Vishay CPV364M4F Data Sheet

www.vishay.com

IMS-2

IGBT SIP Module

(Fast IGBT)

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE

per phase (4.6 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 V

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

at I

= 15 A, 25 °C

C

Package SIP

Circuit Three Phase Inverter

18 A

125 °C

1.35 V

RMS

DC

CPV364M4FPbF

Vishay Semiconductors

FEATURES

• Fully isolated printed circuit board mount
package

• Switching-loss rating includes all “tail” losses

•HEXFRED® soft ultrafast diodes

• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The IGBT technology is the key to Vishay‘s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage 
temperature range

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

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), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19)

CES

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CES

TC = 25 °C 27

C

(1)

CM

(2)

LM

F

FM

GE

ISOL

D

, T

T

J

Stg

= 100 °C 15

T

C

TC = 100 °C 9.3

Any terminal to case, t = 1 minute 2500 V

TC = 25 °C 63

T

= 100 °C 25

C

1

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600 V

80

80

80

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

Document Number: 94487

lbf · in

(N · m)

A

RMS

W

°C

CPV364M4FPbF

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

(IGBT) - 2.0

thJC

(DIODE) - 3.0

thJC

(MODULE) 0.10 -

thCS

20 - g

0.7 - oz.

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown
voltage

Temperature coefficient of 
breakdown voltage

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of 
threshold voltage

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width  80 μs, duty factor  0.1 %

(2)

Pulse width 5.0 μs; single shot

V

V

V

(1)

(BR)CES

(BR)CES

VGE = 0 V, IC = 250 μA 600 - - V

TJVGE = 0 V, IC = 1.0 mA - 0.69 - V/°C

IC = 15 A

= 15 V

V

CE(on)

GE(th)

GE(th)

fe

I

= 27 A - 1.60 -

C

= 15 A, TJ = 150 °C - 1.35 -

I

C

/T

(2)

VCE = VGE, IC = 250 μA

J

VCE = 100 V, IC = 27 A 9.2 12 - S

GE

See fig. 2, 5

VGE = 0 V, VCE = 600 V - - 250

CES

FM

GES

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

IC = 15 A

I

= 15 A, TJ = 150 °C - 1.2 1.6

C

See fig. 13

VGE = ± 20 V - - ± 100 nA

Vishay Semiconductors

°C/WJunction to case, each DIODE, one DIODE in conduction R

- 1.35 1.5

3.0 - 6.0

-- 12-mV/°C

-1.31.7

V

μA

V

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CPV364M4FPbF

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery charge I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery
during t

b

dI

(rec)M

g

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

ies

oes

res

rr

rr

rr

IC = 15 A

= 400 V

V

CC

V

= 15 V

GE

See fig. 8

TJ = 25 °C
I

= 15 A, VCC = 480 V

C

V

= 15 V, RG = 10 

GE

Energy losses include “tail” and diode 
reverse recovery
See fig. 9, 10, 11, 18

TJ = 150 °C
I

= 15 A, VCC = 480 V

C

V

= 15 V, RG = 10 

GE

Energy losses include “tail” and 
diode reverse recovery
See fig. 9, 10, 11, 18

VGE = 0 V
V

= 30 V

CC

ƒ = 1.0 MHz
See fig. 7

/dt

TJ = 25 °C

T

= 125 °C - 74 120

J

TJ = 25 °C

T

= 125 °C - 6.5 10

J

TJ = 25 °C

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 160 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 15 A

F

V

= 200 V

R

dI/dt = 200 A/μs

Vishay Semiconductors

- 100 160

-1523

-3756

-42-

-18-

- 220 330

- 160 240

-0.46-

-0.86-

- 1.32 1.8

-39-

-19-

- 410 -

- 290 -

-2.5-mJ

- 2200 -

- 140 -

-29-

-4260

-4.06.0

- 80 180

- 188 -

nCGate to emitter charge (turn-on) Q

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

ns

A

nC

A/μs















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Document Number: 94487

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1

10

100

011

CE

C

I , Collector-to-Emitter Current (A)

V , Collector-to-Emitter Voltage (V)

T = 150°C

T = 25°C

J

J

V = 15V
20µs PULSE WIDTH

GE

1

10

100

5678910

C

I , Collector-to-Emitter Current (A)

GE

T = 25°C

T = 150°C

J

J

V , Gate-to-Emitter Voltage (V)

V = 50V
5µs PULSE WIDTH

CC

25 50 75 100 125 150

0

5

10

15

20

25

30

T , Case Temperat ure ( C)

Maximum DC Collector Current(A)

C

°

-60 -40 -20 0 20 40 60 80 100 120 140 160

1.0

2.0

3.0

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

J

°

CE

V = 15V
80 us PULSE W IDTH

GE

I = A7.5

C

I = A15

C

I = A30

C

CPV364M4FPbF

Vishay Semiconductors

25

Tc = 90°C
Tj = 125°C

20

15

10

LOAD CURRENT (A)

5

0

0.1 1 10 100

Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rat ed Voltage

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

7.34

5.87

4.40

2.94

Total Output Power (kW)

1.47

0.00

Fig. 2 - Typical Output Characteristics

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Fig. 3 - Typical Transfer Characteristics

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Fig. 4 - Maximum Collector Current vs. Case Temperature

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

4

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0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rect angular Pulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE
(THERMAL RESPONSE)

Thermal Response (Z )

P

t

2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

12

J

DM

thJC

C

0 20 40 60 80 100 120

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

G

GE

V = 400V

I = 15A

CC
C

0 10 20 30 40 50

1.30

1.35

1.40

1.45

R , Gate Resistance ( )

Total Switching Losses (mJ)

