Vishay CPV362M4U Data Sheet
www.vishay.com
IMS-2
IGBT SIP Module
(Fast IGBT)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
per phase (3.1 kW total)
I
RMS
with T
= 90 °C
C
T
J
Supply voltage 360 Vdc
Power factor 0.8
Modulation depth (see fig. 1) 115 %
(typical)
V
CE(on)
at I
= 3.9 A, 25 °C
C
Package SIP
Circuit Three Phase Inverter
4.6 A
125 °C
1.7 V
RMS
CPV362M4UPbF
Vishay Semiconductors
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
•HEXFRED® soft ultrafast diodes
• Optimized for high speed over 5 kHz
See fig. 1 for current vs. frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay´s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current, each IGBT I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Diode maximum forward current I
Gate to emitter voltage V
Isolation voltage V
Maximum power dissipation, each IGBT P
Operating junction and storage temperature range T
Soldering temperature 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw
Notes
(1)
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
VCC = 80 % (V
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
), VGE = 20 V, L = 10 μH, RG = 50 (see fig.19)
GES
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CM
LM
J
CES
FM
ISOL
, T
C
F
GE
TC = 25 °C 7.2
= 100 °C 3.9
T
C
(1)
(2)
TC = 100 °C 3.4
1 minute, any terminal to case 2500 V
TC = 25 °C 23
D
T
= 100 °C 9.1
C
Stg
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
600 V
22
22
± 20 V
- 40 to + 150
5 to 7
(0.55 to 0.8)
Document Number: 94483
lbf · in
(N · m)
A
RMS
W
°C
CPV362M4UPbF
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction R
Case to sink, flat, greased surface R
Weight of module
(IGBT) - 5.5
thJC
(DIODE) - 9.0
thJC
(MODULE) 0.1 -
thCS
20 g
0.7 oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
(1)
Collector to emitter breakdown voltage V
Temperature coefficient of
breakdown voltage
Collector to emitter saturation voltage V
Gate threshold voltage V
Temperature coefficient of
threshold voltage
Forward transconductance g
Zero gate voltage collector current I
Diode forward voltage drop V
Gate to emittler leakage current I
Notes
(3)
Pulse width 80 μs; duty factor 0.1 %
(4)
Pulse width 5.0 μs, single shot
V
V
(VB)CES
(BR)CES
CE(on)
GE(th)
GE(th)
fe
CES
FM
GES
/T
(2)
VGE = 0 V, IC = 250 μA 600 - - V
/TJVGE = 0 V, IC = 1 mA - 0.63 - V/°C
IC = 3.9 A
= 15 V
V
I
= 7.2 A - 1.95 -
C
= 3.9 A, TJ = 150 °C - 1.70 -
I
C
GE
See fig. 2, 5
VCE = VGE, IC = 250 μA
J
VCE = 100 V, IC = 6.5 A 1.4 4.3 - S
VGE = 0 V, VCE = 600 V - - 250
V
= 0 V, VCE = 600 V, TJ = 150 °C - - 2500
GE
IC = 8.0 A
I
= 8.0 A, TJ = 150 °C - 1.3 1.6
C
See fig. 13
VGE = ± 20 V - - ± 100 nA
Vishay Semiconductors
°C/WJunction to case, each DIODE, one DIODE on conduction R
- 1.70 2.2
3.0 - 6.0
-- 11-mV/°C
-1.41.7
V
μA
V
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94483
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CPV362M4UPbF
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) O
Gate to collector charge (turn-on) O
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total switching loss E
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse recovery current I
Diode reverse recovery charge Q
Diode peak rate of fall of
recovery during t
b
dI
d(on)
d(off)
d(on)
d(off)
oes
(rec)M
g
IC = 3.9 A
V
= 400 V
GE
gc
r
f
on
off
ts
CC
V
= 15 V
GE
TJ = 25 °C
I
= 3.9 A, V
C
V
= 15 V, RG = 50
GE
Energy losses include “tail” and diode
= 480 V
CC
reverse recovery
See fig. 9, 10, 11, 18
TJ = 150 °C
r
I
= 3.9 A, VCC = 480 V
C
V
= 15 V, RG = 50
GE
Energy losses include “tail” and diode
reverse recovery
f
See fig. 9, 10, 11, 18
ts
ies
VGE = 0 V
V
= 30 V
CC
= 1.0 MHz
res
TJ = 25 °C
rr
T
= 125 °C - 55 90
J
TJ = 25 °C
rr
T
= 125 °C - 4.5 8.0
J
TJ = 25 °C
rr
T
= 125 °C - 124 360
J
= 25 °C
T
J
/dt
T
= 125 °C - 210 -
J
See fig. 14
See fig. 15
See fig. 16
See fig. 17
See fig. 7
I
= 8.0 A
F
V
= 200 V
R
dI/dt = 200
A/μs
Vishay Semiconductors
-3147
-5.07.5
-1320
-45-
-22-
- 100 160
- 120 180
-0.13-
-0.07-
- 0.20 0.3
-42-
-22-
- 120 -
- 250 -
-0.35- mJ
- 530 -
-39-
-7.4-
-3755
-3.55.0
- 65 138
- 240 -
nCGate to emitter charge (turn-on) O
ns
mJTurn-off switching loss E
ns
pFOutput capacitance C
ns
A
nC
A/μs
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94483
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
0.1 1 10 100
0
1
2
3
4
5
6
7
8
f, Frequency (KHz)
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
0.00
0.29
0.59
0.88
1.17
1.46
1.76
Total Output Power (kW)
2.05
2.34
A
0.1
1
10
100
46810
C
I , Collector-to-Emitter Current (A)
GE
T = 25°C
T = 150°C
J
J
V , Gate-to-Emitter Voltage (V)
A
V = 10V
5μs PULSE WIDTH
CC
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A1.95
C
I = A3.9
C
I = A7.8
C
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of Fundamental)
RMS
CPV362M4UPbF
Vishay Semiconductors
100
10
T = 150°C
J
1
C
I , Collector-to-Emitter Current (A)
0.1
V , Collector-to-Emitter Voltage (V)
CE
T = 25°C
V = 15V
GE
20μs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
8
6
5
J
3
2
Maximum DC Collector Current(A)
0111.0
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 3 - Typical Transfer Characteristics
Revision: 11-Jun-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
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Document Number: 94483
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