17187-4
CNY65
CNY66
CNY64
CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation Voltage
FEATURES
Top View
A
C
17187-5
V
DE
C
E
DESCRIPTION
The CNY64, CNY65, and CNY66 consist of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
• IEC 60950/EN 60950
Office machines
• VDE 0804
Telecommunication apparatus and data processing
• IEC60065
Safety for mains-operated electronic and related
household apparatus
• VDE 0700/IEC 60335
Household equipment
• VDE 0160
Electronic equipment for electrical power installation
• VDE 0750/IEC60601
Medical equipment
• Rated recurring peak voltage (repetitive)
V
= 1450 V
IORM
peak
• Thickness through insulation 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI 200
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage 300 V
• for appl. class I - IV at mains voltage 600 V
• for appl. class I - III at mains voltage 1000 V according
to DIN EN 60747-5-2 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
AGENCY APPROVALS
• UL1577, file no. E76222 system code H, J, and K
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• VDE related features:
- rated impulse voltage (transient overvoltage),
V
= 12 kV peak
IOTM
- isolation test voltage (partial discharge test voltage),
= 2.8 kV peak
V
pd
ORDERING INFORMATION
DIP, 400 mil DIP, 600 mil DIP, 700 mil
CNY 6 # x
PART NUMBER PACKAGE
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, VDE 50 to 300 63 to 125 100 to 200
DIP-4 HV, 400 mil, high isolation distance CNY64 CNY64A CNY64B
DIP-4 HV, 600 mil, high isolation distance CNY65 CNY65A CNY65B
DIP-4 HV, 700 mil, high isolation distance CNY66 - CNY66B
Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com
Rev. 2.1, 24-Feb-11 1
OPTION
CTR
BIN
10.16 mm
15.24 mm
17.8 mm
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CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
Forward current I
Forward surge current t
Power dissipation P
Junction temperature T
OUTPUT
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current t
Power dissipation P
Junction temperature T
COUPLER
AC isolation test voltage CNY64 t = 1 min V
DC isolation test voltage CNY65 t = 1 s V
DC isolation test voltage CNY66 t = 1 s V
Total power dissipation P
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, 10 s T
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
= 25 °C, unless otherwise specified)
amb
10 μs I
p
/T = 0.5, tp 10 ms I
p
FSM
diss
CEO
ECO
CM
diss
ISO
ISO
ISO
amb
stg
sld
R
F
5V
75 mA
1.5 A
120 mW
j
100 °C
32 V
7V
C
50 mA
100 mA
130 mW
j
100 °C
8200 V
RMS
13.9 kV
13.9 kV
tot
250 mW
- 55 to + 85 °C
- 55 to + 100 °C
260 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
Junction capacitance V
= 50 mA V
F
= 0, f = 1 MHz C
R
F
j
1.25 1.6 V
50 pF
OUTPUT
Collector emitter voltage I
Emitter collector voltage I
Collector emitter leakage current V
= 1 mA V
C
= 100 μA V
E
= 20 V, IF = 0 A I
CE
CEO
ECO
CEO
32 V
7V
200 nA
COUPLER
Collector emitter saturation voltage I
Cut-off frequency
Coupling capacitance f = 1 MHz C
= 10 mA, IC = 1 mA V
F
V
= 5 V, IF = 10 mA,
CE
R
= 100
L
CEsat
f
c
k
0.3 V
110 kHz
0.3 pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83540
2 Rev. 2.1, 24-Feb-11
0
25
50
75
100
125
150
175
200
225
250
0 25 50 75 100 125 150 175 200
TSI - Safety Temperature(°C)
P
SO
(mW)
ISI(mA)
t
13930
t1, t2 = 1 to 10 s
t
3
, t4 = 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
tTr = 60 s
t
stres
t3t
4
t
2
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Vishay Semiconductors
Very High Isolation Voltage
CURRENT TRANSFER RATIO (T
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C/IF
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage routine test
Partial discharge test voltage lot test (sample test)
V
IO
V
Insulation resistance
Forward current I
Power dissipation P
Rated impulse voltage V
Safety temperature T
Note
• According to DIN EN 60747-5-2 (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
IO
V
IO
(construction test only)
= 25 °C, unless otherwise specified)
amb
CNY64,
CNY65,
CNY66
CNY64A CTR 63 125 %
VCE = 5 V, IF = 10 mA
CNY65A CTR 63 125 %
CNY64B CTR 100 200 %
CNY65B CTR 100 200 %
CNY66B CTR 100 200 %
100 %, t
t
= 60 s, t
Tr
= 500 V, T
= 500 V, T
= 500 V, T
= 1 s V
test
= 10 s,
test
(see fig. 2)
amb
= 100 °C R
amb
= 150 °C
amb
= 25 °C R
pd
V
pd
IO
IO
R
IO
SI
SO
IOTM
SI
CTR 50 300 %
2.8 kV
2.2 kV
12
10
10
10
11
9
120 mA
250 mW
12 kV
150 °C
Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com
Rev. 2.1, 24-Feb-11 3
Fig. 1 - Safety Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
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