Vishay CPV364M4U Data Sheet
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IMS-2
IGBT SIP Module
(Ultrafast IGBT)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
per phase (3.5 kW total)
I
RMS
with T
= 90 °C
C
T
J
Supply voltage 360 V
Power factor 0.8
Modulation depth (see fig. 1) 115 %
V
(typical)
CE(on)
at I
= 10 A, 25 °C
C
Package SIP
Circuit Three Phase Inverter
12 A
125 °C
1.56 V
RMS
DC
CPV364M4UPbF
Vishay Semiconductors
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
•HEXFRED® soft ultrafast diodes
• Optimized for high speed over 5 kHz
See fig. 1 for current vs. frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current, each IGBT I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Diode maximum forward current I
Gate to emitter voltage V
Isolation voltage V
Maximum power dissipation, each IGBT P
Operating junction and storage
temperature range
Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw
Notes
(1)
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
VCC = 80 % (V
Revision: 11-Jun-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19)
CES
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CES
TC = 25 °C 20
C
(1)
CM
(2)
LM
F
FM
GE
ISOL
D
T
, T
J
Stg
= 100 °C 10
T
C
TC = 100 °C 9.3
t = 1 min, any terminal to case 2500 V
TC = 25 °C 63
T
= 100 °C 25
C
1
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600 V
60
60
60
± 20 V
- 40 to + 150
5 to 7
(0.55 to 0.8)
Document Number: 94489
lbf in
(N m)
A
RMS
W
°C
CPV364M4UPbF
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction R
Case to sink, flat, greased surface R
(IGBT) - 2.0
thJC
(DIODE) - 3.0
thJC
(MODULE) 0.10 -
thCS
Weight of module
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
(1)
Collector to emitter breakdown voltage V
Temperature coefficient of
breakdown voltage
V
Collector to emitter saturation voltage V
(BR)CES
(BR)CES
CE(on)
VGE = 0 V, IC = 250 μA 600 - - V
TJVGE = 0 V, IC = 1.0 mA - 0.63 - V/°C
IC = 10 A
I
= 20 A - 1.84 -
C
I
= 10 A, TJ = 150 °C -
C
V
GE
See fig. 2, 5
Vishay Semiconductors
°C/WJunction to case, each DIODE, one DIODE in conduction R
20 - g
0.7 - oz.
- 1.56 2.1
= 15 V
1.56
-
V
Gate threshold voltage V
Temperature coefficient of
threshold voltage
Forward transconductance g
Zero gate voltage collector current I
Diode forward voltage drop V
Gate to emitter leakage current I
Notes
(1)
Pulse width 80 μs, duty factor 0.1 %
(2)
Pulse width 5.0 μs; single shot
GE(th)
V
/TJVCE = VGE, IC = 250 μA - - 13 - mV/°C
GE(th)
(2)
fe
VCE = VGE, IC = 250 μA 3.0 - 6.0
VCE = 100 V, IC = 10 A 11 18 - S
VGE = 0 V, VCE = 600 V - - 250
CES
FM
GES
V
= 0 V, VCE = 600 V, TJ = 150 °C - - 3500
GE
IC = 15 A
I
= 15 A, TJ = 150 °C - 1.2 1.6
C
See fig. 13
-1.31.7
VGE = ± 20 V - - ± 100 nA
μA
V
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
2
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Document Number: 94489
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CPV364M4UPbF
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total switching loss E
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse recovery charge I
Diode reverse recovery charge Q
Diode peak rate of fall of
recovery during t
b
dI
ge
gc
d(on)
r
d(off)
f
on
off
ts
d(on)
r
d(off)
f
ts
ies
oes
res
rr
rr
rr
(rec)M
IC = 10 A
g
V
CC
V
GE
= 400 V
= 15 V
See fig. 8
TJ = 25 °C
I
= 10 A, VCC = 480 V
C
V
= 15 V, RG = 10
GE
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
TJ = 150 °C
I
= 10 A, VCC = 480 V
C
V
= 15 V, RG = 10
GE
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
VGE = 0 V
= 30 V
V
CC
ƒ = 1.0 MHz
See fig. 7
/dt
TJ = 25 °C
T
= 125 °C - 74 120
J
TJ = 25 °C
T
= 125 °C - 6.5 10
J
TJ = 25 °C
T
= 125 °C - 220 600
J
= 25 °C
T
J
T
= 125 °C - 160 -
J
See fig. 14
See fig. 15
See fig. 16
See fig. 17
I
= 15 A
F
= 200 V
V
R
dI/dt = 200 A/μs
Vishay Semiconductors
- 100 160
-1624
-4055
-41-
-13-
- 96 140
- 110 160
-0.26-
-0.18-
- 0.44 0.7
-39-
-15-
- 220 -
- 160 -
-0.74- mJ
- 2100 -
- 110 -
-34-
-4260
-4.06.0
- 80 180
- 188 -
nCGate to emitter charge (turn-on) Q
ns
mJTurn-off switching loss E
ns
pFOutput capacitance C
ns
A
nC
A/μs
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
3
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Document Number: 94489
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
0.1 1 10 100
0
2
4
6
8
10
12
14
16
18
20
f, Frequency (KHz)
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rat ed Voltage
0.00
0.59
1.17
1.76
Total Output Power (kW)
3.51
5.85
2.34
2.93
4.10
4.68
5.27
1
10
100
0111.0
CE
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
J
J
V = 15V
20µs PULSE WIDTH
GE
1
10
100
56789
C
I , Collector-to-Emitter Current (A)
GE
T = 25°C
T = 150°C
J
J
V , Gate-to-Emitter Voltage (V)
V = 10V
5µs PULSE WIDTH
CC
25 50 75 100 125 150
0
4
8
12
16
20
T , Case Temperat ure ( C)
Maximum DC Collector Current(A)
C
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
1.2
1.4
1.6
1.8
2.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
V = 15V
80 us PULSE W IDTH
GE
I = A5
C
I = A10
C
I = A20
C
5.0
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of Fundamental)
RMS
CPV364M4UPbF
Vishay Semiconductors
Fig. 2 - Typical Output Characteristics
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 3 - Typical Transfer Characteristics
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
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Junction Temperature
Document Number: 94489
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