8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
FEATURESBENEFITSAPPLICATIONS
D Low On-Resistance—r
DS(on)
: 100
D Low Charge Injection—Q: 20 pC
D Fast Transition Time—t
D Low Power—I
SUPPLY
: 10 A
TRANS
: 160 ns
D Single Supply Capability
D 44-V Supply Max Rating
D Reduced Switching Errors
D Reduced Glitching
D Improved Data Throughput
D Reduced Power Consumption
D Increased Ruggedness
D Wide Supply Ranges ("5 V to "20 V)
D TTL Compatible Logic
DESCRIPTION
The DG408 is an 8-channel single-ended analog multiplexer
designed to connect one of eight inputs to a common output
as determined by a 3-bit binary address (A0, A1, A2). The
DG409 is a dual 4-channel differential analog multiplexer
designed to connect one of four differential inputs to a common
dual output as determined by its 2-bit binary address (A0, A1).
Break-before-make switching action protects against
momentary crosstalk between adjacent channels.
An on channel conducts current equally well in both directions.
In the off state each channel blocks voltages up to the power
supply rails. An enable (EN) function allows the user to reset
the multiplexer/demultiplexer to all switches off for stacking
several devices. All control inputs, address (A
(EN) are TTL compatible over the full specified operating
temperature range.
) and enable
x
D Data Acquisition Systems
D Audio Signal Routing
D ATE Systems
D Battery Powered Systems
D High Rel Systems
D Single Supply Systems
D Medical Instrumentation
Applications for the DG408/409 include high speed data
acquisition, audio signal switching and routing, ATE systems,
and avionics. High performance and low power dissipation
make them ideal for battery operated and remote
instrumentation applications.
Designed in the 44-V silicon-gate CMOS process, the
absolute maximum voltage rating is extended to 44 V.
Additionally, single supply operation is also allowed. An
epitaxial layer prevents latchup.
For additional information please see Technical Article T A201
(FaxBack Number 70600).
diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6 mW/_C above 75_C.
d. Derate 7.6 mW/_C above 75_C.
e. Derate 12 mW/_C above 75_C.
f.Derate 10 mW/_C above 75_C.
e
f
, DX or INX exceeding V+ or V- will be clamped by internal
Switching Time of Multiplexer
Enable Turn On Time
Enable Turn Off Time
Charge Injection
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.V
IN
g. r
DS(on)
h. Worst case isolation occurs on Channel 4 do to proximity to the drain pin.
e
= input voltage to perform proper function.
= r
DS(on)
D Suffix
-40 to 85_C
ns
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4
Document Number: 70062
S-03081—Rev. F, 27-Jan-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
DG408/409
Vishay Siliconix
Source/Drain Capacitance vs. Analog Voltage
80
V+ = 15 V
V- = -15 V
(pF)C
S, D
(pA)
D
I
100
-20
-60
-100
60
40
20
0
-10-5510
V+ = 15 V
V- = -15 V
= -VD for I
V
60
S
VD = V
20
V
ANALOG
S(open)
DG409 I
DG408 I
C
D(on)
C
D(off)
C
S(off)
015-15
- Analog Voltage (V)
D(off)
for I
D(on)
D(off)
DG409 I
, I
D(on)
D(off)
D(on)
Drain Leakage Current vs. Source/Drain Voltage
(Single 12-V Supply)
D(off)
D(on)
DG409 I
D(on)
D(off)
DG408 I
VD - Drain Voltage (V)
DG408 I
D(on)
