VISHAY DG411HS, DG412HS, DG413HS Technical data

DG411HS/412HS/413HS

Vishay Siliconix

Precision Monolithic Quad SPST CMOS Analog Switches

DESCRIPTION

The DG411HS series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 µW) with high speed (t suited for portable and battery powered industrial and military applications.

To achieve high-voltage ratings and superior switching performance, the DG411HS series was built on Vishay Siliconix’s high voltage silicon gate process. An epitaxial layer prevents latchup.

Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off.

The DG411HS and DG412HS respond to opposite control logic as shown in the Truth Table. The DG413HS has two normally open and two normally closed switches.

: 68 ns), the DG411HS family is ideally

ON

FEATURES

• 44 V Supply Max Rating

• ± 15 V Analog Signal Range

• On-Resistance - r

• Fast Switching - t

• Ultra Low Power - P

DS(on)

: 68 ns

ON

D

: 25 Ω

: 0.35 µW

• TTL, CMOS Compatible

• Single Supply Capability

BENEFITS

• Widest Dynamic Range

• Low Signal Errors and Distortion

• Break-Before-Make Switching Action

• Simple Interfacing

APPLICATIONS

• Precision Automatic Test Equipment

• Precision Data Acquisition

• Communication Systems

• Battery Powered Systems

• Computer Peripherals

Pb-free

Available

RoHS*

COMPLIANT

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG411HS

QFN16

D1IN

16 15 14 13

5

D4IN

IN2D

1

6

7

IN3D

4

Top View

2

S

12

2

V+

11

V

L

10

S

3

9

8

3

Dual-In-Line and SOIC

IN

1

D

2

1

S

3

1

V-

4

5

GND

S

6

4

D

7

4

IN

8

4

DG411HS

Top View

IN

16

2

D

15

2

S

14

2

V+

13

V

12

L

S

11

3

D

10

3

9

IN

3

S

V-

GND

S

1

2

3

4

TRUTH TABLE

Logic DG411HS DG412HS

0ONOFF

1OFFON

* Pb containing terminations are not RoHS compliant, exemptions may apply

DG411HS

LCC

NC IN2D

D1IN

Key

4

S

1

5

V- V+

6

NC NC

7

GND V

8

S

4

1

1231920

910111213

NC IN

D4IN

4

Top View

2

18

17

16

15

14

3D3

S

2

L

S

3

Document Number: 72053 S-71155-Rev. B, 11-Jun-07

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1

DG411HS/412HS/413HS

Vishay Siliconix

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG413HS

Dual-In-Line and SOIC

IN

1

D

2

1

3

S

1

V- V+

4

5

GND V

S

6

4

7

D

4

8

IN

4

Top View

16

15

14

13

12

11

10

9

TRUTH TABLE

Logic

0OFFON

1ONOFF

SW

IN

D

2

S

2

L

S

3

D

3

IN

, SW

1

DG413HS

QFN16

IN2D

1

2

3

4

SW2, SW

D1IN

16 15 14 13

6

5

D4IN

Top View

3

2

S

1

V-

GND

S

4

3

4

1

4

7

IN3D

2

S

12

2

V+

11

V

10

L

S

3

9

8

3

Key

4

S

1

5

V- V+

6

NC NC

7

GND V

8

S

4

DG413HS

LCC

D1IN

910111213

D4IN

NC IN2D

1

1231920

NC IN

4

Top View

2

3D3

18

S

2

17

16

15

L

14

S

3

ORDERING INFORMATION

Temp Range Package Part Number

DG411HS/412HS

- 40 to 85 °C

DG413HS

- 40 to 85 °C

DG411HSDJ

16-Pin Plastic DIP

DG411HSDJ-E3

DG412HSDJ

DG412HSDJ-E3

DG411HSDY DG411HSDY-E3 DG411HSDY-T1

16-Pin Narrow SOIC

DG411HSDY-T1-E3

DG412HSDY DG412HSDY-E3 DG412HSDY-T1

DG412HSDY-T1-E3

16-Pin QFN 4 x 4 mm

16-Pin Plastic DIP

DG411HSDN-T1-E4

DG412HSDN-T1-E4

DG413HSDJ DG413HSDJ-E3

DG413HSDY

16-Pin Narrow SOIC

DG413HSDY-E3 DG413HSDY-T1

DG413HSDY-T1-E3

16-Pin QFN 4 x 4 mm DG413HSDN-T1-E4

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Document Number: 72053

S-71155-Rev. B, 11-Jun-07

DG411HS/412HS/413HS

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Parameter Limit Unit

V+ to V- 44

GND to V- 25

V

L

a

Digital Inputs

, VS, V

D

Continuous Current (Any Terminal) 30

Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100

Storage Temperature

Power Dissipation (Package)

b

(AK, AZ Suffix) - 65 to 150

(DJ, DY, DN Suffix) - 65 to 125

16-Pin Plastic DIP

16-Pin Narrow SOIC

16-Pin CerDIP

e

LCC-20

16-Pin (4 x 4 mm) QFN

c

d

e

f

Notes: a. Signals on S b. All leads welded or soldered to PC Board.

, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

X

c. Derate 6 mW/°C above 25 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. f. Derate 23.5 mW/°C above 70 °C.

(GND - 0.3) to (V+) + 0.3

(V-) - 2 to (V+) + 2

or 30 mA, whichever occurs first

470

600

900

1880

V

mA

°C

mW

SPECIFICATIONSa

Test Conditions

Unless Specified

V+ = 15 V, V- = - 15 V

V

Parameter Symbol

Analog Switch

Analog Signal Range

Drain-Source On-Resistance

Switch Off Leakage Current

Channel On Leakage Current

e

V

ANALOG

r

DS(on)

I

S(off)

I

D(off)

I

D(on)

Digital Control

Input Current, V

Input Capacitance

IN

Low

High

e

I

IL

I

IH

C

IN

Dynamic Characteristics

Tu r n - O n Time

Turn-Off Time

Break-Before-Make Time Delay

Charge Injection

e

t

OFF

ON

t

Q

D

= 5 V, VIN = 2.4 V, 0.8 V

L

V+ = 13.5 V, V- = - 13.5 V

I

= - 10 mA, VD = ± 8.5 V

S

V+ = 16.5 V, V- = - 16.5 V

V

= ± 15.5 mA, VS = ± 15.5 V

D

V+ = 16.5 V, V- = - 16.5 V

V

= VS = ± 15.5 V

D

VIN Under Test = 0.8 V

VIN Under Test = 2.4 V

f = 1 MHz Room 5 pF

RL = 300 Ω, CL = 35 pF

= ± 10 V, See Figure 2

V

S

DG413HS Only, VS = 10 V

R

= 300 Ω, CL = 35 pF

L

= 0 V, Rg = 0 Ω, CL = 10 nF

V

g

f

Tem pb Typ

c

A Suffix

- 55 to 125 °C

d

MaxdMindMax

D Suffix

- 40 to 85 °C

Full - 15 15 - 15 15 V

Room

Full

Room

Full

Room

Full

Room

Full

25 35

± 0.1 - 0.25

- 20

± 0.1 - 0.25

- 20

± 0.1 - 0.4

- 40

45

0.2520- 0.25

- 5

0.2520- 0.25

- 5

0.440- 0.4

- 10

Full 0.005 - 0.5 0.5 - 0.5 0.5

Room

Full

Room

Full

68 105

127

42 80

94

Room 20

Room 22 pC

35 45

0.25 5

0.4 10

105 116

80 90

d

Unit Min

Ω

nA

µA

ns

Document Number: 72053 S-71155-Rev. B, 11-Jun-07

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3

DG411HS/412HS/413HS

Vishay Siliconix

SPECIFICATIONSa

Test Conditions

Unless Specified

V+ = 15 V, V- = - 15 V

= 5 V, VIN = 2.4 V, 0.8 V

Parameter Symbol

Dynamic Characteristics (Cont’d)

Off Isolation

e

Channel-to-Channel Crosstalk

Source Off Capacitance

Drain Off Capacitance

Channel On Capacitance

e

OIRR

e

X

TA LK

C

S(off)

C

D(off)

C

D(on)

Power Supplies

Positive Supply Current I+

Negative Supply Current I-

Logic Supply Current

Ground Current

I

GND

V

L

R

= 50 Ω, CL = 5 pF

L

f = 1 MHz

V+ = 16.5 V, V- = - 16.5 V

V

= 0 or 5 V

I

L

IN

f

Tem pb Typ

Room - 91

Room - 88

Room 12

Room 30

Room

Full

Room

Full

Room

Full

Room

Full

A Suffix

- 55 to 125 °C

c

d

0.0001 1

- 0.0001 - 1

- 5

0.0001 1

- 0.0001 - 1

- 5

D Suffix

- 40 to 85 °C

MaxdMindMax

5

1 5

- 1

- 5

5

- 1

- 5

1 5

d

Unit Min

dB

pF

µA

SPECIFICATIONSa FOR UNIPOLAR SUPPLIES

Test Conditions

Unless Specified

V+ = 12 V, V- = 0 V

= 5 V, VIN = 2.4 V, 0.8 V

Parameter Symbol

V

L

f

Tem pb Typ

c

A Suffix

- 55 to 125 °C

d

MaxdMindMax

Analog Switch

Analog Signal Range

e

Drain-Source On-Resistance

V

ANALOG

r

DS(on)

