VISHAY DG411HS, DG412HS, DG413HS Technical data

VISHAY DG411HS, DG412HS, DG413HS Technical data

DG411HS/412HS/413HS

Vishay Siliconix

Precision Monolithic Quad SPST CMOS Analog Switches

DESCRIPTION

The DG411HS series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 µW) with high speed (tON: 68 ns), the DG411HS family is ideally suited for portable and battery powered industrial and military applications.

To achieve high-voltage ratings and superior switching performance, the DG411HS series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup.

Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off.

The DG411HS and DG412HS respond to opposite control logic as shown in the Truth Table. The DG413HS has two normally open and two normally closed switches.

FEATURES

• 44 V Supply Max Rating

 

• ± 15 V Analog Signal Range

Pb-free

 

 

On-Resistance - rDS(on): 25 Ω

Available

RoHS*

Fast Switching - tON: 68 ns

COMPLIANT

Ultra Low Power - PD: 0.35 µW

TTL, CMOS Compatible

Single Supply Capability

BENEFITS

Widest Dynamic Range

Low Signal Errors and Distortion

Break-Before-Make Switching Action

Simple Interfacing

APPLICATIONS

Precision Automatic Test Equipment

Precision Data Acquisition

Communication Systems

Battery Powered Systems

Computer Peripherals

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG411HS

DG411HS

DG411HS

 

QFN16

 

Dual-In-Line and SOIC

IN1

1

16

IN2

D1

2

15

D2

S1

3

14

S2

V-

4

13

V+

GND

5

12

VL

S4

6

11

S3

D4

7

10

D3

IN4

8

9

IN3

Top View

 

D1 IN1 IN2 D2

 

 

16

15

14

13

 

S1

1

 

 

12

S2

V-

2

 

 

11

V+

GND

3

 

 

10

VL

S4

4

 

 

9

S3

5

6

7

8

D4 IN4

IN3

D3

 

Top View

 

TRUTH TABLE

Logic

DG411HS

DG412HS

 

 

 

0

ON

OFF

 

 

 

1

OFF

ON

 

 

 

* Pb containing terminations are not RoHS compliant, exemptions may apply

LCC

D1 IN1 NC IN2 D2

Key

3 2 1 20 19

S1 4

V- 5

NC 6

GND 7

8

 

 

 

 

S4

 

 

 

 

9

10

11

12

13

D4 IN4

NC

IN3

D3

 

Top View

 

18

S2

 

17 V+

16 NC

15 VL

14

S3

 

Document Number: 72053

www.vishay.com

S-71155-Rev. B, 11-Jun-07

1

DG411HS/412HS/413HS

Vishay Siliconix

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG413HS

Dual-In-Line and SOIC

IN1

1

16

IN2

 

D1

2

15

D2

 

S1

3

14

S2

S1

V-

4

13

V+

V-

GND

5

12

VL

GND

S4

6

11

S3

S4

D4

7

10

D3

 

IN4

8

9

IN3

 

 

 

Top View

 

 

DG413HS

QFN16

D1 IN1 IN2 D2

 

16

15

14

13

 

1

 

 

12

S2

2

 

 

11

V+

3

 

 

10

VL

4

 

 

9

S3

5

6

7

8

D4 IN4

IN3

D3

 

Top View

 

DG413HS

 

 

 

LCC

 

 

Key

D1

IN1

NC

IN2

D2

 

3

2

1

20

19

 

 

 

S1

4

 

 

 

18

S2

 

 

 

 

 

V-

5

 

 

 

17

V+

 

 

 

 

 

NC

6

 

 

 

16

NC

 

 

 

 

 

GND

7

 

 

 

15

VL

 

 

 

 

S4

8

 

 

 

14

S3

 

 

 

 

 

 

9

10

11

12

13

 

 

D4

IN4 NC IN3

D3

 

 

 

Top View

 

 

TRUTH TABLE

 

 

 

 

 

Logic

 

SW1, SW4

SW2, SW3

 

 

0

 

OFF

ON

 

 

 

 

 

 

 

 

 

1

 

ON

OFF

 

 

 

 

 

 

 

 

 

 

 

 

 

ORDERING INFORMATION

 

 

 

Temp Range

 

 

Package

 

Part Number

 

 

 

 

 

 

DG411HS/412HS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DG411HSDJ

 

 

 

 

16-Pin Plastic DIP

 

DG411HSDJ-E3

 

 

 

 

 

 

 

 

 

 

 

DG412HSDJ

 

 

 

 

 

 

 

 

 

 

 

 

DG412HSDJ-E3

 

 

 

 

 

 

 

 

 

 

 

 

 

DG411HSDY

 

 

 

 

 

 

DG411HSDY-E3

- 40 to 85 °C

 

 

 

 

DG411HSDY-T1

 

 

 

 

DG411HSDY-T1-E3

 

 

 

 

16-Pin Narrow SOIC

 

 

 

 

 

 

 

 

 

 

 

 

DG412HSDY

 

 

 

 

 

 

 

 

 

 

 

 

DG412HSDY-E3

 

 

 

 

 

 

DG412HSDY-T1

 

 

 

 

 

 

DG412HSDY-T1-E3

 

 

 

 

 

 

 

 

 

 

 

