Vishay CPV364M4K Data Sheet
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IMS-2
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
per phase (3.1 kW total)
I
RMS
with T
= 90 °C
C
T
J
Supply voltage 360 V
Power factor 0.8
Modulation depth (see fig. 1) 115 %
(typical)
V
CE(on)
at I
= 13 A, 25 °C
C
Package SIP
Circuit Three Phase Inverter
11 A
125 °C
1.8 V
RMS
DC
CPV364M4KPbF
Vishay Semiconductors
FEATURES
• Short circuit rated ultrafast: Optimized for high
speed > 5.0 kHz, and short circuit rated to 10 μs
at 125 °C, V
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
•HEXFRED
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay´s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
= 15 V
GE
®
soft ultrafast diodes
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Short circuit withstand time t
Gate to emitter voltage V
Isolation voltage V
Maximum power dissipation, each IGBT P
Operating junction and storage temperature range T
Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw
Notes
(1)
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
VCC = 80 % (V
Revision: 11-Jun-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19)
CES
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CM
LM
J
CES
C
SC
GE
ISOL
, T
TC = 25 °C 24
= 100 °C 13
T
C
(1)
(2)
TC = 100 °C 9.3 μs
t = 1 min, any terminal to case 2500 V
TC = 25 °C 63
D
T
= 100 °C 25
C
Stg
1
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600 V
48
48
± 20 V
- 55 to + 150
5 to 7
(0.55 to 0.8)
Document Number: 94488
lbf in
(N m)
A
RMS
W
°C
CPV364M4KPbF
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction R
Case to sink, flat, greased surface R
Weight of module
(IGBT) - 2.2
thJC
(DIODE) - 3.7
thJC
(MODULE) 0.10 -
thCS
20 - g
0.7 - oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
(1)
Collector to emitter breakdown voltage V
Temperature coeff. of breakdown
voltage
Collector to emitter saturation voltage V
Gate threshold voltage V
Temperature coeff. of threshold voltage V
Forward transconductance g
Zero gate voltage collector current I
Diode forward voltage drop V
Gate to emitter leakage current I
Notes
(1)
Pulse width 80 μs, duty factor 0.1 %
(2)
Pulse width 5.0 μs; single shot
V
(BR)CES
(BR)CES
CE(on)
GE(th)
GE(th)
fe
CES
FM
GES
/T
(2)
VGE = 0 V, IC = 250 μA 600 - - V
TJVGE = 0 V, IC = 1.0 mA - 0.63 - V/°C
IC = 13 A
V
= 24 A - 1.80 -
I
C
= 13 A, TJ = 150 °C - 1.56 1.73
I
C
GE
See fig. 2, 5
VCE = VGE, IC = 250 μA
J
VCE = 100 V, IC = 10 A 11 18 - S
VGE = 0 V, VCE = 600 V - - 250
V
= 0 V, VCE = 600 V, TJ = 150 °C - - 3500
GE
IC = 15 A
I
= 15 A, TJ = 150 °C - 1.2 1.6
C
See fig. 13
VGE = ± 20 V - - ± 100 nA
Vishay Semiconductors
°C/WJunction to case, each DIODE, one DIODE in conduction R
- 1.80 2.3
= 15 V
3.0 - 6.0
-- 13-mV/°C
-1.31.7
V
μA
V
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94488
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CPV364M4KPbF
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Total switching loss E
Short circuit withstand time t
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total switching loss E
Internal emitter inductance L
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse recovery charge I
Diode reverse recovery charge Q
Diode peak rate of fall of recovery
during t
b
dI
g
ge
gc
d(on)
r
d(off)
f
on
off
ts
sc
d(on)
r
d(off)
f
ts
E
ies
oes
res
rr
rr
rr
(rec)M
IC = 13 A
= 400 V
V
CC
V
= 15 V
GE
See fig. 8
TJ = 25 °C
I
= 13 A, VCC = 480 V
C
V
= 15 V, RG = 10
GE
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18
VCC = 360 V,TJ = 125 °C
V
= 15 V, RG = 10 , V
GE
CPK
< 500 V
TJ = 150 °C, see fig. 9, 10, 11, 18
I
= 13 A, VCC = 480 V
C
V
= 15 V, RG = 10
GE
Energy losses include “tail” and
diode reverse recovery
Measured 5 mm from package - 7.5 - nH
VGE = 0 V
= 30 V
V
CC
ƒ = 1.0 MHz
See fig. 7
/dt
TJ = 25 °C
T
= 125 °C - 74 120
J
TJ = 25 °C
T
= 125 °C - 6.5 10
J
TJ = 25 °C
T
= 125 °C - 220 600
J
= 25 °C
T
J
T
= 125 °C - 160 -
J
See fig. 14
See fig. 15
See fig. 16
See fig. 17
I
= 15 A
F
V
= 200 V
R
dI/dt = 200 A/μs
Vishay Semiconductors
- 110 170
-1421
-4974
-50-
-30-
- 110 170
- 91 140
-0.56-
-0.28-
- 0.84 1.1
10 - - μs
-47-
-30-
- 250 -
- 150 -
-1.28-mJ
- 1600 -
- 130 -
-55-
-4260
-4.06.0
- 80 180
- 188 -
nCGate to emitter charge (turn-on) Q
ns
mJTurn-off switching loss E
ns
pFOutput capacitance C
ns
A
nC
A/μs
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94488
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
0.1 1 10 100
0
2
4
6
8
10
12
14
16
18
f, Frequency (KHz)
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rat ed Voltage
0.00
0.59
1.17
1.76
Total Output Power (kW)
3.51
5.27
2.34
2.93
4.10
4.68
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 C
J
°
T = 150 C
J
°
1
10
100
5 6 7 8 9 10
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50 V
5µs PULSE WIDTH
CC
T = 25 C
J
°
T = 150 C
J
°
0 5 10 15 20 25 30
0
20
40
60
80
100
120
140
160
DC
Square wave (D=0.50)
80% rated Vr applied
see note (2)
TC, Case Temperature (°C)
Maximum DC Collector Current (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of Fundamental)
RMS
CPV364M4KPbF
Vishay Semiconductors
Fig. 2 - Typical Output Characteristics
Revision: 11-Jun-13
Fig. 3 - Typical Output Characteristics
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Fig. 4 - Maximum Collector Current vs.
Case Temperature
4.0
V = 15 V
GE
80 us PULSE WIDTH
3.0
2.0
CE
V , Collector-to-Emitter Voltage(V)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
J
I = A26
C
I = A13
C
I = A6.5
C
°
Junction Temperature
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Document Number: 94488
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