VISHAY CQY80N, CQY80NG Technical data

CQY80N/ CQY80NG

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

C

Features

• Isolation materials according to UL94-VO

• Pollution degree 2 (DIN/VDE 0110 / resp. IEC

60664)

• Special construction: Therefore, extra low cou­pling capacity of typical 0.3 pF, high Common
Mode Rejection

• Climatic classification 55/100/21
(IEC 60068 part 1)

• Low temperature coefficient of CTR

• Rated impulse voltage (transient overvoltage)
V

= 6 kV peak

IOTM

• Isolation test voltage (partial discharge test volt­age) V

= 1.6 kV

pd

• Rated isolation voltage (RMS includes DC)
V

IOWM

= 600 V

(848 V peak)

RMS

• Rated recurring peak voltage (repetitive)
V

= 600 V

IORM

RMS

• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index:
CTI = 275

• Thickness through insulation ≥ 0.75 mm

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E76222 System Code A, Double
Protection

• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN
60950 (BS 7002), Certificate number 7081 and
7402

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

• FIMKO (SETI): EN 60950, Certificate No. 12399

Applications

Circuits for safe protective separation against electri­cal shock according to safety class II (reinforced iso­lation):

• For appl. class I - IV at mains voltage ≤ 300 V

• For appl. class I - III at mains voltage ≤ 600 V accord-

ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2, suitable for:

B

17186

e3

Switch-mode power supplies, line receiver, com­puter peripheral interface, microprocessor sys­tem interface.

Description

The CQY80N(G) series consist of a phototransistor
optically coupled to a gallium arsenide infrared-emit­ting diode in a 6-pin plastic dual inline package.

The elements are mounted on one leadframe provid­ing a fixed distance between input and output for high­est safety requirements.

VDE Standards

These couplers perform safety functions according to the following

equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending

Optocoupler for electrical safety requirements

IEC 60950/EN 60950

Office machines (applied for reinforced isolation for mains voltage

≤

400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related household appa-

ratus

E

546

231

ncC (-)A (+)

V

DE

Pb

Pb-free

Document Number 83533

Rev. 1.7, 26-Oct-04

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1

CQY80N/ CQY80NG

Vishay Semiconductors

Order Information

Par t Remarks

CQY80N CTR > 50 %, DIP-6

CQY80NG CTR > 50 %, DIP-6

G = Leadform 10.16 mm; G is marked on the body

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Power dissipation P

Junction temperature T

Forward surge current t

≤ 10 µsI

p

R

F

diss

j

FSM

5V

60 mA

100 mW

125 °C

1.5 A

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (RMS) t = 1 min V

Total power dissipation P

Ambient temperature range T

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

CEO

ECO

C

CM

diss

ISO

tot

amb

stg

sld

32 V

7V

50 mA

100 mA

150 mW

j

125 °C

3750 V

250 mW

- 55 to + 100 °C

- 55 to + 125 °C

260 °C

RMS

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Document Number 83533

Rev. 1.7, 26-Oct-04

CQY80N/ CQY80NG

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= 50 mA V

F

= 0, f = 1 MHz C

R

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector-emitter leakage
current

= 1 mA V

C

= 100 µAV

E

V

= 20 V, If = 0, E = 0 I

CE

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz C

= 10 mA, IC = 1 mA V

I

F

= 5 V, IF = 10 mA,

CE

= 100 Ω

R

L

F

j

CEO

ECO

CEO

CEsat

f

c

k

32 V

7V

1.25 1.6 V

50 pF

10 200 nA

0.3 V

110 kHz

0.3 pF

Current Transfer Ratio

Parameter Test condition Symbol Min Ty p. Max Unit

I

C/IF

VCE = 5 V, IF = 10 mA CTR 50 90 %

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward current I

F

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Power dissipation P

diss

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Rated impulse voltage V

Safety temperature T

IOTM

si

130 mA

265 mW

6kV

150 °C

Document Number 83533

Rev. 1.7, 26-Oct-04

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CQY80N/ CQY80NG

Vishay Semiconductors

Insulation Rated Parameters

Parameter Test condition Symbol Min Ty p. Max Unit

Partial discharge test voltage ­Routine test

Partial discharge test voltage ­Lot test (sample test)

Insulation resistance V

275

250

225

200

175

150

125

100

75

Isi(mA)

50

25

tot

P - Total Power Dissipation ( mW )

0

0 25 50 75 100 125 150 175

95 10923

T

amb

Psi(mW)

- Ambient Temperature ( °C)

100 %, t

= 60 s, t

t

Tr

(see figure 2)

IO

V

IO

V

IO

(construction test only)

= 1 s V

test

= 10 s,

test

= 500 V R

= 500 V, T

= 500 V, T

amb

amb

V

= 100 °C R

= 150 °C

IOTM

V

R

V

V

V

13930

pd

pd

IO

IO

IO

IOTM

V

IOWM

IORM

1.6 kV

6kV

1.3 kV

12

10

11

10

9

10

t1, t2 = 1 to 10 s
t

, t4 = 1 s

3

= 10 s

t

test

t

= 12 s

stres

Pd

0

t

1

tTr = 60 s

t

2

t

t3t

test

t

stres

t

Ω

Ω

Ω

4

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to DIN EN

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

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Document Number 83533

Rev. 1.7, 26-Oct-04

Switching Characteristics

Parameter Test condition Symbol Min Ty p. Max Unit

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

Turn-on time V

Turn-off time V

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 5 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 4)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 4)

