VISHAY CNY 17F-3 VIS Datasheet

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1
2
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6
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NC
C
E
A
C
NC
i179004-14
Optocoupler, Phototransistor Output, no Base Connection
DESCRIPTION
The CNY17F is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages.
In contrast to the CNY17 series, the base terminal of the F type is not conected, resulting in a substantially improved common-mode interference immunity.
CNY17F
Vishay Semiconductors
FEATURES
• Isolation test voltage, 5000 V
• No base terminal connection for improved common mode interface immunity
• Long term stability
• Industry standard dual-in-line package
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
AGENCY APPROVALS
Safety application model number covering all products in this datasheet is CNY17F. This model number should be used when consulting safety agency documents.
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• BSI: EN 60065, EN 60950-1
• FIMKO EN60950
• CQC GB8898-2011
RMS
ORDERING INFORMATION
CNY17F - #X0 ##T
DIP-6
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
7.62 mm 10.16 mm
Option 7
> 8 mm
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4
DIP-6, 400 mil, option 6 CNY17F-1X006 CNY17F-2X006 CNY17F-3X006 CNY17F-4X006
SMD-6, option 7 CNY17F-1X007
SMD-6, option 9 CNY17F-1X009T
(1)
(1)
CNY17F-2X007T
CNY17F-2X009T
(1)
(1)
CNY17F-3X007T
CNY17F-3X009T
(1)
(1)
CNY17F-4X007T
CNY17F-4X009T
VDE, UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 CNY17F-1X001 CNY17F-2X001 CNY17F-3X001 CNY17F-4X001
DIP-6, 400 mil, option 6 CNY17F-1X016 CNY17F-2X016 CNY17F-3X016 CNY17F-4X016
SMD-6, option 7 CNY17F-1X017
(1)
CNY17F-2X017
SMD-6, option 9 CNY17F-1X019 CNY17F-2X019
(1)
(1)
CNY17F-3X017
CNY17F-3X019
(1)
(1)
CNY17F-4X017
Notes
• Additional options may be possible, please contact sales office.
(1)
Rev. 2.2, 08-Jan-14
Also available in tubes; do not put T on end.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 83607
Option 6
Option 9
8 mm typ.
(1)
(1)
(1)
-
www.vishay.com
CNY17F
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT
Reverse voltage V DC forward current I Surge forward current t 10 μs I Power dissipation P
R
F
FSM
diss
6V
60 mA
2.5 A
100 mW
OUTPUT
Collector emitter breakdown voltage BV Collector current I Collector peak current t
/T = 0.5, tp 10 ms I
p
Output power dissipation P
CEO
C
CM
diss
70 V
50 mA 100 mA 150 mW
COUPLER
Isolation test voltage between emitter and detector
Storage temperature range T Ambient temperature range T Junction temperature T Soldering temperature
(1)
Total power dissipation P
t = 1 min V
2 mm from case, 10 s T
ISO
stg
amb
sld
diss
5000 V
RMS
-55 to +150 °C
-55 to +110 °C
j
100 °C 260 °C 250 mW
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through hole parts (DIP).
300
250
200
150
100
- Total Power Dissipation (mW)
tot
P
Coupled device
Phototransistor
IR-diode
50
0
0 20 40 60 80 100 120
T
- Ambient Temperature (°C)
amb
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT
Forward voltage I Breakdown voltage I Reverse current V Capacitance V
= 60 mA V
F
= 10 μA V
R
= 6 V I
R
= 0 V, f = 1 MHz C
R
BR
R
F
1.39 1.65 V
6V
0.01 10 μA
O
25 pF
OUTPUT
Collector emitter capacitance V Base collector capacitance V Emitter base capacitance V
= 5 V, f = 1 MHz C
CE
= 5 V, f = 1 MHz C
CE
= 5 V, f = 1 MHz C
CE
CE
BC
EB
5.2 pF
6.5 pF
7.5 pF
Rev. 2.2, 08-Jan-14
2
Document Number: 83607
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
CNY17F
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT COUPLER
Collector emitter, saturation voltage I
= 10 mA, IC = 2.5 mA V
F
Coupling capacitance C
CNY17F-1 I
Collector emitter, leakage current V
= 10 V
CE
CNY17F-2 I CNY17F-3 I CNY17F-4 I
CEsat
C
CEO
CEO
CEO
CEO
0.25 0.4 V
0.6 pF 250nA 250nA 5 100 nA 5 100 nA
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
CNY17F-1 CTR 40 80 %
CNY17F-2 CTR 63 125 %
CNY17F-3 CTR 100 200 %
CNY17F-4 CTR 160 320 %
CNY17F-1 CTR 13 30 %
CNY17F-2 CTR 22 45 %
CNY17F-3 CTR 34 70 %
I
C/IF
IF = 10 mA
I
= 1 mA
F
CNY17F-4 CTR 56 90 %
Note
• Current transfer ratio I
at VCE = 5 V, 25 °C and collector emitter leakage current by dash number.
C/IF
SWITCHING CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LINEAR OPERATION (without saturation)
= 10 mA, VCC = 5 V,
I
Turn-on time
Rise time
Turn-off time
Fall time
Cut-off frequency
F
R
= 75 Ω
L
I
= 10 mA, VCC = 5 V,
F
R
= 75 Ω
L
I
= 10 mA, VCC = 5 V,
F
R
= 75 Ω
L
IF = 10 mA, VCC = 5 V,
R
= 75 Ω
L
I
= 10 mA, VCC = 5 V,
F
R
= 75 Ω
L
t
on
t
r
t
off
t
f
f
CO
s
s
2.3 μs
s
110 kHz
SWITCHING OPERATION (with saturation)
Turn-on time
Rise time
Turn-off time
Fall time
Rev. 2.2, 08-Jan-14
= 20 mA CNY17F-1 t
I
F
I
= 10 mA
F
I
= 5 mA CNY17F-4 t
F
= 20 mA CNY17F-1 t
I
F
I
= 10 mA
F
= 5 mA CNY17F-4 t
I
F
I
= 20 mA CNY17F-1 t
F
= 10 mA
I
F
I
= 5 mA CNY17F-4 t
F
I
= 20 mA CNY17F-1 t
F
= 10 mA
I
F
I
= 5 mA CNY17F-4 t
F
CNY17F-2 t CNY17F-3 t
CNY17F-2 t CNY17F-3 t
CNY17F-2 t CNY17F-3 t
CNY17F-2 t CNY17F-3 t
3
on
on
on
on
r
r
r
r
off
off
off
off
f
f
f
f
s
4.2 μs
4.2 μs 6μs 2μs 3μs 3μs
4.6 μs
18 μs 23 μs 23 μs 25 μs 11 μs 14 μs 14 μs 15 μs
Document Number: 83607
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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