(pA)
D
I
-20
-40
-60
60
40
20
0
VS = 0 V for I
VS = VD for I
DG409 I
Source Leakage Current vs. Source VoltageDrain Leakage Current vs. Source/DrainVoltage
20
15
V+ = 15 V
V- = -15 V
V+ = 12 V
V- = 0 V
(pA)
S(off)
I
10
5
0
-5
D(off)
120106248
-140
-10-5510015-15
VD or VS — Drain or Source Voltage (V)VS - Source Voltage (V)
Input Switching Threshold vs. Supply Voltage
2.0
1.5
(V)
1.0
TH
V
0.5
0.0
Document Number: 70062
S-03081—Rev. F, 27-Jan-03
015-15
12204816
+V
SUPPLY
(V)
-100 mA
I-
-10
-10-5510
Negative Supply Current vs. Switching Frequency
V
= "15 V
-10 mA
-1 mA
-100 A
-10 A
-1 A
-0.1 A
SUPPLY
V
= 2.4 V
EN
10 k10 M1001 k100 k1 M
Switching Frequency (Hz)
VEN = 0 V or 5 V
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5
DG408/409
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Positive Supply Current vs. Switching FrequencyI
100 mA
10 mA
I+
100 A
I+ ( A)
1 mA
10 A
20
15
10
V
= "15 V
SUPPLY
V
= 2.4 V
EN
VEN = 0 V or 5 V
10 k10 M1001 k100 k1 M
Switching Frequency (Hz)
V+ = 15 V
V- = -15 V
= 0 V
V
IN
= 0 V
V
EN
5
0
-35 -152565105
Temperature (_C)
125-5585455
100 mA
I+, I-
Q (pC)
10 mA
1 mA
100 nA
10 nA
1 nA
100 pA
10 pA
90
80
70
60
50
40
30
20
10
-10
vs. Temperature
SUPPLY
I+
-(I-)
-35-152565105
Temperature (_C)
V
SUPPLY
= 0 V
V
A
V
EN
Charge Injection vs. Analog VoltagePositive Supply Current vs. Temperature (DG408)
CL = 10,000 pF
= 5 Vp-p
V
IN
V+ = 15 V
V- = -15 V
0
-10-5510
V
S
015-15
- Source Voltage (V)
= 0 V
= "15 V
V+ = 12 V
V- = 0 V
125-5585455
120
100
80
()
60
DS(on)
r
40
20
0
-20-12-8-404812 1620-16
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6
r
vs. VD and Supplyr
DS(on)
"5 V
"8 V
"10 V
"12 V
"20 V
VD - Drain Voltage (V)VD - Drain Voltage (V)
"15 V
160
140
120
100
()
DS(on)
r
80
60
40
20
0
vs. VD and Supply (Single Supply)
DS(on)
V+ = 7.5 V
10 V
V- = 0 V
48121620
12 V
15 V
Document Number: 70062
S-03081—Rev. F, 27-Jan-03
20 V
22 V
220
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. VS and Temperaturer
DS(on)
V+ = 15 V
V- = -15 V
125_C
85_C
25_C
0_C
-40_C
-10-5510
VS - Source Voltage (V)VS - Source Voltage (V)
-55_C
015-15
Off Isolation and Crosstalk vs. FrequencyInsertion Loss vs. Frequency
V+ = 15 V
V- = -15 V
R
= 1 k
L
Off-Isolation
Crosstalk
()
DS(on)
r
-150
-130
-110
-90
(dB)
-70
-50
80
70
60
50
40
30
20
10
0
130
110
90
()
70
DS(on)
r
50
30
10
1
0
-1
-2
-3
LOSS (dB)
-4
-5
DG408/409
Vishay Siliconix
vs. VS and Temperature (Single Supply)
DS(on)
125_C
85_C
25_C
0_C
-40_C
-55_C
V+ = 12 V
V- = 0 V
2610
RL = 1 k
V+ = 15 V
V- = -15 V
Ref. 1 Vrms
RL = 50
12840
-30
1001 k100 k1 M
200
175
150
t (ns)
125
100
75
"10"12"14"16"18"20"22
Document Number: 70062
S-03081—Rev. F, 27-Jan-03
-6
10 k10 M
f - Frequency (Hz)f - Frequency (Hz)
100 M
101001 k10 k 100 k1 M100 M
Switching Time vs. Single SupplySwitching Time vs. Bipolar Supply
275
t
t
ON(EN)
TRANS
t
OFF(EN)
V
(V)V
SUPPLY
t (ns)
250
225
200
175
150
125
100
91214131110
t
ON(EN)
SUPPLY
(V)
t
TRANS
10 M
t
OFF(EN)
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158
7
DG408/409
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
GND
A
0
A
X
EN
V-
TEST CIRCUITS
A
2
A
1
A
0
EN
50
V
REF
DG408
V+
V+
+15 V
S2 - S
V-GND
-15 V
D
V+
Level
Shift
Decode/
Drive
V-
S
1
S
n
FIGURE 1.
