Vishay CPV363M4UPBF Data Sheet

IGBT SIP Module

(Ultrafast IGBT)

FEATURES

• Fully isolated printed circuit board mount package

CPV363M4UPbF

Vishay High Power Products

• Switching-loss rating includes all “tail” losses

• HEXFRED® soft ultrafast diodes

• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve

IMS-2

• Totally lead (Pb)-free

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (2.1 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

= 6.8 A, 25 °C

at I

C

7.1 A

125 °C

1.7 V

RMS

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay’s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage temperature range T

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

), VGE = 20 V, L = 10 µH, RG = 23 Ω (see fig. 19)

CES

CM

LM

J

CES

FM

ISOL

, T

TC = 25 °C 13

C

T

= 100 °C 6.8

C

(1)

(2)

TC = 100 °C 6.1

F

GE

Any terminal to case, t = 1 min 2500 V

TC = 25 °C 36

D

T

= 100 °C 14

C

Stg

600 V

40

40

40

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

(N ⋅ m)

RoHS

COMPLIANT

A

RMS

W

°C

lbf ⋅ in

Document Number: 94486 For technical questions, contact: [e-mail]
Revision: 01-Sep-08 1

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CPV363M4UPbF

Vishay High Power Products

IGBT SIP Module

(Ultrafast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage ΔV

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs; single shot

(BR)CES

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.63 - V/°C

(BR)CES

CE(on)

GE(th)

/ΔT

GE(th)

J

(2)

fe

CES

FM

GES

(IGBT) - 3.5

thJC

(DIODE) - 5.5

thJC

(MODULE) 0.10 -

thCS

°C/WJunction to case, each DIODE, one DIODE in conduction R

20 - g

0.7 - oz.

VGE = 0 V, IC = 250 µA 600 - - V

IC = 6.8 A

V

= 15 V

= 13 A - 2.00 -

I

C

= 6.8 A, TJ = 150 °C - 1.70 -

I

C

GE

See fig. 2, 5

VCE = VGE, IC = 250 µA

-1.702.2

3.0 - 6.0

-- 11-mV/°C

VCE = 100 V, IC = 6.8 A 4.0 6.0 - S

VGE = 0 V, VCE = 600 V - - 250

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

IC = 12 A

I

= 12 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

-1.41.7

VGE = ± 20 V - - ± 100 nA

V

µA

V

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Document Number: 94486

2 Revision: 01-Sep-08

CPV363M4UPbF

IGBT SIP Module

Vishay High Power Products

(Ultrafast IGBT)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery charge I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery
during t

b

dI

(rec)M

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

ies

oes

res

rr

rr

g

IC = 6.8 A

= 400 V

V

CC

See fig. 8

TJ = 25 °C
I

= 6.8 A, VCC = 480 V

C

= 15 V, RG = 23 Ω

V

GE

Energy losses include “tail” and diode
reverse recovery.
See fig. 9, 10, 11, 18

TJ = 150 °C

= 6.8 A, VCC = 480 V

I

C

V

= 15 V, RG = 23 Ω

GE

Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18

VGE = 0 V
V

= 30 V

CC

ƒ = 1.0 MHz
See fig. 7

TJ = 25 °C

T

= 125 °C - 83 120

J

TJ = 25 °C

T

= 125 °C - 5.6 10

J

TJ = 25 °C

rr

/dt

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 116 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 12 A

F

V

= 200 V

R

dI/dt = 200 A/µs

-5379

-7.712

nCGate to emitter charge (turn-on) Q

-2131

-43-

-14-

-95140

ns

-83190

-0.17-

-0.15-

mJTurn-off switching loss E

- 0.32 0.45

-41-

-16-

- 110 -

ns

- 230 -

-0.52-mJ

- 1100 -

-73-

pFOutput capacitance C

-14-

-4260

-3.56.0

-80180

- 180 -

ns

A

nC

A/µs

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Revision: 01-Sep-08 3

CPV363M4UPbF

Vishay High Power Products

12

10

8

6

4

LOAD CURRENT (A)

2

0

0.1 1 10 100

100

IGBT SIP Module

(Ultrafast IGBT)

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

14

12

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rat ed Voltage

3.50

2.92

2.33

1.75

1.17

Total Output Power (kW)

0.58

0.00

V = 15V

GE

10

T = 150°C

J

T = 25°C

1

C

I , Collector-to-Emitter Current (A)

0.1

V , Collector-to-Emitter Voltage (V)

CE

J

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

100

J

T = 150°C

10

T = 25°C

J

1

C

I , Collector-to-Emitter Current (A)

0.1
5678910

V , Gate-to-Emitter Voltage (V)

GE

V = 10V

CC

5µs PULSE WIDTH

10

8

6

4

2

Maximum DC Collector Current (A)

0111.0

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs. Case Temperature

3.0

V = 15V

GE

80 us PULSE WIDTH

I = A

13.6

C

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A

6.8

C

I = A3.4

C

°

Fig. 3 - Typical Transfer Characteristics

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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Document Number: 94486

4 Revision: 01-Sep-08

CPV363M4UPbF

2000

1600

1200

IGBT SIP Module

Vishay High Power Products

(Ultrafast IGBT)

10

D = 0.50

thJC

1

0.20

0.10

0.05

0.02

0.1

0.01

SI NGLE PULSE

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

C

ies

(THERMAL RESPONSE)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc c e

C = C

res gc

C = C + C

oes ce gc

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

0.40

0.38

0.36

J

V = 480V

CC

V = 15V

GE

T = 25 C

J

I = 6.8A

C

P

DM

t

1

t

2

12

DM

thJC

C

°

C

800

oes

C, Capacitance (pF)

