VISHAY CQY80N, CQY80NG Technical data

CQY80N/ CQY80NG

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

C

Features

• Isolation materials according to UL94-VO

• Pollution degree 2 (DIN/VDE 0110 / resp. IEC

60664)

• Special construction: Therefore, extra low cou­pling capacity of typical 0.3 pF, high Common
Mode Rejection

• Climatic classification 55/100/21
(IEC 60068 part 1)

• Low temperature coefficient of CTR

• Rated impulse voltage (transient overvoltage)
V

= 6 kV peak

IOTM

• Isolation test voltage (partial discharge test volt­age) V

= 1.6 kV

pd

• Rated isolation voltage (RMS includes DC)
V

IOWM

= 600 V

(848 V peak)

RMS

• Rated recurring peak voltage (repetitive)
V

= 600 V

IORM

RMS

• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index:
CTI = 275

• Thickness through insulation ≥ 0.75 mm

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E76222 System Code A, Double
Protection

• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN
60950 (BS 7002), Certificate number 7081 and
7402

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

• FIMKO (SETI): EN 60950, Certificate No. 12399

Applications

Circuits for safe protective separation against electri­cal shock according to safety class II (reinforced iso­lation):

• For appl. class I - IV at mains voltage ≤ 300 V

• For appl. class I - III at mains voltage ≤ 600 V accord-

ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2, suitable for:

B

17186

e3

Switch-mode power supplies, line receiver, com­puter peripheral interface, microprocessor sys­tem interface.

Description

The CQY80N(G) series consist of a phototransistor
optically coupled to a gallium arsenide infrared-emit­ting diode in a 6-pin plastic dual inline package.

The elements are mounted on one leadframe provid­ing a fixed distance between input and output for high­est safety requirements.

VDE Standards

These couplers perform safety functions according to the following

equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending

Optocoupler for electrical safety requirements

IEC 60950/EN 60950

Office machines (applied for reinforced isolation for mains voltage

≤

400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related household appa-

ratus

E

546

231

ncC (-)A (+)

V

DE

Pb

Pb-free

Document Number 83533

Rev. 1.7, 26-Oct-04

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CQY80N/ CQY80NG

Vishay Semiconductors

Order Information

Par t Remarks

CQY80N CTR > 50 %, DIP-6

CQY80NG CTR > 50 %, DIP-6

G = Leadform 10.16 mm; G is marked on the body

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Power dissipation P

Junction temperature T

Forward surge current t

≤ 10 µsI

p

R

F

diss

j

FSM

5V

60 mA

100 mW

125 °C

1.5 A

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (RMS) t = 1 min V

Total power dissipation P

Ambient temperature range T

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

CEO

ECO

C

CM

diss

ISO

tot

amb

stg

sld

32 V

7V

50 mA

100 mA

150 mW

j

125 °C

3750 V

250 mW

- 55 to + 100 °C

- 55 to + 125 °C

260 °C

RMS

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Document Number 83533

Rev. 1.7, 26-Oct-04

CQY80N/ CQY80NG

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= 50 mA V

F

= 0, f = 1 MHz C

R

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector-emitter leakage
current

= 1 mA V

C

= 100 µAV

E

V

= 20 V, If = 0, E = 0 I

CE

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz C

= 10 mA, IC = 1 mA V

I

F

= 5 V, IF = 10 mA,

CE

= 100 Ω

R

L

F

j

CEO

ECO

CEO

CEsat

f

c

k

32 V

7V

1.25 1.6 V

50 pF

10 200 nA

0.3 V

110 kHz

0.3 pF

Current Transfer Ratio

Parameter Test condition Symbol Min Ty p. Max Unit

I

C/IF

VCE = 5 V, IF = 10 mA CTR 50 90 %

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward current I

F

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Power dissipation P

diss

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Rated impulse voltage V

Safety temperature T

IOTM

si

130 mA

265 mW

6kV

150 °C

Document Number 83533

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CQY80N/ CQY80NG

Vishay Semiconductors

Insulation Rated Parameters

Parameter Test condition Symbol Min Ty p. Max Unit

Partial discharge test voltage ­Routine test

Partial discharge test voltage ­Lot test (sample test)

Insulation resistance V

275

250

225

200

175

150

125

100

75

Isi(mA)

50

25

tot

P - Total Power Dissipation ( mW )

0

0 25 50 75 100 125 150 175

95 10923

T

amb

Psi(mW)

- Ambient Temperature ( °C)

100 %, t

= 60 s, t

t

Tr

(see figure 2)

IO

V

IO

V

IO

(construction test only)

= 1 s V

test

= 10 s,

test

= 500 V R

= 500 V, T

= 500 V, T

amb

amb

V

= 100 °C R

= 150 °C

IOTM

V

R

V

V

V

13930

pd

pd

IO

IO

IO

IOTM

V

IOWM

IORM

1.6 kV

6kV

1.3 kV

12

10

11

10

9

10

t1, t2 = 1 to 10 s
t

, t4 = 1 s

3

= 10 s

t

test

t

= 12 s

stres

Pd

0

t

1

tTr = 60 s

t

2

t

t3t

test

t

stres

t

Ω

Ω

Ω

4

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to DIN EN

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

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Document Number 83533

Rev. 1.7, 26-Oct-04