Vishay CPV363M4KPBF Data Sheet

IGBT SIP Module

(Short Circuit Rated Ultrafast IGBT)

IMS-2

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (1.94 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

V

(typical)

CE(on)

at I

= 6.0 A, 25 °C

C

6.7 A

125 °C

1.72 V

RMS

CPV363M4KPbF

Vishay High Power Products

FEATURES

• Short circuit rated ultrafast: Optimized for high
speed over 5.0 kHz (see fig. 1 for current vs.
frequency curve), and short circuit rated to 10 µs
at 125 °C, V

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay’s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

= 15 V

GE

®

soft ultrafast diodes

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Short circuit withstand time t

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and
storage temperature range

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

CES

TC = 25 °C 11

C

T

= 100 °C 6.0

C

Repetitive rating; VGE = 20 V, pulse width

CM

LM

FM

SC

ISOL

T

, T

J

limited by maximum junction temperature
See fig. 20

VCC = 80 % (V
L = 10 µH, R
See fig. 19

TC = 100 °C 6.1 A

F

GE

Any terminal to case, t = 1 minute 2500 V

TC = 25 °C 36

D

T

= 100 °C 14

C

Stg

), VGE = 20 V,

CES

= 22 Ω

G

600 V

22 A

22 A

22 A

10 µs

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

A

RMS

W

°C

lbf ⋅ in

(N ⋅ m)

Document Number: 94485 For technical questions, contact: [e-mail]
Revision: 01-Sep-08 1

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CPV363M4KPbF

Vishay High Power Products

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown voltage ΔV

Collector to emitter saturation voltage V

(BR)CES

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.45 - V/°C

(BR)CES

CE(on)

(IGBT) - 3.5

thJC

(DIODE) - 5.5

thJC

(MODULE) 0.10 -

thCS

°C/WJunction to case, each DIODE, one DIODE in conduction R

20 - g

0.7 - oz.

VGE = 0 V, IC = 250 µA 600 - - V

IC = 6.0 A

= 15 V

V

= 11 A - 2.00 -

I

C

= 6.0 A, TJ = 150 °C

I

C

GE

See fig. 2, 5

- 1.72 2.10

-

1.60

-

V

Gate threshold voltage V

Temperature coeff. of threshold voltage ΔV

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs; single shot

GE(th)

GE(th)

fe

CES

GES

FM

/ΔT

(2)

VCE = VGE, IC = 250 µA

J

VCE = 100 V, IC = 12 A 3.0 6.0 - S

VGE = 0 V, VCE = 600 V

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

IC = 12 A

I

= 12 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

3.0 - 6.0

-- 13 -mV/°C

--

-1.41.7

250

µA

V

VGE = ± 20 V - - ± 100 nA

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Document Number: 94485

2 Revision: 01-Sep-08

CPV363M4KPbF

IGBT SIP Module

Vishay High Power Products

(Short Circuit Rated

Ultrafast IGBT)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Short circuit withstand time t

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery
during t

b

dI

(rec)M

ge

gc

d(on)

r

d(off)

f

on

off

ts

SC

d(on)

r

d(off)

f

ts

ies

oes

res

rr

rr

g

IC = 6 A

= 400 V

V

CC

See fig. 8

TJ = 25 °C
I

= 6.0 A, VCC = 480 V

C

V

= 15 V, RG = 23 Ω

GE

Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 18

VCC = 360 V, TJ = 125 °C
V

= 15 V, RG = 23 Ω, V

GE

CPK

< 500 V

TJ = 150 °C
I

= 6.0 A, VCC = 480 V

C

V

= 15 V, RG = 23 Ω

GE

Energy losses include “tail” and
diode reverse recovery
See fig. 10, 11, 18

VGE = 0 V
V

= 30 V

CC

See fig. 7

ƒ = 1.0 MHz

TJ = 25 °C

T

= 125 °C - 80 120

J

TJ = 25 °C

T

= 125 °C - 5.6 10

J

TJ = 25 °C

rr

/dt

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 120 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 12 A

