VISHAY BYV28 User Manual

Ultra Fast Avalanche Sinterglass Diode

Features

• Controlled avalanche characteristic

• Low forward voltage

• Ultra fast recovery time

• Glass passivated junction

• Hermetically sealed package

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Applications

Very fast rectification e.g. for switch mode power sup­ply

e2

Mechanical Data

Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg

BYV28/...

Vishay Semiconductors

949588

Parts Table

Part Type differentiation Package

BYV28-50 V

BYV28-100 V

BYV28-150 V

BYV28-200 V

= 50 V; I

R

= 100 V; I

R

= 150 V; I

R

= 200 V; I

R

= 3.5 A SOD-64

FAV

= 3.5 A SOD-64

FAV

= 3.5 A SOD-64

FAV

= 3.5 A SOD-64

FAV

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Part Symbol Val ue Unit

Peak reverse voltage, non
repetitive

Reverse voltage = Repetitive
peak reverse voltage

Peak forward surge current t

Repetitive peak forward current I

Average forward current I

Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)

Junction and storage
temperature range

see electrical characteristics BYV28/50 V

BYV28/100 V

BYV28/150 V

BYV28/200 V

see electrical characteristics BYV28/50 V

BYV28/100 V

BYV28/150 V

BYV28/200 V

= 10 ms, half sinewave I

p

I

= 1 A, Tj = 175 °C E

(BR)R

R

R

R

R

T

RSM

RSM

RSM

RSM

= V

= V

= V

= V

FSM

FRM

FAV

= T

j

R

RRM

RRM

RRM

RRM

stg

55 V

110 V

165 V

220 V

50 V

100 V

150 V

200 V

90 A

25 A

3.5 A

20 mJ

- 55 to + 175 °C

Document Number 86044

Rev. 1.6, 14-Apr-05

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BYV28/...

Vishay Semiconductors

Maximum Thermal Resistance

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Junction ambient l = 10 mm, T

on PC board with spacing
25 mm

= constant R

L

thJA

R

thJA

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Reverse recovery time I

= 5 A V

F

I

= 5 A, Tj = 175 °C V

F

= V

R

RRM

V

RSM

V

= V

R

= 0.5 A, IR = 1 A, iR = 0.25 A t

F

, Tj = 165 °C I

RRM

F

F

I

R

I

R

R

rr

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

25 K/W

70 K/W

1.1 V

0.89 V

1 µA

100 µA

150 µA

30 ns

40

30

20

ll

10

TL= constant

0

thJA

R –Therm.Resist. Junction/ Ambient ( K/W)

94 9548

0 5 10 15 25

20

l – Lead Length ( mm )

30

Figure 1. Max. Thermal Resistance vs. Lead Length

100.000

10.000

Tj=175°C

F

I – Forward Current (A)

1.000

0.100

0.010

Tj=25°C

4.0

3.5

3.0

2.5

2.0

1.5

R

70 K/W

≤

thJA

1.0
PCB:d=25mm

0.5

FAV

I –Average Forward Current( A )

0.0

0 20 40 60 80 100 120 140 160 180

T

16454

– Ambient Temperature( °C )

amb

VR=V

RRM

half sinewave

≤

R

25 K/W

thJA

l=10mm

Figure 3. Max. Average Forward Current vs. Ambient Temperature

1000

VR=V

RRM

100

10

R

I – Reverse Current (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

16453

Figure 2. Forward Current vs. Forward Voltage

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2

VF– Forward Voltage(V)

1

25 50 75 100 125 150 175

16455

Tj– Junction Temperature ( ° C )

Figure 4. Reverse Current vs. Junction Temperature

Document Number 86044

Rev. 1.6, 14-Apr-05

BYV28/...

Vishay Semiconductors

60

50

40

30

20

10

R

0

P – Reverse Power Dissipation ( mW)

25 50 75 100 125 150 175

16456

Tj– Junction Temperature ( °C )

@100 % V

PR–Limit

@80%V

VR=V

PR–Limit

R

RRM

R

Figure 5. Max. Reverse Power Dissipation vs. Junction

Temperature

Package Dimensions in mm (Inches)

Sintered Glass Case
SOD-64

CathodeIdentification

16457

4.3 (0.168) max.

250

f=1MHz

200

150

100

50

D

C – Diode Capacitance ( pF )

0

0.1 1.0 10.0 100.0

VR– Reverse Voltage(V)

Figure 6. Diode Capacitance vs. Reverse Voltage

ISO Method E

1.35 (0.053) max.

26(1.014) min. 26 (1.014) min.

Document Number 86044

Rev. 1.6, 14-Apr-05

4.0 (0.156) max.

94 9587

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BYV28/...

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Document Number 86044

Rev. 1.6, 14-Apr-05

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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