VISHAY BZM55B... Technical data

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Silicon Epitaxial Planar Z–Diodes

Features

D

Saving space

D

Hermetic sealed parts

D

Fits onto SOD 323 / SOT 23 footprints

D

Electrical data identical with the devices
BZT55B... / TZMB...

D

Very sharp reverse characteristic

D

Low reverse current level

D

Very high stability

D

Low noise

D

Available with tighter tolerances

D

V

–tolerance ± 2%

Z

BZM55B...

Vishay Telefunken

96 12315

Applications

Voltage stabilization

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Power dissipation
Z–current I
Junction temperature T
Storage temperature range T

R

thJA

x

300K/W

P

V

Z

j

stg

500 mW

PV/V

Z

175

–65...+175

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1 R
Junction tie point 35mm copper clad, 0.9 mm2 copper area per electrode R

thJA
thJL

500 K/W
300 K/W

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=200mA V

F

mA

°
°

1.5 V

C
C

Document Number 85597
Rev. 3, 01-Apr-99 1 (6)

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BZM55B...

Vishay Telefunken

Type V

BZM55B...

ZnomIZT

V mA V

for VZT and r

r

zjT

W W

at I

zjk

ZK IR

mA

and IR at V

m

A

2)

m

A

R

TK

V %/K
2V4 2.4 5 2.35 to 2.45 < 85 < 600 1 < 100 < 50 1 –0.09 to –0.06
2V7 2.7 5 2.64 to 2.76 < 85 < 600 1 < 10 < 50 1 –0.09 to –0.06
3V0 3.0 5 2.94 to 3.06 < 90 < 600 1 < 4 < 40 1 –0.08 to –0.05
3V3 3.3 5 3.24 to 3.36 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3V6 3.6 5 3.52 to 3.68 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
3V9 3.9 5 3.82 to 3.98 < 90 < 600 1 < 2 < 40 1 –0.08 to –0.05
4V3 4.3 5 4.22 to 4.38 < 90 < 600 1 < 1 < 20 1 –0.06 to –0.03
4V7 4.7 5 4.60 to 4.80 < 80 < 600 1 < 0.5 < 10 1 –0.05 to +0.02
5V1 5.1 5 5.00 to 5.20 < 60 < 550 1 < 0.1 < 2 1 –0.02 to +0.02
5V6 5.6 5 5.48 to 5.72 < 40 < 450 1 < 0.1 < 2 1 –0.05 to +0.05
6V2 6.2 5 6.08 to 6.32 < 10 < 200 1 < 0.1 < 2 2 0.03 to 0.06
6V8 6.8 5 6.66 to 6.94 < 8 < 150 1 < 0.1 < 2 3 0.03 to 0.07
7V5 7.5 5 7.35 to 7.65 < 7 < 50 1 < 0.1 < 2 5 0.03 to 0.07
8V2 8.2 5 8.04 to 8.36 < 7 < 50 1 < 0.1 < 2 6.2 0.03 to 0.08
9V1 9.1 5 8.92 to 9.28 < 10 < 50 1 < 0.1 < 2 6.8 0.03 to 0.09

10 10 5 9.80 to 10.20 < 15 < 70 1 < 0.1 < 2 7.5 0.03 to 0.1
11 11 5 10.78 to 11.22 < 20 < 70 1 < 0.1 < 2 8.2 0.03 to 0.11
12 12 5 11.76 to 12.24 < 20 < 90 1 < 0.1 < 2 9.1 0.03 to 0.11
13 13 5 12.74 to 13.26 < 26 < 110 1 < 0.1 < 2 10 0.03 to 0.11
15 15 5 14.70 to 15.30 < 30 < 110 1 < 0.1 < 2 11 0.03 to 0.11
16 16 5 15.70 to 16.30 < 40 < 170 1 < 0.1 < 2 12 0.03 to 0.11
18 18 5 17.64 to 18.36 < 50 < 170 1 < 0.1 < 2 13 0.03 to 0.11
20 20 5 19.60 to 20.40 < 55 < 220 1 < 0.1 < 2 15 0.03 to 0.11
22 22 5 21.55 to 22.45 < 55 < 220 1 < 0.1 < 2 16 0.04 to 0.12
24 24 5 23.5 to 24.5 < 80 < 220 1 < 0.1 < 2 18 0.04 to 0,12
27 27 5 26.4 to 27.6 < 80 < 220 1 < 0.1 < 2 20 0.04 to 0.12
30 30 5 29.4 to 30.6 < 80 < 220 1 < 0.1 < 2 22 0.04 to 0.12
33 33 5 32.4 to 33.6 < 80 < 220 1 < 0.1 < 2 24 0.04 to 0.12
36 36 5 35.3 to 36.7 < 80 < 220 1 < 0.1 < 2 27 0.04 to 0.12
39 39 2.5 38.2 to 39.8 < 90 < 500 1 < 0.1 < 5 30 0.04 to 0.12
43 43 2.5 42.1 to 43.9 < 90 < 600 0.5 < 0.1 < 5 33 0.04 to 0.12
47 47 2.5 46.1 to 47.9 < 110 < 700 0.5 < 0.1 < 5 36 0.04 to 0.12
51 51 2.5 50.0 to 52.0 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12
56 56 2.5 54.9 to 57.1 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12
62 62 2.5 60.8 to 63.2 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12
68 68 2.5 66.6 to 69.4 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12
75 75 2.5 73.5 to 76.5 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12

