Ultra Fast Avalanche Sinterglass Diode
Features
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e2
BYV27/...
Vishay Semiconductors
949539
Applications
Very fast rectification diode e.g. for switch mode
power supply
Terminals: Plated axial leads, solderable per MILSTD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Mechanical Data
Weight: approx. 369 mg
Case: SOD-57 Sintered glass case
Parts Table
Part Type differentiation Package
BYV27-50 V
BYV27-100 V
BYV27-150 V
BYV27-200 V
= 50 V; I
R
= 100 V; I
R
= 150 V; I
R
= 200 V; I
R
= 2 A SOD-57
FAV
= 2 A SOD-57
FAV
= 2 A SOD-57
FAV
= 2 A SOD-57
FAV
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Val ue Unit
Peak reverse voltage, non
repetitive
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current t
Repetitive peak forward current I
see electrical characteristics BYV27-50 V
BYV27-100 V
BYV27-150 V
BYV27-200 V
see electrical characteristics BYV27-50 V
BYV27-100 V
BYV27-150 V
BYV27-200 V
= 10 ms, half sinewave I
p
R
R
R
R
RSM
RSM
RSM
RSM
= V
= V
= V
= V
FSM
FRM
RRM
RRM
RRM
RRM
55 V
110 V
165 V
220 V
50 V
100 V
150 V
200 V
50 A
15 A
Document Number 86042
Rev. 1.6, 21-Jun-05
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1
BYV27/...
Vishay Semiconductors
Parameter Test condition Part Symbol Value Unit
Average forward current I
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
Junction and storage
temperature range
Maximum Thermal Resistance
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction ambient l = 10 mm, T
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Reverse recovery time I
I
= 1 A, Tj = 175 °C E
(BR)R
= constant R
L
on PC board with spacing
25 mm
= 3 A V
F
I
= 3 A, Tj = 175 °C V
F
= V
R
RRM
V
RSM
V
= V
, T
R
= 0.5 A, IR = 1 A, iR = 0.25 A t
F
= 165 °C I
RRM
j
thJA
R
thJA
F
F
I
R
I
R
R
rr
FAV
R
T
= T
j
stg
2A
20 mJ
- 55 to + 175 °C
45 K/W
100 K/W
1.07 V
0.88 V
1 µA
100 µA
150 µA
25 ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
100
80
60
40
20
0
thJA
R –Therm.Resist.Junction / Ambient ( K/W)
94 9526
Figure 1. Typ. Thermal Resistance vs. Lead Length
ll
TL= constant
0
51015 25
l – Lead Length ( mm )
20
30
100.000
I – Forward Current (A)
16382
10.000
F
Tj= 175 °C
1.000
0.100
0.010
0.001
0.0 0.5 1.0 1.5 2.0 2.5
Tj=25°C
VF– Forward Voltage(V)
Figure 2. Forward Current vs. Forward Voltage
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2
Document Number 86042
Rev. 1.6, 21-Jun-05
BYV27/...
Vishay Semiconductors
2.5
2.0
1.5
1.0
0.5
R
= 100 K/W
thJA
PCB:d=25mm
0.0
0 20 40 60 80 100 120 140 160 180
T
– Ambient Temperature (°C )
amb
16383
FAV
I –Average Forward Current( A )
VR=V
RRM
half sinewave
R
=45K/W
thJA
l=10mm
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
VR=V
RRM
100
10
R
I – Reverse Current (A)
70
60
50
40
30
20
10
R
P – Reverse Power Dissipation ( mW)
0
25 50 75 100 125 150 175
16385
Tj– Junction Temperature ( °C )
@80%V
@100 % V
PR–Limit
VR=V
PR–Limit
R
RRM
R
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
100
f=1MHz
80
60
40
20
D
C – Diode Capacitance ( pF )
1
25 50 75 100 125 150 175
16384
Tj– Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
26(1.014) min.
CathodeIdentification
4.0 (0.156) max.
16386
3.6 (0.140)max.
26(1.014) min.
0
0.1 1.0 10.0 100.0
VR– Reverse Voltage(V)
Figure 6. Diode Capacitance vs. Reverse Voltage
94 9538
ISO Method E
0.82 (0.032) max.
Document Number 86042
Rev. 1.6, 21-Jun-05
www.vishay.com
3
BYV27/...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 86042
Rev. 1.6, 21-Jun-05
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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