VISHAY BYV27 User Manual

Ultra Fast Avalanche Sinterglass Diode

Features

• Controlled avalanche characteristic

• Low forward voltage

• Ultra fast recovery time

• Glass passivated junction

• Hermetically sealed package

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

e2

BYV27/...

Vishay Semiconductors

949539

Applications

Very fast rectification diode e.g. for switch mode
power supply

Terminals: Plated axial leads, solderable per MIL­STD-750, Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any

Mechanical Data

Weight: approx. 369 mg

Case: SOD-57 Sintered glass case

Parts Table

Part Type differentiation Package

BYV27-50 V

BYV27-100 V

BYV27-150 V

BYV27-200 V

= 50 V; I

R

= 100 V; I

R

= 150 V; I

R

= 200 V; I

R

= 2 A SOD-57

FAV

= 2 A SOD-57

FAV

= 2 A SOD-57

FAV

= 2 A SOD-57

FAV

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Part Symbol Val ue Unit

Peak reverse voltage, non
repetitive

Reverse voltage = Repetitive
peak reverse voltage

Peak forward surge current t

Repetitive peak forward current I

see electrical characteristics BYV27-50 V

BYV27-100 V

BYV27-150 V

BYV27-200 V

see electrical characteristics BYV27-50 V

BYV27-100 V

BYV27-150 V

BYV27-200 V

= 10 ms, half sinewave I

p

R

R

R

R

RSM

RSM

RSM

RSM

= V

= V

= V

= V

FSM

FRM

RRM

RRM

RRM

RRM

55 V

110 V

165 V

220 V

50 V

100 V

150 V

200 V

50 A

15 A

Document Number 86042

Rev. 1.6, 21-Jun-05

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BYV27/...

Vishay Semiconductors

Parameter Test condition Part Symbol Value Unit

Average forward current I

Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)

Junction and storage
temperature range

Maximum Thermal Resistance

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Junction ambient l = 10 mm, T

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Reverse recovery time I

I

= 1 A, Tj = 175 °C E

(BR)R

= constant R

L

on PC board with spacing
25 mm

= 3 A V

F

I

= 3 A, Tj = 175 °C V

F

= V

R

RRM

V

RSM

V

= V

, T

R

= 0.5 A, IR = 1 A, iR = 0.25 A t

F

= 165 °C I

RRM

j

thJA

R

thJA

F

F

I

R

I

R

R

rr

FAV

R

T

= T

j

stg

2A

20 mJ

- 55 to + 175 °C

45 K/W

100 K/W

1.07 V

0.88 V

1 µA

100 µA

150 µA

25 ns

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

120

100

80

60

40

20

0

thJA

R –Therm.Resist.Junction / Ambient ( K/W)

94 9526

Figure 1. Typ. Thermal Resistance vs. Lead Length

ll

TL= constant

0

51015 25

l – Lead Length ( mm )

20

30

100.000

I – Forward Current (A)

16382

10.000

F

Tj= 175 °C

1.000

0.100

0.010

0.001

0.0 0.5 1.0 1.5 2.0 2.5

Tj=25°C

VF– Forward Voltage(V)

Figure 2. Forward Current vs. Forward Voltage

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Document Number 86042

Rev. 1.6, 21-Jun-05