Vishay CPV363M4UPBF Data Sheet

IGBT SIP Module

(Ultrafast IGBT)

FEATURES

• Fully isolated printed circuit board mount package

CPV363M4UPbF

Vishay High Power Products

• Switching-loss rating includes all “tail” losses

• HEXFRED® soft ultrafast diodes

• Optimized for medium speed 1 to 10 kHz See fig. 1 for current vs. frequency curve

IMS-2

• Totally lead (Pb)-free

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (2.1 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

= 6.8 A, 25 °C

at I

C

7.1 A

125 °C

1.7 V

RMS

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay’s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage temperature range T

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

), VGE = 20 V, L = 10 µH, RG = 23 Ω (see fig. 19)

CES

CM

LM

J

CES

FM

ISOL

, T

TC = 25 °C 13

C

T

= 100 °C 6.8

C

(1)

(2)

TC = 100 °C 6.1

F

GE

Any terminal to case, t = 1 min 2500 V

TC = 25 °C 36

D

T

= 100 °C 14

C

Stg

600 V

40

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

(N ⋅ m)

RoHS

COMPLIANT

A

RMS

W

°C

lbf ⋅ in

Document Number: 94486 For technical questions, contact: ind-modules@vishay.com Revision: 01-Sep-08 1

www.vishay.com

CPV363M4UPbF

Vishay High Power Products

IGBT SIP Module

(Ultrafast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage ΔV

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs; single shot

(BR)CES

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.63 - V/°C

(BR)CES

CE(on)

GE(th)

/ΔT

GE(th)

J

(2)

fe

CES

FM

GES

(IGBT) - 3.5

thJC

(DIODE) - 5.5

thJC

(MODULE) 0.10 -

thCS

°C/WJunction to case, each DIODE, one DIODE in conduction R

20 - g

0.7 - oz.

VGE = 0 V, IC = 250 µA 600 - - V

IC = 6.8 A

V

= 15 V

= 13 A - 2.00 -

I

C

= 6.8 A, TJ = 150 °C - 1.70 -

I

C

GE

See fig. 2, 5

VCE = VGE, IC = 250 µA

-1.702.2

3.0 - 6.0

-- 11-mV/°C

VCE = 100 V, IC = 6.8 A 4.0 6.0 - S

VGE = 0 V, VCE = 600 V - - 250

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

IC = 12 A

I

= 12 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

-1.41.7

VGE = ± 20 V - - ± 100 nA

V

µA

V

www.vishay.com For technical questions, contact: ind-modules@vishay.com

Document Number: 94486

2 Revision: 01-Sep-08

CPV363M4UPbF

IGBT SIP Module

Vishay High Power Products

(Ultrafast IGBT)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery charge I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery during t

b

dI

(rec)M

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

ies

oes

res

rr

g

IC = 6.8 A

= 400 V

V

CC

See fig. 8

TJ = 25 °C I

= 6.8 A, VCC = 480 V

C

= 15 V, RG = 23 Ω

V

GE

Energy losses include “tail” and diode reverse recovery. See fig. 9, 10, 11, 18

TJ = 150 °C

= 6.8 A, VCC = 480 V

I

C

V

= 15 V, RG = 23 Ω

GE

Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18

VGE = 0 V V

= 30 V

CC

ƒ = 1.0 MHz See fig. 7

TJ = 25 °C

T

= 125 °C - 83 120

J

TJ = 25 °C

T

= 125 °C - 5.6 10

J

TJ = 25 °C

rr

/dt

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 116 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 12 A

F

V

= 200 V

R

dI/dt = 200 A/µs

-5379

-7.712

nCGate to emitter charge (turn-on) Q

-2131

-43-

-14-

-95140

ns

-83190

-0.17-

-0.15-

mJTurn-off switching loss E

- 0.32 0.45

-41-

-16-

- 110 -

ns

- 230 -

-0.52-mJ

- 1100 -

-73-

pFOutput capacitance C

-14-

-4260

-3.56.0

-80180

- 180 -

ns

A

nC

A/µs

Document Number: 94486 For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Revision: 01-Sep-08 3

CPV363M4UPbF

Vishay High Power Products

12

10

8

6

4

LOAD CURRENT (A)

2

0

0.1 1 10 100

100

IGBT SIP Module

(Ultrafast IGBT)

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

14

12

Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rat ed Voltage

3.50

2.92

2.33

1.75

1.17

Total Output Power (kW)

0.58

0.00

V = 15V

GE

10

T = 150°C

J

T = 25°C

1

C

I , Collector-to-Emitter Current (A)

0.1

V , Collector-to-Emitter Voltage (V)

CE

J

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

100

J

T = 150°C

10

T = 25°C

J

1

C

I , Collector-to-Emitter Current (A)

0.1 5678910

V , Gate-to-Emitter Voltage (V)

GE

V = 10V

CC

5µs PULSE WIDTH

10

8

6

4

2

Maximum DC Collector Current (A)

0111.0

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs. Case Temperature

3.0

V = 15V

GE

80 us PULSE WIDTH

I = A

13.6

C

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A

6.8

C

I = A3.4

C

°

Fig. 3 - Typical Transfer Characteristics

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

www.vishay.com For technical questions, contact: ind-modules@vishay.com

Document Number: 94486

4 Revision: 01-Sep-08