Vishay GA200SA60SP Data Sheet

Vishay Semiconductors

Insulated Gate Bipolar Transistor

GA200SA60SP

Ultralow V

CE(on)

, 342 A

FEATURES

• Standard: Optimized for minimum saturation
voltage and low speed up to 5 kHz

• Lowest conduction losses available

• Fully isolated package (2500 V

AC

)

• Very low internal inductance (5 nH typical)

• Industry standard outline

SOT-227

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

PRODUCT SUMMARY

V

CES

V

(typical) at 200 A, 25 °C 1.33 V

CE(on)

I

at TC = 97 °C

C

Note

(1)

Maximum I
maximum temperature of terminals

RMS

(1)

current admitted 100 A to do not exceed the

600 V

200 A

• Designed and qualified for industrial level

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped Inductive load current I

Gate to emitter voltage V

Reverse voltage avalanche energy E

RMS isolation voltage V

Maximum power dissipation P

Operating junction and storage
temperature range

Mounting torque 6-32 or M3 screw 12 (1.3) lbf in (N  m)

Note

(1)

Maximum I

current admitted 100 A to do not exceed the maximum temperature of terminals

RMS

CES

TC = 25 °C 342

(1)

C

CM

LM

GE

ARV

ISOL

T

, T

J

T

= 97 °C 200

C

Repetitive rating; VGE = 20 V, pulse width limited
by maximum junction temperature
See fig. 15

VCC = 80 % (V
L = 10 μH, R
See fig. 14

Repetitive rating; pulse width limited by
maximum junction temperature

Any terminal to case, t = 1 minute 2500 V

TC = 25 °C 781

D

T

= 100 °C 312

C

Stg

), VGE = 20 V,

CES

= 2.0 ,

g

600 V

400

400

± 20 V

155 mJ

W

- 55 to + 150 °C

A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case R

Case to sink, flat, greased surface R

Weight of module 30 - g

Document Number: 94363 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

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thJC

thCS

-0.16

0.05 -

°C/W

GA200SA60SP

Vishay Semiconductors

Insulated Gate Bipolar Transistor

Ultralow V

CE(on)

, 342 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Emitter to collector breakdown voltage

Temperature coeff. of breakdown voltage V

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage V

Forward transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

Notes

(1)

Pulse width  80 μs; duty factor  0.1 %

(2)

Pulse width 5.0 μs, single shot

(BR)CES

V

(BR)ECS

/TJVGE = 0 V, IC = 1.0 mA - 0.62 - V/°C

(BR)CES

CE(on)

GE(th)

/T

GE(th)

(2)

fe

CES

GES

VGE = 0 V, IC = 250 μA 600 - -

(1)

VGE = 0 V, IC = 1.0 A 18 - -

IC = 100 A

V

= 15 V

I

= 200 A - 1.33 -

C

I

= 100 A, TJ = 150 °C - 1.02 -

C

GE

See fig. 2, 5

- 1.10 1.3

VCE = VGE, IC = 250 μA 3.0 - 6.0

VCE = VGE, IC = 2 mA - - 10 - mV/°C

J

VCE = 100 V, IC = 100 A 90 150 - S

VGE = 0 V, VCE = 600 V - - 1.0

V

= 0 V, VCE = 10 V, TJ = 150 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

V

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

ies

oes

res

g

IC = 100 A

= 400 V

V

CC

= 15 V; See fig. 8

V

GE

TJ = 25 °C

= 100 A

I

C

= 480 V

V

CC

= 15 V

V

GE

= 2.0 

R

g

Energy losses include “tail”

See fig. 9, 10, 13

TJ = 150 °C

= 100 A, VCC = 480 V

I

C

= 15 V, Rg = 2.0 

V

GE

Energy losses include “tail”

See fig. 10, 11, 13

E

Between lead, and center of
the die contact

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz; See fig. 7

- 770 1200

- 100 150

nCGate emitter charge (turn-on) Q

- 260 380

-78-

-56-

- 890 1300

ns

- 390 580

-0.98-

- 17.4 -

mJTurn-off switching loss E

- 18.4 25.5

-72-

-60-

-1500-

ns

-660-

- 35.7 - mJ

-5.0 - nH

- 16 250 -

-1040-

pFOutput capacitance C

-190-

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For both:

Duty cycle: 50 %
T

J

= 125 °C

T

sink

= 90 °C
Gate drive as specified
Power dissipation = 140 W

0

250

0.1

f - Frequency (kHz)

Load Current (A)

1 10 100

200

150

100

50

Clamp voltage:
80 % of rated

Triangular wave:

I

60 % of rated
voltage

Ideal diodes

Square wave:

I

1

10

100

1000

0.5 1.0 1.5 2.0 2.5

VCE - Collector to Emitter Voltage (V)

I

C

- Collector to Emitter Current (A)

VGE = 15 V

20 µs pulse width

TJ = 150 °C

TJ = 25 °C

0

80

120

160

40

20

100

140

60

0 50 100 150 250200 300 350

T

C

- Case Temperature (°C)

Maximum DC Collector Current (A)

DC

1

2

3

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

V

CE

- Collector to Emitter Voltage (V)

VGE = 15 V

80 µs pulse width

IC = 400 A

IC = 200 A

IC = 100 A

GA200SA60SP

Insulated Gate Bipolar Transistor

Ultralow V

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

CE(on)

RMS

, 342 A

of Fundamental)

Vishay Semiconductors

Fig. 2 - Typical Output Characteristics

1000

100

- Collector to Emitter Current (A)

C

I

10

567

VGE - Gate to Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

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Revision: 22-Jul-10 [e-mail]

Fig. 4 - Maximum Collector Current vs. Case Temperature

TJ = 150 °C

TJ = 25 °C

VCC = 50 V
5 µs pulse width

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Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature