Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with
type designation AZ23 series and the dual zener
diode common cathode configuration in the SOT23 case with type designation DZ23 series.
• The Zener voltages are graded according to the
international E 24 standard.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
BZT52-V-Series
Vishay Semiconductors
17431
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Zener current see table "
Characteristics "
Power dissipation P
Power dissipation P
1)
Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2)
Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Thermal resistance junction to
ambient air
Junction temperature T
Storage temperature range T
1)
Valid provided that electrodes are kept at ambient temperature
tot
tot
R
thJA
J
S
2)
500
1)
410
1)
300
150 °C
- 65 to + 150 °C
mW
mW
°C/W
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
1
BZT52-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Marking
Code
BZT52C2V4-V W1 2.2 2.6 85 600 5 - 9 to - 4 - - -
BZT52C2V7-V W2 2.5 2.9 75 (< 83) < 500 5 - 9 to - 4 - 113 134
BZT52C3V0-V W3 2.8 3.2 80 (< 95) < 500 5 - 9 to - 3 - 98 118
BZT52C3V3-V W4 3.1 3.5 80 (< 95) < 500 5 - 8 to - 3 - 92 109
BZT52C3V6-V W5 3.4 3.8 80 (< 95) < 500 5 - 8 to - 3 - 85 100
BZT52C3V9-V W6 3.7 4.1 80 (< 95) < 500 5 - 7 to - 3 - 77 92
BZT52C4V3-V W7 4 4.6 80 (< 95) < 500 5 - 6 to - 1 - 71 84
BZT52C4V7-V W8 4.4 5 70 (< 78) < 500 5 - 5 to +2 - 64 76
BZT52C5V1-V W9 4.8 5.4 30 (< 60) < 480 5 - 3 to +4 > 0.8 56 67
BZT52C5V6-V WA 5.2 6 10 (< 40) < 400 5 - 2 to +6 > 1 50 59
BZT52C6V2-V WB 5.8 6.6 4.8 (< 10) < 200 5 - 1 to +7 > 2 45 54
BZT52C6V8-V WC 6.4 7.2 4.5 (< 8) < 150 5 +2 to +7 > 3 41 49
BZT52C7V5-V WD 7 7.9 4 (< 7) < 50 5 +3 to +7 > 5 37 44
BZT52C8V2-V WE 7.7 8.7 4.5 (< 7) < 50 5 +4 to +7 > 6 34 40
BZT52C9V1-V WF 8.5 9.6 4.8 (< 10) < 50 5 +5 to +8 > 7 30 36
BZT52C10-V WG 9.4 10.6 5.2 (< 15) < 70 5 +5 to +8 > 7.5 28 33
BZT52C11-V WH 10.4 11.6 6 (< 20) < 70 5 +5 to +9 > 8.5 25 30
BZT52C12-V WI 11.4 12.7 7 (< 20) < 90 5 +6 to +9 > 9 23 28
BZT52C13-V WK 12.4 14.1 9 (< 25) < 110 5 +7 to +9 > 10 21 25
BZT52C15-V WL 13.8 15.6 11 (< 30) < 110 5 +7 to +9 > 11 19 23
BZT52C16-V WM 15.3 17.1 13 (< 40) < 170 5 +8 to +9.5 > 12 17 20
BZT52C18-V WN 16.8 19.1 18 (< 50) < 170 5 +8 to +9.5 > 14 15 18
BZT52C20-V WO 18.8 21.2 20 (< 50) < 220 5 +8 to +10 > 15 14 17
BZT52C22-V WP 20.8 23.3 25 (< 55) < 220 5 +8 to +10 > 17 13 16
BZT52C24-V WR 22.8 25.6 28 (< 80) < 220 5 +8 to +10 > 18 11 13
BZT52C27-V WS 25.1 28.9 30 (< 80) < 250 5 +8 to +10 > 20 10 12
BZT52C30-V WT 28 32 35 (< 80) < 250 5 +8 to +10 > 22.5 9 10
BZT52C33-V WU 31 35 40 (< 80) < 250 5 +8 to +10 > 25 8 9
BZT52C36-V WW 34 38 40 (< 90) < 250 5 +8 to +10 > 27 8 9
BZT52C39-V WX 37 41 50 (< 90) < 300 5 +10 to +12 > 29 7 8
BZT52C43-V WY 40 46 60 (< 100) < 700 5 +10 to +12 > 32 6 7
BZT52C47-V WZ 44 50 70 (< 100) < 750 5 +10 to +12 > 35 5 6
BZT52C51-V X1 48 54 70 (< 100) < 750 5 +10 to +12 > 38 5 6
BZT52C56-V X2 52 60
BZT52C62-V X3 58 66
BZT52C68-V X4 64 72
BZT52C75-V X5 70 79
I
= 5 mA, I
ZT1
(1)
Measured with pulses Tp = 5 ms
(2)
= I
ZT1
(3)
= I
ZT2
(4)
Valid provided that electrodes are kept at ambient temperature.