C

400

res

0

V , Collector-to-Emitter Voltage (V)

CE

001011

Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage

20

V = 400V

CC

I = 6.8A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 10 20 30 40 50 60

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

0.34

0.32

Total Switching Losses (mJ)

0.30
0 12 24 36 48 60

R , Gate Resistance ( )

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate Resistance

10

R = 23

Ω

G

V = 15V

GE

V = 480V

CC

I = A

13.6

1

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

C

I = A

6.8

C

I = A

3.4

C

°

Fig. 10 - Typical Switching Losses vs. Junction Temperature

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CPV363M4UPbF

Vishay High Power Products

1.2

1.0

0.8

0.6

0.4

Total Switching Losses (mJ)

0.2

0.0
0 2 4 6 8 10 12 14 16

Ω

R = 23

G

T = 150 C
V = 480V
V = 15V

°

J
CC
GE

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

IGBT SIP Module

(Ultrafast IGBT)

100

100

V = 20V

GE

T = 125 C

10

1

C

I , Collector-to-Emitter Current (A)

0.1
1 10 100 1000

o

J

SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

F

T = 150°C

J

T = 125°C

10

J

T = 25°C

J

Instantaneous Forward Current - I (A)

1

0.4 1.4 2.4

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

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Document Number: 94486

6 Revision: 01-Sep-08

CPV363M4UPbF

IGBT SIP Module

160

V = 200V

R

T = 125°C

J

T = 25 °C

J

120

I = 24A

F

I = 12A

F

80

rr

t - (ns)

40

0

di /dt - (A/µs)

f

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

I = 6.0A

F

(Ultrafast IGBT)

0001001

Vishay High Power Products

600

V = 200V

R

T = 12 5°C

J

T = 25 °C

J

400

I = 24A

RR

Q - (nC)

200

I = 6.0A

F

0

I = 12A

F

di /dt - (A/µs)

f

Fig. 16 - Typical Stored Charge vs. dI

F

0001001

/dt

F

100

V = 200V

R

T = 125°C

J

T = 25 °C

J

I = 24A

F

I = 12A

F

di /dt - (A/µs)

f

IRRM

I - (A)

10

1

I = 6.0A

F

Fig. 15 - Typical Recovery Current vs. dI

10000

V = 200V

R

T = 12 5°C

J

T = 25 °C

J

1000

100

di(rec)M/dt - (A/µs)

0001001

/dt

F

10

Fig. 17 - Typical dI

I = 6.0A

F

I = 24A

F

di /dt - (A/µs)

f

I = 12A

(rec)M

F

0001001

/dt vs dIF/dt

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Revision: 01-Sep-08 7

CPV363M4UPbF

Vishay High Power Products

Same type

device as

D.U.T.

80 %

of V

CE

Fig. 18a - Test Circuit for Measurements of ILM, Eon, E

+Vge

I

rr

430 µF

, t

d(on)

, tr, t

90% Vge

d(off)

, t

D.U.T.

f

IGBT SIP Module

(Ultrafast IGBT)

, trr, Qrr,

off(diode)

GATE VOLTAG E D.U.T.

Vcc

10% +Vg

10% Ic

td(on)

Vce

tr

t1

90% Ic

5% Vce

+Vg

DUT VOLTAGE
AND CURRENT

Ipk

t2

Vce ie dt

Eon =

∫

t1

t2

Ic

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

Ic

, t

, t

on

d(on)

r

trr

Qrr =

trr

id dt

∫

tx

Vce

Ic

td(off)

10% Vce

t1

90% Ic

Ic

tf

5% Ic

t1+5µS

Vce ic dt

Eoff =

∫

t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

, t

off

d(off)

f

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Vg

GATE SIGNAL
DEVIC E UNDER TE S

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

tx

10% Vcc

Vpk

DIODE REVERSE
RECOV ERY ENER GY

Irr

Defining E

t3

, trr, Qrr, I

rec

10% Irr

DIODE RE COVERY
WAVEFORMS

t4

Erec =

Vd id dt

∫

t3

t4

rr

Vcc

t0

t1

t2

Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit

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Document Number: 94486

8 Revision: 01-Sep-08

CPV363M4UPbF

1000 V

50 V

6000 µF

100 V

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

IGBT SIP Module

Vishay High Power Products

(Ultrafast IGBT)

L

V

C

Q1

3

D.U.T.

0 - 480 V

1

Q3D1

9

41016

D3

Q5

15

D5

480 V

=

R

L

at 25 °C

4 x I

C

Q2

618

D2

12

71319

D4

Q6

D6Q4

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95066

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DIMENSIONS in millimeters (inches)

IMS-2 Package Outline (13 Pins)

7.87 (0.310)

5.46 (0.215)

1.27 (0.050)

6.10 (0.240)

3.05 ± 0.38

(0.120 ± 0.015)

0.51 (0.020)

0.38 (0.015)

62.43 (2.458)

53.85 (2.120)

Ø 3.91 (0.154)

2 x

21.97 (0.865)

3.94 (0.155)

4.06 ± 0.51

(0.160 ± 0.020)

5.08 (0.200)
6 x

1.27 (0.050)
13 x

2.54 (0.100)
6 x

0.76 (0.030)
13 x

1 3 4 6 7 9 10 12 13 15 16 18 19171411258

Outline Dimensions

Vishay Semiconductors

IMS-2 (SIP)

Notes

(1)

Tolerance uless otherwise specified ± 0.254 mm (0.010")

(2)

Controlling dimension: inch

(3)

Terminal numbers are shown for reference only

Document Number: 95066 For technical questions, contact: [e-mail]
Revision: 30-Jul-07 1

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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