DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
Case Style DFM
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Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
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PRIMARY CHARACTERISTICS
Package DFM
I
F(AV)
V
RRM
I
FSM
I
R
V
at IF = 1.0 A 1.1 V
F
T
max. 150 °C
J
Diode variations Quad
50 V, 100 V, 200 V, 400 V, 600 V,
1 A
800 V, 1000 V
50 A
5 μA
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Device marking code DF005 DF01 DF02 DF04 DF06 DF08 DF10
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward output rectified current
at T
= 40 °C
A
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms) I
Operating junction and storage temperature range T
50 100 200 400 600 800 1000 V
RRM
35 70 140 280 420 560 700 V
RMS
50 100 200 400 600 800 1000 V
DC
1.0 A
I
F(AV)
I
50 A
FSM
2
t10A
, T
- 55 to + 150 °C
J
STG
2
s
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
Maximum instantaneous
forward voltage drop per diode
Maximum reverse current at
rated DC blocking voltage per
diode
Typical junction capacitance
per diode
1.0 A V
T
= 25 °C
A
T
= 125 °C 500
A
4.0 V, 1 MHz C
1.1 V
F
I
R
J
5.0
μA
25 pF
Revision: 16-Aug-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88571
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
20
40
60
80
100
120
140
150
0
0.5
1.0
60 Hz
Resistive or
Inductive Load
P. C. B. M ounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
Ambient Temperature (°C)
Average Forward Output Current (A)
1
10
100
0
10
20
30
40
50
60
1.0 Cycle
TJ = 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Average Forward Output Current (A)
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0
20
40
60
80
100
0.01
0.1
1
10
100
TJ = 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
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THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT
R
Typical thermal resistance
(1)
JA
R
JL
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
DF06M-E3/45 0.416 45 50 Tube
RATINGS AND CHARACTERISTICS CURVES (T
= 25 °C unless otherwise noted)
A
Vishay General Semiconductor
40
15
°C/W
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Revision: 16-Aug-13
For technical questions within your region: DiodesAmericas@vishay.com
Current Per Diode
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
2
Document Number: 88571
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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