V+ = 10.8 V, IS = - 10 mA

= 3 V, 8 V

V

D

Full 12 12 V

Room

Full

49 80

100

Dynamic Characteristics

Tur n-On Ti m e

Turn-Off Time

Break-Before-Make Time Delay

t

OFF

Charge Injection Q

ON

t

Room

RL = 300 Ω, CL = 35 pF

= 8 V, See Figure 2

V

S

D

DG413HS Only, VS = 8 V

= 300 Ω, CL = 35 pF

R

L

= 6 V, Rg = 0 Ω, CL = 1 nF

V

g

Hot

Room

Hot

Room 60

Room 60 pC

95 140

36 70

180

79

Power Supplies

Positive Supply Current I+

Negative Supply Current I-

Logic Supply Current

Ground Current

I

GND

Room

Hot

Room

I

V+ = 13.2 V, V

L

= 0 or 5 V

IN

Hot

Room

Hot

Room

Hot

0.0001 1

- 0.0001 - 1

- 5

0.0001 1

- 0.0001 - 1

- 5

5

Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V

= input voltage to perform proper function.

IN

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

D Suffix

- 40 to 85 °C

80

100

140 160

70 74

1 5

- 1

- 5

1 5

- 1

- 5

d

Unit Min

Ω

ns

µA

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Document Number: 72053

S-71155-Rev. B, 11-Jun-07

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

65

TA = 25 °C

55

± 5 V

DG411HS/412HS/413HS

Vishay Siliconix

300

250

V+ = 3.0 V

= 3 V

V

L

TA = 25 °C V

L

= 5 V

(pA)

D

, I

S

I

45

± 8 V

VD - Drain Voltage (V)

± 10 V

- Drain-Source On-Resistance (Ω)

DS(on)

r

35

25

15

5

- 20 - 15 - 10 - 5 0 5 10 15 20

On-Resistance vs. VD and Dual Supply Voltage

50

V+ = + 5 V V- = - 15 V

25

= 5 V

V

L

0

- 25

- 50

- 75

- 100

- 15 -10 - 5 0 5 10 15

VD or VS - Drain or Source Voltage (V)

I

D(on)

I

S(off)

I

D(off)

Leakage Current vs. Analog Voltage

± 12 V

± 15 V

± 20 V

200

V+ = 5.0 V

V+ = 8.0 V

V+ = 12.0 V

02468101214161820

- Drain Voltage (V)

V

D

- Drain-Source On-Resistance (Ω)

DS(on)

r

150

100

50

0

On-Resistance vs. VD and Unipolar Supply Voltage

45

40

35

30

25

20

15

- Drain-Source On-Resistance (Ω)

10

DS(on)

r

5

- 15 - 10 - 5 0 5 10 15

On-Resistance vs. V

125 °C

85 °C

25 °C

- 55 °C

V

- Drain Voltage (V)

D

and Temperature

D

V+ = 15.0 V

V+ = 20.0 V

V+ = 15 V V- = - 15 V

= 5 V

V

L

75

65

55

45

35

25

- Drain-Source On-Resistance (Ω) 15

DS(on)

r

5

024681012

On-Resistance vs. V

Document Number: 72053 S-71155-Rev. B, 11-Jun-07

125 °C

°C

85

25 °C

- 55 °C

VD - Drain Voltage (V)

and Temperature

D

V+ = 12 V V- = 0 V

= 5 V

V

L

0

0- 10

- 20

- 30

(dB)

- 40

- 50

TLAK

- 60

- 70

- 80

LOSS, OIRR, X

- 90

- 100

110

-

100 K 1 M

LOSS

X

TAL K

OIRR

10 M 100 M 1 G

Frequency (Hz)

V+ = 15 V V- = - 15 V

= 5 V

V

L

= 50 Ω

R

L

Insertion Loss, Off-Isolation, Crosstalk

vs. Frequency

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5

DG411HS/412HS/413HS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

80

60

40

20

0

- 20

- 40

Q - Charge Injection (pC)

