Vishay CPV362M4UPBF Data Sheet

IMS-2

IGBT SIP Module

(Fast IGBT)

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED

• Optimized for high speed over 5 kHz
See fig. 1 for current vs. frequency curve

• Totally lead (Pb)-free

• Designed and qualified for industrial level

CPV362M4UPbF

Vishay High Power Products

®

soft ultrafast diodes

RoHS

COMPLIANT

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (3.1 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

at I

= 3.9 A, 25 °C

C

4.6 A

125 °C

1.7 V

RMS

DESCRIPTION

The IGBT technology is the key to Vishay´s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage temperature range T

Soldering temperature 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

), VGE = 20 V, L = 10 µH, RG = 50 Ω (see fig.19)

GES

CM

LM

J

CES

C

F

FM

GE

ISOL

, T

TC = 25 °C 7.2

= 100 °C 3.9

T

C

(1)

(2)

TC = 100 °C 3.4

1 minute, any terminal to case 2500 V

TC = 25 °C 23

D

T

= 100 °C 9.1

C

Stg

600 V

22

22

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

lbf · in

(N · m)

A

RMS

W

°C

Document Number: 94483 For technical questions, contact: [e-mail]
Revision: 01-Sep-08 1

www.vishay.com

CPV362M4UPbF

Vishay High Power Products

IGBT SIP Module

(Fast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coefficient of
breakdown voltage

ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emittler leakage current I

Notes

(1)

Pulse width ≤ 80 µs; duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs, single shot

(VB)CES

(BR)CES

ΔV

CE(on)

GE(th)

GE(th)

fe

CES

FM

GES

/ΔT

(2)

VGE = 0 V, IC = 250 µA 600 - - V

/ΔTJVGE = 0 V, IC = 1 mA - 0.63 - V/°C

IC = 3.9 A

I

I

VCE = VGE, IC = 250 µA

J

VCE = 100 V, IC = 6.5 A 1.4 4.3 - S

VGE = 0 V, VCE = 600 V - - 250

V

IC = 8.0 A

I

VGE = ± 20 V - - ± 100 nA

(IGBT) - 5.5

thJC

(DIODE) - 9.0

thJC

(MODULE) 0.1 -

thCS

20 g

0.7 oz.

- 1.70 2.2

= 15 V

V

= 7.2 A - 1.95 -

C

= 3.9 A, TJ = 150 °C - 1.70 -

C

GE

See fig. 2, 5

3.0 - 6.0

-- 11-mV/°C

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

= 8.0 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

-1.41.7

°C/WJunction to case, each DIODE, one DIODE on conduction R

V

µA

V

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Document Number: 94483

2 Revision: 01-Sep-08

CPV362M4UPbF

IGBT SIP Module

Vishay High Power Products

(Fast IGBT)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) O

Gate to collector charge (turn-on) O

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall of
recovery during t

b

dI

(rec)M

GE

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

ies

oes

res

rr

rr

g

IC = 3.9 A
V

= 400 V

CC

= 15 V

V

GE

TJ = 25 °C
I

= 3.9 A, V

C

= 15 V, RG = 50 Ω

V

GE

CC

= 480 V

Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18

TJ = 150 °C

= 3.9 A, VCC = 480 V

I

C

V

= 15 V, RG = 50 Ω

GE

Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18

VGE = 0 V
V

= 30 V

CC

ƒ = 1.0 MHz

rr

TJ = 25 °C

T

= 125 °C - 55 90

J

TJ = 25 °C

T

= 125 °C - 4.5 8.0

J

TJ = 25 °C

T

= 125 °C - 124 360

J

= 25 °C

T

J

/dt

T

= 125 °C - 210 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

See fig. 7

I

= 8.0 A

F

V

= 200 V

R

dI/dt = 200 A/µs

-3147

-5.07.5

nCGate to emitter charge (turn-on) O

-1320

-45-

-22-

- 100 160

ns

- 120 180

-0.13-

-0.07-

mJTurn-off switching loss E

- 0.20 0.3

-42-

-22-

- 120 -

ns

- 250 -

-0.35- mJ

- 530 -

-39-

pFOutput capacitance C

-7.4-

-3755

-3.55.0

- 65 138

- 240 -

ns

A

nC

A/µs

Document Number: 94483 For technical questions, contact: [e-mail]