VZ

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Rev. 3, 01-Apr-992 (6)

Characteristics (Tj = 25_C unless otherwise specified)

)

BZM55B...

Vishay Telefunken

tot

P – Total Power Dissipation ( mW )

95 9602

Z

V – Voltage Change ( mV )

D

600

500

400

300

200

100

0

0 40 80 120 160

T

– Ambient Temperature ( °C )

amb

Total Power Dissipation vs.

Ambient Temperature

1000

Tj=25°C

100

IZ=5mA

10

200

200

150

100

50

D

C – Diode Capacitance ( pF )

0

0 5 10 15

95 9601

VZ – Z-Voltage ( V )

Diode Capacitance vs. Z–Voltage

1.3
V

Ztn=VZt/VZ

1.2

1.1

1.0

Ztn

0.9

V – Relative Voltage Change

(25°C)

TKVZ=10 10–4/K

VR=2V

Tj=25°C

20

8 10
6 10–4/K

4 10–4/K
2 10

0

–2 10
–4 10–4/K

25

–4

/K

–4

/K

–4

/K

1

0 5 10 15 20

95 9598

VZ – Z-Voltage ( V )

Typical Change of W orking Voltage

under Operating Conditions at T

15

–4

Z

10

amb

25

=25°C

0.8

–60 0 60 120 180

95 9599

Tj – Junction Temperature ( °C )

Typical Change of W orking Voltage vs.

Junction Temperature

100

10

240

Tj=25°C

1

5

IZ=5mA

0

0.1

F

I – Forward Current ( mA )

0.01

VZ

–5

TK – Temperature Coefficient of V ( 10 /K

0102030

95 9600

VZ – Z-Voltage ( V )

Temperature Coefficient of Vz vs. Z–Voltage

40

50

95 9605

0.001
0 0.2 0.4 0.6 0.8

VF – Forward Voltage ( V )

Forward Current vs. Forward Voltage

1.0

Document Number 85597

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Rev. 3, 01-Apr-99 3 (6)

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Vishay Telefunken

Z

I – Z-Current ( mA )

95 9604

Z

I – Z-Current ( mA )

100

80

P

tot

T

amb

60

40

20

0

04 81216

VZ – Z-Voltage ( V )

Z–Current vs. Z–Voltage

50

P

=500mW

40

30

20

10

tot

T

=25°C

amb

=500mW

=25°C

1000

W

IZ=1mA

100

5mA

10mA

10

Z

r – Differential Z-Resistance ( )

20

95 9606

0 5 10 15 20

VZ – Z-Voltage ( V )

1

Tj=25°C

25

Differential Z–Resistance vs. Z–Voltage

0

15 20 25 30

95 9607

VZ – Z-Voltage ( V )

Z–Current vs. Z–Voltage

1000

tp/T=0.5

100

tp/T=0.2

10

tp/T=0.1

tp/T=0.02

tp/T=0.05

1

thp

Z – Thermal Resistance for Pulse Cond. (K/W)

–1

10

Thermal Response

10

0

tp/T=0.01

35

Single Pulse

1

10

iZM=(–VZ+(V

2

+4rzjDT/Z

Z

R

=300K/W

thJA

D

T=T

jmax–Tamb

1/2

)

)/(2rzj)

thp

2

10

tp – Pulse Length ( ms )95 9603

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Rev. 3, 01-Apr-994 (6)

BZM55B...

Vishay Telefunken

25

95 10329

0.152

10

Board for R

Reflow Soldering

1.2

0.71 1.3

0.355

2.5

24

definition (in mm)

thJA

1.27

95 10330

9.9

Wave Soldering

1.4

0.7 0.7

1.4

2.8

Recommended foot pads (in mm)

95 10331

0.6 0.6

1.2

2.4

Recommended foot pads (in mm)

Dimensions in mm

96 12072

Document Number 85597
Rev. 3, 01-Apr-99 5 (6)

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BZM55B...

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

www.vishay.de • FaxBack [phone] Document Number 85597

Rev. 3, 01-Apr-996 (6)