VISHAY BZT52-V User Manual
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with
type designation AZ23 series and the dual zener
diode common cathode configuration in the SOT23 case with type designation DZ23 series.
• The Zener voltages are graded according to the
international E 24 standard.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
BZT52-V-Series
Vishay Semiconductors
17431
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Zener current see table "
Characteristics "
Power dissipation P
Power dissipation P
1)
Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2)
Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Thermal resistance junction to
ambient air
Junction temperature T
Storage temperature range T
1)
Valid provided that electrodes are kept at ambient temperature
tot
tot
R
thJA
J
S
2)
500
1)
410
1)
300
150 °C
- 65 to + 150 °C
mW
mW
°C/W
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
1
BZT52-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Marking
Code
BZT52C2V4-V W1 2.2 2.6 85 600 5 - 9 to - 4 - - -
BZT52C2V7-V W2 2.5 2.9 75 (< 83) < 500 5 - 9 to - 4 - 113 134
BZT52C3V0-V W3 2.8 3.2 80 (< 95) < 500 5 - 9 to - 3 - 98 118
BZT52C3V3-V W4 3.1 3.5 80 (< 95) < 500 5 - 8 to - 3 - 92 109
BZT52C3V6-V W5 3.4 3.8 80 (< 95) < 500 5 - 8 to - 3 - 85 100
BZT52C3V9-V W6 3.7 4.1 80 (< 95) < 500 5 - 7 to - 3 - 77 92
BZT52C4V3-V W7 4 4.6 80 (< 95) < 500 5 - 6 to - 1 - 71 84
BZT52C4V7-V W8 4.4 5 70 (< 78) < 500 5 - 5 to +2 - 64 76
BZT52C5V1-V W9 4.8 5.4 30 (< 60) < 480 5 - 3 to +4 > 0.8 56 67
BZT52C5V6-V WA 5.2 6 10 (< 40) < 400 5 - 2 to +6 > 1 50 59
BZT52C6V2-V WB 5.8 6.6 4.8 (< 10) < 200 5 - 1 to +7 > 2 45 54
BZT52C6V8-V WC 6.4 7.2 4.5 (< 8) < 150 5 +2 to +7 > 3 41 49
BZT52C7V5-V WD 7 7.9 4 (< 7) < 50 5 +3 to +7 > 5 37 44
BZT52C8V2-V WE 7.7 8.7 4.5 (< 7) < 50 5 +4 to +7 > 6 34 40
BZT52C9V1-V WF 8.5 9.6 4.8 (< 10) < 50 5 +5 to +8 > 7 30 36
BZT52C10-V WG 9.4 10.6 5.2 (< 15) < 70 5 +5 to +8 > 7.5 28 33
BZT52C11-V WH 10.4 11.6 6 (< 20) < 70 5 +5 to +9 > 8.5 25 30
BZT52C12-V WI 11.4 12.7 7 (< 20) < 90 5 +6 to +9 > 9 23 28
BZT52C13-V WK 12.4 14.1 9 (< 25) < 110 5 +7 to +9 > 10 21 25
BZT52C15-V WL 13.8 15.6 11 (< 30) < 110 5 +7 to +9 > 11 19 23
BZT52C16-V WM 15.3 17.1 13 (< 40) < 170 5 +8 to +9.5 > 12 17 20
BZT52C18-V WN 16.8 19.1 18 (< 50) < 170 5 +8 to +9.5 > 14 15 18
BZT52C20-V WO 18.8 21.2 20 (< 50) < 220 5 +8 to +10 > 15 14 17
BZT52C22-V WP 20.8 23.3 25 (< 55) < 220 5 +8 to +10 > 17 13 16
BZT52C24-V WR 22.8 25.6 28 (< 80) < 220 5 +8 to +10 > 18 11 13
BZT52C27-V WS 25.1 28.9 30 (< 80) < 250 5 +8 to +10 > 20 10 12
BZT52C30-V WT 28 32 35 (< 80) < 250 5 +8 to +10 > 22.5 9 10
BZT52C33-V WU 31 35 40 (< 80) < 250 5 +8 to +10 > 25 8 9
BZT52C36-V WW 34 38 40 (< 90) < 250 5 +8 to +10 > 27 8 9
BZT52C39-V WX 37 41 50 (< 90) < 300 5 +10 to +12 > 29 7 8
BZT52C43-V WY 40 46 60 (< 100) < 700 5 +10 to +12 > 32 6 7
BZT52C47-V WZ 44 50 70 (< 100) < 750 5 +10 to +12 > 35 5 6
BZT52C51-V X1 48 54 70 (< 100) < 750 5 +10 to +12 > 38 5 6
BZT52C56-V X2 52 60
BZT52C62-V X3 58 66
BZT52C68-V X4 64 72
BZT52C75-V X5 70 79
I
= 5 mA, I
ZT1
(1)
Measured with pulses Tp = 5 ms
(2)
= I
ZT1
(3)
= I
ZT2
(4)
Valid provided that electrodes are kept at ambient temperature.
ZT2
= 2.5 mA
= 0.5 mA
= 1 mA
Zener Voltage
1)
Range
VZ @ I
ZT1
Dynamic Resistance Te st
rzj @ I
ZT1
rzj @ I
ZT2
Current
V Ω mA α
min max
< 135
< 150
< 200
< 250
(2)
(2)
(2)
(2)
< 1000
< 1000
< 1000
< 1500
(3)
(3)
(3)
(3)
I
2.5
2.5
2.5
2.5
ZT1
Te m p.