ZT2
= 2.5 mA
= 0.5 mA
= 1 mA
Zener Voltage
1)
Range
VZ @ I
ZT1
Dynamic Resistance Te st
rzj @ I
ZT1
rzj @ I
ZT2
Current
V Ω mA α
min max
< 135
< 150
< 200
< 250
(2)
(2)
(2)
(2)
< 1000
< 1000
< 1000
< 1500
(3)
(3)
(3)
(3)
I
2.5
2.5
2.5
2.5
ZT1
Te m p.
Coefficient
@ I
ZT1
VZ
(10-4/°C)
(2)
typ. +10
(2)
typ. +10
(2)
typ. +10
(2)
typ. +10
Reverse
Voltage
VR @ IR
100 nA,
Admissible Zener
=
T
45 °C,
Current
IZ @
amb
=
T
V mA
---
---
---
---
4)
IZ @
amb
25 °C,
=
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2
Document Number 85760
Rev. 1.5, 21-Apr-05
BZT52-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Marking
Code
BZT52B2V4-V W1 2.35 2.45 85 600 5 - 9 to - 4 - - -
BZT52B2V7-V W2 2.65 2.75 75 (< 83) < 500 5 - 9 to - 4 - 113 134
BZT52B3V0-V W3 2.94 3.06 80 (< 95) < 500 5 - 9 to - 3 - 98 118
BZT52B3V3-V W4 3.23 3.37 80 (< 95) < 500 5 - 8 to - 3 - 92 109
BZT52B3V6-V W5 3.53 3.67 80 (< 95) < 500 5 - 8 to - 3 - 85 100
BZT52B3V9-V W6 3.82 3.98 80 (< 95) < 500 5 - 7 to - 3 - 77 92
BZT52B4V3-V W7 4.21 4.39 80 (< 95) < 500 5 - 6 to - 1 - 71 84
BZT52B4V7-V W8 4.61 4.79 70 (< 78) < 500 5 - 5 to + 2 - 64 76
BZT52B5V1-V W9 5 5.2 30 (< 60) < 480 5 - 3 to + 4 > 0.8 56 67
BZT52B5V6-V WA 5.49 5.71 10 (< 40) < 400 5 - 2 to + 6 > 1 50 59
BZT52B6V2-V WB 6.08 6.32 4.8 (< 10) < 200 5 - 1 to + 7 > 2 45 54
BZT52B6V8-V WC 6.66 6.94 4.5 (< 8) < 150 5 + 2 to + 7 > 3 41 49
BZT52B7V5-V WD 7.35 7.65 4 (< 7) < 50 5 + 3 to + 7 > 5 37 44
BZT52B8V2-V WE 8.04 8.36 4.5 (< 7) < 50 5 + 4 to + 7 > 6 34 40
BZT52B9V1-V WF 8.92 9.28 4.8 (< 10) < 50 5 + 5 to + 8 > 7 30 36
BZT52B10-V WG 9.8 10.2 5.2 (< 15) < 70 5 + 5 to + 8 > 7.5 28 33
BZT52B11-V WH 10.8 11.2 6 (< 20) < 70 5 + 5 to + 9 > 8.5 25 30
BZT52B12-V WI 11.8 12.2 7 (< 20) < 90 5 + 6 to + 9 > 9 23 28
BZT52B13-V WK 12.7 13.3 9 (< 25) < 110 5 + 7 to + 9 > 10 21 25
BZT52B15-V WL 14.7 15.3 11 (< 30) < 110 5 + 7 to + 9 > 11 19 23
BZT52B16-V WM 15.7 16.3 13 (< 40) < 170 5 + 8 to + 9.5 > 12 17 20
BZT52B18-V WN 17.6 18.4 18 (< 50) < 170 5 + 8 to + 9.5 > 14 15 18
BZT52B20-V WO 19.6 20.4 20 (< 50) < 220 5 + 8 to + 10 > 15 14 17
BZT52B22-V WP 21.6 22.4 25 (< 55) < 220 5 + 8 to + 10 > 17 13 16
BZT52B24-V WR 23.5 24.5 28 (< 80) < 220 5 + 8 to + 10 > 18 11 13
BZT52B27-V WS 26.5 27.5 30 (< 80) < 250 5 + 8 to + 10 > 20 10 12
BZT52B30-V WT 29.4 30.6 35 (< 80) < 250 5 + 8 to + 10 > 22.5 9 10
BZT52B33-V WU 32.3 33.7 40 (< 80) < 250 5 + 8 to + 10 > 25 8 9
BZT52B36-V WW 35.3 36.7 40 (< 90) < 250 5 + 8 to + 10 > 27 8 9
BZT52B39-V WX 38.2 39.8 50 (< 90) < 300 5 + 10 to + 12 > 29 7 8
BZT52B43-V WY 42.1 43.9 60 (< 100) < 700 5 + 10 to + 12 > 32 6 7
BZT52B47-V WZ 46.1 47.9 70 (< 100) < 750 5 + 10 to + 12 > 35 5 6
BZT52B51-V X1 50 52 70 (< 100) < 750 5 + 10 to + 12 > 38 5 6
BZT52B56-V X2 54.9 57.1
BZT52B62-V X3 60.8 63.2
BZT52B68-V X4 66.6 69.4
