Vishay CPV363M4KPBF Data Sheet

IGBT SIP Module

(Short Circuit Rated Ultrafast IGBT)

IMS-2

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (1.94 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

V

(typical)

CE(on)

at I

= 6.0 A, 25 °C

C

6.7 A

125 °C

1.72 V

RMS

CPV363M4KPbF

Vishay High Power Products

FEATURES

• Short circuit rated ultrafast: Optimized for high speed over 5.0 kHz (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 µs at 125 °C, V

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay’s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

= 15 V

GE

®

soft ultrafast diodes

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Short circuit withstand time t

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage temperature range

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

CES

TC = 25 °C 11

C

T

= 100 °C 6.0

C

Repetitive rating; VGE = 20 V, pulse width

CM

LM

FM

SC

ISOL

T

, T

J

limited by maximum junction temperature See fig. 20

VCC = 80 % (V L = 10 µH, R See fig. 19

TC = 100 °C 6.1 A

F

GE

Any terminal to case, t = 1 minute 2500 V

TC = 25 °C 36

D

T

= 100 °C 14

C

Stg

), VGE = 20 V,

CES

= 22 Ω

G

600 V

22 A

10 µs

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

A

RMS

W

°C

lbf ⋅ in

(N ⋅ m)

Document Number: 94485 For technical questions, contact: ind-modules@vishay.com Revision: 01-Sep-08 1

www.vishay.com

CPV363M4KPbF

Vishay High Power Products

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown voltage ΔV

Collector to emitter saturation voltage V

(BR)CES

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.45 - V/°C

(BR)CES

CE(on)

(IGBT) - 3.5

thJC

(DIODE) - 5.5

thJC

(MODULE) 0.10 -

thCS

°C/WJunction to case, each DIODE, one DIODE in conduction R

20 - g

0.7 - oz.

VGE = 0 V, IC = 250 µA 600 - - V

IC = 6.0 A

= 15 V

V

= 11 A - 2.00 -

I

C

= 6.0 A, TJ = 150 °C

I

C

GE

See fig. 2, 5

- 1.72 2.10

-

1.60

-

V

Gate threshold voltage V

Temperature coeff. of threshold voltage ΔV

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs; single shot

GE(th)

fe

CES

GES

FM

/ΔT

(2)

VCE = VGE, IC = 250 µA

J

VCE = 100 V, IC = 12 A 3.0 6.0 - S

VGE = 0 V, VCE = 600 V

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

IC = 12 A

I

= 12 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

3.0 - 6.0

-- 13 -mV/°C

--

-1.41.7

250

µA

V

VGE = ± 20 V - - ± 100 nA

www.vishay.com For technical questions, contact: ind-modules@vishay.com

Document Number: 94485

2 Revision: 01-Sep-08

CPV363M4KPbF

IGBT SIP Module

Vishay High Power Products

(Short Circuit Rated

Ultrafast IGBT)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Short circuit withstand time t

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery during t

b

dI

(rec)M

ge

gc

d(on)

r

d(off)

f

on

off

ts

SC

d(on)

r

d(off)

f

ts

ies

oes

res

rr

g

IC = 6 A

= 400 V

V

CC

See fig. 8

TJ = 25 °C I

= 6.0 A, VCC = 480 V

C

V

= 15 V, RG = 23 Ω

GE

Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 18

VCC = 360 V, TJ = 125 °C V

= 15 V, RG = 23 Ω, V

GE

CPK

< 500 V

TJ = 150 °C I

= 6.0 A, VCC = 480 V

C

V

= 15 V, RG = 23 Ω

GE

Energy losses include “tail” and diode reverse recovery See fig. 10, 11, 18

VGE = 0 V V

= 30 V

CC

See fig. 7

ƒ = 1.0 MHz

TJ = 25 °C

T

= 125 °C - 80 120

J

TJ = 25 °C

T

= 125 °C - 5.6 10

J

TJ = 25 °C

rr

/dt

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 120 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 12 A

F

V

= 200 V

R

dI/dt = 200 A/µs

-6191

-7.411

nCGate to emitter charge (turn-on) Q

-2740

-55-

-24-

- 107 160

ns

-92140

-0.28-

-0.10-

mJTurn-off switching loss E

- 0.39 0.50

10 - - µs

-54-

-24-

- 161 -

ns

- 244 -

-0.60-mJ

- 740 -

- 100 -

pFOutput capacitance C

-9.3-

-4260

-3.56.0

-80180

- 180 -

ns

A

nC

A/µs

Document Number: 94485 For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Revision: 01-Sep-08 3

CPV363M4KPbF

Vishay High Power Products

12

10

8

6

4

LOAD CURRENT (A)

2

0

0.1 1 10 100

100

o

T = 25 C

J

T = 150 C

J

10

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

o

of Fundamental)

RMS

Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage

12

9

3.50

2.92

2.33

1.75

1.17

Total Output Power (kW)

0.58

0.00

V = 15V

GE

1

C

I , Collector-to-Emitter Current (A)

0.1 1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15 V

GE

20μs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

100

o

T = 150 C

J

10

o

T = 25 C

1

C

I , Collector-to-Emitter Current (A)

0.1 5 10 15

J

V = 50V

CC

5μs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

6

3

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs. Case Temperature

3.0

V = 15 V

GE

80 us PULSE WIDTH

I = A12

C

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A6

C

I = A3

C

°

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

www.vishay.com For technical questions, contact: ind-modules@vishay.com

Document Number: 94485

4 Revision: 01-Sep-08