Vishay CPV362M4F Data Sheet
CPV362M4F
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFRED
TM
soft ultrafast diodes
• Optimized for medium operating (1 to 10 kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
11 A
per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
RMS
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Q1
3
Q2
6
71319
PD -5.046
Fast IGBTIGBT SIP MODULE
1
D1 D3 D5
Q3
9
D2 D4 D6
Q4
12
15
18
Q5
10 164
Q6
IMS-2
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current, each IGBT 8.8
@ TC = 100°C Continuous Collector Current, each IGBT 4.8
I
C
I
CM
I
LM
@ TC = 100°C Diode Continuous Forward Current 3.4
I
F
I
FM
V
GE
V
ISOL
Pulsed Collector Current 26 A
Clamped Inductive Load Current 26
Diode Maximum Forward Current 26
Gate-to-Emitter Voltage ±20 V
Isolation Voltage, any terminal to case, 1 minute 2500 V
RMS
PD @ TC = 25°C Maximum Power Dissipation, each IGBT 23 W
@ TC = 100°C Maximum Power Dissipation, each IGBT 9.1
P
D
T
J
T
STG
Operating Junction and -40 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw 5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
(IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 5.5
θJC
R
(DIODE) Junction-to-Case, each diode, one diode in conduction ––– 9.0 °C/W
θJC
(MODULE) Case-to-Sink, flat, greased surface 0.1 –––
R
θCS
Wt Weight of module 20 (0.7) ––– g (oz)
9/16/97
CPV362M4F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Repetitive rating; V
Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage – – – 0.72 ––– V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage –– – 1.41 1.7 IC = 4.8A VGE = 15V
––– 1.66 ––– V I
= 8.8A See Fig. 2, 5
C
––– 1.42 ––– IC = 4.8A, TJ = 150°C
Gate Threshold Voltage 3.0 –– – 6. 0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage –– – - 1 1 – – – mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 2.9 5.0 ––– S VCE = 100V, IC = 4.8A
Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 1700 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop –– – 1.4 1.7 V IC = 8.0A See Fig. 13
––– 1.3 1.6 I
= 8.0A, TJ = 150°C
C
Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Total Gate Charge (turn-on) ––– 30 45 IC = 4.8A
Gate - Emitter Charge (turn-on) ––– 4.0 6.0 nC VCC = 400V
Gate - Collector Charge (turn-on) ––– 13 20 See Fig. 8
Turn-On Delay Time ––– 49 ––– TJ = 25°C
Rise Time ––– 22 ––– ns IC = 4.8A, VCC = 480V
Turn-Off Delay Time ––– 200 300 VGE = 15V, RG = 50Ω
Fall Time ––– 214 320 Energy losses include "tail" and
Turn-On Switching Loss ––– 0.23 ––– diode reverse recovery
Turn-Off Switching Loss ––– 0.33 ––– mJ See Fig. 9, 10, 18
Total Switching Loss ––– 0.45 0.70
Turn-On Delay Time ––– 48 ––– TJ = 150°C, See Fig. 10,11, 18
Rise Time ––– 25 ––– ns IC = 4.8A, VCC = 480V
Turn-Off Delay Time ––– 435 ––– VGE = 15V, RG = 50Ω
Fall Time ––– 364 ––– Energy losses include "tail" and
Total Switching Loss ––– 0.93 ––– mJ diode reverse recovery
Input Capacitance ––– 340 ––– VGE = 0V
Output Capacitance ––– 63 ––– pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ––– 5.9 ––– ƒ = 1.0MHz
Diode Reverse Recovery Time ––– 37 55 ns TJ = 25°C See Fig.
––– 55 90 TJ = 125°C 14 IF = 8.0A
Diode Peak Reverse Recovery Current ––– 3 .5 50 A TJ = 25°C See Fig.
––– 4.5 8.0 T
= 125°C 15 VR = 200V
J
Diode Reverse Recovery Charge ––– 65 138 nC TJ = 25°C See Fig.
––– 124 360 T
= 125°C 16 di/dt = 200A/µs
J
/dt Diode Peak Rate of Fall of Recovery ––– 240 ––– A/µs TJ = 25°C See Fig.
During t
b
=20V, pulse width
GE
limited by max. junction temperature.
( See fig. 20 )
––– 210 ––– TJ = 125°C 17
V
=80%(V
CC
), VGE=20V, L=10µH,
CES
RG= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single
shot.
CPV362M4F
9
8
7
6
5
4
3
LOAD CURRENT (A)
2
1
0
0.1 1 10 100
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
2.63
2.34
2.05
1.75
1.46
1.17
0.88
0.58
0.29
0.00
Total Output Power (kW)
100
o
T = 25 C
J
o
T = 150 C
J
10
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
100
o
T = 150 C
J
10
o
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12 13 14
V , Gate-to-Emitter Voltage (V)
GE
V = 50V
CC
5µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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