- 60

- 80

- 100

- 15 - 10 - 5 0 5 10 15

V = ± 15 V

V = ± 12 V

Q - Charge Injection (pC)

V - Drain Voltage (V)

Charge Injection vs. Analog Voltage

100

80

60

40

20

0

- 20

- 40

- 60

- 80

- 100

- 15 - 10 - 5 0 5 10 15

V = ± 15 V

V = ± 12 V

VS - Source Voltage (V)

Charge Injection vs. Analog Voltage

(ns)

OFF

T

ON/

T

140

V+ = 15 V V- = - 15 V

= 5 V

V

120

100

L

80

60

40

20

- 55 - 35 - 15 5 25 45 65 85 105 125

t

ON

t

OFF

Temperature (°C)

Switching Time vs. Temperature

100 mA

10 mA

1 mA

100 µA

V+ = 15 V V- = - 15 V V

L

= 5 V

= 1 SW = 4 SW

I+, I-

(ns)

OFF

T

ON/

T

140

V+ = 12 V V- = 0 V V

= 5 V

120

100

80

60

40

20

L

t

ON

t

OFF

- 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (°C)

Switching Time vs. Temperature

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SUPPLY

10 µA

I

1 µA

100 nA

10 nA

100 1 k 10 k 100 k 1 M 10 M

10

f - Frequency (Hz)

I

L

Supply Current vs. Input Switching Frequency

Document Number: 72053

S-71155-Rev. B, 11-Jun-07

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

V+

V

L

Level

V

IN

Shift/ Drive

DG411HS/412HS/413HS

Vishay Siliconix

S

V-

V+

GND

V-

TEST CIRCUITS

V

L

± 10 V

S D

IN

GND

(includes fixture and stray capacitance)

C

L

VO = V

S

+ 15 V+ 5 V

V+

V-

- 15 V

R

RL + r

L

DS(on)

R

L

300 Ω

C

L

35 pF

Figure 1.

V

O

Figure 2. Switching Time

D

Logic Input

3 V

50 %

tr < 5 ns t

< 5 ns

f

0 V

t

OFF

Switch

Input*

V

S

V

O

90 %

0 V

t

ON

Note: Logic input waveform is inverted for switches that

have the opposite logic sense control

90 %

+ 5 V + 15 V

V

L

S

V

S1

V

S2

1

IN

1

S

2

IN

2

GND

CL (includes fixture and stray capacitance)

Document Number: 72053 S-71155-Rev. B, 11-Jun-07

V+

V-

- 15 V

Logic Input

D

1

V

D

2

R

L2

300 Ω

O2

C

L2

35 pF

R

L1

300 Ω

C

L1

35 pF

V

O1

Switch Output

3 V

50 %

0 V

V

S1

V

O1

90 %

0 V

V

S2

V

O2

0 V

90 %

t

D

t

D

Figure 3. Break-Before-Make (DG413HS)

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7

DG411HS/412HS/413HS

Vishay Siliconix

TEST CIRCUITS

+ 15 V+ 5 V

V

R

g

V

g

L

S

IN

3 V

GND

V+

D

V-

-15 V

V

O

C

L

1 nF

Figure 4. Charge Injection

ΔV

O

V

O

IN

X

IN

X

Q = ΔVO x C

OFFONOFF

L

V

S

Rg = 50 Ω

0 V, 2.4 V

X

TALK

C = RF bypass

+ 5 V

+ 15 V

C

V

L

S

IN

GND V-

- 15 V

Off Isolation = 20 log

C = RF Bypass

Figure 6. Off-Isolation

V

S

Rg = 50 Ω

Isolation = 20 log

C

V+

D

C

V

O

V

S

0 V, 2.4 V

V

O

V

S

V

O

R

L

50 Ω

+ 5 V

C

V

L

S

1

IN

1

S

NC

2

IN

2

GND V-

Figure 5. Crosstalk

0 V, 2.4 V

+ 15 V

V+

D

- 15 V

+ 5 V

C

V

IN

GND V-

C

1

50 Ω

2

V

O

R

L

C

+ 15 V

C

L V+

S

Impedance

D

or Equivalent

C

- 15 V

Figure 7. Source/Drain Capacitances

Meter

HP4192A

Analyzer

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72053.

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Document Number: 72053

S-71155-Rev. B, 11-Jun-07

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1

VISHAY DG411HS, DG412HS, DG413HS Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual

Disclaimer