VISHAY BZX84C2V7, BZX84C51 Technical data

BZX84C2V7–BZX84C51

350 mW Surface Mount Zener Diodes

Features

D

Planar die construction

D

350 mW Power dissipation

D

Zener voltages from 2.7V – 51V

D

Ideally suited for automated assembly processes

Vishay Telefunken

94 8550

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Power dissipation on ceramic substrate

10mm x 8mm x 0.7mm
Zener current (see figures 1–3 below)
Junction and storage

temperature range

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient on ceramic substrate 10mm x 8mm x 0.7mm R

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward Voltage IF=10 mA V

F

P

Tj=T

thJA

d

stg

350 mW

–55...+150

420 K/W

0.9 V

°

C

Document Number 85606
Rev. 1, 01-Apr-99 1 (5)

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BZX84C2V7–BZX84C51

Vishay Telefunken

Type Marking V

BZX84C... V

@ I

Z

ZT

Z

ZT

W

@ I

mA

ZT

Z

ZK

W

@ I

ZK

T

mA %/°C

C

I

R

m

A V

2V7 KZC 2.5 to 2.9 100 5.0 600 1.0 –0.065 20 1.0
3V0 KZD 2.8 to 3.2 100 5.0 600 1.0 –0.060 10 1.0
3V3 KZE 3.1 to 3.5 95 5.0 600 1.0 –0.055 5.0 1.0
3V6 KZF 3.4 to 3.8 95 5.0 600 1.0 –0.055 5.0 1.0
3V9 KZG 3.7 to 4.1 90 5.0 600 1.0 –0.050 3.0 1.0
4V3 KZH 4.0 to 4.6 90 5.0 600 1.0 –0.035 3.0 1.0
4V7 KZ1 4.4 to 5.0 80 5.0 500 1.0 –0.015 4.0 2.0
5V1 KZ2 4.8 to 5.4 60 5.0 480 1.0 +0.005 2.0 2.0
5V6 KZ3 5.2 to 6.0 40 5.0 400 1.0 +0.020 1.0 2.0
6V2 KZ4 5.8 to 6.6 10 5.0 150 1.0 +0.030 3.0 4.0
6V8 KZ5 6.4 to 7.2 15 5.0 80 1.0 +0.045 2.0 4.0
7V5 KZ6 7.0 to 7.9 15 5.0 80 1.0 +0.050 1.0 5.0
8V2 KZ7 7.7 to 8.7 15 5.0 80 1.0 +0.055 0.7 5.0
9V1 KZ8 8.5 to 9.6 15 5.0 100 1.0 +0.065 0.5 6.0

10 KZ9 9.4 to 10.6 20 5.0 150 1.0 +0.065 0.2 7.0
11 KY1 10.4 to 11.6 20 5.0 150 1.0 +0.070 0.1 8.0
12 KY2 11.4 to 12.7 25 5.0 150 1.0 +0.075 0.1 8.0
13 KY3 12.4 to 14.1 30 5.0 170 1.0 +0.080 0.1 8.0
15 KY4 13.8 to 15.6 30 5.0 200 1.0 +0.080 0.05 0.7V
16 KY5 15.3 to 17.1 40 5.0 200 1.0 +0.090 0.05 0.7V
18 KY6 16.8 to 19.1 45 5.0 225 1.0 +0.090 0.05 0.7V
20 KY7 18.8 to 21.2 55 5.0 225 1.0 +0.090 0.05 0.7V
22 KY8 20.8 to 23.3 55 5.0 250 1.0 +0.090 0.05 0.7V
24 KY9 22.8 to 25.6 70 5.0 250 1.0 +0.090 0.05 0.7V
27 KYA 25.1 to 28.9 80 2.0 300 0.5 +0.090 0.05 0.7V
30 KYB 28 to 32 80 2.0 300 0.5 +0.090 0.05 0.7V
33 KYC 31 to 35 80 2.0 325 0.5 +0.090 0.05 0.7V
36 KYD 34 to 38 90 2.0 350 0.5 +0.090 0.05 0.7V
39 KYE 37 to 41 130 2.0 350 0.5 +0.110 0.05 0.7V
43 KYF 40 to 46 150 2.0 375 0.5 +0.110 0.05 0.7V
47 KYG 44 to 50 170 2.0 375 0.5 +0.110 0.05 0.7V
51 KYH 48 to 54 180 2.0 400 0.5 +0.110 0.05 0.7V

@ V

R

Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom
Znom

1) Device mounted on ceramic substrate 8mmx10mmx0.7mm

2) VZ measured at IZT using a pulse test. IZ pulse width = 5 ms. Standard voltage tolerance is 5%.

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Rev. 1, 01-Apr-992 (5)

BZX84C2V7–BZX84C51

Characteristics (Tj = 25_C unless otherwise specified)

Vishay Telefunken

15251

50

Tj=25°C

C2V7

C3V3

C3V9

C4V7

40

30

20

Z

Test Current I

I – Z-Current ( mA )

10

5.0mA

z

0

0

12345678910

VZ – Z-Voltage ( V )

Figure 1. Z–Current vs. Z–Voltage

30

Tj=25°C

C10

C12

20

10

Test Current I

Z

I – Z-Current ( mA )

5.0mA

C15

C18

C22

z

C5V6

C6V8

C27

C8V2

Test Current I

2.0mA

C33

C36

500

400

See Note 1

300

200

100

tot

P – Total Power Dissipation ( mW )

0

100

200

15254

0

T

– Ambient Temperature ( °C )

amb

Figure 4. Total Power Dissipation vs.

Ambient Temperature

1000

V

= 1V

R

VR = 2V

100

z

D

C – Diode Capacitance ( pF )

VR = 2V

V

= 1V

R

Tj=25°C

15252

0

0

10 20 30 40

VZ – Z-Voltage ( V )

Figure 2. Z–Current vs. Z–Voltage

10

Tj=25°C

C39

C43

C47

C51

15255

10

1

10

VZ – Z-Voltage ( V )

Figure 5. Diode Capacitance vs. Z–Voltage

100

8

6

4

Test Current I

Z

I – Z-Current ( mA )

2

2.0mA

z

0

0

15253

10 20 30 40 50 60 70 80 90 100

VZ – Z-Voltage ( V )

Figure 3. Z–Current vs. Z–Voltage

Document Number 85606
Rev. 1, 01-Apr-99 3 (5)

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BZX84C2V7–BZX84C51

Vishay Telefunken

Dimensions in mm

top view

Case: SOT23, molded plastic
Mounting position: any
Approx. weight: 0.008 grams

14370

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Rev. 1, 01-Apr-994 (5)

BZX84C2V7–BZX84C51

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 85606
Rev. 1, 01-Apr-99 5 (5)

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