VISHAY DF10S VIS Datasheet

DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S

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www.vishay.com

Miniature Glass Passivated Single-Phase

Surface Mount Bridge Rectifiers

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Case Style DFS

PRIMARY CHARACTERISTICS

Package DFS

I

F(AV)

V

RRM

I

FSM

I

R

V

at IF = 1.0 A 1.1 V

F

T

max. 150 °C

J

Diode variations Quad

50 V, 100 V, 200 V, 400 V, 600 V,

1 A

800 V, 1000 V

50 A

5 μA

Vishay General Semiconductor

FEATURES

• UL recognition, file number E54214

• Ideal for automated placement

• High surge current capability

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.

MECHANICAL DATA

Case: DFS

Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked on body

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT

Device marking code DF005S DF01S DF02S DF04S DF06S DF08S DF10S

Maximum repetitive peak reverse voltage V

Maximum RMS voltage V

Maximum DC blocking voltage V

Maximum average forward output rectified current
at T

= 40 °C

A

Peak forward surge current single half sine-wave

superimposed on rated load

Rating for fusing (t < 8.3 ms) I

Operating junction and storage temperature range T

Note

(1)

Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads

(1)

50 100 200 400 600 800 1000 V

RRM

35 70 140 280 420 560 700 V

RMS

50 100 200 400 600 800 1000 V

DC

I

1.0 A

F(AV)

I

50 A

FSM

2

t10A

, T

- 55 to + 150 °C

J

STG

2

s

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT

Maximum instantaneous forward
voltage drop per diode

Maximum DC reverse current at
rated DC blocking voltage per diode

Typical junction capacitance per

(1)

diode

Note

(1)

Measured at 1.0 MHz and applied reverse voltage of 4.0 V

1.0 A V

T

= 25 °C

A

= 125 °C 500

T

A

1.1 V

F

I

R

C

J

5.0

25 pF

μA

Revision: 19-Aug-13

1

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

Document Number: 88573

DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S

www.vishay.com

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT

R

Typical thermal resistance

(1)

JA

R

JL

Note

(1)

Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

DF06S-E3/45 0.399 45 50 Tube

DF06S-E3/77 0.399 77 1500 13" diameter paper tape and reel



RATINGS AND CHARACTERISTICS CURVES (T

= 25 °C unless otherwise noted)

A

Vishay General Semiconductor

40

15

°C/W

1.0

60 Hz
Resistive or
Inductive Load

0.5

P.C.B. Mounted on

0.51 x 0.51" (13 x 13 mm)
Copper Pads

Average Forward Output Current (A)

0

40

60

20

80

100

120

Ambient Temperature (°C)

Fig. 1 - Derating Curve Output Rectified Current

60

50

40

30

20

10

Peak Fo rward Surge Current (A)

0

1.0 Cycle

1

Number of Cycles at 60 Hz

10

TJ = 150 °C
Single Sine-Wave

140

160

100

10

1

0.1

Instantaneous Forward Current (A)

0.01

0.4

0.6

0.8

TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle

1.0

1.2

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Forward Characteristics Per Diode

100

10

1

0.1

Instantaneous Reverse Current (µA)

0.01
0

Percent of Rated Peak Reverse Voltage (%)

20

TJ = 125 °C

TJ = 50 °C

40

60

80

1.4

100

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Current Per Diode

Revision: 19-Aug-13

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 88573

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S

www.vishay.com

Vishay General Semiconductor

100

10

Junction Capacitance (pF)

1

1

10

Reverse Voltage (V)

TJ = 25 °C
f = 1.0 MHz

= 50 mVp-p

V

sig

100

Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance



PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style DFS

0.205 (5.2)

0.195 (5.0)

0.047 (1.20)

0.040 (1.02)

100

10

Transient Thermal Impedance (°C/W)

0.1

1

0.01

0.1

t - Heating Time (s)

0.047 MIN.
(1.20 MIN.)

1

10

100

Mounting Pad Lay out

0.335 (8.51)

0.320 (8.13)

45°

0.130 (3.3)

0.120 (3.05)

0.013 (0.330)

0.009 (0.241)

0.404 (10.3)

0.386 (9.80)

0.255 (6.5)

0.245 (6.2)

0.060 (1.524)

0.040 (1.016)

0.060 MIN.
(1.52 MIN.)

0.013 (0.330)

0.003 (0.076)

0.404 MAX.

(10.26 MAX.)

0.205 (5.2)

0.195 (5.0)

Revision: 19-Aug-13

For technical questions within your region: [e-mail]

3

, [e-mail], [e-mail]

Document Number: 88573

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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

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Revision: 08-Feb-17

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Document Number: 91000