CQY80N/ CQY80NG

Vishay Semiconductors

t

d

t

r

t

f

t

s

t

on

t

off

t

on

t

off

4.0 µs

7.0 µs

6.7 µs

0.3 µs

11.0 µs

7.0 µs

25.0 µs

42.5 µs

0

R

t

p

T

t

14943

+5V

IC=5mA;

Channel I

Channel II

Ω

10050

=50

G

= 0.01

=50µs

p

I

I

F

F

Ω

Ω

Figure 3. Test circuit, non-saturated operation

I

0

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

I

F

F

50 W 1 kW

+ 5 V

I

C

Channel I

Channel II

Adjusted through
input amplitude

Oscilloscope

R

≥ 1M

Ω

L

C

≥

20 pF

L

Oscilloscope
R
C

t 1 MW

L

d 20 pF

L

I

F

0

I

C

100%

90%

10%

0

t

d

t

t

p

t

d

t

r

t

(= td+tr) turn-on time

on

on

pulse duration
delay time
rise time

t

p

t

r

t

s

t

off

t

s

t

f

t

(= ts+tf) turn-off time

off

Figure 5. Switching Times

96 11698

t

t

f

t

storage time
fall time

14944

Figure 4. Test circuit, saturated operation

Document Number 83533

Rev. 1.7, 26-Oct-04

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CQY80N/ CQY80NG

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Typical Characteristics (Tamb = 25 °C unless otherwise specified)

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P –Total Power Dissipation ( mW )

0

0 40 80 120

T

96 11700

– Ambient Temperature(°C )

amb

Figure 6. Total Power Dissipation vs. Ambient Temperature

1000

100

10

1

F

I - Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

96 11862

VF- Forward Voltage(V)

10000

VCE=20V

I

=0

1000

F

100

with open Base ( nA )

10

CEO

I - Collector Dark Current,

1

100

95 11026

0255075

T

- Ambient Temperature ( ° C)

amb

Figure 9. Collector Dark Current vs. Ambient Temperature

1

VS=5V

0.1

0.01

CB

I - Collector Base Current ( mA )

0.001

95 11052

110

IF- Forward Current ( mA )

100

Figure 7. Forward Current vs. Forward Voltage

1.5

VCE=5V

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

rel

0.5

CTR - Relative Current Transfer Ratio

- 30 - 20 - 1 0 0 10 20 30 40 50 60 70 80

96 11920

=10 mA

I

F

T

- Ambient Temperature (° C)

amb

Figure 8. Relative Current Transfer Ratio vs. Ambient

Temperature

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Figure 10. Collector Base Current vs. Forward Current

100

VCE=5V

10

1

0.1

C

I - Collector Current ( mA )

0.01

0.1 1 10

95 11053

IF- Forward Current ( mA )

100

Figure 11. Collector Current vs. Forward Current

Document Number 83533

Rev. 1.7, 26-Oct-04

CQY80N/ CQY80NG

Vishay Semiconductors

100

IF= 50mA

20 mA

10 mA

10

5mA

2mA

1

C

I - Collector Current ( mA )

1mA

0.1

0.1 1 10

95 11054

V

CE

- Collector Emitter Voltage(V)

100

Figure 12. Collector Current vs. Collector Emitter Voltage

1.0

0.8

0.6

0.4
CTR = 50%

0.2

20%

CEsat

V - Collector Emitter Saturation Voltage (V)

95 11055

0

110

IC- Collector Current ( mA )

10%

100

Figure 13. Collector Emitter Saturation Voltage vs. Collector

Current

1000

VCE=5V

100

10

CTR - Current Transfer Ratio ( % )

1

0.1 1 10

95 11057

IF- Forward Current ( mA )

100

Figure 15. Current Transfer Ratio vs. Forward Current

50

t

40

off

30

t

20

on

Saturated Operation
V

=5V

offon

t / t - Turn on / Turn off Time ( µ s)

95 11017

10

S

=1kΩ

R

L

0

0 5 10 15

I

- Forward Current ( mA )

F

20

Figure 16. Turn on / off Time vs. Forward Current

1000

VCE=5V

800

600

400

FE

h - DC Current Gain

200

0

0.01 0.1 1 10

95 11056

IC- Collector Current ( mA )

Figure 14. DC Current Gain vs. Collector Current

Document Number 83533

Rev. 1.7, 26-Oct-04

100

20

Non Saturated
Operation
V

=5V

S

R

= 100

Ω

L

15

10

t

on

t

off

5

offon

t / t - Turn on / Turn off Time ( µ s)

95 11016

0

02 46

I

- Collector Current ( mA )

C

8

Figure 17. Turn on / off Time vs. Collector Current

10

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CQY80N/ CQY80NG

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Customer Code/
Identification/
Option

Product Code

Figure 18. Marking example

V

D E

UL Logo

V XXXY 68

Vishay Logo

17936

Package Dimensions in mm

Date Code (year, week)

VDE Logo

Plant Code

Package Code

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14770

Document Number 83533

Rev. 1.7, 26-Oct-04

Package Dimensions in mm

CQY80N/ CQY80NG

Vishay Semiconductors

14771

Document Number 83533

Rev. 1.7, 26-Oct-04

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 83533

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Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.