Vishay CPV362M4UPBF Data Sheet

IMS-2

IGBT SIP Module

(Fast IGBT)

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

• Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve

• Totally lead (Pb)-free

• Designed and qualified for industrial level

CPV362M4UPbF

Vishay High Power Products

®

soft ultrafast diodes

RoHS

COMPLIANT

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (3.1 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

at I

= 3.9 A, 25 °C

C

4.6 A

125 °C

1.7 V

RMS

DESCRIPTION

The IGBT technology is the key to Vishay´s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage temperature range T

Soldering temperature 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

), VGE = 20 V, L = 10 µH, RG = 50 Ω (see fig.19)

GES

CM

LM

J

CES

C

F

FM

GE

ISOL

, T

TC = 25 °C 7.2

= 100 °C 3.9

T

C

(1)

(2)

TC = 100 °C 3.4

1 minute, any terminal to case 2500 V

TC = 25 °C 23

D

T

= 100 °C 9.1

C

Stg

600 V

22

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

lbf · in

(N · m)

A

RMS

W

°C

Document Number: 94483 For technical questions, contact: ind-modules@vishay.com Revision: 01-Sep-08 1

www.vishay.com

CPV362M4UPbF

Vishay High Power Products

IGBT SIP Module

(Fast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coefficient of breakdown voltage

ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emittler leakage current I

Notes

(1)

Pulse width ≤ 80 µs; duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs, single shot

(VB)CES

(BR)CES

ΔV

CE(on)

GE(th)

fe

CES

FM

GES

/ΔT

(2)

VGE = 0 V, IC = 250 µA 600 - - V

/ΔTJVGE = 0 V, IC = 1 mA - 0.63 - V/°C

IC = 3.9 A

I

VCE = VGE, IC = 250 µA

J

VCE = 100 V, IC = 6.5 A 1.4 4.3 - S

VGE = 0 V, VCE = 600 V - - 250

V

IC = 8.0 A

I

VGE = ± 20 V - - ± 100 nA

(IGBT) - 5.5

thJC

(DIODE) - 9.0

thJC

(MODULE) 0.1 -

thCS

20 g

0.7 oz.

- 1.70 2.2

= 15 V

V

= 7.2 A - 1.95 -

C

= 3.9 A, TJ = 150 °C - 1.70 -

C

GE

See fig. 2, 5

3.0 - 6.0

-- 11-mV/°C

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

= 8.0 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

-1.41.7

°C/WJunction to case, each DIODE, one DIODE on conduction R

V

µA

V

www.vishay.com For technical questions, contact: ind-modules@vishay.com

Document Number: 94483

2 Revision: 01-Sep-08

CPV362M4UPbF

IGBT SIP Module

Vishay High Power Products

(Fast IGBT)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) O

Gate to collector charge (turn-on) O

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery during t

b

dI

(rec)M

GE

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

ies

oes

res

rr

g

IC = 3.9 A V

= 400 V

CC

= 15 V

V

GE

TJ = 25 °C I

= 3.9 A, V

C

= 15 V, RG = 50 Ω

V

GE

CC

= 480 V

Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18

TJ = 150 °C

= 3.9 A, VCC = 480 V

I

C

V

= 15 V, RG = 50 Ω

GE

Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18

VGE = 0 V V

= 30 V

CC

ƒ = 1.0 MHz

rr

TJ = 25 °C

T

= 125 °C - 55 90

J

TJ = 25 °C

T

= 125 °C - 4.5 8.0

J

TJ = 25 °C

T

= 125 °C - 124 360

J

= 25 °C

T

J

/dt

T

= 125 °C - 210 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

See fig. 7

I

= 8.0 A

F

V

= 200 V

R

dI/dt = 200 A/µs

-3147

-5.07.5

nCGate to emitter charge (turn-on) O

-1320

-45-

-22-

- 100 160

ns

- 120 180

-0.13-

-0.07-

mJTurn-off switching loss E

- 0.20 0.3

-42-

-22-

- 120 -

ns

- 250 -

-0.35- mJ

- 530 -

-39-

pFOutput capacitance C

-7.4-

-3755

-3.55.0

- 65 138

- 240 -

ns

A

nC

A/µs

Document Number: 94483 For technical questions, contact: ind-modules@vishay.com

www.vishay.com

Revision: 01-Sep-08 3

CPV362M4UPbF

A

Vishay High Power Products

8

7

6

5

4

3

LOAD CURRENT (A)

2

1

0

0.1 1 10 100

100

IGBT SIP Module

(Fast IGBT)

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

8

6

Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage

2.34

2.05

1.76

1.46

1.17

0.88

0.59

Total Output Power (kW)

0.29

0.00

10

5

T = 150°C

J

1

C

I , Collector-to-Emitter Current (A)

0.1

V , Collector-to-Emitter Voltage (V)

CE

Fig. 2 - Typical Output Characteristics

T = 25°C

J

V = 15V

GE

20μs PULSE WIDTH

0111.0

3

2

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs.

Case Temperature

100

10

T = 150°C

J

T = 25°C

1

C

I , Collector-to-Emitter Current (A)

0.1 46810

V , Gate-to-Emitter Voltage (V)

GE

J

V = 10V

CC

5μs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

3.0

V = 15V

GE

80 us PULSE WIDTH

I = A7.8

C

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A3.9

C

I = A1.95

C

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

°

www.vishay.com For technical questions, contact: ind-modules@vishay.com 4 Revision: 01-Sep-08

Document Number: 94483