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DG408L
Technical data
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VISHAY DG408L, DG409L Technical data

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DG408L/409L
Vishay Siliconix
Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
FEATURES BENEFITS APPLICATIONS
"3- to "6-V Dual Supply Operation
D Lower On-Resistance: r D Fast Switching: tON - 38 ns, t
DS(on)
- 17  T yp.
- 18 ns
OFF
D High Accuracy D Single and Dual Power Rail Capacity D Wide Operating Voltage Range D Simple Logic Interface
D Break-Before-Make Guaranteed D Low Leakage: I
- 0.2 nA Max.
S(off)
D Low Charge Injection: 1 pC D TTL, CMOS, LV Logic (3 V) Compatible D -82 dB Off-Isolation at 1 MHz D 2000-V ESD Protection (HBM)
DESCRIPTION
The DG408L/409L are low voltage pin -for -pin compatible companion devices to the industry standard DG408/409 with improved performance.
Using BiCMOS wafer fabrication technology allows the DG408L/409L to operate on single and dual supplies. Single supply voltage ranges from 3- to 12-V while dual supply operation is recommended with "3 to "6 V.
The DG408L is an 8-channel single-ended analog multiplexer
D Data Acquisition Systems D Battery Operated Equipment D Portable Test Equipment D Sample and Hold Circuits D Communication Systems D SDSL, DSLAM D Audio and Video Signal Routing
designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (A
, A1, A2). The DG409L
0
is a dual 4-channel differential analog multiplexer designed to connect one of four differential inputs to a common dual output as determined by its 2-bit binary address (A
, A1).
0
Break-before-make switching action to protect against momentary crosstalk between adjacent channels.
The DG408L/409L provides lower on-resistance, faster switching time, lower leakage, less power consumption and higher off-Isolation than the DG408/409.
FUNCTIONAL BLOCK DIAGRAMS AND PIN CONFIGURATIONS
DG408L DG409L
Document Number: 71342 S-03720—Rev. D, 07-Apr-03
Dual-In- Line, SOIC and TSSOP
A
0
1
EN
V- GND
S
1
S
2
S
3
S
4
D
Decoders/Drivers
2
3
4
5
6
7
89
Top View
A
1
16
A
2
15
14
V+
13
S
5
12
S
6
11
S
7
10
S
8
A
0
EN GND
V- V+
S
1a
S
2a
S
3a
S
4a
D
a
Dual-In- Line, SOIC and TSSOP
A
1
1
Decoders/Drivers
2
3
4
5
6
7
89
Top View
16
15
14
S
1b
13
S
2b
12
S
3b
11
S
4b
10
D
b
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1
DG408L/409L
Vishay Siliconix
TRUTH TABLES AND ORDERING INFORMATION
TRUTH TABLE  DG408L
A
2
X X X 0 None 0 0 0 1 1 0 0 1 1 2 0 1 0 1 3 0 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8
A
1
A
0
EN On Switch
TRUTH TABLE  DG409L
A
1
X X 0 None 0 0 1 1 0 1 1 2 1 0 1 3 1 1 1 4
A
0
Logic “0” = VAL v 0.8 V
“
Logic “1” = VAH w 2.4 V X = Don’t Care
EN On Switch
”
For low and high voltage levels for VAX and VEN consult “Digital Control” parameters for specific V+ operation.
ORDERING INFORMATION  DG408L
Temp Range Package Part Number
_
-40 to 85_C
-55 to 125_C
*Block Diagram and Pin Configuration not shown.
16-Pin SOIC DG408LDY
16-Pin TSSOP DG408LDQ
16-Pin CerDIP
LCC-20* DG408LAZ/883
DG408LAK DG408LAK/883
ORDERING INFORMATION  DG409L
Temp Range Package Part Number
_
-40 to 85_C
-55 to 125_C
*Block Diagram and Pin Configuration not shown.
16-Pin SOIC DG409LDY
16-Pin TSSOP DG409LDQ
16-Pin CerDIP
LCC-20* DG409LAZ/883
DG409LAK DG409LAK/883
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V-
V+ 14 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
Current (Any Terminal) 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) 100 mA. . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature: (A Suffix) -65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
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2
a
, VS, V
D
(D Suffix) -65 to 125_C. . . . . . . . . . . . . . . . . . . . . . . .
