Page 1
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
Description
The CNY70 has a compact construction where the
emitting light source and the detector are arranged in
the same direction to sense the presence of an object
by using the reflective IR beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
CNY70
Applications
D
Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc.
(optoelectronic encoder assemblies for
transmission sensing).
Features
D
Compact construction in center-to-center spacing
of 0.1’
D
No setting required
D
High signal output
D
Low temperature coefficient
D
Detector provided with optical filter
D
Current Transfer Ratio (CTR) of typical 5%
Top view
94 9320
Marking aerea
DE
95 10930
Order Instruction
Ordering Code Sensing Distance Remarks
CNY70 0.3 mm
Rev. A4, 05–Apr–00
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CNY70
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CEO
ECO
C
V
5 V
50 mA
3 A
100 mW
j
100
°
C
32 V
7 V
50 mA
100 mW
j
100
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 5 s T
≤ 25°C P
amb
tot
amb
stg
sd
200 mW
–55 to +85
–55 to +100
260
°
C
°
C
°
C
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2 (7) Rev. A4, 05–Jun–00
Document Number 83751
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CNY70
Vishay Semiconductors
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
F
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCE = 20 V, If = 0, E = 0 I
CEO
ECO
CEO
32 V
5 V
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
V
1)
I
C
I
CX
CEsat
0.3 1.0 mA
2)
1)
Collector current VCE = 5 V, IF = 20 mA,
d = 0.3 mm (figure 1)
Cross talk current VCE = 5 V, IF = 20 mA
(figure 1)
Collector emitter saturation voltage
1)
Measured with the ‘Kodak neutral test card’, white side with 90% diffuse reflectance
2)
Measured without reflecting medium
IF = 20 mA, IC = 0.1 mA,
d = 0.3 mm (figure 1)
1.25 1.6 V
200 nA
600 nA
0.3 V
Emitter
Rev. A4, 05–Apr–00
d
~
~
ACCE
~
~
~
~
Figure 1. Test circuit
Reflecting medium
(Kodak neutral test card)
Detector
95 10808
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CNY70
Vishay Semiconductors
Typical Characteristics (T
300
Coupled device
200
Phototransistor
100
IR-diode
tot
P – Total Power Dissipation ( mW )
0
0 255075100
95 11071
1000.0
100.0
T
– Ambient Temperature ( °C )
amb
Figure 2. Total Power Dissipation vs.
Ambient Temperature
= 25_C, unless otherwise specified)
amb
10
Kodak Neutral Card
(White Side)
d=0.3
1
=5V
V
CE
0.1
0.01
C
I – Collector Current ( mA )
0.001
0.1 1 10
95 11065
IF – Forward Current ( mA )
Figure 5. Collector Current vs. Forward Current
10
Kodak Neutral Card
(White Side)
d=0.3
1
100
IF = 50 mA
20 mA
10 mA
10.0
1.0
F
I – Forward Current ( mA )
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
Figure 3. Forward Current vs. Forward Voltage
1.5
VCE=5V
1.4
I
=20mA
F
1.3
d=0.3
1.2
1.1
1.0
0.9
0.8
0.7
rel
0.6
CTR – Relative Current Transfer Ratio
0.5
–30 –20–10 0 10 20 30 40 50 60 70 80
T
– Ambient Temperature ( °C )96 11913
amb
5 mA
2 mA
1 mA
100
C
I – Collector Current ( mA )
95 11066
0.1
0.01
0.1 1 10
V
– Collector Emitter Voltage ( V )
CE
Figure 6. Collector Current vs. Collector Emitter Voltage
100.0
Kodak neutral card
(white side)
10.0
1.0
VCE=5V
d=0.3
CTR – Current Transfer Ratio ( % )
0.1
0.1 1.0 10.0 100.0
IF – Forward Current ( mA )96 11914
Figure 4. Relative Current Transfer Ratio vs.
Figure 7. Current Transfer Ratio vs. Forward Current
Ambient Temperature
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4 (7) Rev. A4, 05–Jun–00
Document Number 83751
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10.0
IF=50mA
CNY70
Vishay Semiconductors
0°
10°20
°
30°
1.0
CTR – Current Transfer Ratio ( % )
0.1
0.1 1.0 10.0 100.0
Figure 8. Current Transfer Ratio vs.
10
1
0.1
C
I – Collector Current ( mA )
0.001
02468
95 11069
20mA
10mA
5mA
2mA
VCE – Collector Emitter Voltage ( V )96 12001
Kodak neutral card
(white side)
d=0.3
Collector Emitter Voltage
VCE=5V
I
=20mA
F
d – Distance ( mm )
1mA
1.0
0.9
0.8
e rel
c rel
0.7
I – Relative Radiant Intensity
I – Relative Collector Current
0.4 0.2 0 0.2 0.4
0.6
95 11063
40°
50°
60°
70°
80°
0.6
Figure 10. Relative Radiant Intensity/Collector Current vs.
Displacement
d
10
Figure 9. Collector Current vs. Distance
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Crel
I – Relative Collector Current
0.1
0
01234567891011
Rev. A4, 05–Apr–00
d = 5 mm
4 mm
3 mm
2 mm
1 mm
0
VCE = 5 V
I
= 20 mA
F
s – Displacement ( mm )96 11915
Figure 11. Relative Collector Current vs. Displacement
1.5
ED
E
D
0
s
5mm
d
10mm
0
s
5mm
10mm
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CNY70
Vishay Semiconductors
Dimensions of CNY70 in mm
95 11345
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6 (7) Rev. A4, 05–Jun–00
Document Number 83751
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CNY70
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Rev. A4, 05–Apr–00
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.comDocument Number 83751
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