F

V

= 200 V

R

dI/dt = 200 A/µs

-6191

-7.411

nCGate to emitter charge (turn-on) Q

-2740

-55-

-24-

- 107 160

ns

-92140

-0.28-

-0.10-

mJTurn-off switching loss E

- 0.39 0.50

10 - - µs

-54-

-24-

- 161 -

ns

- 244 -

-0.60-mJ

- 740 -

- 100 -

pFOutput capacitance C

-9.3-

-4260

-3.56.0

-80180

- 180 -

ns

A

nC

A/µs

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Revision: 01-Sep-08 3

CPV363M4KPbF

Vishay High Power Products

12

10

8

6

4

LOAD CURRENT (A)

2

0

0.1 1 10 100

100

o

T = 25 C

J

T = 150 C

J

10

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

o

of Fundamental)

RMS

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage

12

9

3.50

2.92

2.33

1.75

1.17

Total Output Power (kW)

0.58

0.00

V = 15V

GE

1

C

I , Collector-to-Emitter Current (A)

0.1
1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15 V

GE

20μs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

100

o

T = 150 C

J

10

o

T = 25 C

1

C

I , Collector-to-Emitter Current (A)

0.1
5 10 15

J

V = 50V

CC

5μs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

6

3

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs. Case Temperature

3.0

V = 15 V

GE

80 us PULSE WIDTH

I = A12

C

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A6

C

I = A3

C

°

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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Document Number: 94485

4 Revision: 01-Sep-08

CPV363M4KPbF

1500

1200

IGBT SIP Module

Vishay High Power Products

(Short Circuit Rated

Ultrafast IGBT)

10

D = 0.50

thJC

1

0.20

0.10

0.05

0.02

0.1

0.01

SI NGLE PULSE

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

1.0

0.8

V = 480V

CC

V = 15V

GE

T = 25 C

J

I = 6.0A

C

V

=

0V,

GE

C

ies ge gc , ce

C

res gc

C

oes ce g c

f = 1MHz

=

C

+ C

=

C

=

C

+ C

C SHORTED

P

DM

t

1

t

2

12

DM

thJC

C

°

C

900

600

ies

C, Capacitance (pF)

300

0

1 10 100

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage

20

V = 400V

CC

I = 6.0A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0.6

0.4

0.2

Total Switching Losses (mJ)

0.0
0 10 20 30 40 50

R , Gate Resistance (Ω)

R

G

Fig. 9 - Typical Switching Losses vs. Gate Resistance

10

Total Switching Losses (mJ)

R = 23
V = 15V
V = 480V

1

GE
CC

10Ω

Ω

G

I = 12 A

C

I = 6 A

C

I = 3 A

C

0

0 20 40 60 80

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

°

Fig. 10 - Typical Switching Losses vs. Junction Temperature

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CPV363M4KPbF

A

Vishay High Power Products

1.5

1.2

0.9

0.6

0.3

Total Switching Losses (mJ)

0.0
0 3 6 9 12 15

Ω

R = 23

G

°

T = 150 C

J

480V

V = 0V

CC

V = 15V

GE

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

100

100

V = 20V

GE

T = 125°C

J

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 1000

SAFE OP ERATING AREA

V , Colle ctor-to -Emitter Volta ge (V)

CE

Fig. 12 - Turn-Off SOA

F

T = 150°C

J

T = 125°C

J

10

T = 25°C

J

Instantaneous Forward Current - I (A)

1

0.4 0.8 1.2 1.6 2.0 2.4

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

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Document Number: 94485

6 Revision: 01-Sep-08

CPV363M4KPbF

(Short Circuit Rated

160

V = 200V

R

T = 125°C

J

T = 25°C

J

120

I = 24A

F

I = 12A

F

80

rr

t - (ns)

40

0

di /dt - (A/µs)

f

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

I = 6.0A

F

IGBT SIP Module

Ultrafast IGBT)

