Vishay CPV362M4F Data Sheet

CPV362M4F

Features

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFRED

TM

soft ultrafast diodes

• Optimized for medium operating (1 to 10 kHz)
See Fig. 1 for Current vs. Frequency curve

Product Summary

Output Current in a Typical 5.0 kHz Motor Drive

11 A

per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,

RMS

Power Factor 0.8, Modulation Depth 115% (See Figure 1)

Description

The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.

Q1

3

Q2

6

71319

PD -5.046

Fast IGBTIGBT SIP MODULE

1

D1 D3 D5

Q3

9

D2 D4 D6

Q4

12

15

18

Q5

10 164

Q6

IMS-2

Absolute Maximum Ratings

Parameter Max. Units

V

CES

Collector-to-Emitter Voltage 600 V

IC @ TC = 25°C Continuous Collector Current, each IGBT 8.8

@ TC = 100°C Continuous Collector Current, each IGBT 4.8

I

C

I

CM

I

LM

@ TC = 100°C Diode Continuous Forward Current 3.4

I

F

I

FM

V

GE

V

ISOL

Pulsed Collector Current  26 A
Clamped Inductive Load Current  26

Diode Maximum Forward Current 26
Gate-to-Emitter Voltage ±20 V
Isolation Voltage, any terminal to case, 1 minute 2500 V

RMS

PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W

@ TC = 100°C Maximum Power Dissipation, each IGBT 9.1

P

D

T

J

T

STG

Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw 5-7 lbf•in (0.55-0.8 N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 5.5

θJC

R

(DIODE) Junction-to-Case, each diode, one diode in conduction ––– 9.0 °C/W

θJC

(MODULE) Case-to-Sink, flat, greased surface 0.1 –––

R

θCS

Wt Weight of module 20 (0.7) ––– g (oz)

9/16/97

CPV362M4F

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

 Repetitive rating; V

Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage – – – 0.72 ––– V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage –– – 1.41 1.7 IC = 4.8A VGE = 15V

––– 1.66 ––– V I

= 8.8A See Fig. 2, 5

C

––– 1.42 ––– IC = 4.8A, TJ = 150°C

Gate Threshold Voltage 3.0 –– – 6. 0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage –– – - 1 1 – – – mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  2.9 5.0 ––– S VCE = 100V, IC = 4.8A
Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V

––– ––– 1700 VGE = 0V, VCE = 600V, TJ = 150°C

Diode Forward Voltage Drop –– – 1.4 1.7 V IC = 8.0A See Fig. 13

––– 1.3 1.6 I

= 8.0A, TJ = 150°C

C

Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Total Gate Charge (turn-on) ––– 30 45 IC = 4.8A
Gate - Emitter Charge (turn-on) ––– 4.0 6.0 nC VCC = 400V
Gate - Collector Charge (turn-on) ––– 13 20 See Fig. 8
Turn-On Delay Time ––– 49 ––– TJ = 25°C
Rise Time ––– 22 ––– ns IC = 4.8A, VCC = 480V
Turn-Off Delay Time ––– 200 300 VGE = 15V, RG = 50Ω
Fall Time ––– 214 320 Energy losses include "tail" and
Turn-On Switching Loss ––– 0.23 ––– diode reverse recovery
Turn-Off Switching Loss ––– 0.33 ––– mJ See Fig. 9, 10, 18
Total Switching Loss ––– 0.45 0.70
Turn-On Delay Time ––– 48 ––– TJ = 150°C, See Fig. 10,11, 18
Rise Time ––– 25 ––– ns IC = 4.8A, VCC = 480V
Turn-Off Delay Time ––– 435 ––– VGE = 15V, RG = 50Ω
Fall Time ––– 364 ––– Energy losses include "tail" and
Total Switching Loss ––– 0.93 ––– mJ diode reverse recovery
Input Capacitance ––– 340 ––– VGE = 0V
Output Capacitance ––– 63 ––– pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ––– 5.9 ––– ƒ = 1.0MHz
Diode Reverse Recovery Time ––– 37 55 ns TJ = 25°C See Fig.

––– 55 90 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current ––– 3 .5 50 A TJ = 25°C See Fig.

––– 4.5 8.0 T

= 125°C 15 VR = 200V

J

Diode Reverse Recovery Charge ––– 65 138 nC TJ = 25°C See Fig.

––– 124 360 T

= 125°C 16 di/dt = 200A/µs

J

/dt Diode Peak Rate of Fall of Recovery ––– 240 ––– A/µs TJ = 25°C See Fig.

During t

b

=20V, pulse width

GE

limited by max. junction temperature.
( See fig. 20 )

––– 210 ––– TJ = 125°C 17

 V

=80%(V

CC

), VGE=20V, L=10µH,

CES

RG= 50Ω, ( See fig. 19 )

 Pulse width ≤ 80µs; duty factor ≤ 0.1%.

 Pulse width 5.0µs, single

shot.