(V-) -0.3 V to (V+) +0.3 V. . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package) 16-Pin Plastic TSSOP 16-Pin Narrow SOIC 16-Pin CerDIP LCC-20 Notes
a. Signals on S
internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 7.6 mW/_C above 75_C. d. Derate 12 mW/_C above 75_C. e. Derate 10 mW/_C above 75_C.
d
e
, D
X
b
c
c
Ax, or EN exceeding V+ or V- will be clamped by
X,
Document Number: 71342
S-03720—Rev. D, 07-Apr-03
650 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
750 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS (SINGLE SUPPLY 12 V)
VD = 10.8 V, VD = 2 V or 9 V, IS = 10 mA
VEN = 0 V, VD = 11 V or 1 V
V
ns
F
DG408L/409L
Vishay Siliconix
Parameter Symbol
T est Conditions
Unless Otherwise Specified
V+ = 12 V, "10%, V- = 0 V
V
= 0.8 V or 2.4 V
EN
f
TempbTyp
A Suffix
-55 to 125_C
d
MincMaxcMincMax
D Suffix
-40 to 85_C
c
Unit
Analog Switch
Analog Signal Range Drain-Source On-Resistance r r
Matching
DS(on)
Between Channels On-Resistance Flatness
Switch Off Leakage Current
Channel On Leakage Current I
e
g
i
V
ANALOG
DS(on)
r
r
FLAT(on)
I
S(off)
I
D(off)
D(on)
Full 0 12 0 12 V
VD = 10.8 V, VD = 2 V or 9 V, IS = 10 mA
Sequence Each Switch On
DS
VD = 10.8 V, VD = 2 V or 9 V, IS = 10 mA
Room
Full
17 29
38
Room 1 3 3
29 35
Room 3 7 7
VEN = 0 V, VD = 11 V or 1 V
V
= 1 V or 11 V
S
V
= VD = 1 V or 11 V
S
Room
Full
Room
Full
Room
Full
-1
-15115-1-10110
-1
-15115-1-10110
-1
-15115-1-10110
nA
Digital Control
Logic High Input Voltage V Logic Low Input Voltage V Input Current I
INH INL
IN
VAX = VEN = 2.4 V or 0.8 V Full -1.5 1.5 -1 1 A
Full 2.4 2.4 Full 0.8 0.8
Dynamic Characteristics
Transition Time t
Break-Before-Make Time t
Enable Turn-On Time t
Enable Turn-Off Time t Charge Injection
Off Isolation Crosstalk Source Off Capacitance Drain Off Capacitance
Drain On Capacitance
e
e, h
e
e
e
e
VS1 = 8 V, VS8 = 0 V, (DG408L)
TRANS
OPEN
ON(EN)
OFF(EN)
V
S1b
V
S(all)
VAX = 0 V, VS1 = 5 V (DG408L)
VAX = 0 V, V
Q CL = 1 nF, V
OIRR
X
TALK
C C
C
S(off) D(off)
D(on)
f = 1 MHz, VS = 0 V, VEN = 0 V Room 7 f = 1 MHz, VD = 2.4 V, VEN = 0 V Room 20 f = 1 MHz, VD = 0 V, VEN = 2.4 V
= 8 V, V
= 0 V, (DG409L)
S4b
See Figure 2
= VDA = 5 V, See Figure 4
= 5 V (DG409L)
S1b
See Figure 3
= 0 V, R
GEN
GEN
f = 100 kHz, RL = 1 k
(DG409L only)
= 0 Room 1 5 5 pC
Room
Full
Room
Full
Room
Full
Room
Full
30 60
11 1 1
38 55
18 25
Room -70 Room -82
Room 31
68
60 65
ns
60
35
55 60
25 30
dB
p
Power Supplies
Power Supply Range V+ 3 12 3 12 V Power Supply Current I+ VEN = VA = 0 V or 5 V Room 0.2 0.7 0.7 mA
Document Number: 71342 S-03720—Rev. D, 07-Apr-03
