Vishay BZX84B10-V, BZX84B11-V, BZX84B12-V, BZX84B13-V, BZX84B15-V Schematic [ru]

...
Small Signal Zener Diodes
Features
• These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23 series.
• The Zener voltages are graded according to the international E 24 standard. Standard Zener volt­age tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.
• Silicon Planar Power Zener Diodes
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
e3
BZX84-V-Series
Vishay Semiconductors
12
Mechanical Data
Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
18078
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Power dissipation P
1)
Device on fiberglass substrate, see layout.
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Thermal resistance junction to ambient air R
Junction temperature T
Storage temperature range T
1)
Device on fiberglass substrate, see layout.
tot
thJA
S
1)
300
1)
420
j
150 °C
- 65 to + 150 °C
mW
°C/W
Document Number 85763
Rev. 1.7, 14-Jul-05
www.vishay.com
1
BZX84-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Marking
Code
BZX84C2V4-V Z11 2.2 2.6 70 (≤100) 275 5 -9.0 -4.0 1 50 1
BZX84C2V7-V Z12 2.5 2.9 75 (100) 300 (600) 5 -9.0 -4.0 1 20 1
BZX84C3V0-V Z13 2.8 3.2 80 (95) 325 (600) 5 -9.0 -3.0 1 10 1
BZX84C3V3-V Z14 3.1 3.5 85 (95) 350 (600) 5 -8.0 -3.0 1 5 1
BZX84C3V6-V Z15 3.4 3.8 85 (90) 375 (600) 5 -8.0 -3.0 1 5 1
BZX84C3V9-V Z16 3.7 4.1 85 (90) 400 (600) 5 -7.0 -3.0 1 3 1
BZX84C4V3-V Z17 4 4.6 80 (90) 410 (600) 5 -6.0 -1.0 1 3 1
BZX84C4V7-V Z1 4.4 5 50 (80) 425 (500) 5 -5.0 +2.0 1 3 2
BZX84C5V1-V Z2 4.8 5.4 40 (60) 400 (480) 5 -3.0 +4.0 1 2 2
BZX84C5V6-V Z3 5.2 6 15 (40) 80 (400) 5 -2.0 +6.0 1 1 2
BZX84C6V2-V Z4 5.8 6.6 6.0 (10) 40 (150) 5 -1.0 +7.0 1 3 4
BZX84C6V8-V Z5 6.4 7.2 6.0 (15) 30 (≤80) 5 +2.0 +7.0 1 2 4
BZX84C7V5-V Z6 7 7.9 6.0 (15) 30 (≤80) 5 +3.0 +7.0 1 1 5
BZX84C8V2-V Z7 7.7 8.7 6.0 (15) 40 (≤80) 5 +4.0 +7.0 1 0.7 5
BZX84C9V1-V Z8 8.5 9.6 6.0 (15) 40 (≤100) 5 +5.0 +8.0 1 0.5 6
BZX84C10-V Z9 9.4 10.6 8.0 (20) 50 (150) 5 +5.0 +8.0 1 0.2 7
BZX84C11-V Y1 10.4 11.6 10 (20) 50 (150) 5 +5.0 +9.0 1 0.1 8
BZX84C12-V Y2 11.4 12.7 10 (25) 50 (150) 5 +6.0 +9.0 1 0.1 8
BZX84C13-V Y3 12.4 14.1 10 (30) 50 (170) 5 +7.0 +9.0 1 0.1 8
BZX84C15-V Y4 13.8 15.6 10 (30) 50 (200) 5 +7.0 +9.0 1 0.05 0.7 V
BZX84C16-V Y5 15.3 17.1 10 (40) 50 (200) 5 +8.0 +9.5 1 0.05 0.7 V
BZX84C18-V Y6 16.8 19.1 10 (45) 50 (225) 5 +8.0 +9.5 1 0.05 0.7 V
BZX84C20-V Y7 18.8 21.2 15 (55) 60 (225) 5 +8.0 +10 1 0.05 0.7 V
BZX84C22-V Y8 20.8 23.3 20 (55) 60 (250) 5 +8.0 +10 1 0.05 0.7 V
BZX84C24-V Y9 22.8 25.6 25 (70) 60 (250) 5 +8.0 +10 1 0.05 0.7 V
BZX84C27-V Y10 25.1 28.9 25 (80) 65 (300) 2 +8.0 +10 0.5 0.05 0.7 V
BZX84C30-V Y11 28 32 30 (80) 70 (300) 2 +8.0 +10 0.5 0.05 0.7 V
BZX84C33-V Y12 31 35 35 (80) 75 (325) 2 +8.0 +10 0.5 0.05 0.7 V
BZX84C36-V Y13 34 38 35 (90) 80 (350) 2 +8.0 +10 0.5 0.05 0.7 V
BZX84C39-V Y14 37 41 40 (130) 80 (350) 2 +10 +12 0.5 0.05 0.7 V
BZX84C43-V Y15 40 46 45 (150) 85 (375) 2 +10 +12 0.5 0.05 0.7 V
BZX84C47-V Y16 44 50 50 (170) 85 (375) 2 +10 +12 0.5 0.05 0.7 V
BZX84C51-V Y17 48 54 60 (180) 85 (400) 2 +10 +12 0.5 0.05 0.7 V
BZX84C56-V Y18 52 60 70 (200) 100 (425) 2 +9.0 +11 0.5 0.05 0.7 V
BZX84C62-V Y19 58 66 80 (215) 100 (450) 2 +9.0 +12 0.5 0.05 0.7 V
BZX84C68-V Y20 64 72 90 (240) 150 (475) 2 +10 +12 0.5 0.05 0.7 V
BZX84C75-V Y21 70 79 95 (255) 170 (500) 2 +10 +12 0.5 0.05 0.7 V
Zener
Voltage
Range
Dynamic Resistance Te s t
Current
Te mp .
Coefficient
of Zener
Voltage
VZ @ I
ZT1rzj
V mA
@ I
ZT1rzj
@ I
ZT2
I
ZT1
αVZ @ I
10-4/°C
ZT1
min max min max
Te st
Reverse Leakage
Current
I
ZT2
I
R
mA µA V
Current
@ V
R
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
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Document Number 85763
Rev. 1.7, 14-Jul-05
BZX84-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Marking
Code
BZX84B2V4-V Z50 2.35 2.45 70 (≤100) 275 5 -9 -4 1 50 1
BZX84B2V7-V Z51 2.65 2.75 75 (100) 300 (600) 5 -9 -4 1 20 1
BZX84B3V0-V Z52 2.94 3.06 80 (95) 325 (600) 5 -9 -3 1 10 1
BZX84B3V3-V Z53 3.23 3.37 85 (95) 350 (600) 5 -8 -3 1 5 1
BZX84B3V6-V Z54 3.53 3.67 85 (90) 375 (600) 5 -8 -3 1 5 1
BZX84B3V9-V Z55 3.82 3.98 85 (90) 400 (600) 5 -7 -3 1 3 1
BZX84B4V3-V Z56 4.21 4.39 80 (90) 410 (600) 5 -6 -1 1 3 1
BZX84B4V7-V Z57 4.61 4.79 50 (80) 425 (500) 5 -5 2 1 3 2
BZX84B5V1-V Z58 5 5.2 40 (60) 400 (480) 5 -3 4 1 2 2
BZX84B5V6-V Z59 5.49 5.71 15 (40) 80 (400) 5 -2 6 1 1 2
BZX84B6V2-V Z60 6.08 6.32 6.0 (10) 40 (150) 5 -1 7 1 3 4
BZX84B6V8-V Z61 6.66 6.94 6.0 (15) 30 (≤80)527124
BZX84B7V5-V Z62 7.35 7.65 6.0 (15) 30 (≤80)537115
BZX84B8V2-V Z63 8.04 8.36 6.0 (15) 40 (80) 5 4 7 1 0.7 5
BZX84B9V1-V Z64 8.92 9.28 6.0 (15) 40 (100) 5 5 8 1 0.5 6
BZX84B10-V Z65 9.8 10.2 8.0 (20) 50 (150) 5 5 8 1 0.2 7
BZX84B11-V Z66 10.8 11.2 10 (20) 50 (150) 5 5 9 1 0.1 8
BZX84B12-V Z67 11.8 12.2 10 (25) 50 (150) 5 6 9 1 0.1 8
BZX84B13-V Z68 12.7 13.3 10 (30) 50 (170) 5 7 9 1 0.1 8
BZX84B15-V Z69 14.7 15.3 10 (30) 50 (200) 5 7 9 1 0.05 0.7 V
BZX84B16-V Z70 15.7 16.3 10 (40) 50 (200) 5 8 9.5 1 0.05 0.7 V
BZX84B18-V Z71 17.6 18.4 10 (45) 50 (225) 5 8 9.5 1 0.05 0.7 V
BZX84B20-V Z72 19.6 20.4 15 (55) 60 (225) 5 8 10 1 0.05 0.7 V
BZX84B22-V Z73 21.6 22.4 20 (55) 60 (250) 5 8 10 1 0.05 0.7 V
BZX84B24-V Z74 23.5 24.5 25 (70) 60 (250) 5 8 10 1 0.05 0.7 V
BZX84B27-V Z75 26.5 27.5 25 (80) 65 (300) 2 8 10 0.5 0.05 0.7 V
BZX84B30-V Z76 29.4 30.6 30 (80) 70 (300) 2 8 10 0.5 0.05 0.7 V
BZX84B33-V Z77 32.3 33.7 35 (80) 75 (325) 2 8 10 0.5 0.05 0.7 V
BZX84B36-V Z78 35.3 36.7 35 (90) 80 (350) 2 8 10 0.5 0.05 0.7 V
BZX84B39-V Z79 38.2 39.8 40 (130) 80 (350) 2 10 12 0.5 0.05 0.7 V
BZX84B43-V Z80 42.1 43.9 45 (150) 85 (375) 2 10 12 0.5 0.05 0.7 V
BZX84B47-V Z81 46.1 47.9 50 (170) 85 (375) 2 10 12 0.5 0.05 0.7 V
BZX84B51-V Z82 50 52 60 (180) 85 (400) 2 10 12 0.5 0.05 0.7 V
BZX84B56-V Z83 54.9 57.1 70 (200) 100 (425) 2 9 11 0.5 0.05 0.7 V
BZX84B62-V Z84 60.8 63.2 80 (215) 100 (450) 2 9 12 0.5 0.05 0.7 V
BZX84B68-V Z85 66.6 69.4 90 (240) 150 (475) 2 10 12 0.5 0.05 0.7 V
BZX84B75-V Z86 73.5 76.5 95 (255) 170 (500) 2 10 12 0.5 0.05 0.7 V
Zener
Voltage
Range
Dynamic Resistance Te s t
Current
Te m p.
Coefficient
of Zener
Voltage
VZ @ I
ZT1rzj
V mA
@ I
ZT1rzj
@ I
ZT2
I
ZT1
αVZ @ I
10-4/°C
ZT1
min max min max
Te s t
Current