G

V = 480V
V = 15V
T = 25 C

I = 15A

CC

GE
J
C

°

Ω

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.1

1

10

T , Junction Temperature ( C )

Total Switching Losses (mJ)

J

°

R = 10
V = 15V
V = 480V

G
GE
CC

I = A

30

C

I = A

15

C

I = A

7.5

C

Ω

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

CPV364M4FPbF

Vishay Semiconductors

4000

3000

2000

1000

0

VGE = 0V f = 1 MHz

Cies = Cge + Cgc + Cce SHORTED

Cres = Cce

Coes = Cce + Cgc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

001011

Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate Resistance

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

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Fig. 10 - Typical Switching Losses vs. Junction Temperature

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0 5 10 15 20 25 30

0.0

1.0

2.0

3.0

4.0

5.0

6.0

I , Collector-to-emitter Current (A)

Total Switching Losses (mJ)

C

R = 10
T = 150 C
V = 480V
V = 15V

G
J
CC
GE

°

Ω

1

10

100

1000

1 10 100 1000

V = 20V
T = 125 C

GE
J

o

V , C ollector-to-Emitter Vol tage (V)

I , Collector-to-Emitter Current (A)

CE

C

SAFE OPERATING AREA

1

10

100

0.8 1.2 1.6 2.0 2.4

FM

F

Instantaneous Forward Current - I (A)

Forward Voltage Drop - V (V)

T = 150°C

T = 125°C

T = 25°C

J

J

J

CPV364M4FPbF

Vishay Semiconductors

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

Fig. 12 - Turn-Off SOA

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Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

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1

10

100

0001001

f

di /dt - (A/µs)

I - (A)

IRRM

I = 5.0A

I = 15A

I = 30A

F

F

F

V = 200V
T = 125°C
T = 25 °C

R

J

J

0

200

400

600

800

0001001

f

di /dt - (A/µs)

RR

Q - (nC)

I = 30A

I = 15A

I = 5.0A

F

F

F

V = 200V
T = 125°C
T = 25°C

R

J

J

100

80

60

rr

t - (ns)

40

I = 30A

F

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 15A

F

I = 5.0A

F

CPV364M4FPbF

Vishay Semiconductors

20

di /dt - (A/µs)

f

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

Fig. 15 - Typical Recovery Current vs. dI

/dt

F

0001001

Fig. 16 - Typical Stored Charge vs. dI

1000

V = 200V

R

T = 12 5°C

J

T = 25 °C

J

I = 5.0A

F

I = 15A

F

I = 30A

F

di(rec)M/dt - (A/µs)

100

di /dt - (A/µs)

f

Fig. 17 - Typical dI

/dt vs dIF/dt

(rec)M

/dt

F

0001001

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Same type

device as

D.U.T.

D.U.T.

430 µF

80 %

of V

CE

t1

Ic

Vce

t1

t2

90% Ic

10% Vce

td(off)

tf

Ic

5% Ic

t1+5µS

Vce ic dt

90% Vge

+Vge

∫

Eoff =

∫

Vce ie dt

t2

t1

5% Vce

Ic

Ipk

Vcc

10% Ic

Vce

t1

t2

DUT VOLTAGE
AND CURRENT

GATE VOLTAG E D.U.T.

+Vg

10% +Vg

90% Ic

tr

td(on)

Eon =

DIODE REVERSE
RECOV ERY ENE RGY

tx

∫

Erec =

t4

t3

Vd id dt

t4

t3

DIODE RE COVE RY
WAVEFORMS

Ic

Vpk

10% Vcc

Irr

10% Irr

Vcc

trr

∫

Qrr =

trr

tx

id dt

CPV364M4FPbF

Vishay Semiconductors

Fig. 18a - Test Circuit for Measurement of ILM, Eon, E

I

, t

, tr, t

rr

d(on)

d(off)

, t

f

Fig. 18b - Test Waveforms for Circuit for Fig. 18a,

Defining E

, t

, t

off

d(off)

f

off(diode)

, trr, Qrr,

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

on

d(on)

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Vg

GATE SIGNAL
DEVIC E UNDER TE S

CURRENT D.U.T.

Defining E

, trr, Qrr, I

rec

, t

r

rr

VOLTAGE IN D.U.T.

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CURRENT IN D1

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t0

t1

t2

Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit

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D.U.T.

50 V

6000 µF

100 V

1000 V

L

V

C

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

CPV364M4FPbF

Vishay Semiconductors

480 V

=

R

L

4 x I

at 25 °C

0 - 480 V

1

C

Q1

3

Q2

618

71319

Q3D1

9

41016

D2

12

D3

D4

Q5

15

Q6

D5

D6Q4

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95066

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Document Number: 94487

DIMENSIONS in millimeters (inches)

IMS-2 Package Outline (13 Pins)

7.87 (0.310)

5.46 (0.215)

1.27 (0.050)

6.10 (0.240)

3.05 ± 0.38

(0.120 ± 0.015)

0.51 (0.020)

0.38 (0.015)

62.43 (2.458)

53.85 (2.120)

Ø 3.91 (0.154)

2 x

21.97 (0.865)

3.94 (0.155)

4.06 ± 0.51

(0.160 ± 0.020)

5.08 (0.200)
6 x

1.27 (0.050)
13 x

2.54 (0.100)
6 x

0.76 (0.030)
13 x

1 3 4 6 7 9 10 12 13 15 16 18 19171411258

Outline Dimensions

Vishay Semiconductors

IMS-2 (SIP)

Notes

(1)

Tolerance uless otherwise specified ± 0.254 mm (0.010")

(2)

Controlling dimension: inch

(3)

Terminal numbers are shown for reference only

Document Number: 95066 For technical questions, contact: [e-mail]
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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

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