CNY17F
1
2
3
6
5
4
NC
C
E
A
C
NC
18216
Vishay Semiconductors
Optocoupler, Phototransistor Output, No Base Connection
Features
• Breakdown Voltage, 5300 V
• No Base Terminal Connection for Improved Common Mode Interface Immunity
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
RMS
e3
Pb
Pb-free
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• BSI IEC60950 IEC60065
• FIMKO
Description
The CNY17F is an optocoupler consisting af a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a
plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The
potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of
the F type is not conected, resulting in a substantially
improved common-mode interference immunity.
Order Information
Part Remarks
CNY17F-1 CTR 40 - 80 %, DIP-6
CNY17F-2 CTR 63 - 125 %, DIP-6
CNY17F-3 CTR 100 - 200 %, DIP-6
CNY17F-4 CTR 160 - 320 %, DIP-6
CNY17F-1X006 CTR 40 - 80 %, DIP-6 400 mil (option 6)
CNY17F-1X007 CTR 40 - 80 %, SMD-6 (option 7)
CNY17F-1X009 CTR 40 - 80 %, SMD-6 (option 9)
CNY17F-2X006 CTR 63 - 125 %, DIP-6 400 mil (option 6)
CNY17F-2X007 CTR 63 - 125 %, SMD-6 (option 7)
CNY17F-2X009 CTR 63 - 125 %, SMD-6 (option 9)
CNY17F-3X006 CTR 100 - 200 %, DIP-6 400 mil (option 6)
CNY17F-3X007 CTR 100 - 200 %, SMD-6 (option 7)
CNY17F-3X009 CTR 100 - 200 %, SMD-6 (option 9)
CNY17F-4X006 CTR 160 - 320 %, DIP-6 400 mil (option 6)
CNY17F-4X007 CTR 160 - 320 %, SMD-6 (option 7)
CNY17F-4X009 CTR 160 - 320 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
1
CNY17F
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
DC forward current I
Surge forward current t ≤ 10 µsI
Power dissipation P
R
F
FSM
diss
Output
Parameter Test condition Symbol Val ue Unit
Collector-emitter breakdown
voltage
Collector current I
t ≤ 1.0 ms I
Total power dissipation P
BV
CEO
C
C
diss
6.0 V
60 mA
2.5 A
100 mW
70 V
50 mA
100 mA
150 mW
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance V
Storage temperature range T
Ambient temperature range T
Junction temperature T
Soldering temperature max. 10 s, dip soldering:
= 500 V R
IO
distance to seating plane
≥ 1.5 mm
V
T
ISO
IO
stg
amb
j
sld
5300 V
≥ 0.4 mm
175
11
≥ 10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
260 °C
RMS
Ω
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2
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Breakdown voltage I
Reserve current V
Capacitance V
= 60 mA V
F
= 10 µAV
R
= 6.0 V I
R
= 0 V, f = 1.0 MHz C
R
Thermal resistance R
Output
Parameter Test condition Symbol Min Ty p . Max Unit
Collector-emitter capacitance V
Base - collector capacitance V
Emitter - base capacitance V
Thermal resistance R
= 5.0 V, f = 1.0 MHz C
CE
= 5.0 V, f = 1.0 MHz C
CE
= 5.0 V, f = 1.0 MHz C
CE
BR
R
F
6.0 V
O
th
CE
BC
EB
th
1.25 1.65 V
0.01 10 µA
25 pF
750 K/W
5.2 pF
6.5 pF
7.5 pF
500 K/W
Coupler
Parameter Test condition Part Symbol Min Ty p . Max Unit
Saturation voltage, collectoremitter
Coupling capacitance C
Collector-emitter leakage
current
= 10 mA, IC = 2.5 mA V
I
F
V
= 10 V CNY17F-1 I
CE
CNY17F-2 I
CNY17F-3 I
CNY17F-4 I
CEsat
C
CEO
CEO
CEO
CEO
Current Transfer Ratio
Current Transfer Ratio IC/IF at VCE = 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number
Parameter Test condition Part Symbol Min Ty p . Max Unit
Current Transfer Ratio I
= 10 mA CNY17F-1 CTR 40 80 %
F
CNY17F-2 CTR 63 125 %
CNY17F-3 CTR 100 200 %
CNY17F-4 CTR 160 320 %
= 1.0 mA CNY17F-1 CTR 13 30 %
I
F
CNY17F-2 CTR 22 45 %
CNY17F-3 CTR 34 70 %
CNY17F-4 CTR 56 90 %
0.25 0.4 V
0.6 pF
2.0 50 nA
2.0 50 nA
5.0 100 nA
5.0 100 nA
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
3
CNY17F
I
F
1KΩ
V
CC
=5 V
47 Ω
icny17f_02
Vishay Semiconductors
Switching Characteristics
Linear operation (without saturation)
Parameter Test condition Symbol Min Ty p. Max Unit