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Revision: 01-Sep-08 3

CPV362M4UPbF

A

A

Vishay High Power Products

8

7

6

5

4

3

LOAD CURRENT (A)

2

1

0

0.1 1 10 100

100

IGBT SIP Module

(Fast IGBT)

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

8

6

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage

2.34

2.05

1.76

1.46

1.17

0.88

0.59

Total Output Power (kW)

0.29

0.00

10

5

T = 150°C

J

1

C

I , Collector-to-Emitter Current (A)

0.1

V , Collector-to-Emitter Voltage (V)

CE

Fig. 2 - Typical Output Characteristics

T = 25°C

J

V = 15V

GE

20μs PULSE WIDTH

0111.0

3

2

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs.

Case Temperature

100

10

T = 150°C

J

T = 25°C

1

C

I , Collector-to-Emitter Current (A)

0.1
46810

V , Gate-to-Emitter Voltage (V)

GE

J

V = 10V

CC

5μs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

3.0

V = 15V

GE

80 us PULSE WIDTH

I = A7.8

C

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A3.9

C

I = A1.95

C

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

°

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4 Revision: 01-Sep-08

Document Number: 94483

A

CPV362M4UPbF

IGBT SIP Module

Vishay High Power Products

(Fast IGBT)

10

D = 0.50

thJC

0.20

1

0.10

0.05

0.02

0.01

0.1

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

1000

800

C

ies

S INGLE PU LSE
(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J

0.20

V = 480V

CC

V = 15V

GE

T = 25 C

J

I = 3.9A

0.19

C

2

1

DM

thJC

°

P

DM

t

1

C

t

2

C, Capacitance (pF)

V , Gate-to-Emitter Voltage (V)

GE

600

C

400

200

oes

C

res

0

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector to Emitter Voltage

20

V = 400V

CC

I = 3.9A

C

16

12

8

4

0.18

0.17

0.16

Total Switching Losses (mJ)

001011

0.15
0 10 20 30 40 50

R , Gate Resistance

G

(Ω)

Fig. 9 - Typical Switching Losses vs. Gate Resistance

1

R = 50
V = 15V
V = 480V

G
GE
CC

Ω

I = A

7.8

C

I = A

3.9

C

I = A

1.95

C

Total Switching Losses (mJ)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

Fig. 10 - Typical Switching Losses vs. Junction Temperature

J

°

Gate to Emitter Voltage

Document Number: 94483 For technical questions, contact: [e-mail]
Revision: 01-Sep-08 5

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CPV362M4UPbF

Vishay High Power Products

0.8

R = 50
T = 150 C
V = 480V
V = 15V

0.6

0.5

0.3

0.2

Total Switching Losses (mJ)

0.0
0 2 4 6 8

Ω

G

°

J
CC
GE

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

IGBT SIP Module

(Fast IGBT)

100

100

V = 20V

GE

T = 125 C

10

1

C

I , Collector-to-Emitter Current (A)

0.1
1 10 100 1000

o

J

SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

F

10

T = 150°C

J

T = 125°C

J

T = 25°C

1

J

Instantaneous Forward Current - I (A)

0.1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

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Document Number: 94483

6 Revision: 01-Sep-08

CPV362M4UPbF

IGBT SIP Module

100

V = 200V

R

T = 125°C

J

T = 25°C

J

80

I = 16A

F

60

rr

t - (ns)

40

I = 4.0A

F

20

0

di /dt - (A/μs)

f

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

I = 8.0A

F

(Fast IGBT)

