

• Plug-in compatible with other SOT-227 packages

GA200SA60UP

RoH

COMPLIAN

AC/RMS

)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Gate to emitter voltage V

Reverse voltage avalanche energy E

RMS isolation voltage V

Maximum power dissipation P

Operating junction and storage
temperature range

Mounting torque 6-32 or M3 screw 1.3 (12)

CES

C

CM

LM

GE

ARV

ISOL

D

T

, T

J

Stg

TC = 25 °C 200

= 100 °C 100

T

C

VCC = 80 % (V
L = 10 µH, R
See fig. 13a

Repetitive rating; pulse width limited
by maximum junction temperature

Any terminal to case, t = 1 min 2500 V

TC = 25 °C 500

T

= 100 °C 200

C

), VGE = 20 V,

CES

= 2.0 Ω,

G

600 V

400

400

± 20 V

160 mJ

W

- 55 to + 150 °C

N ⋅ m

(lbf ⋅ in)

A

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case R

Case to sink, flat, greased surface R

Weight of module 30 - g

thJC

thCS

-0.25

0.05 -

°C/W

Document Number: 94364 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

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GA200SA60UP

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Emitter to collector breakdown voltage V

Temperature coeff. of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage ΔV

Forward transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

(BR)CES

(BR)ECS

(BR)CES

CE(on)

GE(th)

/ΔTJVCE = VGE, IC = 2.0 mA - - 11 - mV/°C

GE(th)

fe

CES

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate-collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

g

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

E

ies

oes

res

VGE = 0 V, IC = 250 µA 600 - -

VGE = 0 V, IC = 1.0 A
Pulse width ≤ 80 µs; duty factor ≤ 0.1 %

18 - -

/ΔTJVGE = 0 V, IC = 10 mA - 0.38 - V/°C

IC = 100 A

V

= 15 V

= 200 A - 1.92 -

I

C

I

= 100 A, TJ = 150 °C - 1.54 -

C

GE

See fig. 2, 5

- 1.60 1.9

VCE = VGE, IC = 250 µA 3.0 - 6.0

VCE = 100 V, IC = 100 A
Pulse width 5.0 µs, single shot

79 - - S

VGE = 0 V, VCE = 600 V - - 1.0

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

IC = 100 A

= 400 V

V

CC

= 15 V; See fig. 8

V

GE

TJ = 25 °C

= 100 A

I

C

= 480 V

V

CC

= 15 V

V

GE

= 2.0 Ω

R

G

Energy losses include “tail”

See fig. 9, 10, 14

TJ = 150 °C

= 100 A, VCC = 480 V

I

C

= 15 V, RG = 2.0 Ω

V

GE

Energy losses include “tail”

See fig. 10, 11, 14

- 770 1200

- 100 150

- 260 380

-54-

-79-

- 130 200

- 300 450

-0.98-

-3.48-

- 4.46 7.6

-56-

-75-

-160-

-460-

-7.24- mJ

Measured 5 mm from package - 5.0 - nH

VGE = 0 V

= 30 V

V

CC

ƒ = 1.0 MHz; See fig. 7

- 16 500 -

- 1000 -

-200-

V

V

mA

nCGate-emitter charge (turn-on) Q

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

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Document Number: 94364

2 Revision: 29-Apr-08

GA200SA60UP

200

160

120

Load Current (A)

1000

Triangular wave:

80

Square wave:

40

0

0.1

Insulated Gate Bipolar Transistor

I

Clamp voltage:
80 % of rated

(Ultrafast Speed IGBT), 100 A

60 % of rated
voltage

I

Ideal diodes

1 10 100

f - Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

200

150

Vishay High Power Products

For both:

Duty cycle: 50 %

= 125 °C

T

J

= 90 °C

T

sink

Gate drive as specified
Power dissipation = 140 W

TJ = 150 °C

100

TJ = 25 °C

VGE = 15 V

- Collector to Emitter Current (A)

C

I

10

0.5 1.0 1.5 2.0 2.5 3.0 3.5

20 µs pulse width

VCE - Collector to Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

1000

TJ = 150 °C

TJ = 25 °C

100

VGE = 25 V

- Collector to Emitter Current (A)