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3
DG408L/409L
V+ = 5.5 V, V- = 5.5 V
V
ns pF
Vishay Siliconix
SPECIFICATIONS (DUAL SUPPLY V+ = 5 V, V = 5 V)
Parameter Symbol
Analog Switch
Analog Signal Range Drain-Source On-Resistance r
Switch Off Leakage Current
Channel On Leakage
a
Current
e
V
a
Digital Control
Logic High Input Voltage V Logic Low Input Voltage V Input Current
a
Dynamic Characteristics
Transition Time
Break-Before-Make Time
Enable Turn-On Time
Enable Turn-Off Time Source Off Capacitance
Drain Off Capacitance Drain On Capacitance
e
e
e
e
e e e
t
t
t
OFF(EN)
ANALOG
DS(on)
I
S(off)
I
D(off)
I
D(on)
INH INL
I
IN
TRANS
t
OPEN
ON(EN)
C
S(off)
C
D(off)
C
D(on)
T est Conditions
Unless Otherwise Specified
V+ = 5 V, V- = -5 V "10%, V- = 0 V
V
= 0.6 V or 2.4 V
EN
f
TempbTyp
A Suffix
-55 to 125_C
d
MincMaxcMincMax
-40 to 85_C
D Suffix
Full -5 5 -5 5 V
VD = "3.5 V, IS = 10 mA
Sequence Each Switch On
V+ = 5.5 V, V- = 5.5 V
VEN = 0 V, VD = "4.5 V, VS = #4.5 V
V+ = 5.5 V, V- = 5.5 V
V
= 2.4 V, VD = "4.5 V, VS = #4.5 V
EN
Room
Full
Room
Full
Room
Full
Room
Full
20 40
-15115
-15115
-15115
50
-1
-1
-1
-1
-10110
-1
-10110
-1
-10110
Full 2.4 2.4 Full 0.6 0.6
VAX = VEN = 2.4 V or 0.6 V Full -1.5 1.5 -1 1 A
VS1 = 3.5 V, VS8 = -3.5 V, (DG408L)
V
= 3.5 V, V
S1b
V
= VDA = 3.5 V, See Figure 4
S(all)
VAX = 0 V, VS1 = 3.5 V (DG408L)
VAX = 0 V, V
= -3.5 V, (DG409L)
S4b
See Figure 2
= 3.5 V (DG409L)
S1b
See Figure 3
Room
Full
Room
Full
Room
Full
Room
Full
30 60
78
8 1 1
25 55
20 40
68
50 f = 1 MHz, VS = 0 V, VEN = 0 V Room 6 f = 1 MHz, VD = 0 V, VEN = 0 V Room 15
f = 1 MHz, VD = 0 V, VEN = 2.4 V Room 29
c
Unit
40
50
nA
60 65
ns
55 60
40 45
pF
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Document Number: 71342
S-03720—Rev. D, 07-Apr-03
SPECIFICATIONS (SINGLE SUPPLY 5 V)
V+ = 4.5 V, VD = 1 V or 3.5 V, IS = 5 mA
V+ = 5.5 V, VS = 1 V or 4 V
V+ = 5 V
V
ns
F
T est Conditions
Unless Otherwise Specified
Parameter Symbol
Analog Switch
Analog Signal Range Drain-Source On-Resistance r r
Matching
DS(on)
Between Channels On-Resistance Flatness
Switch Off Leakage Current
Channel On Leakage Current
e
g
i
V
r
FLAT(on)
a
a
Digital Control
Logic High Input Voltage V Logic Low Input Voltage V Input Current
a
Dynamic Characteristics
Transition Time
Break-Before-Make Time
Enable Turn-On Time
Enable Turn-Off Time Charge Injection
Off Isolatione, Crosstalk Source Off Capacitance Drain Off Capacitance
Drain On Capacitance
e
e
e
e
e
h
e
e
e
e
t
t
t
OFF(EN)
ANALOG
DS(on)
r
DS
I
S(off)
I
D(off)
I
D(on)
INH INL
I
IN
TRANS
t
OPEN
ON(EN)
Q CL = 1 nF, R