I
ZT2
Reverse Leakage
Current
I
R
mA µA V
@ V
R
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Znom.
Document Number 85763
Rev. 1.7, 14-Jul-05
www.vishay.com
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BZX84-V-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18114
Figure 1. Forward characteristics
18115
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
°C
18117
Figure 4. Dynamic Resistance vs. Zener Current
18118
Figure 5. Capacitance vs. Zener Voltage
18116
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
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18119
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85763
Rev. 1.7, 14-Jul-05
BZX84-V-Series
Vishay Semiconductors
°C
18120
Figure 7. Dynamic Resistance vs. Zener Current
°C/ W
18121
Figure 8. Thermal Differential Resistance vs. Zener Voltage
18135
=,
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
18124
Figure 11. Change of Zener Voltage vs. Junction Temperature
°C
18122
Figure 9. Dynamic Resistance vs. Zener Voltage
Document Number 85763
Rev. 1.7, 14-Jul-05
18136
Figure 12. Temperature Dependence of Zener Voltage vs. Zener
Voltage
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BZX84-V-Series
Vishay Semiconductors
18126
Figure 13. Change of Zener Voltage vs. Junction Temperature
18137
Figure 14. Change of Zener voltage from turn-on up to the point of
18138
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
thermal equilibrium vs. Zener voltage
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Document Number 85763
Rev. 1.7, 14-Jul-05
18111
BZX84-V-Series
Vishay Semiconductors
18112
Figure 16. Breakdown Characteristics
Figure 17. Breakdown Characteristics
Document Number 85763
Rev. 1.7, 14-Jul-05
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7
BZX84-V-Series
Vishay Semiconductors
18113
Layout for R
Theta;JA
test
Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm)
Figure 18. Breakdown Characteristics
12 (0.47)
15 (0.59)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1.5 (0.06)
5.1 (0.2)
1 (0.4)
2 (0.8)
1 (0.4)
2 (0.8)
17451
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Document Number 85763
Rev. 1.7, 14-Jul-05
Package Dimensions in mm (Inches)
0.1 (.004) max.
0.4 (.016)0.4 (.016)
3.1 (.122)
2.8 (.110)
0.4 (.016)
1.20(.047)
1.43 (.056)
0.175 (.007)
0.098 (.005)
2.0 (0.079)
BZX84-V-Series
Vishay Semiconductors
2.6 (.102)
2.35 (.092)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
0.95 (.037)
1.15 (.045)
ISO Method E
0.95 (.037)0.95 (.037)
0.95 (0.037)0.95 (0.037)
17418
Document Number 85763
Rev. 1.7, 14-Jul-05
www.vishay.com
9
BZX84-V-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85763
Rev. 1.7, 14-Jul-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1
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