BZT52B75-V X5 73.5 76.5
I
= 5 mA, I
ZT1
1)
Measured with pulses Tp = 5 ms
2)
= I
= 2.5 mA
ZT1
3)
= I
= 0.5 mA
ZT2
4)
Valid provided that electrodes are kept at ambient temperature.
ZT2
= 1 mA
Zener Voltage
1)
Range
VZ @ I
ZT1
Dynamic Resistance Te s t
rzj @ I
ZT1
rzj @ I
ZT2
Current
V Ω mA α
min max
< 135
< 150
< 200
< 250
(2)
(2)
(2)
(2)
< 1000
< 1000
< 1000
< 1500
(3)
(3)
(3)
(3)
I
2.5
2.5
2.5
2.5
ZT1
Te m p.
Coefficient
@ I
ZT1
VZ
(10-4/°C)
typ. + 10
typ. + 10
typ. + 10
typ. + 10
(2)
(2)
(2)
(2)
Reverse
Voltage
VR @ IR
100 nA,
Admissible Zener
=
T
45 °C,
Current
IZ @
amb
=
T
25 °C,
V mA
---
---
---
---
4)
IZ @
amb
=
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
3
BZT52-V-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
18114
Figure 1. Forward characteristics
18888
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
°C
18117
Figure 4. Dynamic Resistance vs. Zener Current
18118
Figure 5. Capacitance vs. Zener Voltage
18116
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
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4
18119
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85760
Rev. 1.5, 21-Apr-05
BZT52-V-Series
Vishay Semiconductors
°C
18120
Figure 7. Dynamic Resistance vs. Zener Current
°C/ W
18121
Figure 8. Thermal Differential Resistance vs. Zener Voltage
18135
=,
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
18124
Figure 11. Change of Zener Voltage vs. Junction Temperature
°C
18122
Figure 9. Dynamic Resistance vs. Zener Voltage
Document Number 85760
Rev. 1.5, 21-Apr-05
18136
Figure 12. Temperature Dependence of Zener Voltage vs. Zener
Voltage
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5
BZT52-V-Series
Vishay Semiconductors
18158
Figure 13. Change of Zener Voltage vs. Junction Temperature
18159
Figure 14. Change of Zener voltage from turn-on up to the point of
18160
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
thermal equilibrium vs. Zener voltage
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6
Document Number 85760
Rev. 1.5, 21-Apr-05
18111
BZT52-V-Series
Vishay Semiconductors
18112
Figure 16. Breakdown Characteristics
Figure 17. Breakdown Characteristics
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
7
BZT52-V-Series
Vishay Semiconductors
18157
Figure 18. Breakdown Characteristics
Package Dimensions in mm (Inches)
1.35 (0.053) max.
0.1 (0.004) max.
0.55 (0.022)
Cathode Band
3.85 (0.152)
3.55 (0.140)
1.70 (0.067)
1.40 (0.055)
2.85 (0.112)
2.55 (0.100)
0.25 (0.010) min.
Mounting Pad Layout
0.72 (0.028)
0.15 (0.006) max.
ISO Method E
2.40 (0.094)
1.40 (0.055)
17432
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8
Document Number 85760
Rev. 1.5, 21-Apr-05
BZT52-V-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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