0001001

Vishay High Power Products

600

V = 200V

R

T = 125°C

J

T = 25 °C

J

400

I = 24A

RR

Q - (nC)

200

I = 6.0A

F

0

I = 12A

F

di /dt - (A/µs)

f

Fig. 16 - Typical Stored Charge vs. dI

F

0001001

/dt

F

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 24A

F

I = 12A

F

di /dt - (A/µs)

f

IRRM

I - (A)

10

1

I = 6.0A

F

Fig. 15 - Typical Recovery Current vs. dI

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

1000

100

di(rec)M/dt - (A/µs)

0001001

/dt

F

10

Fig. 17 - Typical dI

I = 6.0A

F

I = 24A

F

di /dt - (A/µs)

f

(rec)M

I = 12A

F

/dt vs dIF/dt

0001001

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CPV363M4KPbF

Vishay High Power Products

Same type

device as

D.U.T.

80 %

of V

CE

Fig. 18a - Test Circuit for Measurements of ILM, Eon, E

+Vge

I

, t

rr

430 µF

d(on)

90% Vge

, tr, t

d(off)

, t

D.U.T.

f

IGBT SIP Module

(Short Circuit Rated

Ultrafast IGBT)

, trr, Qrr,

off(diode)

GATE VOLTAGE D.U.T.

Vcc

10% +Vg

10% Ic

td(on)

Vce

tr

t1

90% Ic

5% Vce

+Vg

DUT VOLTAGE
AND CURRE NT

Ipk

Ic

t2

Vce ie dt

Eon =

Vce Ic dt

∫

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

Ic

, t

, t

on

d(on)

r

trr

Qrr =

∫

trr

id dt

Ic dt

tx

Vce

10% Vce

Ic

td(off)

t1

90% Ic

Ic

5% Ic

tf

t1+5μS

Vce ic dt

Eoff =

Vce Ic dt

∫

t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

, t

off

d(off)

f

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Vg

GATE SIGNAL
DEVICE UNDER TES

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

tx
10% Vcc

Vpk

DIODE REVERSE
RECOVE RY ENERG Y

Irr

Defining E

T

t3

, trr, Qrr, I

rec

10% Irr

DIODE RECOV ERY
WAVEFORMS

t4

Erec =

Vd id dt

Vd Ic dt

∫

t3

t4

rr

Vcc

t0

t1

t2

Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit

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Document Number: 94485

8 Revision: 01-Sep-08

CPV363M4KPbF

1000 V

50 V

6000 µF

100 V

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

IGBT SIP Module

Vishay High Power Products

(Short Circuit Rated

Ultrafast IGBT)

L

V

C

D.U.T.

0 - 480 V

480 V

=

R

L

at 25 °C

4 x I

C

1

Q1

3

Q2

618

71319

Q3D1

9

41016

D2

12

D3

D4

Q5

15

Q6

D5

D6Q4

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95066

Document Number: 94485 For technical questions, contact: [e-mail]

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Revision: 01-Sep-08 9

DIMENSIONS in millimeters (inches)

IMS-2 Package Outline (13 Pins)

7.87 (0.310)

5.46 (0.215)

1.27 (0.050)

6.10 (0.240)

3.05 ± 0.38

(0.120 ± 0.015)

0.51 (0.020)

0.38 (0.015)

62.43 (2.458)

53.85 (2.120)

Ø 3.91 (0.154)

2 x

21.97 (0.865)

3.94 (0.155)

4.06 ± 0.51

(0.160 ± 0.020)

5.08 (0.200)
6 x

1.27 (0.050)
13 x

2.54 (0.100)
6 x

0.76 (0.030)
13 x

1 3 4 6 7 9 10 12 13 15 16 18 19171411258

Outline Dimensions

Vishay Semiconductors

IMS-2 (SIP)

Notes

(1)

Tolerance uless otherwise specified ± 0.254 mm (0.010")

(2)

Controlling dimension: inch

(3)

Terminal numbers are shown for reference only

Document Number: 95066 For technical questions, contact: [e-mail]
Revision: 30-Jul-07 1

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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