VISHAY CNY75A, CNY75 B, CNY75C, CNY75GA, CNY75 GB Technical data

CNY75A/ B/ C/ GA/ GB/ GC

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

C

Features

• Isolation materials according to UL94-VO

• Pollution degree 2 (DIN/VDE 0110 / resp. IEC

60664)

• Climatic classification 55/100/21
(IEC 60068 part 1)

• Special construction: Therefore, extra low cou­pling capacity of typical 0.2 pF, high Common
Mode Rejection

• Low temperature coefficient of CTR

• CTR offered in 3 groups

17186

B

e3

E

546

231

ncC (-)A (+)

V

DE

Pb

Pb-free

• Rated isolation voltage (RMS includes DC)
V

IOWM

= 600 V

(848 V peak)

RMS

• Rated recurring peak voltage (repetitive)
V

= 600 V

IORM

RMS

• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index: CTI
≥ 275

• Thickness through insulation ≥ 0.75 mm

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E76222 System Code A, Double
Protection

• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN
60950 (BS 7002), Certificate number 7081 and
7402

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

• VDE related features:

• Rated impulse voltage (transient overvoltage)
V

= 6 kV peak

IOTM

• Isolation test voltage (partial discharge test volt­age) V

= 1.6 kV

pd

• FIMKO (SETI): EN 60950, Certificate No. 12399

Applications

Circuits for safe protective separation against electri­cal shock according to safety class II (reinforced iso­lation):

For appl. class I - IV at mains voltage ≤ 300 V

For appl. class I - III at mains voltage ≤ 600 V accord-
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2, suitable for:

Switch-mode power supplies, line receiver, com­puter peripheral interface, microprocessor sys­tem interface.

Description

The CNY75A/ B/ C/ GA/ GB/ GC consists of a pho­totransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-pin plastic dual inline
package.

The elements are mounted on one leadframe provid­ing a fixed distance between input and output for high­est safety requirements.

VDE Standards

These couplers perform safety functions according to the following

equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending

Optocoupler for electrical safety requirements

IEC 60950/ EN 60950

Office machines (applied for reinforced isolation for mains voltage

≤

400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related house hold appa-

ratus

Document Number 83536

Rev. 1.7, 26-Oct-04

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1

CNY75A/ B/ C/ GA/ GB/ GC

Vishay Semiconductors

Order Information

Par t Remarks

CNY75A CTR 63 - 125 %, DIP-6

CNY75B CTR 100 - 200 %, DIP-6

CNY75C CTR 160 - 320 %, DIP-6

CNY75GA CTR 63 - 125 %, DIP-6

CNY75GB CTR 100 - 200 %, DIP-6

CNY75GC CTR 160 - 320 %, DIP-6

G = Leadform 10.16 mm; G is not marked on the body

For additional information on the available options refer to
Option Information.

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

Power dissipation P

Junction temperature T

≤ 10 µsI

p

R

F

FSM

diss

j

5V

60 mA

3A

100 mW

125 °C

Output

Parameter Test condition Symbol Val ue Unit

Collector base voltage V

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

Coupler

Parameter Test condition Symbol Val ue Unit

AC isolation test voltage (RMS) t = 1 min V

Total power dissipation P

Ambient temperature range T

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

CBO

CEO

ECO

C

CM

diss

ISO

tot

amb

stg

sld

90 V

90 V

7V

50 mA

100 mA

150 mW

j

125 °C

3750 V

250 mW

- 55 to + 100 °C

- 55 to + 125 °C

260 °C

RMS

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Document Number 83536

Rev. 1.7, 26-Oct-04

CNY75A/ B/ C/ GA/ GB/ GC

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Junction capacitance V

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector base voltage I

Collector emitter voltage I

Emitter collector voltage I

Collector-emitter leakage
current

= 50 mA V

F

= 6 V I

R

= 0, f = 1 MHz C

R

= 100 µAV

C

= 1 mA V

C

= 100 µAV

E

V

= 20 V, IF = 0 I

CE

R

CBO

CEO

ECO

CEO

F

j

90 V

90 V

7V

1.25 1.6 V

10 µA

50 pF

150 nA

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation

= 10 mA, IC = 1 mA V

I

F

CEsat

0.3 V

voltage

Cut-off frequency V

= 5 V, IF = 10 mA,

CE

= 100 Ω

R

L

Coupling capacitance f = 1 MHz C

f

c

k

110 kHz

0.3 pF

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

I

C/IF

VCE = 5 V, IF = 1 mA CNY75GA CTR 15 %

CNY75GB CTR 30 %

CNY75GC CTR 60 %

= 5 V, IF = 10 mA CNY75GA CTR 63 1.25 %

V

CE

CNY75GB CTR 100 200 %

CNY75GC CTR 160 320 %

Switching Characteristics

Para meter Current Delay Rise time Storage Fall time Tu r n -o n

time

Te s t

condition

Symbol I

F

t

D

VCC = 5 V, RL = 100 Ω

(see figure 3)

t

r

t

S

t

f

t

on

Unit mA µs µs µs µs µs µs µs µs

CNY75GA 10 2.0 2.5 0.3 2.7 4.5 3.0 10.0 25.0

CNY75GB 10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 20.0

CNY75GC 10 2.8 4.2 0.3 4.7 7.0 5.0 11.0 37.5

Turn-off

time

t

off

Turn-on

Turn-off

time

VCC = 5 V, RL = 1.0 kΩ

(see figure 4)

t

on

time

t

off

Document Number 83536

Rev. 1.7, 26-Oct-04

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CNY75A/ B/ C/ GA/ GB/ GC

Vishay Semiconductors

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter Test condition Symbol Min Ty p . Max Unit

Forward current I

Output

Parameter Test condition Symbol Min Ty p . Max Unit

Power dissipation P

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Rated impulse voltage V

Safety temperature T

F

diss

IOTM

si

130 mA

265 mW

6kV

150 °C

Insulation Rated Parameters

Parameter Test condition Symbol Min Ty p . Max Unit

Partial discharge test voltage ­Routine test

Partial discharge test voltage ­Lot test (sample test)

Insulation resistance V

275

250

225

200

175

150

125

100

75

Isi(mA)

50

25

tot

P - Total Power Dissipation ( mW )

0

0 25 50 75 100 125 150 175

T

95 10923

- Ambient Temperature ( °C)

amb

Psi(mW)

100 %, t

test

= 60 s, t

t

Tr

(see figure 2)

= 500 V R

IO

V

= 500 V, T

IO

V

= 500 V, T

IO

(construction test only)

= 1 s V

= 10 s,

test

≤ 100 °C R

amb

≤ 150 °C

amb

V

13930

pd

IOTM

V

pd

IO

IO

R

IO

V

V

IOWM

V

IOTM

V

IORM

1.6 kV

6kV

1.3 kV

12

10

11

10

9

10

t1, t2 = 1 to 10 s
t

, t4 = 1 s

3

= 10 s

t

test

t

= 12 s

stres

Pd

0

t

1

tTr = 60 s

t

2

t

t3t

test

t

stres

t

Ω

Ω

Ω

4

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4

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to DIN EN

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

Document Number 83536

Rev. 1.7, 26-Oct-04