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
V+ = 5 V, "10%, V- = 0 V
= 0.6 V or 2.4 V
V
EN
V+ = 4.5 V, VD or VS = 1 V or 3.5 V, ID =
V+ = 4.5 V, VD = 1 V or 3.5 V, IS = 5 mA
V+ = 5.5 V, VS = 1 V or 4 V
VD = 4 V or 1 V
V+ = 5.5 V, VD = VS = 1 V or 4 V
Sequence Each Switch On
VAX = VEN = 2.4 V or 0.6 V Full -1.5 1.5 -1 1 A
VS1 = 3.5 V, VS8 = 0 V, (DG408L)
V
= 3.5 V, V
S1b
V
VAX = 0 V, VS1 = 3.5 V (DG408L)
VAX = 0 V, V
See Figure 2
= VDA = 3.5 V, See Figure 4
S(all)
S1b
See Figure 3
GEN
RL = 1 k f = 100 kHz
f = 1 MHz, VS = 0 V, VEN = 0 V Room 8 f = 1 MHz, VD = 0 V, VEN = 0 V Room 21
f = 1 MHz, VD = 0 V, VEN = 2.4 V
(DG409L only)
f
5 mA
= 0 V, (DG409L)
S4b
= 3.5 V (DG409L)
= 0 , V
= 0 V Room 1 5 5 pC
GEN
DG408L/409L
Vishay Siliconix
A Suffix
-55 to 125_C
b
Temp
Full 0 5 0 5 V
Room
Full Room 1.5 3 3 Room 4 4
Room
Full Room
Full Room
Full
Full 2.4 2.4
Full 0.6 0.6
Room
Full Room
Full Room
Full Room
Full
Room -70 Room -80
Room 32
d
Typ
MincMaxcMincMaxcUnit
35 49
-15115-1-10110
-15115-1-10110
-15115-1-10110
44 125
62
-1
-1
-1
138
17 1 1
43 60
26 45
70
60
D Suffix
-40 to 85_C
125 135
40 62
60 65
45 50
nA
ns
dB
p
Document Number: 71342 S-03720—Rev. D, 07-Apr-03
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5
DG408L/409L
V
ns
F
Vishay Siliconix
SPECIFICATIONS (SINGLE SUPPLY 3 V)
T est Conditions
Unless Otherwise Specified
Parameter Symbol
V+ = 3 V, "10%, V- = 0 V
= 0.4 V or 2.0 V
V
EN
f
Temp
b
Typ
Analog Switch
Analog Signal Range Drain-Source On-Resistance r
Switch Off Leakage Current
Channel On Leakage Current
e
V
ANALOG
DS(on)
I
S(off)
a
I
D(off)
a
I
D(on)
V+ = 2.7 V, VD = 0.5 or 2.2 V, IS = 5 mA
V+ = 3.3 V, VS = 2 or 1 V, VD = 1 or 2 V
V+ = 3.3 V, VD = VS = 1 or 2 V
Sequence Each Switch On
Full 0 3 0 3 V
Room
Full
Room
Full
Room
Full
Room
Full
60 80
Digital Control
Logic High Input Voltage V Logic Low Input Voltage V Input Current
a
I
INH INL
IN
VAX = VEN = 2.4 V or 0.4 V Full -1.5 1.5 -1 1 A
Full 2 2 Full 0.4 0.4
Dynamic Characteristics
VS1 = 1.5 V, VS8 = 0 V, (DG408L)
Transition Time t
Break-Before-Make Time t
Enable Turn-On Time t
Enable Turn-Off Time t Charge Injection
Off Isolation Crosstalk Source Off Capacitance Drain Off Capacitance
Drain On Capacitance
Notes a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. V
IN
g. r
DS(on)
h. Worst case isolation occurs on Channel 4 do to proximity to the drain pin. i. r
DS(on)
e
e, h
e
e
e
e
= input voltage to perform proper function.
= r
Max - r
DS(on)
flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
DS(on)
TRANS
OPEN
ON(EN)
OFF(EN)
Q CL = 1 nF, R OIRR X
TALK
C
S(off)
C
D(off)
C
D(on)
Min.
