Vishay CPV363M4U Data Sheet

www.vishay.com

IMS-2

IGBT SIP Module

(Ultrafast IGBT)

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (2.1 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 V

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

at I

= 6.8 A, 25 °C

C

Package SIP

Circuit Three Phase Inverter

7.1 A

125 °C

1.7 V

RMS

DC

CPV363M4UPbF

Vishay Semiconductors

FEATURES

• Fully isolated printed circuit board mount
package

• Switching-loss rating includes all “tail” losses

•HEXFRED® soft ultrafast diodes

• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage temperature range T

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

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), VGE = 20 V, L = 10 μH, RG = 23  (see fig. 19)

CES

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CM

LM

J

CES

C

F

FM

GE

ISOL

, T

TC = 25 °C 13

= 100 °C 6.8

T

C

(1)

(2)

TC = 100 °C 6.1

Any terminal to case, t = 1 min 2500 V

TC = 25 °C 36

D

T

= 100 °C 14

C

Stg

1

, [e-mail], [e-mail]

600 V

40

40

40

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

Document Number: 94486

lbf  in
(N m)

A

RMS

W

°C

CPV363M4UPbF

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

(IGBT) - 3.5

thJC

(DIODE) - 5.5

thJC

(MODULE) 0.10 -

thCS

20 - g

0.7 - oz.

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown
voltage

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage V

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width  80 μs, duty factor  0.1 %

(2)

Pulse width 5.0 μs; single shot

V

(BR)CES

(BR)CES

CE(on)

GE(th)

GE(th)

fe

CES

FM

GES

/T

(2)

VGE = 0 V, IC = 250 μA 600 - - V

TJVGE = 0 V, IC = 1.0 mA - 0.63 - V/°C

IC = 6.8 A

V

= 15 V

= 13 A - 2.00 -

I

C

= 6.8 A, TJ = 150 °C - 1.70 -

I

C

GE

See fig. 2, 5

VCE = VGE, IC = 250 μA

J

VCE = 100 V, IC = 6.8 A 4.0 6.0 - S

VGE = 0 V, VCE = 600 V - - 250

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

IC = 12 A

I

= 12 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

VGE = ± 20 V - - ± 100 nA

Vishay Semiconductors

°C/WJunction to case, each DIODE, one DIODE in conduction R

- 1.70 2.2

3.0 - 6.0

-- 11-mV/°C

-1.41.7

V

μA

V

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CPV363M4UPbF

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery charge I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery
during t

b

dI

d(on)

d(off)

d(on)

d(off)

oes

(rec)M

on

off

ies

res

rr

rr

g

ge

gc

r

f

IC = 6.8 A

= 400 V

V

CC

See fig. 8

TJ = 25 °C
I

= 6.8 A, VCC = 480 V

C

V

= 15 V, RG = 23

GE

Energy losses include “tail” and diode 
reverse recovery. 
See fig. 9, 10, 11, 18

ts

TJ = 150 °C
I

= 6.8 A, VCC = 480 V

r

C

V

= 15 V, RG = 23 

GE

Energy losses include “tail” and 

f

ts

diode reverse recovery
See fig. 9, 10, 11, 18

VGE = 0 V
V

= 30 V

CC

ƒ = 1.0 MHz
See fig. 7

TJ = 25 °C

T

= 125 °C - 83 120

J

TJ = 25 °C

T

= 125 °C - 5.6 10

J

TJ = 25 °C

rr

/dt

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 116 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 12 A

F

V

= 200 V

R

dI/dt = 200 A/μs

Vishay Semiconductors

-5379

-7.712

-2131

-43-

-14-

- 95 140

- 83 190

-0.17-

-0.15-

- 0.32 0.45

-41-

-16-

-110-

-230-

-0.52-mJ

- 1100 -

-73-

-14-

-4260

-3.56.0

- 80 180

-180-

nCGate to emitter charge (turn-on) Q

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

ns

A

nC

A/μs

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0.1 1 10 100

0

2

4

6

8

10

12

f, Frequency (KHz)

LOAD CURRENT (A)

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rat ed Voltage

0.00

0.58

1.17

1.75

2.33

2.92

3.50

Total Output Power (kW)

0.1

1

10

100

5678910

C

I , Collector-to-Emitter Current (A)

GE

T = 25°C

T = 150°C

J

J

V , Gate-to-Emitter Voltage (V)

V = 10V
5µs PULSE WIDTH

CC

-60 -40 -20 0 20 40 60 80 100 120 140 160

1.0

2.0

3.0

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

J

°

CE

V = 15V
80 us PULSE W IDTH

GE

I = A3.4

C

I = A

6.8

C

I = A

13.6

C

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

CPV363M4UPbF

Vishay Semiconductors

100

10

T = 150°C

J

T = 25°C

1

C

I , Collector-to-Emitter Current (A)

0.1

V , Collector-to-Emitter Voltage (V)

CE

J

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

14

12

10

8

6

4

2

Maximum DC Collector Current (A)

0111.0

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

V = 15V

GE

Fig. 4 - Maximum Collector Current vs. Case Temperature

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Fig. 3 - Typical Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SI NGLE PULSE
(THERMAL RESPONSE)

Thermal Response (Z )

P

t

2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

12

J

DM

thJC

C

0 10 20 30 40 50 60

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

G

GE

V = 400V

I = 6.8A

CC
C

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

CPV363M4UPbF

Vishay Semiconductors

2000

1600

1200

800

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc c e

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C, Capacitance (pF)

C

400

res

0

V , Collector-to-Emitter Voltage (V)

