Vishay CPV362M4K Data Sheet
PD-5.045B
CPV362M4K
1
IGBT SIP MODULE
FeaturesFeatures
Features
FeaturesFeatures
PRELIMINARY
Short Circuit Rated UltraFast IGBT
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, V
GE
= 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED
TM
soft ultrafast diodes
Q1
3
Q2
6
D1 D3 D5
Q3
9
D2 D4 D6
Q4
12
15
18
Q5
10 164
Q6
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
71319
Product Summary
Output Current in a Typical 20 kHz Motor Drive
4.3 A
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
per phase (1.27 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
RMS
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current, each IGBT 5.7
IC @ TC = 100°C Continuous Collector Current, each IGBT 3.0
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 3.4
I
FM
t
sc
V
GE
V
ISOL
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W
PD @ TC = 100°C Maximum Power Dissipation, each IGBT 9.1
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 11 A
Clamped Inductive Load Current 11
Diode Maximum Forward Current 11
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Isolation Voltage, any terminal to case, 1 minute 2500 V
Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw 5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 5.5
θJC
R
(DIODE) Junction-to-Case, each diode, one diode in conduction ––– 9.0 °C/W
θJC
R
(MODULE) Case-to-Sink, flat, greased surface 0.1 –––
θCS
Wt Weight of module 20 (0.7) ––– g (oz)
RMS
2/24/98
CPV362M4K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
∆V
V
V
∆V
g
I
V
I
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
C
C
C
t
I
Q
di
Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA
(BR)CES
/∆T
(BR)CES
CE(on)
Temp. Coeff. of Breakdown Voltage ––– 0.49 ––– V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ––– 1.70 1.93 IC = 3.0A VGE = 15V
––– 1.98 ––– V IC = 5.7A See Fig. 2, 5
––– 1.65 ––– IC = 3.0A, TJ = 150°C
GE(th)
GE(th)
fe
CES
Gate Threshold Voltage 3.0 ––– 6 .0 VCE = VGE, IC = 250µA
/∆TJTemp. Coeff. of Threshold Voltage ––– - 13 ––– mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 2.0 3.0 ––– S VCE = 100V, IC = 12A
Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 1700 VGE = 0V, VCE = 600V, TJ = 150°C
FM
Diode Forward Voltage Drop ––– 1. 4 1.7 V IC = 8A See Fig. 13
––– 1.3 1.6 IC = 8A, TJ = 150°C
GES
g
ge
gc
d(on)
r
d(off)
f
on
off
ts
sc
Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Total Gate Charge (turn-on) ––– 38 57 IC = 3.0A
Gate - Emitter Charge (turn-on) ––– 5 .2 8 nC VCC = 400V
Gate - Collector Charge (turn-on) ––– 18 27 See Fig. 8
Turn-On Delay Time ––– 23 ––– TJ = 25°C
Rise Time ––– 54 ––– ns IC = 3.0A, VCC = 480V
Turn-Off Delay Time ––– 125 188 VGE = 15V, RG = 51Ω
Fall Time ––– 120 180 Energy losses include "tail" and
Turn-On Switching Loss ––– 0.14 ––– diode reverse recovery.
Turn-Off Switching Loss ––– 0.07 ––– mJ See Fig. 9, 10, 18
Total Switching Loss ––– 0.21 0.26
Short Circuit Withstand Time 10 ––– ––– µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 51Ω, V
d(on)
r
d(off)
f
ts
ies
oes
res
rr
Turn-On Delay Time ––– 25 ––– TJ = 150°C, See Fig. 10, 11, 18
Rise Time ––– 51 ––– ns IC =3.0A, VCC = 480V
Turn-Off Delay Time ––– 308 ––– VGE = 15V, RG = 51Ω
Fall Time ––– 166 ––– Energy losses include "tail" and
Total Switching Loss ––– 0.33 ––– mJ diode reverse recovery.
Input Capacitance ––– 450 ––– VGE = 0V
Output Capacitance ––– 61 ––– pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ––– 14 ––– ƒ = 1.0MHz
Diode Reverse Recovery Time ––– 37 55 ns TJ = 25°C See Fig.
––– 55 90 TJ = 125°C 14 IF = 8A
rr
Diode Peak Reverse Recovery Current ––– 3.5 5.0 A TJ = 25°C See Fig.
––– 4.5 8.0 TJ = 125°C 15 VR = 200V
rr
Diode Reverse Recovery Charge ––– 65 138 nC TJ = 25°C See Fig.
––– 124 360 TJ = 125°C 16 di/dt=200A/µs
/dt Diode Peak Rate of Fall of Recovery ––– 240 ––– A/µs TJ = 25°C See Fig.
(rec)M
During t
b
––– 210 ––– TJ = 125°C 17
CPK
< 500V
CPV362M4K
7.0
6.0
5.0
4.0
3.0
2.0
LOAD CURRENT (A)
1.0
0.0
0.1 1 10 100
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50 % of R ated V oltage
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
2.05
1.76
1.46
1.17
0.88
0.59
Total Output Power (kW)
0.29
0.00
o
T = 25 C
J
T = 150 C
J
10
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
o
10
T = 150 C
C
I , Collector-to-Emitter Current (A)
1
5 10 15 20
o
J
o
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
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