V
= 1.5 V, V
S1b
V
= VDA = 1.5 V, See Figure 4
S(all)
VAX = 0 V, VS1 = 1.5 V (DG408L)
VAX = 0 V, V
= 0 V, (DG409L)
S4b
See Figure 2
= 1.5 V (DG409L)
S1b
See Figure 3
= 0 , V
GEN
= 0 V Room 0.4 5 5 pC
GEN
f = 100 kHz, RL = 1 k
f = 1 MHz, VS = 0 V, VEN = 0 V Room 8 f = 1 MHz, VD = 0 V, VEN = 0 V Room 19 f = 1 MHz, VD = 0 V, VEN = 2 V
(DG409L only)
Room
Full
Room
Full
Room
Full
Room
Full
75 150
32 1 1
70 95
55 100
Room -70 Room -79
Room 33
A Suffix
-55 to 125_C
d
MincMaxcMincMaxcUnit
105
-1
-15115
-1
-15115
-1
-15115
175
115
115
D Suffix
-40 to 85_C
100
-1
-10110
-1
-10110
-1
-10110
150 175
105 100
105
80
nA
ns
95
dB
p
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Document Number: 71342
S-03720—Rev. D, 07-Apr-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. VD and Power Supply
DS(on)
V+ = 2.7 V
V+ = 4.5 V
V+ = 12 V
- Drain-Source On-Resistnace ()
DS9on)
r
- Drain-Source On-Resistnace ()
DS9on)
r
80
70
60
50
40
30
20
10
0
024681012
DG408L/409L
Vishay Siliconix
r
vs. VD and Power Supply
25
20
15
10
5
0
-5 -3 -1 1 3 5
DS(on)
V+ = 5 V V- = -5 V
(V)
T
V
VD - Drain Voltage (V)
Input Threshold vs. V+ Supply Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
35
30
25
Upper Threshold Limit
Low Threshold Limit
0 2 4 6 8 10 12 14
V+ - Positive Supply Voltage (V)
r
vs. VD and Temperature
DS(on)
85_C
125_C
- Drain-Source On-Resistnace ()
DS9on)
r
VD - Drain Voltage (V)
r
vs. VD and Temperature
50
40
30
20
10
0
0123456
DS(on)
85_C
125_C
25_C
-55_C
VD - Drain Voltage (V)
Switching Time vs. Positive Supply V oltage
70
60
50
20
15
10
- Drain-Source On-Resistnace () 5
DS9on)
r
0
-6 -4 -2 0 2 4 6
Document Number: 71342 S-03720—Rev. D, 07-Apr-03
25_C
-55_C
VD - Drain Voltage (V)
40
30
Switching Speed (nS)
20
10
0
0 2 4 6 8 10 12 14
t
TRANS
t
ON
t
OFF
V+ - Positive Supply Voltage (V)
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DG408L/409L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
0
I
S(off)
-10
-20
Leakage Current (pA)Q - Charge Injection (pC)
-30
-40
-5 -3 -1 1 3 5
Charge Injection vs. Analog Voltage
1.0 CL = 1000 pF
0.8
0.6
0.4
V+ = 5 V V- = -5 V
0.2
Leakage Current vs. Analog Voltage
I
D(off)
I
D(on)
VD, VS - Analog V oltage (V)
V+ = 12 V V- = 0 V
V+ = 5 V V- = 0 V
40
35
30
25
20
15
Switching Speed (nS)
10
5
0
3456
Insertion Loss, Off Isolation and Crosstalk
10
-10 V+ = 3 V
V- = 0 V R
-30
-50
Loss (dB)
-70
-90
Switching Time vs.
