Datasheet CPV362M4K DataSheet (Vishay)

PD-5.045B

CPV362M4K

1

IGBT SIP MODULE

FeaturesFeatures

Features

FeaturesFeatures

PRELIMINARY

Short Circuit Rated UltraFast IGBT

• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, V

GE

= 15V

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED

TM

soft ultrafast diodes

Q1

3

Q2

6

D1 D3 D5

Q3

9

D2 D4 D6

Q4

12

15

18

Q5

10 164

Q6

• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve

71319

Product Summary

Output Current in a Typical 20 kHz Motor Drive

4.3 A
Power Factor 0.8, Modulation Depth 115% (See Figure 1)

per phase (1.27 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,

RMS

Description

The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.

IMS-2

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current, each IGBT 5.7
IC @ TC = 100°C Continuous Collector Current, each IGBT 3.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 3.4
I

FM

t

sc

V

GE

V

ISOL

PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  11 A
Clamped Inductive Load Current  11

Diode Maximum Forward Current 11
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Isolation Voltage, any terminal to case, 1 minute 2500 V

Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw 5-7 lbf•in (0.55 - 0.8 N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 5.5

θJC

R

(DIODE) Junction-to-Case, each diode, one diode in conduction ––– 9.0 °C/W

θJC

R

(MODULE) Case-to-Sink, flat, greased surface 0.1 –––

θCS

Wt Weight of module 20 (0.7) ––– g (oz)

RMS

2/24/98

CPV362M4K

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

∆V

V

V

∆V

g
I

V

I

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q
Q
Q
t
t
t
t
E
E

E

t

t
t
t
t
E
C
C
C
t

I

Q

di

Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA

(BR)CES

/∆T

(BR)CES

CE(on)

Temp. Coeff. of Breakdown Voltage ––– 0.49 ––– V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ––– 1.70 1.93 IC = 3.0A VGE = 15V

––– 1.98 ––– V IC = 5.7A See Fig. 2, 5
––– 1.65 ––– IC = 3.0A, TJ = 150°C

GE(th)

GE(th)

fe

CES

Gate Threshold Voltage 3.0 ––– 6 .0 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage ––– - 13 ––– mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  2.0 3.0 ––– S VCE = 100V, IC = 12A
Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V

––– ––– 1700 VGE = 0V, VCE = 600V, TJ = 150°C

FM

Diode Forward Voltage Drop ––– 1. 4 1.7 V IC = 8A See Fig. 13
––– 1.3 1.6 IC = 8A, TJ = 150°C

GES

g
ge

gc
d(on)
r
d(off)
f

on
off
ts

sc

Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Total Gate Charge (turn-on) ––– 38 57 IC = 3.0A
Gate - Emitter Charge (turn-on) ––– 5 .2 8 nC VCC = 400V
Gate - Collector Charge (turn-on) ––– 18 27 See Fig. 8
Turn-On Delay Time ––– 23 ––– TJ = 25°C
Rise Time ––– 54 ––– ns IC = 3.0A, VCC = 480V
Turn-Off Delay Time ––– 125 188 VGE = 15V, RG = 51Ω
Fall Time ––– 120 180 Energy losses include "tail" and
Turn-On Switching Loss ––– 0.14 ––– diode reverse recovery.
Turn-Off Switching Loss ––– 0.07 ––– mJ See Fig. 9, 10, 18
Total Switching Loss ––– 0.21 0.26
Short Circuit Withstand Time 10 ––– ––– µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 51Ω, V

d(on)
r
d(off)
f

ts

ies

oes

res
rr

Turn-On Delay Time ––– 25 ––– TJ = 150°C, See Fig. 10, 11, 18
Rise Time ––– 51 ––– ns IC =3.0A, VCC = 480V
Turn-Off Delay Time ––– 308 ––– VGE = 15V, RG = 51Ω
Fall Time ––– 166 ––– Energy losses include "tail" and
Total Switching Loss ––– 0.33 ––– mJ diode reverse recovery.
Input Capacitance ––– 450 ––– VGE = 0V
Output Capacitance ––– 61 ––– pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ––– 14 ––– ƒ = 1.0MHz
Diode Reverse Recovery Time ––– 37 55 ns TJ = 25°C See Fig.

––– 55 90 TJ = 125°C 14 IF = 8A

rr

Diode Peak Reverse Recovery Current ––– 3.5 5.0 A TJ = 25°C See Fig.

––– 4.5 8.0 TJ = 125°C 15 VR = 200V

rr

Diode Reverse Recovery Charge ––– 65 138 nC TJ = 25°C See Fig.

––– 124 360 TJ = 125°C 16 di/dt=200A/µs

/dt Diode Peak Rate of Fall of Recovery ––– 240 ––– A/µs TJ = 25°C See Fig.

(rec)M

During t

b

––– 210 ––– TJ = 125°C 17

CPK

< 500V

CPV362M4K

7.0

6.0

5.0

4.0

3.0

2.0

LOAD CURRENT (A)

1.0

0.0

0.1 1 10 100

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50 % of R ated V oltage

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

100

of fundamental)

RMS

100

2.05

1.76

1.46

1.17

0.88

0.59

Total Output Power (kW)

0.29

0.00

o

T = 25 C

J

T = 150 C

J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

o

10

T = 150 C

C

I , Collector-to-Emitter Current (A)

1

5 10 15 20

o

J

o

T = 25 C

J

V = 50V

CC

5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

CPV362M4K

)

A

6

4

2

V = 15V

GE

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

T , Case Tem p erature (°C

C

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

2.5

V = 15V

GE

80 us PULSE WIDTH

2.0

1.5

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A6

C

I = A3

C

I = A1.5

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

thJC

T h e rma l Re s p o n s e (Z )

