Vishay CPV362M4U Data Sheet

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IMS-2

IGBT SIP Module

(Fast IGBT)

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (3.1 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

at I

= 3.9 A, 25 °C

C

Package SIP

Circuit Three Phase Inverter

4.6 A

125 °C

1.7 V

RMS

CPV362M4UPbF

Vishay Semiconductors

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

•HEXFRED® soft ultrafast diodes

• Optimized for high speed over 5 kHz
See fig. 1 for current vs. frequency curve

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The IGBT technology is the key to Vishay´s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage temperature range T

Soldering temperature 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

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), VGE = 20 V, L = 10 μH, RG = 50  (see fig.19)

GES

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CM

LM

J

CES

FM

ISOL

, T

C

F

GE

TC = 25 °C 7.2

= 100 °C 3.9

T

C

(1)

(2)

TC = 100 °C 3.4

1 minute, any terminal to case 2500 V

TC = 25 °C 23

D

T

= 100 °C 9.1

C

Stg

1

, [e-mail], [e-mail]

600 V

22

22

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

Document Number: 94483

lbf · in

(N · m)

A

RMS

W

°C

CPV362M4UPbF

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

(IGBT) - 5.5

thJC

(DIODE) - 9.0

thJC

(MODULE) 0.1 -

thCS

20 g

0.7 oz.

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coefficient of
breakdown voltage

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of 
threshold voltage

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emittler leakage current I

Notes

(3)

Pulse width  80 μs; duty factor  0.1 %

(4)

Pulse width 5.0 μs, single shot

V

V

(VB)CES

(BR)CES

CE(on)

GE(th)

GE(th)

fe

CES

FM

GES

/T

(2)

VGE = 0 V, IC = 250 μA 600 - - V

/TJVGE = 0 V, IC = 1 mA - 0.63 - V/°C

IC = 3.9 A

= 15 V

V

I

= 7.2 A - 1.95 -

C

= 3.9 A, TJ = 150 °C - 1.70 -

I

C

GE

See fig. 2, 5

VCE = VGE, IC = 250 μA

J

VCE = 100 V, IC = 6.5 A 1.4 4.3 - S

VGE = 0 V, VCE = 600 V - - 250

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

IC = 8.0 A

I

= 8.0 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

VGE = ± 20 V - - ± 100 nA

Vishay Semiconductors

°C/WJunction to case, each DIODE, one DIODE on conduction R

- 1.70 2.2

3.0 - 6.0

-- 11-mV/°C

-1.41.7

V

μA

V

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CPV362M4UPbF

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) O

Gate to collector charge (turn-on) O

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall of 
recovery during t

b

dI

d(on)

d(off)

d(on)

d(off)

oes

(rec)M

g

IC = 3.9 A
V

= 400 V

GE

gc

r

f

on

off

ts

CC

V

= 15 V

GE

TJ = 25 °C
I

= 3.9 A, V

C

V

= 15 V, RG = 50 

GE

Energy losses include “tail” and diode

= 480 V

CC

reverse recovery
See fig. 9, 10, 11, 18

TJ = 150 °C

r

I

= 3.9 A, VCC = 480 V

C

V

= 15 V, RG = 50 

GE

Energy losses include “tail” and diode
reverse recovery

f

See fig. 9, 10, 11, 18

ts

ies

VGE = 0 V
V

= 30 V

CC

= 1.0 MHz

res

TJ = 25 °C

rr

T

= 125 °C - 55 90

J

TJ = 25 °C

rr

T

= 125 °C - 4.5 8.0

J

TJ = 25 °C

rr

T

= 125 °C - 124 360

J

= 25 °C

T

J

/dt

T

= 125 °C - 210 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

See fig. 7

I

= 8.0 A

F

V

= 200 V

R

dI/dt = 200
A/μs

Vishay Semiconductors

-3147

-5.07.5

-1320

-45-

-22-

- 100 160

- 120 180

-0.13-

-0.07-

- 0.20 0.3

-42-

-22-

- 120 -

- 250 -

-0.35- mJ

- 530 -

-39-

-7.4-

-3755

-3.55.0

- 65 138

- 240 -

nCGate to emitter charge (turn-on) O

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

ns

A

nC

A/μs

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www.vishay.com

0.1 1 10 100

0

1

2

3

4

5

6

7

8

f, Frequency (KHz)

LOAD CURRENT (A)

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage

0.00

0.29

0.59

0.88

1.17

1.46

1.76

Total Output Power (kW)

2.05

2.34

A

0.1

1

10

100

46810

C

I , Collector-to-Emitter Current (A)

GE

T = 25°C

T = 150°C

J

J

V , Gate-to-Emitter Voltage (V)

A

V = 10V
5μs PULSE WIDTH

CC

-60 -40 -20 0 20 40 60 80 100 120 140 160

1.0

2.0

3.0

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

J

°

CE

V = 15V
80 us PULSE WIDTH

GE

I = A1.95

C

I = A3.9

C

I = A7.8

C

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

CPV362M4UPbF

Vishay Semiconductors

100

10

T = 150°C

J

1

C

I , Collector-to-Emitter Current (A)

0.1

V , Collector-to-Emitter Voltage (V)

CE

T = 25°C

V = 15V

GE

20μs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

8

6

5

J

3

2

Maximum DC Collector Current(A)

0111.0

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 3 - Typical Transfer Characteristics

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4

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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Document Number: 94483

CPV362M4UPbF

A

0 10 20 30 40

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

G

GE

V = 400V

I = 3.9A

CC
C

0 10 20 30 40 50

0.15

0.16

0.17

0.18

0.19

0.20

R , Gate Resistance

Total Switching Losses (mJ)

G

V = 480V
V = 15V
T = 25 C

I = 3.9A

CC

GE
J
C

°

(Ω)

www.vishay.com

10

D = 0.50

thJC

Thermal Response (Z )

0.20

1

0.10

0.05

0.02

0.01

0.1

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

S INGLE PU LSE
(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

Vishay Semiconductors

P

DM

t

1

t

2

2

1

DM

J

thJC

C

1000

800

600

400

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C, Capacitance (pF)

C

200

res

0

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector to Emitter Voltage

001011

Fig. 9 - Typical Switching Losses vs. Gate Resistance

1

R = 50
V = 15V
V = 480V

G
GE
CC

Ω

I = A

7.8

C

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Fig. 8 - Typical Gate Charge vs.