CE

001011

Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage

0.40

V = 480V

CC

V = 15V

GE

°

T = 25 C

J

I = 6.8A

0.38

C

0.36

0.34

0.32

Total Switching Losses (mJ)

0.30
0 12 24 36 48 60

R , Gate Resistance ( )

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate Resistance

10

R = 23
V = 15V
V = 480V

1

GE
CC

Ω

G

I = A

13.6

C

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

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Fig. 10 - Typical Switching Losses vs. Junction Temperature

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I = A

C

I = A

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

C

°

Document Number: 94486

6.8

3.4

www.vishay.com

0 2 4 6 8 10 12 14 16

0.0

0.2

0.4

0.6

0.8

1.0

1.2

I , Collector-to-emitter Current (A)

Total Switching Losses (mJ)

C

R = 23
T = 150 C
V = 480V
V = 15V

G

J
CC
GE

°

Ω

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

100

CPV363M4UPbF

Vishay Semiconductors

100

V = 20V

GE

T = 125 C

10

1

C

I , Collector-to-Emitter Current (A)

0.1
1 10 100 1000

o

J

SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

F

T = 150°C

J

T = 125°C

10

J

T = 25°C

J

Instantaneous Forward Current - I (A)

1

0.4 1.4 2.4

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

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1

10

100

0001001

f

di /dt - (A/µs)

I - (A)

IRRM

I = 6.0A

I = 12A

I = 24A

F

F

F

V = 200V
T = 125°C
T = 25 °C

R

J

J

0

200

400

600

0001001

f

di /dt - (A/µs)

RR

Q - (nC)

I = 6.0A

I = 12A

I = 24A

V = 200V
T = 12 5°C
T = 25 °C

R

J

J

F

F

F

160

120

80

rr

t - (ns)

40

I = 24A

F

V = 200V

R

T = 125°C

J

T = 25 °C

J

I = 12A

F

I = 6.0A

F

CPV363M4UPbF

Vishay Semiconductors

0

di /dt - (A/µs)

f

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

Fig. 15 - Typical Recovery Current vs. dI

/dt

F

0001001

Fig. 16 - Typical Stored Charge vs. dI

10000

V = 200V

R

T = 12 5°C

J

T = 25 °C

J

1000

100

di(rec)M/dt - (A/µs)

10

Fig. 17 - Typical dI

I = 6.0A

F

I = 24A

F

di /dt - (A/µs)

f

(rec)M

I = 12A

/dt vs dIF/dt

F

/dt

F

0001001

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Same type

device as

D.U.T.

D.U.T.

430 µF

80 %

of V

CE

t1

Ic

Vce

t1

t2

90% Ic

10% Vce

td(off)

tf

Ic

5% Ic

t1+5µS

Vce ic dt

90% Vge

+Vge

∫

Eoff =

DIODE REVERSE
RECOV ERY ENER GY

tx

∫

Erec =

t4

t3

Vd id dt

t4

t3

DIODE RE COVERY
WAVEFORMS

Ic

Vpk

10% Vcc

Irr

10% Irr

Vcc

trr

∫

Qrr =

trr

tx

id dt

10% +Vg

CPV363M4UPbF

Vishay Semiconductors

GATE VOLTAG E D.U.T.

+Vg

Fig. 18a - Test Circuit for Measurements of ILM, Eon, E

I

, t

, tr, t

rr

d(on)

d(off)

, t

f

off(diode)

, trr, Qrr,

DUT VOLTAGE
AND CURR ENT

Ipk

Ic

t2

Vce ie dt

Eon =

∫

t1

t2

Vcc

10% Ic

td(on)

Vce

90% Ic

5% Vce

tr

t1

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

, t

on

d(on)

r

Fig. 18b - Test Waveforms for Circuit of Fig. 18a,

Defining E

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, t

, t

off

d(off)

f

Vg

t0

t1

t2

Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit

8

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

GATE SIGNAL
DEVIC E UNDER TE S

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

Defining E

, trr, Qrr, I

rec

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rr

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D.U.T.

50 V

6000 µF

100 V

1000 V

L

V

C

0 - 480 V

R

L

=

480 V

4 x I

C

at 25 °C

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

CPV363M4UPbF

Vishay Semiconductors

1

Q1

3

Q2

618

71319

Q3D1

9

41016

D2

12

D3

D4

Q5

15

Q6

D5

D6Q4

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95066

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Document Number: 94486

DIMENSIONS in millimeters (inches)

IMS-2 Package Outline (13 Pins)

7.87 (0.310)

5.46 (0.215)

1.27 (0.050)

6.10 (0.240)

3.05 ± 0.38

(0.120 ± 0.015)

0.51 (0.020)

0.38 (0.015)

62.43 (2.458)

53.85 (2.120)

Ø 3.91 (0.154)

2 x

21.97 (0.865)

3.94 (0.155)

4.06 ± 0.51

(0.160 ± 0.020)

5.08 (0.200)
6 x

1.27 (0.050)
13 x

2.54 (0.100)
6 x

0.76 (0.030)
13 x

1 3 4 6 7 9 10 12 13 15 16 18 19171411258

Outline Dimensions

Vishay Semiconductors

IMS-2 (SIP)

Notes

(1)

Tolerance uless otherwise specified ± 0.254 mm (0.010")

(2)

Controlling dimension: inch

(3)

Terminal numbers are shown for reference only

Document Number: 95066 For technical questions, contact: [e-mail]
Revision: 30-Jul-07 1

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Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

1

Document Number: 91000