1
7
8
D
300
"10 V
#10 V
35 pF
tr <20 ns
<20 ns
t
V
O
Logic
Input
3 V
50%
f
0 V
V
Switch
Output
V
O
S1
0 V
90%
S
S
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8
50
A
A
EN
1
0
+15 V
V+
S1a - S4a, D
DG409
V-GND
-15 V
V
S8
t
1
a
b
300
"10 V
#10 V
35 pF
V
O
S
S
4b
D
TRANS
1
ON
90%
S
t
ONS
8
TRANS
FIGURE 2. Transition Time
Document Number: 70062
S-03081—Rev. F, 27-Jan-03
TEST CIRCUITS
DG408/409
Vishay Siliconix
+15 V
50
50
V+
EN
A
0
DG408
A
1
A
2
GNDV-
+15 V
V+
EN
A
0
A
1
S1a - S4a, D
DG409
GNDV-
S2 - S
-15 V
S2b - S
-15 V
S
D
S
1b
a
4b
D
b
1
8
1 k
1 k
- 5 V
- 5 V
35 pF
35 pF
V
O
Logic
Input
3 V
50%
tr <20 ns
<20 ns
t
f
0 V
t
ON(EN)
0 V
Switch
Output
V
O
V
O
V
O
90%
t
OFF(EN)
10%
+2.4 V
EN
A
A
A
50
Document Number: 70062
S-03081—Rev. F, 27-Jan-03
+15 V
V+
All S and D
0
DG408
1
DG409
2
GNDV-
Db, D
-15 V
FIGURE 3. Enable Switching Time
+5 V
a
V
O
300
35 pF
FIGURE 4. Break-Before-Make Interval
Logic
Input
Switch
Output
V
O
3 V
0 V
0 V
tr <20 ns
<20 ns
t
f
50%
V
S
80%
t
OPEN
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9
DG408/409
Vishay Siliconix
TEST CIRCUITS
R
g
Channel
Select
V
IN
S
V
S
Rg = 50
X
S
8
A
0
A
1
A
2
S
X
EN
V+
A
0
A
1
A
2
GNDV-
+15 V
V+
EN
GNDV-
+15 V
-15 V
C
L
10 nF
V
O
D
FIGURE 5. Charge Injection
D
R
L
1 k
V
O
Switch
Output
Rg = 50
Logic
Input
3 V
OFFON
0 V
VO is the measured voltage due to charge transfer
error Q, when the channel turns off.
Q = C
x V
L
O
+15 V
V
IN
S
1
S
V
S
X
S
8
A
0
A
1
A
2
V+
GNDV-
EN
D
OFF
V
R
L
1 k
O
V
O
V
S
Rg = 50
-15 V
Off Isolation = 20 log
V
OUT
V
IN
-15 V
Crosstalk = 20 log
FIGURE 6. Off IsolationFIGURE 7. Crosstalk
+15 V
S
1
A
0
A
1
A
2
V+
GNDV-
EN
D
-15 V
Insertion Loss = 20 log
FIGURE 8. Insertion Loss
R
L
1 k
Channel
V
O
Select
V
OUT
V
IN
+15 V
A
A
A
2
1
0
GND
V+
EN
S
1
S
8
D
V-
-15 V
FIGURE 9. Source Drain Capacitance
V
OUT
V
IN
Meter
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
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10
Document Number: 70062
S-03081—Rev. F, 27-Jan-03
APPLICATION HINTS
Overvoltage Protection
DG408/409
Vishay Siliconix
A very convenient form of overvoltage protection consists of
adding two small signal diodes (1N4148, 1N914 type) in series
with the supply pins (see Figure 10). This arrangement
effectively blocks the flow of reverse currents. It also floats the
supply pin above or below the normal V+ or V- value. In this
case the overvoltage signal actually becomes the power
V+
S
X
V
g
V-
FIGURE 10. Overvoltage Protection Using Blocking Diodes
8-Channel Sequential Multiplexer/Demultiplexer
+15 V-15 V
supply of the IC. From the point of view of the chip, nothing has
changed, as long as the difference V
- (V-) doesn’t exceed
S
+44 V. The addition of these diodes will reduce the analog
signal range to 1 V below V+ and 1 V above V-, but it
preserves the low channel resistance and low leakage
characteristics.