Gate to Emitter Voltage

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Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

Fig. 10 - Typical Switching Losses vs. Junction Temperature

5

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I = A

3.9

C

I = A

1.95

C

°

Document Number: 94483

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0.1

1

10

100

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

FM

F

Instantaneous Forward Current - I (A)

Forward Voltage Drop - V (V)

T = 150°C

T = 125°C

T = 25°C

J

J

J

CPV362M4UPbF

Vishay Semiconductors

0.8

R = 50
T = 150 C
V = 480V
V = 15V

0.6

0.5

0.3

0.2

Total Switching Losses (mJ)

0.0
0 2 4 6 8

Ω

G
J
CC
GE

°

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

100

V = 20V

GE

T = 125 C

10

1

C

I , Collector-to-Emitter Current (A)

0.1
1 10 100 1000

o

J

SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

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Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

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0

20

40

60

80

100

0001001

f

di /dt - (A/μs)

t - (ns)

rr

I = 16A

I = 8.0A

I = 4.0A

F

F

F

V = 200V
T = 125°C
T = 25°C

R
J
J

1

10

100

0001001

f

di /dt - (A/μs)

I - (A)

IRRM

I = 16A

I = 8.0A

I = 4.0A

F

F

F

V = 200V
T = 125°C
T = 25°C

R
J
J

0

100

200

300

400

500

0001001

f

di /dt - (A/μs)

RR

Q - (nC)

I = 16A

I = 8.0A

I = 4.0A

F

F

F

V = 200V
T = 125°C
T = 25°C

R
J
J

100

1000

10000

0001001

f

di /dt - (A/μs)

di(rec)M/dt - (A/μs)

I = 16A

I = 8.0A

I = 4.0A

F

F

F

V = 200V
T = 125°C
T = 25°C

R
J
J

CPV362M4UPbF

Vishay Semiconductors

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

Fig. 15 - Typical Recovery Current vs. dI

/dt

F

Fig. 16 - Typical Stored Charge vs. dI

Fig. 17 - Typical dI

/dt vs. dIF/dt

(rec)M

/dt

F

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Same type

device as

D.U.T.

D.U.T.

430 µF

80 %

of V

CE

t1

Ic

Vce

t1

t2

90% Ic

td(off)

tf

Ic

5% Ic

t1+5μS

Vce ic dt

90% Vge

+Vge

∫

Eoff =

Vce Ic dt

10% Vce

DIODE REVERSE
RECOVE RY ENERG Y

tx

∫

Erec =

t4

t3

t4

t3

DIODE RECOV ERY
WAVEFORMS

Ic

Vpk

10% Vcc

Irr

10% Irr

Vcc

trr

∫

Qrr =

trr

tx

id dt

Vd Id dt

Id dt

Vg

GATE SIGNAL
DEVICE UNDER TES

T

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

t0

t1

t2

10% +Vg

CPV362M4UPbF

Vishay Semiconductors

GATE VOLTAGE D.U.T.

+Vg

Fig. 18a - Test Circuit for Measurement of

I

, Eon, E

LM

off(diode)

, trr, Qrr, Irr, t

d(on)

, tr, t

d(off)

DUT VOLTAGE
AND CURRE NT

Ipk

Ic

t2

Vce ie dt

Eon =

Vce Ie dt

∫

t1

t2

Vcc

10% Ic

td(on)

Vce

90% Ic

5% Vce

tr

t1

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

, t

f

Defining E

, t

, t

on

d(on)

r

Fig. 18b - Test Waveforms for Circuit of Fig. 18a,

Defining E

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, t

, t

off

d(off)

f

Fig. 18e - Macro Waveforms for Fig. 18a´s Test Circuit

8

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

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CPV362M4UPbF

Vishay Semiconductors

1000V

50V

6000μF
100V

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

L

V *

c

Q1

3

Q2

618

D.U.T.

0 - 480V

1

Q3D1

9

41016

D2

12

71319

D3

D4

Q5

15

Q6

D5

D6Q4

RL=

4 X I

480V

@25°C

C

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95066

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DIMENSIONS in millimeters (inches)

IMS-2 Package Outline (13 Pins)

7.87 (0.310)

5.46 (0.215)

1.27 (0.050)

6.10 (0.240)

3.05 ± 0.38

(0.120 ± 0.015)

0.51 (0.020)

0.38 (0.015)

62.43 (2.458)

53.85 (2.120)

Ø 3.91 (0.154)

2 x

21.97 (0.865)

3.94 (0.155)

4.06 ± 0.51

(0.160 ± 0.020)

5.08 (0.200)
6 x

1.27 (0.050)
13 x

2.54 (0.100)
6 x

0.76 (0.030)
13 x

1 3 4 6 7 9 10 12 13 15 16 18 19171411258

Outline Dimensions

Vishay Semiconductors

IMS-2 (SIP)

Notes

(1)

Tolerance uless otherwise specified ± 0.254 mm (0.010")

(2)

Controlling dimension: inch

(3)

Terminal numbers are shown for reference only

Document Number: 95066 For technical questions, contact: [e-mail]
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12

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