16-Pin QFN 4 x 4 mm

 

DG411HSDN-T1-E4

 

 

 

 

 

 

 

 

 

 

 

DG412HSDN-T1-E4

 

 

 

 

 

 

 

 

 

 

 

 

DG413HS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

16-Pin Plastic DIP

 

DG413HSDJ

 

 

 

 

 

DG413HSDJ-E3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DG413HSDY

- 40 to 85 °C

 

 

16-Pin Narrow SOIC

 

DG413HSDY-E3

 

 

 

 

 

DG413HSDY-T1

 

 

 

 

 

 

 

 

 

 

 

 

DG413HSDY-T1-E3

 

 

 

 

 

 

 

 

 

 

 

16-Pin QFN 4 x 4 mm

 

DG413HSDN-T1-E4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

www.vishay.com

 

 

 

 

Document Number: 72053

2

 

 

 

 

 

S-71155-Rev. B, 11-Jun-07

DG411HS/412HS/413HS

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Parameter

 

 

Limit

Unit

 

 

 

 

 

V+ to V-

 

 

44

 

 

 

 

 

 

GND to V-

 

 

25

 

 

 

 

 

V

VL

 

 

(GND - 0.3) to (V+) + 0.3

Digital Inputsa, V , V

D

 

(V-) - 2 to (V+) + 2

 

S

 

or 30 mA, whichever occurs first

 

Continuous Current (Any Terminal)

 

30

mA

 

 

 

 

Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)

100

 

 

 

 

 

 

Storage Temperature

(AK, AZ Suffix)

- 65 to 150

°C

 

 

(DJ, DY, DN Suffix)

- 65 to 125

 

 

 

 

 

 

 

 

 

 

16-Pin Plastic DIPc

470

 

 

 

16-Pin Narrow SOICd

600

 

Power Dissipation (Package)b

16-Pin CerDIPe

900

mW

 

 

LCC-20e

900

 

 

 

16-Pin (4 x 4 mm) QFNf

1880

 

Notes:

a.Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b.All leads welded or soldered to PC Board.

c.Derate 6 mW/°C above 25 °C.

d.Derate 7.6 mW/°C above 75 °C.

e.Derate 12 mW/°C above 75 °C.

f.Derate 23.5 mW/°C above 70 °C.

SPECIFICATIONSa

 

 

 

 

 

 

 

 

 

 

 

Test Conditions

 

 

A Suffix

D Suffix

 

 

 

Unless Specified

 

 

- 55 to 125 °C

- 40 to 85 °C

 

 

 

V+ = 15 V, V- = - 15 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

VL = 5 V, VIN = 2.4 V, 0.8 Vf

Tempb

Typc

Mind

Maxd

Mind

Maxd

Unit

Analog Switch

 

 

 

 

 

 

 

 

 

Analog Signal Rangee

VANALOG

 

Full

 

- 15

15

- 15

15

V

Drain-Source

rDS(on)

V+ = 13.5 V, V- = - 13.5 V

Room

25

 

35

 

35

Ω

On-Resistance

IS = - 10 mA, VD = ± 8.5 V

Full

 

 

45

 

45

 

 

 

 

 

 

IS(off)

 

Room

± 0.1

- 0.25

0.25

- 0.25

0.25

 

Switch Off

V+ = 16.5 V, V- = - 16.5 V

Full

 

- 20

20

- 5

5

 

 

 

 

Leakage Current

ID(off)

VD = ± 15.5 mA, VS = ± 15.5 V

Room

± 0.1

- 0.25

0.25

- 0.25

0.25

nA

 

 

Full

 

- 20

20

- 5

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Channel On

ID(on)

V+ = 16.5 V, V- = - 16.5 V

Room

± 0.1

- 0.4

0.4

- 0.4

0.4

 

Leakage Current

VD = VS = ± 15.5 V

Full

 

- 40

40

- 10

10

 

 

 

 

Digital Control

 

 

 

 

 

 

 

 

 

Input Current, VIN Low

IIL

VIN Under Test = 0.8 V

Full

0.005

- 0.5

0.5

- 0.5

0.5

µA

Input Current, VIN High

IIH

VIN Under Test = 2.4 V

Full

0.005

- 0.5

0.5

- 0.5

0.5

 

Input Capacitancee

CIN

f = 1 MHz

Room

5

 

 

 

 

pF

Dynamic Characteristics

 

 

 

 

 

 

 

 

 

Turn-On Time

tON

RL = 300 Ω, CL = 35 pF

Room

68

 

105

 

105

 

Full

 

 

127

 

116

 

 

 

 

 

 

 

Turn-Off Time

tOFF

VS = ± 10 V, See Figure 2

Room

42

 

80

 

80

ns

 

Full

 

 

94

 

90

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Break-Before-Make

tD

DG413HS Only, VS = 10 V

Room

20

 

 

 

 

 

Time Delay

RL = 300 Ω, CL = 35 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

Charge Injectione

Q

Vg = 0 V, Rg = 0 Ω, CL = 10 nF

Room

22

 

 

 

 

pC

 

 

 

 

 

 

 

 

 

 

Document Number: 72053

 

 

 

 

 

 

 

www.vishay.com

S-71155-Rev. B, 11-Jun-07

 

 

 

 

 

 

 

 

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