0001001

Vishay High Power Products

500

V = 200V

R

T = 125°C

J

T = 25°C

J

400

300

I = 16A

F

RR

Q - (nC)

200

I = 8.0A

F

100

0

di /dt - (A/μs)

Fig. 16 - Typical Stored Charge vs. dI

f

I = 4.0A

F

/dt

F

0001001

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 16A

10

IRRM

I - (A)

1

I = 8.0A

F

F

di /dt - (A/μs)

f

Fig. 15 - Typical Recovery Current vs. dI

I = 4.0A

F

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 4.0A

1000

di(rec)M/dt - (A/μs)

0001001

/dt

F

100

Fig. 17 - Typical dI

F

I = 8.0A

F

I = 16A

F

di /dt - (A/μs)

f

(rec)M

0001001

/dt vs. dIF/dt

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Revision: 01-Sep-08 7

CPV362M4UPbF

Vishay High Power Products

Same type

device as

D.U.T.

80 %

of V

CE

Fig. 18a - Test Circuit for Measurement of

I

, Eon, E

LM

+Vge

off(diode)

430 µF

, trr, Qrr, Irr, t

90% Vge

d(on)

D.U.T.

, tr, t

d(off)

IGBT SIP Module

(Fast IGBT)

, t

f

GATE VOLTAGE D.U.T.

Vcc

10% +Vg

10% Ic

td(on)

Vce

tr

t1

90% Ic

5% Vce

+Vg

DUT VOLTAGE
AND CURRE NT

Ipk

Ic

t2

Vce ie dt

Eon =

Vce Ie dt

∫

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

Ic

, t

, t

on

d(on)

r

trr

Qrr =

∫

trr

id dt

Id dt

tx

Vce

10% Vce

Ic

td(off)

t1

90% Ic

Ic

tf

5% Ic

t1+5μS

Vce ic dt

Eoff =

Vce Ic dt

∫

t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

, t

off

d(off)

f

tx
10% Vcc

Vpk

DIODE REVERSE
RECOVE RY ENERG Y

Irr

t3

10% Irr

DIODE RECOV ERY
WAVEFORMS

t4

Erec =

Vd Id dt

∫

t3

t4

Vcc

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

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Document Number: 94483

8 Revision: 01-Sep-08

CPV362M4UPbF

50V

6000μF
100V

1000V

IGBT SIP Module

(Fast IGBT)

Vg

GATE SIGNAL
DEVICE UNDER TES

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

t0

Fig. 18e - Macro Waveforms for Fig. 18a´s Test Circuit

L

V *

c

D.U.T.

t1

t2

0 - 480V

Vishay High Power Products

T

480V

RL=

4 X I

@25°C

C

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

1

Q1

3

Q2

618

71319

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95066

Q3D1

9

41016

D2

12

D3

D4

Q5

15

Q6

D5

D6Q4

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Revision: 01-Sep-08 9

DIMENSIONS in millimeters (inches)

IMS-2 Package Outline (13 Pins)

7.87 (0.310)

5.46 (0.215)

1.27 (0.050)

6.10 (0.240)

3.05 ± 0.38

(0.120 ± 0.015)

0.51 (0.020)

0.38 (0.015)

62.43 (2.458)

53.85 (2.120)

Ø 3.91 (0.154)

2 x

21.97 (0.865)

3.94 (0.155)

4.06 ± 0.51

(0.160 ± 0.020)

5.08 (0.200)
6 x

1.27 (0.050)
13 x

2.54 (0.100)
6 x

0.76 (0.030)
13 x

1 3 4 6 7 9 10 12 13 15 16 18 19171411258

Outline Dimensions

Vishay Semiconductors

IMS-2 (SIP)

Notes

(1)

Tolerance uless otherwise specified ± 0.254 mm (0.010")

(2)

Controlling dimension: inch

(3)

Terminal numbers are shown for reference only

Document Number: 95066 For technical questions, contact: [e-mail]
Revision: 30-Jul-07 1

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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