Coefficient
@ I
ZT1
VZ
(10-4/°C)
(2)
typ. +10
(2)
typ. +10
(2)
typ. +10
(2)
typ. +10
Reverse
Voltage
VR @ IR
100 nA,
Admissible Zener
=
T
45 °C,
Current
IZ @
amb
=
T
V mA
---
---
---
---
4)
IZ @
amb
25 °C,
=
www.vishay.com
2
Document Number 85760
Rev. 1.5, 21-Apr-05
BZT52-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Marking
Code
BZT52B2V4-V W1 2.35 2.45 85 600 5 - 9 to - 4 - - -
BZT52B2V7-V W2 2.65 2.75 75 (< 83) < 500 5 - 9 to - 4 - 113 134
BZT52B3V0-V W3 2.94 3.06 80 (< 95) < 500 5 - 9 to - 3 - 98 118
BZT52B3V3-V W4 3.23 3.37 80 (< 95) < 500 5 - 8 to - 3 - 92 109
BZT52B3V6-V W5 3.53 3.67 80 (< 95) < 500 5 - 8 to - 3 - 85 100
BZT52B3V9-V W6 3.82 3.98 80 (< 95) < 500 5 - 7 to - 3 - 77 92
BZT52B4V3-V W7 4.21 4.39 80 (< 95) < 500 5 - 6 to - 1 - 71 84
BZT52B4V7-V W8 4.61 4.79 70 (< 78) < 500 5 - 5 to + 2 - 64 76
BZT52B5V1-V W9 5 5.2 30 (< 60) < 480 5 - 3 to + 4 > 0.8 56 67
BZT52B5V6-V WA 5.49 5.71 10 (< 40) < 400 5 - 2 to + 6 > 1 50 59
BZT52B6V2-V WB 6.08 6.32 4.8 (< 10) < 200 5 - 1 to + 7 > 2 45 54
BZT52B6V8-V WC 6.66 6.94 4.5 (< 8) < 150 5 + 2 to + 7 > 3 41 49
BZT52B7V5-V WD 7.35 7.65 4 (< 7) < 50 5 + 3 to + 7 > 5 37 44
BZT52B8V2-V WE 8.04 8.36 4.5 (< 7) < 50 5 + 4 to + 7 > 6 34 40
BZT52B9V1-V WF 8.92 9.28 4.8 (< 10) < 50 5 + 5 to + 8 > 7 30 36
BZT52B10-V WG 9.8 10.2 5.2 (< 15) < 70 5 + 5 to + 8 > 7.5 28 33
BZT52B11-V WH 10.8 11.2 6 (< 20) < 70 5 + 5 to + 9 > 8.5 25 30
BZT52B12-V WI 11.8 12.2 7 (< 20) < 90 5 + 6 to + 9 > 9 23 28
BZT52B13-V WK 12.7 13.3 9 (< 25) < 110 5 + 7 to + 9 > 10 21 25
BZT52B15-V WL 14.7 15.3 11 (< 30) < 110 5 + 7 to + 9 > 11 19 23
BZT52B16-V WM 15.7 16.3 13 (< 40) < 170 5 + 8 to + 9.5 > 12 17 20
BZT52B18-V WN 17.6 18.4 18 (< 50) < 170 5 + 8 to + 9.5 > 14 15 18
BZT52B20-V WO 19.6 20.4 20 (< 50) < 220 5 + 8 to + 10 > 15 14 17
BZT52B22-V WP 21.6 22.4 25 (< 55) < 220 5 + 8 to + 10 > 17 13 16
BZT52B24-V WR 23.5 24.5 28 (< 80) < 220 5 + 8 to + 10 > 18 11 13
BZT52B27-V WS 26.5 27.5 30 (< 80) < 250 5 + 8 to + 10 > 20 10 12
BZT52B30-V WT 29.4 30.6 35 (< 80) < 250 5 + 8 to + 10 > 22.5 9 10
BZT52B33-V WU 32.3 33.7 40 (< 80) < 250 5 + 8 to + 10 > 25 8 9
BZT52B36-V WW 35.3 36.7 40 (< 90) < 250 5 + 8 to + 10 > 27 8 9
BZT52B39-V WX 38.2 39.8 50 (< 90) < 300 5 + 10 to + 12 > 29 7 8
BZT52B43-V WY 42.1 43.9 60 (< 100) < 700 5 + 10 to + 12 > 32 6 7
BZT52B47-V WZ 46.1 47.9 70 (< 100) < 750 5 + 10 to + 12 > 35 5 6
BZT52B51-V X1 50 52 70 (< 100) < 750 5 + 10 to + 12 > 38 5 6
BZT52B56-V X2 54.9 57.1
BZT52B62-V X3 60.8 63.2
BZT52B68-V X4 66.6 69.4
BZT52B75-V X5 73.5 76.5
I
= 5 mA, I
ZT1
1)
Measured with pulses Tp = 5 ms
2)
= I
= 2.5 mA
ZT1
3)
= I
= 0.5 mA
ZT2
4)
Valid provided that electrodes are kept at ambient temperature.
ZT2
= 1 mA
Zener Voltage
1)
Range
VZ @ I
ZT1
Dynamic Resistance Te s t
rzj @ I
ZT1
rzj @ I
ZT2
Current
V Ω mA α
min max
< 135
< 150
< 200
< 250
(2)
(2)
(2)
(2)
< 1000
< 1000
< 1000
< 1500
(3)
(3)
(3)
(3)
I
2.5
2.5
2.5
2.5
ZT1
Te m p.
Coefficient
@ I
ZT1
VZ
(10-4/°C)
typ. + 10
typ. + 10
typ. + 10
typ. + 10
(2)
(2)
(2)
(2)
Reverse
Voltage
VR @ IR
100 nA,
Admissible Zener
=
T
45 °C,
Current
IZ @
amb
=
T
25 °C,
V mA
---
---
---
---
4)
IZ @
amb
=
Document Number 85760
Rev. 1.5, 21-Apr-05
www.vishay.com
3
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