CPV362M4F

9

8

7

6

5

4

3

LOAD CURRENT (A)

2

1

0

0.1 1 10 100

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

2.63

2.34

2.05

1.75

1.46

1.17

0.88

0.58

0.29

0.00

Total Output Power (kW)

100

o

T = 25 C

J

o

T = 150 C

J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

100

o

T = 150 C

J

10

o

T = 25 C

J

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12 13 14

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC

5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

CPV362M4F

10

8

6

4

2

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

°

T , Case Temperature ( C)

C

C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

10

2.5

V = 15V

GE

80 us PULSE WIDTH

I = A9.6

C

2.0

I = A4.8

C

1.5

I = A2.4

C

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

th JC

Th ermal Response (Z )

0.01

0.20

1

0.10

0.05

0.02

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE
(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , R ecta ng u lar Pu lse Dur a t ion ( sec )

1

J

DM

P

DM

12

thJC

t

1

t

2

C

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

CPV362M4F

1000

800

600

400

V

=

0V,

GE

C

=

ies ge gc , ce

C

=

res gc

C

=

oes ce gc

f = 1MHz

C

+ C
C
C

+ C

C

ies

C SHORTED

C, Capacitance (pF)

200

0

1 10 100

V , Collector-to-Emitter Voltage (V)

CE

C

oes

C

res

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.46

V = 480V

CC

V = 15V
T = 25 C

0.45

GE

J

I = 4.8A

C

°

20

V = 400V

CC

I = 4.8A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 6 12 18 24 30

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 50Ohm

50Ω

G

V = 15V

GE

V = 480V

CC

0.44

0.43

Total Switching Losses (mJ)

0.42
10 20 30 40 50

R , Gate Resistance (Ohm)

G

(Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

I = A

C

1

I = A

C

I = A

C

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

°

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

9.6

4.8

2.4

CPV362M4F

2.0

R = 50Ohm

50 Ω

T = 150 C
V = 480V

CC

V = 15V

GE

1.5

1.0

0.5

G
J

°

Total Switching Losses (mJ)

0.0
0 2 4 6 8 10

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

100

V = 20V

GE

GE

T = 125° C

J

SAFE O PERATING AREA

10

C

I , Co lle c t o r-to -Emitter Cu rr e n t (A )

1

1 10 100 1000

V , Co llec tor- to -E m i tte r V olta ge (V )

CE

Fig. 12 - Turn-Off SOA

F

10

T = 150°C

J

T = 125°C

J

T = 25°C

J

1

Instantaneous Forward Current - I (A)

0.1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

CPV362M4F

100

V = 200V

R

T = 125°C

J

T = 25°C

J

80

I = 16A

F

60

rr

t - (ns )

40

I = 4.0A

F

20

0

100 1000

di /dt - ( A /µs)

f

I = 8.0 A

F

Fig. 14 - Typical Reverse Recovery vs. dif/dt

500

V = 200V

R

T = 125°C

J

T = 25°C

J

400

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 16A

10

IRRM

I - (A )

I = 8.0A

F

1

100 1000

F

I = 4.0A

di /d t - ( A / µ s )

f

F

Fig. 15 - Typical Recovery Current vs. dif/dt

10000

V = 200V

R

T = 125°C

J

T = 25 °C

J

300

I = 4.0A

I = 16A

F

RR

Q - ( n C )

200

I = 8.0 A

F

100

0

100 1000

di / d t - ( A /µ s)

f

I = 4.0A

F

1000

di(re c )M /d t - (A / µ s )

100

100 1000

F

I = 8. 0A

F

I = 16A

F

di /d t - ( A /µ s )

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

f

(rec)M

/dt vs. dif/dt

CPV362M4F

Same type
device as
D.U.T.

80%
of Vce

430µF

D.U.T.

Fig. 18a - Test Circuit for Measurement of

I

LM

Vcc

, Eon, E

10% +Vg

10% Ic

td(on)

t1 t2

off(diode)

Vce

tr

, trr, Qrr, Irr, t

GATE VOLTAGE D.U.T.

+Vg

90% Ic

5% Vce

d(on)

, tr, t

Eon =

, t

d(off)

DUT VOLTAGE
AND CURRENT

Ipk

Ic

t2

Vce ie dt

Vce Ic dt

∫

t1

90% Vge

+Vge

Vce

10% Vce

Ic

td(off)

f

t1

90% Ic

Ic

5% Ic

tf

Eoff =

t2

t1+5µS

Vce Ic dt

Vce ic dt

∫

t1

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

, t

d(off)

t3

, t

f

trr

10% Irr

DIODE RE COV E RY
WAVEFORMS

Erec =

t4

Qrr =

∫

t3

trr

id dt

Ic dt

∫

tx

t4

Vd id dt

Vd Ic dt

Vcc

E

off

Ic

tx
10% Vcc

Vpk

DIODE REVERSE
RECOVERY ENERGY

Irr

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

r

on

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

Vg

GATE SIGN AL
DEVICE UNDE R TE ST

CURRENT D.U.T.

VOL T A G E IN D.U .T.

CURRENT IN D1

CPV362M4F

t0 t1

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L

V *

50V

6000µ F
100V

1000V

c

Figure 19. Clamped Inductive Load Test

Circuit

t2

D.U.T.

RL=

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

4 X I

480V

@25°C

C

CPV362M4F

Notes:

 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
 VCC=80%(V
 Pulse width ≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.

Case Outline  IMS-2

), VGE=20V, L=10µH, RG = 22Ω (figure 19)

CES

3.91 (.154)

2X

21.97 (.865)

3.94 (.155)

4.06 ± 0.51
(.160 ± .020)

62.43 (2.458)

53.85 (2.120)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 7 18 19

1.27 (.050)
13X

2.54 (.100)

5.08 (.200)
6X

6X

IMS-2 Package Outline (13 Pins)

Dim en s ion s in Millim et e rs a nd (In c he s )

0.76 (.030)
13X

0.38 (.015)

3.05 ± 0.38
(.120 ± .015)

0.51 (.020)

7.87 (.310)

5.46 (.215)

NOTES:

1. Tolerance unless otherwise
specified ± 0.254 (.010).

2. Controlling Dimension: Inch.

3. Dimensions are shown in
Millimeter (Inches).

4. Terminal numbers are shown
for reference only.

1.27 (.050)

6.10 (.240)

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http://www.irf.com/ Data and specifications subject to change without notice. 9/97