Zener Diodes
Features
• Glass passivated junction
• High reliability
• Voltage range 10 V to 270 V
• Fits onto 5 mm SMD footpads
• Wave and reflow solderable
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
BZG03C-Series
Vishay Semiconductors
15811
Applications
Voltage stabilization
Mechanical Data
Case: DO-214AC
Weight: approx. 77 mg
Packaging Codes/Options:
TR / 1.5 k 7 " reel
TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Power dissipation R
Non repetitive peak surge power
dissipation
Junction temperature T
Storage temperature range T
< 25 K/W, T
thJA
R
< 100 K/W, T
thJA
t
= 100 µs sq.pulse, Tj = 25 °C
p
prior to surge
= 100 °C P
amb
= 50 °C P
amb
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction lead R
Junction ambient mounted on epoxy-glass hard
tissue, Fig. 1a
mounted on epoxy-glass hard
tissue, Fig. 1b
mounted on Al-oxid-ceramic
(Al
), Fig. 1b
2O3
P
diss
diss
ZSM
stg
R
R
R
j
thJL
thJA
thJA
thJA
3W
1.25 W
600 W
150 °C
- 65 to + 150 °C
25 K/W
150 K/W
125 K/W
100 K/W
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Document Number 85593
Rev. 1.7, 15-Sep-05
= 0.5 A V
F
F
1.2 V
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BZG03C-Series
Vishay Semiconductors
Electrical Characteristics
BZG03C...
Partnumber Zener Voltage Range Dynamic Resistance Te s t
Current
VZ @ I
ZT
V Ω mA %/K µA V
min typ max typ max min max max
BZG03C10 9.4 10 10.6 2 4 50 0.05 0.09 10 7.5
BZG03C11 10.4 11 11.6 4 7 50 0.05 0.1 4 8.2
BZG03C12 11.4 12 12.7 4 7 50 0.05 0.1 3 9.1
BZG03C13 12.4 13 14.1 5 10 50 0.05 0.1 2 10
BZG03C15 13.8 15 15.6 5 10 50 0.05 0.1 1 11
BZG03C16 15.3 16 17.1 6 15 25 0.06 0.11 1 12
BZG03C18 16.8 18 19.1 6 15 25 0.06 0.11 1 13
BZG03C20 18.8 20 21.2 6 15 25 0.06 0.11 1 15
BZG03C22 20.8 22 23.3 6 15 25 0.06 0.11 1 16
BZG03C24 22.8 24 25.6 7 15 25 0.06 0.11 1 18
BZG03C27 25.1 27 28.9 7 15 25 0.06 0.11 1 20
BZG03C30 28 30 32 8 15 25 0.06 0.11 1 22
BZG03C33 31 33 35 8 15 25 0.06 0.11 1 24
BZG03C36 34 36 38 21 40 10 0.06 0.11 1 27
BZG03C39 37 39 41 21 40 10 0.06 0.11 1 30
BZG03C43 40 43 46 24 45 10 0.07 0.12 1 33
BZG03C47 44 47 50 24 45 10 0.07 0.12 1 36
BZG03C51 48 51 54 25 60 10 0.07 0.12 1 39
BZG03C56 52 56 60 25 60 10 0.07 0.12 1 43
BZG03C62 58 62 66 25 80 10 0.08 0.13 1 47
BZG03C68 64 68 72 25 80 10 0.08 0.13 1 51
BZG03C75 70 75 79 30 100 10 0.08 0.13 1 56
BZG03C82 77 82 87 30 100 10 0.08 0.13 1 62
BZG03C91 85 91 96 60 200 5 0.09 0.13 1 68
BZG03C100 94 100 106 60 200 5 0.09 0.13 1 75
BZG03C110 104 110 116 80 250 5 0.09 0.13 1 82
BZG03C120 114 120 127 80 250 5 0.09 0.13 1 91
BZG03C130 124 130 141 110 300 5 0.09 0.13 1 100
BZG03C150 138 150 156 130 300 5 0.09 0.13 1 110
BZG03C160 158 160 171 150 350 5 0.09 0.13 1 120
BZG03C180 168 180 191 180 400 5 0.09 0.13 1 130
BZG03C200 188 200 212 200 500 5 0.09 0.13 1 150
BZG03C220 208 220 233 350 750 2 0.09 0.13 1 160
BZG03C240 228 240 256 400 850 2 0.09 0.13 1 180
BZG03C270 251 270 289 450 1000 2 0.09 0.13 1 200
rzj and TKVZ @ I
ZT
I
ZT
Temperature
Coefficient of Zener
Voltage
TKVZ@ I
ZT
Reverse Leakage
Current
IR @ V
R
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Document Number 85593
Rev. 1.7, 15-Sep-05
BZG03C-Series
W
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
a) b)
2.0
1.5
25.0
94 9313
Figure 1. Boards for R
thJA
4
3
2
R
=100K/W
thJA
1
tot
P –Total PowerDissipation(W )
0
0
40 80 120 160
T
94 9580
– Ambient Temperature(°C )
amb
5.0
2.0
10.0
1.0
25.0
definition (copper overlay 35µ)
R
=25K/W
thJA
200
3.0
2.5
2.0
1.5
1.0
F
I – Forward Current (A )
0.5
0
0 0.5 1.0 1.5
94 9581
VF– Forward Voltage(V)
Figure 3. Forward Current vs. Forward Voltage
10000
1000
100
Dissipation (W)
ZSM
P – Non-Repetitive Surge Power
10
0.01 0.1 1 10
94 9582
tp– Pulse Length ( ms )
2.0
100
Figure 2. Total Power Dissipation vs. Ambient Temperature
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
1000
100
tp/T=0.5
tp/T=0.2
10
tp/T=0.1
tp/T=0.05
tp/T=0.02
1
thp
–5
10
Z –Thermal Resistance for Pulse Cond.(K/
94 9583
10
–4
10
–3
tp/T=0.01
10
–2
10
–1
tp– Pulse Length(s)
10
0
10
1
10
2
Figure 5. Thermal Response
Document Number 85593
Rev. 1.7, 15-Sep-05
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3
BZG03C-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
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4
19628
Document Number 85593
Rev. 1.7, 15-Sep-05
BZG03C-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85593
Rev. 1.7, 15-Sep-05
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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