Dual Power Supply Voltage
" - Dual Power Supply Voltage (V)
vs. Frequency (Single Supply)
= 50
L
Off Isolation
Crosstalk
Insertion Loss
-3 dB = 280 MHz
t
OFF
t
ON
t
TRANS
0.0
-5 0 5 10
Drain/Source Capacitance vs. Analog Voltage
35
30
V+ = 12 V
25
V- = 0 V
20
15
10
- Drain/Source Capacitance (pF)
S
, C
D
5
C
0
024681012
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8
VS - Source Voltage (V)
C
D(on)
C
D(off)
C
S(off)
-110
0.1
1
Drain/Source Capacitance vs. Analog Voltage
35
30
V+ = 5 V
25
V- = -5 V
20
15
10
- Drain/Source Capacitance (pF)
S
, C
D
C
5
0
-5 -4 -3 -2 -1 0 1 2 3 4 5
10
Frequency (MHz)
C
D(on)
C
D(off)
C
S(off)
Document Number: 71342
S-03720—Rev. D, 07-Apr-03
100 1000
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
GND
A
0
DG408L/409L
Vishay Siliconix
D
A
X
EN
V-
TEST CIRCUITS
A A
50
3 V
50
3 V
A
EN
A A
EN
2 1 0
1 0
DG408L
DG409L
V+
V+
V+
S2 - S
V-GND
V-
V+
S1a - S4a, D
V+
V-GND
V-
V+
Level
Shift
Decode/
Drive
V-
S
1
S
n
FIGURE 1.
S
7
S
D
S
1b
a
S
4b
D
b
1
8
300
300
V
S1
V
S8
V
O
35 pF
V
S1
V
SB4
V
O
Logic Input
V
Switch Output
35 pF
3 V
50%
0 V
AX
V
S1
V
50%
O
V
S8
t
TRANS
S
ON
1
90%
S
ON (DG408L)
8
or
S
ON (DG409L)
4
tr <20 ns t
<20 ns
f
90%
t
TRANS
Document Number: 71342 S-03720—Rev. D, 07-Apr-03
FIGURE 2. Transition Time
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9
DG408L/409L
Vishay Siliconix
TEST CIRCUITS
V+
50
50
V+
EN
A
0
DG408L
A
1
A
2
GND V-
V+
V+
EN
A
0
A
1
S1a - S4a, D
DG409L
GND V-
S2 - S
V-
S2b - S
V-
S
S
300
1b
a
4b
D
b
300
V
1
8
D
S1
3 V
0 V
t
ON(EN)
50%
35 pF
V
O
Logic Input
0 V
Switch Output
V
V
S1
V
O
O
V
O
90%
tr <20 ns t
<20 ns
f
10%
t
OFF(EN)
35 pF
FIGURE 3. Enable Switching Time
3 V
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10
50
EN
A A A
0 1 2
V+
All S and D
DG408L DG409L
GND V-
Db, D
V-
bbm.5
4/9
V
a
300
S1
V
O
35 pF
FIGURE 4. Break-Before-Make Interval
Logic Input
Switch Output
V
O
3 V
0 V
0 V
tr <20 ns t
<20 ns
f
50%
V
S
80%
t
OPEN
Document Number: 71342
S-03720—Rev. D, 07-Apr-03
TEST CIRCUITS
R
g
V
g
Channel
Select
V+
V+
S
X
EN
A
0
A
1
A
2
GND V-
V+
C
L
1 nF
V
D
V-
FIGURE 5. Charge Injection
DG408L/409L
Vishay Siliconix
3 V
Logic Input
O
Switch Output
OFF ON
OFF
0 V
VO is the measured voltage due to charge transfer error Q, when the channel turns off.
Q = C
x V
L
O
V+
V
O
V
S
V
S
Rg = 50
Rg = 50
V
V
IN
S
X
S
8
A
0
A
1
A
2
V+
EN
GND V-
D
V
O
Rg = 50
R
L
1 k
IN
S
1
S
V
S
X
S
8
A
0
A
1
A
2
GND V-
V-
V
Off Isolation = 20 log
OUT
V
IN
FIGURE 6. Off Isolation FIGURE 7. Crosstalk
V+V+
S
1
A
0
A
1
A
2
GND V-EN
V+
A
D
Channel
V
O
Select
A A
R
L
1 k
2
1
0
GND
V+
EN
V-
S
1
S
8
D
V+
D
EN
V-
Crosstalk = 20 log
R 1 k
V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
OUT
V
V
O
L
IN
Document Number: 71342 S-03720—Rev. D, 07-Apr-03
V-
Insertion Loss = 20 log
FIGURE 8. Insertion Loss
V
OUT
V
V-
IN
FIGURE 9. Source Drain Capacitance
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