0.20

1

0.10

0.05

0.02

0.01

0.1

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

SIN GLE PU L SE
(THERMAL RESPONSE)

Note s:

1. D uty f acto r D = t / t

2. Pe ak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J

DM

P

DM

t

1

t

2

2

1

thJC

C

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

CPV362M4K

800

600

400

V

=

0V,

GE

C

=

ies ge gc , ce

C

=

res gc

C

=

oes ce gc

C

ies

f = 1MHz

C

+ C
C
C

+ C

C SHORTED

C, Capacitance (pF)

200

0

1 10 100

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.0

V = 480V

CC

V = 15V

GE

T = 25 C

J

I = 6.0A

0.8

C

°

16

V = 400V

CC

I = 3A

C

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

1

R = 51Ohm
V = 15V
V = 480V

G
GE
CC

51

10Ω

Ω

I = A

C

I = A

C

6

3

0.6

0.4

0.2

Total Switching Losses (mJ)

0.0
0 10 20 30 40 50

R , Gate Resistance (Ohm)

G

R

, Gate Resistance ( Ω )

G

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

I = A

C

0.1

Total Switching Losses (mJ)

0.01

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

°

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

1.5

CPV362M4K

)

A

0.8

R = 51Ohm
T = 150 C
V = 480V
V = 15V

0.6

0.4

0.2

G

J
CC
GE

Ω

°

Total Switching Losses (mJ)

0.0
1 2 3 4 5 6 7

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

100

V = 2 0V

GE

T = 12 5° C

J

10

SAFE OPERATING AREA

1

C

I , C o llec tor-to -E mitter Cu rrent (A )

0.1
1 10 100 1000

V , Collector-to-Emitter Voltage (V

CE

Fig. 12 - Turn-Off SOA

F

10

T = 150°C

J

T = 125°C

J

T = 2 5 ° C

J

1

Instantaneous Forward Current - I (A)

0.1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

CPV362M4K

100

V = 200V

R

T = 125°C

J

T = 25°C

J

80

I = 1 6A

F

60

rr

t - (n s )

40

I = 4.0A

F

20

0

100 1000

d i /d t - ( A /µ s )

f

I = 8.0A

F

Fig. 14 - Typical Reverse Recovery vs. dif/dt

500

V = 200V

R

T = 125°C

J

T = 25°C

J

400

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 16 A

10

IRRM

I - ( A )

I = 8.0 A

F

1

100 1000

F

di /d t - (A /µs )

f

I = 4.0A

F

Fig. 15 - Typical Recovery Current vs. dif/dt

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

300

I = 16 A

F

1000

RR

Q - (n C)

200

I = 8.0A

F

100

I = 4.0A

F

0

100 1000

di /d t - (A / µ s)

f

di(re c )M /d t - ( A /µ s)

100

100 1000

I = 16 A

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

I = 4.0A

F

I = 8.0 A

F

F

di / d t - (A/µ s )

f

(rec)M

/dt vs. dif/dt

CPV362M4K

Same type
device as
D.U.T.

80%
of Vce

430µF

D.U.T.

Fig. 18a - Test Circuit for Measurement of

I

LM

Vcc

, Eon, E

10% +V g

10% Ic

td(on)

t1

off(diode)

Vce

tr

, trr, Qrr, Irr, t

GATE VOLTAGE D.U.T.

+Vg

90% Ic

5% Vce

d(on)

, tr, t

Eon =

t2

, t

d(off)

DUT VOLTAGE
AND CURRENT

Ipk

Ic

t2

Vce ie dt

Vce Ic dt

∫

t1

90% Vge

+Vge

Vce

10% Vce

Ic

td(off)

f

t1

90% Ic

Ic

5% Ic

tf

t1+ 5 µ S

Eoff =

Vce ic dt

Vce Ic dt

∫

t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

E

, t

d(off)

t3

, t

f

trr

10% Irr

DIODE RECOVERY
W AVEFORM S

Erec =

t4

Qrr =

∫

t3

trr

id d t

Ic dt

∫

tx

t4

Vd id dt

Vd Ic dt

Vcc

off

Ic

tx

10% Vcc

Vpk

DIODE REVERSE
RECOVERY ENERG Y

Irr

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, t

d(on)

, t

r

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

Vg

GATE SIGNAL
DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

CPV362M4K

t0

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L

1000V

V *

c

50V

6000µF
100V

Figure 19. Clamped Inductive Load Test

Circuit

t1

t2

D.U.T.

RL=

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

480V

4 X IC @25°C

CPV362M4K

Notes:

 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
 VCC=80%(V
 Pulse width ≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.

Case Outline — IMS-2

), VGE=20V, L=10µH, RG = 23Ω (Figure 19)

CES

3.91 (.154)
2X

21.97 (.865)

3.94 (.155)

4.06 ± 0.51
(.160 ± .020)

62.43 (2.458)

53.85 (2.120)

1 2 3 4 5 6 7 8 9 1 0 1 1 12 1 3 1 4 15 1 6 1 7 18 19

1.27 (.050)
13X

2.54 (.100)

5.08 (.200)
6X

6X

IMS-2 Package Outline (13 Pins)

Dimensions in Millim eters and (Inches)

0.76 (.030)
13 X

0.38 (.015)

3.05 ± 0.38
(.120 ± .015)

0.51 (.020)

7.87 (.310)

5.46 (.215)

NOTES:

1. Tolerance unless otherwise
specified ± 0.254 (.010).

2. Co ntro lling Dim e ns ion: Inch.

3. Dimensions are shown in
Millimeter (Inches).

4. Terminal numbers are shown
for r e f e renc e o n ly .

1.27 (.050)

6.10 (.240)

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http://www.irf.com/ Data and specifications subject to change without notice. 2/98