Turn-on time I
Rise time I
Turn-off time I
Fall time I
Cut-off frequency I
Switching operation (with saturation)
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Turn-on time I
Rise time I
Turn-off time I
Fall time I
= 10 mA, VCC = 5.0 V,
F
= 75 W
R
L
= 10 mA, VCC = 5.0 V,
F
= 75 W
R
L
= 10 mA, VCC = 5.0 V,
F
= 75 W
R
L
= 10 mA, VCC = 5.0 V,
F
= 75 W
R
L
= 10 mA, VCC = 5.0 V,
F
= 75 W
R
L
= 20 mA CNY17F-1 t
F
I
= 10 mA CNY17F-2 t
F
I
= 5.0 mA CNY17F-4 t
F
= 20 mA CNY17F-1 t
F
I
= 10 mA CNY17F-2 t
F
I
= 5.0 mA CNY17F-4 t
F
= 20 mA CNY17F-1 t
F
I
= 10 mA CNY17F-2 t
F
I
= 5.0 mA CNY17F-4 t
F
= 20 mA CNY17F-1 t
F
I
= 10 mA CNY17F-2 t
F
I
= 5.0 mA CNY17F-4 t
F
t
on
t
r
t
off
t
f
f
CO
CNY17F-3 t
CNY17F-3 t
CNY17F-3 t
CNY17F-3 t
3.0 µs
2.0 µs
2.3 µs
2.0 µs
250 kHz
on
on
on
on
r
r
r
r
off
off
off
off
f
f
f
f
3.0 µs
4.2 µs
4.2 µs
6.0 µs
2.0 µs
3.0 µs
3.0 µs
4.6 µs
18 µs
23 µs
23 µs
25 µs
11 µs
14 µs
14 µs
15 µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
RL=75 Ω
I
C
=5 V
V
CC
Figure 2. Switching Operation (with Saturation)
45 Ω
icny17f_01
Figure 1. Linear Operation ( without Saturation)
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4
I
F
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
(TA= –25°C, VCE= 5.0 V)
IC/IF=f(IF)
icny17f_03
Figure 3. Current Transfer Ratio vs. Diode Current
(TA=0°C,VCE= 5.0 V)
IC/IF=f(IF)
(TA= 50°C, VCE= 5.0 V)
1
2
3
4
icny17f_06
1
2
3
4
A
Figure 6. Current Transfer Ratio vs. Diode Current
(TA= 75°C, VCE= 5.0 V)
1
2
3
4
1
2
3
4
icny17f_04
Figure 4. Current Transfer Ratio vs. Diode Current
(TA= 25°C, VCE= 5.0 V)
IC/IF=f(IF)
icny17f_05
Figure 5. Current Transfer Ratio vs. Diode Current
icny17f_07
Figure 7. Current Transfer Ratio vs. Diode Current
(IF= 10 mA, VCE= 5.0 V)
IC/IF= f (T)
4
3
1
2
3
4
icny17f_08
2
1
A
Figure 8. Current Transfer Ratio (CTR) vs. Temperature
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
5
CNY17F
Vishay Semiconductors
(TA= 25°C) IC=f(VCE)
V
CEsat
=f(IC)(TA= 25°C)
icny17f_09
Figure 9. Output Characteristics CNY17F-2, -3
VF=f(IF)
icny17f_10
Figure 10. Forward Voltage
icny17f_12
Figure 12. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-1
V
=f(IC)(TA= 25°C)
CEsat
icny17f_13
Figure 13. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-2
V
=f(IC)(TA= 25°C)
CEsat
icny17f_11
Figure 11. Collector-Emitter off-state Current
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6
I
= f (V,T)
CEO
(TA= 75°C, IF=0)
icny17f_14
Figure 14. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-3
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
V
icny17f_15
V
=f(IC)(TA= 25°C)
CEsat
Figure 15. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-4
D=parameter,
TA= 25°C, IF=f(tp)
IF=f(TA)
icny17f_18
Figure 18. Permissible Forward Current Diode
C=f (VO)(TA= 25°C, f=1.0 MHz)
icny17f_16
Figure 16. Permissible Pulse Load
P
=f(TA)
tot
icny17f_17
Figure 17. Permissible Power Dissipation for Transistor and Diode
icny17f_19
Figure 19. Transistor Capacitance
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
7
CNY17F
Vishay Semiconductors
Package Dimensions in Inches (mm)
Option 6
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
i178004
3
4
5
.335 (8.50)
.343 (8.70)
.028 (0.7)
MIN.
12
pin one ID
6
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
Option 7
.300 (7.62)
TYP.
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.180 (4.6)
.160 (4.1)
3°–9°
.0040 (.102)
.0098 (.249)
ISO Method A
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
.012 (.30) typ.
15° max.
18450
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8
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83607
Rev. 1.5, 26-Oct-04
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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