C

I

10

5.0 6.0 7.0 8.0

5 µs pulse width

VGE - Gate to Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

100

50

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

TC - Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Case Temperature

3

VGE = 15 V
80 µs pulse width

2

IC = 400 A

= 200 A

I

C

IC = 100 A

- Collector to Emitter Voltage (V)

CE

1

V

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

Document Number: 94364 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Apr-08 3

GA200SA60UP

Vishay High Power Products

1

D = 0.50

0.1

D = 0.20

D = 0.10

D = 0.05

D = 0.02

0.01

- Thermal Response

thJC

Z

30 000

25 000

20 000

C

15 000

10 000

C - Capacitance (pF)

5000

C

0

1 10 100

VCE - Collector to Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage

D = 0.01

(thermal resistance)

0.001

0.00001 0.0001 0.001 0.01 0.1 1

Fig. 6 - Maximum Effektive Transient Thermal Impedance, Junction to Case

VGE = 0 V, f = 1 MHz

= Cge + Cgc, Cce shorted

C

ies

= C

C

res

gc

C

= Cce + C

oes

ies

C

oes

res

gc

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

Single pulse

t1 - Rectangular Pulse Duration (s)

60

50

40

30

20

10

Total Switching Losses (mJ)

0

0 102030405060

Fig. 9 - Typical Switching Losses vs. Gate Resistance

P

DM

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

VCC = 480 V

= 15 V

V

GE

= 25 °C

T

J

= 200 A

I

C

RG - Gate Resistance (Ω)

1/t2

t

1

thJC

t

2

+ T

C

20

100

VCC = 400 V

= 110 A

I

C

16

12

10

IC = 350 A

IC = 200 A

8

4

- Gate to Emitter Voltage (V)

GE

V

0

0 200 400 600 800

QG - Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

Total Switching Losses (mJ)

1

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

IC = 100 A

RG = 2.0 Ω
V

= 15 V

GE

= 480 V

V

CC

Junction Temperature

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Document Number: 94364

4 Revision: 29-Apr-08

r

GA200SA60UP

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

60

RG = 2.0 Ω

= 150 °C

T

J

50

40

30

20

10

Total Switching Losses (mJ)

Fig. 11 - Typical Switching Losses vs. Collector Current

1000

= 480 V

V

CC

V

= 15 V

GE

0

0 100 200 300 400

IC - Collector Current (A)

VGE = 20 V

= 125 °C

T

J

Vishay High Power Products

L

V

*

50 V

* Driver same type as D.U.T.; V

Note: Due to the 50 V power supply, pulse width and inducto
will increase to obtain rated I

1000 V

121

Fig. 13a - Clamped Inductive Load Test Circuit

0 - 480 V

480 µF
960 V

Fig. 13b - Pulsed Collector Current Test Circuit

C

= 80 % of VCE (max)

C

d

RL ==

4 x I

D.U.T.

480 V

at 25 °C

C

2

100

- Collector Current (A)

C

I

Safe operating area

10

1 10 100 1000

50 V

1000 V

1

Driver*

2

L

V

I

C

C

D.U.T.

3

VCE - Collector to Emitter Voltage (V)

Fig. 12 - Turn-Off SOA

* Driver same type
as D.U.T., V

= 480 V

C

Fig. 14a - Switching Loss Test Circuit

1

2

90 %

3

V

C

90 %

10 %

5 %

I

C

t

d (on)

10 %

t

r

E

on

t

Ets = (Eon + E

d (off)

t

f

E

off

)

off

t = 5 µs

Fig. 14b - Switching Loss Waveforms

Document Number: 94364 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Apr-08 5

GA200SA60UP

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

G A 200 S A 60 U P

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - Generation 4, IGBT silicon, DBC construction

3 - Current rating (200 = 200 A)

4 - Single switch, no diode

5 - SOT-227

6 - Voltage rating (60 = 600 V)

7 - Speed/type (U = Ultrafast)

8 - None = Standard production

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

51324678

P = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95036

Packaging information http://www.vishay.com/doc?95037

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 29-Apr-08

Document Number: 94364

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1