VISHAY CNY17F Technical data
CNY17F
1
2
3
6
5
4
NC
C
E
A
C
NC
18216
Vishay Semiconductors
Optocoupler, Phototransistor Output, No Base Connection
Features
• Breakdown Voltage, 5300 V
• No Base Terminal Connection for Improved Common Mode Interface Immunity
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
RMS
e3
Pb
Pb-free
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• BSI IEC60950 IEC60065
• FIMKO
Description
The CNY17F is an optocoupler consisting af a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a
plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The
potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of
the F type is not conected, resulting in a substantially
improved common-mode interference immunity.
Order Information
Part Remarks
CNY17F-1 CTR 40 - 80 %, DIP-6
CNY17F-2 CTR 63 - 125 %, DIP-6
CNY17F-3 CTR 100 - 200 %, DIP-6
CNY17F-4 CTR 160 - 320 %, DIP-6
CNY17F-1X006 CTR 40 - 80 %, DIP-6 400 mil (option 6)
CNY17F-1X007 CTR 40 - 80 %, SMD-6 (option 7)
CNY17F-1X009 CTR 40 - 80 %, SMD-6 (option 9)
CNY17F-2X006 CTR 63 - 125 %, DIP-6 400 mil (option 6)
CNY17F-2X007 CTR 63 - 125 %, SMD-6 (option 7)
CNY17F-2X009 CTR 63 - 125 %, SMD-6 (option 9)
CNY17F-3X006 CTR 100 - 200 %, DIP-6 400 mil (option 6)
CNY17F-3X007 CTR 100 - 200 %, SMD-6 (option 7)
CNY17F-3X009 CTR 100 - 200 %, SMD-6 (option 9)
CNY17F-4X006 CTR 160 - 320 %, DIP-6 400 mil (option 6)
CNY17F-4X007 CTR 160 - 320 %, SMD-6 (option 7)
CNY17F-4X009 CTR 160 - 320 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
1
CNY17F
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC forward current I
Surge forward current t ≤ 10 µsI
Power dissipation P
R
F
FSM
diss
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter breakdown
voltage
Collector current I
t ≤ 1.0 ms I
Total power dissipation P
BV
CEO
C
C
diss
6.0 V
60 mA
2.5 A
100 mW
70 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s, dip soldering:
= 500 V R
IO
distance to seating plane
≥ 1.5 mm
V
T
ISO
IO
stg
amb
j
sld
5300 V
≥ 0.4 mm
175
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
RMS
Ω
www.vishay.com
2
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Breakdown voltage I
Reserve current V
Capacitance V
= 60 mA V
F
= 10 µAV
R
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
Thermal resistance R
Output
Parameter Test condition Symbol Min Ty p . Max Unit
Collector-emitter capacitance V
Base - collector capacitance V
Emitter - base capacitance V
Thermal resistance R
= 5.0 V, f = 1.0 MHz C
CE
= 5.0 V, f = 1.0 MHz C
CE
= 5.0 V, f = 1.0 MHz C
CE
BR
R
F
6.0 V
O
th
CE
BC
EB
th
1.25 1.65 V
0.01 10 µA
25 pF
750 K/W
5.2 pF
6.5 pF
7.5 pF
500 K/W
Coupler
Parameter Test condition Part Symbol Min Ty p . Max Unit
Saturation voltage, collectoremitter
Coupling capacitance C
Collector-emitter leakage
current
= 10 mA, IC = 2.5 mA V
I
F
V
= 10 V CNY17F-1 I
CE
CNY17F-2 I
CNY17F-3 I
CNY17F-4 I
CEsat
C
CEO
CEO
CEO
CEO
Current Transfer Ratio
Current Transfer Ratio IC/IF at VCE = 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number
Parameter Test condition Part Symbol Min Ty p . Max Unit
Current Transfer Ratio I
= 10 mA CNY17F-1 CTR 40 80 %
F
CNY17F-2 CTR 63 125 %
CNY17F-3 CTR 100 200 %
CNY17F-4 CTR 160 320 %
= 1.0 mA CNY17F-1 CTR 13 30 %
I
F
CNY17F-2 CTR 22 45 %
CNY17F-3 CTR 34 70 %
CNY17F-4 CTR 56 90 %
0.25 0.4 V
0.6 pF
2.0 50 nA
2.0 50 nA
5.0 100 nA
5.0 100 nA
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
3
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