Infrared Emitting Diode, 950 nm, GaAs
Description
TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear,
blue-grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and phototransistors.
TSUS540.
Vishay Semiconductors
94 8389
Features
• Low cost emitter
• Low forward voltage
• High radiant power and radiant intensity
• Suitable for DC and high pulse current
e2
Applications
• Infrared remote control and free air transmission
systems with low forward voltage and comfortable
radiation angle requirements in combination with
PIN photodiodes or phototransistors.
operation
• Standard T-1¾ (∅ 5 mm) package
• Comfortable angle of half intensity ϕ = ± 22°
• Peak wavelength λ
= 950 nm
p
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Peak forward current t
Surge forward current t
Power dissipation P
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 sec, 2 mm from case T
Thermal Resistance junction/
ambient
/T = 0.5, tp = 100 µs I
p
= 100 µs I
p
R
F
FM
FSM
amb
stg
sd
thJA
R
V
j
5V
150 mA
300 mA
2.5 A
210 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
375 K/W
Document Number 81056
Rev. 1.5, 22-Feb-07
www.vishay.com
1
TSUS540.
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Temp. coefficient of V
F
Reverse current V
Junction capacitance V
= 100 mA, tp = 20 ms V
F
IF = 100 mA TK
= 5 V I
R
= 0 V, f = 1 MHz, E = 0 C
R
F
VF
R
j
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Temp. coefficient of φ
e
Angle of half intensity ϕ ± 22 deg
Peak wavelength I
Spectral bandwidth I
Temp. coefficient of λ
p
Rise time I
Fall time I
Virtual source diameter ∅ 2.9 mm
IF = 20 mA TKφ
= 100 mA λ
F
= 100 mA Δλ 50 nm
F
IF = 100 mA TKλ
= 100 mA t
F
I
= 1.5 A t
F
= 100 mA t
F
I
= 1.5 A t
F
e
p
p
r
r
f
f
1.3 1.7 V
- 1.3 mV/K
100 µA
30 pF
- 0.8 %/K
950 nm
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
Type Dedicated Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Forward voltage I
Radiant intensity I
Radiant power I
= 1.5 A, tp = 100 µs TSUS5400 V
F
= 100 mA, tp = 20 ms TSUS5400 I
F
I
= 1.5 A, tp = 100 µs TSUS5400 I
F
= 100 mA, tp = 20 ms TSUS5400 φ
F
TSUS5401 V
TSUS5402 V
TSUS5401 I
TSUS5402 I
TSUS5401 I
TSUS5402 I
TSUS5401 φ
TSUS5402 φ
F
F
F
e
e
e
e
e
e
e
e
e
71435mW/sr
10 17 35 mW/sr
15 20 35 mW/sr
60 140 mW/sr
85 160 mW/sr
120 190 mW/sr
2.2 3.4 V
2.2 3.4 V
2.2 2.7 V
13 mW
14 mW
15 mW
www.vishay.com
2
Document Number 81056
Rev. 1.5, 22-Feb-07
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
250
TSUS540.
Vishay Semiconductors
4
10
200
150
R
thJA
100
V
50
P - Power Dissipation (mW)
0
20 40 60 80 100 0
T
94 7957
- Ambient Temperature (°C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
250
200
150
100
R
thJA
F
I - Forward Current (mA)
50
0
020406080
T
94 7988
- Ambient Temperature (°C)
amb
100
Figure 2. Forward Current vs. Ambient Temperature
3
10
2
10
1
10
0
10
F
I- Forward Current (mA)
-1
94 7996
10
- Forward Voltage (V)
V
F
43210
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
I
= 10 mA
F
1.0
0.9
8
0.
Frel
V - Relative Forward Voltage (V)
94 7990
0.7
T
- Ambient Temperature (°C)
amb
100806040200
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1
10
I
= 2.5 A ( Single Pulse )
FSM
tp/T = 0.01
0
10
0.05
0.1
F
I- Forward Current (A)
0.5
1.0
-1
94 7989
10
-2
10
-1
10
0
10
tp- Pulse Duration (ms)
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81056
Rev. 1.5, 22-Feb-07
1000
TSUS 5401
TSUS 5402
TSUS5400
e
I - Radiant Intensity (mW/sr)
100
10
1
1
10
2
10
94 7997
0
10
1
10
I
- Forward Current (mA)
F
2
10
3
10
4
10
Figure 6. Radiant Intensity vs. Forward Current
www.vishay.com
3
Loading...