VISHAY BYV28 User Manual

Ultra Fast Avalanche Sinterglass Diode

Features

• Controlled avalanche characteristic

• Low forward voltage

• Ultra fast recovery time

• Glass passivated junction

• Hermetically sealed package

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Applications

Very fast rectification e.g. for switch mode power sup­ply

e2

Mechanical Data

Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg

BYV28/...

Vishay Semiconductors

949588

Parts Table

Part Type differentiation Package

BYV28-50 V

BYV28-100 V

BYV28-150 V

BYV28-200 V

= 50 V; I

R

= 100 V; I

R

= 150 V; I

R

= 200 V; I

R

= 3.5 A SOD-64

FAV

= 3.5 A SOD-64

FAV

= 3.5 A SOD-64

FAV

= 3.5 A SOD-64

FAV

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Part Symbol Val ue Unit

Peak reverse voltage, non
repetitive

Reverse voltage = Repetitive
peak reverse voltage

Peak forward surge current t

Repetitive peak forward current I

Average forward current I

Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)

Junction and storage
temperature range

see electrical characteristics BYV28/50 V

BYV28/100 V

BYV28/150 V

BYV28/200 V

see electrical characteristics BYV28/50 V

BYV28/100 V

BYV28/150 V

BYV28/200 V

= 10 ms, half sinewave I

p

I

= 1 A, Tj = 175 °C E

(BR)R

R

R

R

R

T

RSM

RSM

RSM

RSM

= V

= V

= V

= V

FSM

FRM

FAV

= T

j

R

RRM

RRM

RRM

RRM

stg

55 V

110 V

165 V

220 V

50 V

100 V

150 V

200 V

90 A

25 A

3.5 A

20 mJ

- 55 to + 175 °C

Document Number 86044

Rev. 1.6, 14-Apr-05

www.vishay.com

1

BYV28/...

Vishay Semiconductors

Maximum Thermal Resistance

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Junction ambient l = 10 mm, T

on PC board with spacing
25 mm

= constant R

L

thJA

R

thJA

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Reverse recovery time I

= 5 A V

F

I

= 5 A, Tj = 175 °C V

F

= V

R

RRM

V

RSM

V

= V

R

= 0.5 A, IR = 1 A, iR = 0.25 A t

F

, Tj = 165 °C I

RRM

F

F

I

R

I

R

R

rr

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

25 K/W

70 K/W

1.1 V

0.89 V

1 µA

100 µA

150 µA

30 ns

40

30

20

ll

10

TL= constant

0

thJA

R –Therm.Resist. Junction/ Ambient ( K/W)

94 9548

0 5 10 15 25

20

l – Lead Length ( mm )

30

Figure 1. Max. Thermal Resistance vs. Lead Length

100.000

10.000

Tj=175°C

F

I – Forward Current (A)

1.000

0.100

0.010

Tj=25°C

4.0

3.5

3.0

2.5

2.0

1.5

R

70 K/W

≤

thJA

1.0
PCB:d=25mm

0.5

FAV

I –Average Forward Current( A )

0.0

0 20 40 60 80 100 120 140 160 180

T

16454

– Ambient Temperature( °C )

amb

VR=V

RRM

half sinewave

≤

R

25 K/W

thJA

l=10mm

Figure 3. Max. Average Forward Current vs. Ambient Temperature

1000

VR=V

RRM

100

10

R

I – Reverse Current (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

16453

Figure 2. Forward Current vs. Forward Voltage

www.vishay.com

2

VF– Forward Voltage(V)

1

25 50 75 100 125 150 175

16455

Tj– Junction Temperature ( ° C )

Figure 4. Reverse Current vs. Junction Temperature

Document Number 86044

Rev. 1.6, 14-Apr-05