Vishay CPV364M4KPBF Data Sheet

IGBT SIP Module

(Short Circuit Rated Ultrafast IGBT)

IMS-2

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

I

per phase (3.1 kW total)

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

at I

= 13 A, 25 °C

C

11 A

125 °C

1.8 V

RMS

CPV364M4KPbF

Vishay High Power Products

FEATURES

• Short circuit rated ultrafast: Optimized for high
speed > 5.0 kHz, and short circuit rated to 10 µs
at 125 °C, V

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

• Totally lead (Pb)-free and RoHS compliant

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay´s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

= 15 V

GE

®

soft ultrafast diodes

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Short circuit withstand time t

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage temperature range T

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

), VGE = 20 V, L = 10 µH, RG = 10 Ω (see fig. 19)

CES

CM

LM

J

CES

SC

ISOL

, T

C

GE

TC = 25 °C 24

= 100 °C 13

T

C

(1)

(2)

TC = 100 °C 9.3 µs

t = 1 min, any terminal to case 2500 V

TC = 25 °C 63

D

T

= 100 °C 25

C

Stg

600 V

48

48

± 20 V

- 55 to + 150

5 to 7

(0.55 to 0.8)

lbf ⋅ in

(N ⋅ m)

A

RMS

W

°C

Document Number: 94488 For technical questions, contact: [e-mail]
Revision: 01-Sep-08 1

www.vishay.com

CPV364M4KPbF

Vishay High Power Products

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage ΔV

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs; single shot

(1)

(BR)CES

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.63 - V/°C

(BR)CES

CE(on)

GE(th)

/ΔT

GE(th)

J

(2)

fe

CES

FM

GES

(IGBT) - 2.2

thJC

(DIODE) - 3.7

thJC

(MODULE) 0.10 -

thCS

°C/WJunction to case, each DIODE, one DIODE in conduction R

20 - g

0.7 - oz.

VGE = 0 V, IC = 250 µA 600 - - V

IC = 13 A

V

= 15 V

= 24 A - 1.80 -

I

C

= 13 A, TJ = 150 °C - 1.56 1.73

I

C

GE

See fig. 2, 5

VCE = VGE, IC = 250 µA

- 1.80 2.3

3.0 - 6.0

-- 13-mV/°C

VCE = 100 V, IC = 10 A 11 18 - S

VGE = 0 V, VCE = 600 V - - 250

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 3500

GE

IC = 15 A

I

= 15 A, TJ = 150 °C - 1.2 1.6

C

See fig. 13

-1.31.7

VGE = ± 20 V - - ± 100 nA

V

µA

V

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94488

2 Revision: 01-Sep-08

CPV364M4KPbF

IGBT SIP Module

Vishay High Power Products

(Short Circuit Rated

Ultrafast IGBT)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Short circuit withstand time t

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery charge I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery
during t

b

dI

(rec)M

g

ge

gc

d(on)

r

d(off)

f

on

off

ts

sc

d(on)

r

d(off)

f

ts

E

ies

oes

res

rr

rr

rr

/dt

IC = 13 A

= 400 V

V

CC

V

= 15 V

GE

See fig. 8

- 110 170

-1421

-4974

nCGate to emitter charge (turn-on) Q

-50-

TJ = 25 °C
I

= 13 A, VCC = 480 V

C

= 15 V, RG = 10 Ω

V

GE

Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18

-30-

- 110 170

- 91 140

-0.56-

-0.28-

ns

mJTurn-off switching loss E

- 0.84 1.1

VCC = 360 V,TJ = 125 °C
V

= 15 V, RG = 10 Ω, V

GE

CPK

< 500 V

10 - - µs

-47-

TJ = 150 °C, see fig. 9, 10, 11, 18
I

= 13 A, VCC = 480 V

C

V

= 15 V, RG = 10 Ω

GE

Energy losses include “tail” and
diode reverse recovery

-30-

- 250 -

- 150 -

ns

-1.28-mJ

Measured 5 mm from package - 7.5 - nH

VGE = 0 V
V

= 30 V

CC

ƒ = 1.0 MHz
See fig. 7

TJ = 25 °C

T

= 125 °C - 74 120

J

TJ = 25 °C

T

= 125 °C - 6.5 10

J

TJ = 25 °C

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 160 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 15 A

F

= 200 V

V

R

dI/dt = 200 A/µs

- 1600 -

- 130 -

-55-

-4260

-4.06.0

- 80 180

- 188 ­A/µs

pFOutput capacitance C

ns

nC

A

Document Number: 94488 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Sep-08 3

CPV364M4KPbF

Vishay High Power Products

18

16

14

12

10

8

6

LOAD CURRENT (A)

4

2

0

0.1 1 10 100

100

°

T = 150 C

J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

Fig. 2 - Typical Output Characteristics

T = 25 C

J

°

V = 15V

GE

20µs PULSE WIDTH

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

160

140

120

100

80

60

40

Maximum DC Collector Current (A)

20

0

5.27

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rat ed Voltage

4.68

4.10

3.51

2.93

2.34

1.76

1.17

Total Output Power (kW)

0.59

0.00

DC

Square wave (D=0.50)
80% rated Vr applied

see note (2)

0 5 10 15 20 25 30

TC, Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs.

Case Temperature

100

°

T = 150 C

J

10

°

T = 25 C

J

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10

V , Gate-to-Emitter Voltage (V)

GE

V = 50 V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Output Characteristics

4.0

V = 15 V

GE

80 us PULSE WIDTH

3.0

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A26

C

I = A13

C

I = A6.5

C

°

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94488

4 Revision: 01-Sep-08