VISHAY BY203-12S, BY203-16S, BY203-20S Technical data

Fast Avalanche Sinterglass Diode

Features

• Glass passivated junction

• Hermetically sealed package

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Applications

Fast rectification and switching avalanche sinterglass
diode for TV-line output circuits and switch mode
power supply

e2

BY203-12S / 16S / 20S

Vishay Semiconductors

949539

Mechanical Data

Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg

MIL-STD-750, Method 2026

Parts Table

Par t Type differentiation Package

BY203-12S V

BY203-16S V

BY203-20S V

= 1200 V; I

R

= 1600 V; I

R

= 2000 V; I

R

= 250 mA SOD-57

FAV

= 250 mA SOD-57

FAV

= 250 mA SOD-57

FAV

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Part Symbol Val ue Unit

Reverse voltage = Repetitive
peak reverse voltage

Average forward current I

Peak forward surge current t

Junction temperature range T

Storage temperature range T

Non repetitive reverse
avalanche energy

= 100 µA BY203-12S VR = V

I

R

BY203-16S V

BY203-20S V

= 10 ms half sinewave I

p

I

= 0.4 A E

(BR)R

R

R

= V

= V

FAV

FSM

stg

j

R

RRM

RRM

RRM

1200 V

1600 V

2000 V

250 mA

20 A

-55 to +150 °C

-55 to +175 °C

10 mJ

Maximum Thermal Resistance

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Junction ambient l = 10 mm, T

maximum lead length R

Document Number 86002

Rev. 1.7, 13-Apr-05

= constant R

L

thJA

thJA

45 K/W

100 K/W

www.vishay.com

1

BY203-12S / 16S / 20S

ge(V)

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parame te r Test condition Par t Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

Breakdown voltage I

= 200 mA, tp/T = 0.01,

F

= 0.3 ms

t

p

= 700 V BY203-12S I

R

V

= 1000 V BY203-16S I

R

V

= 1200 V BY203-20S I

R

= 100 µA, tp/T = 0.01,

R

= 0.3 ms

t

p

BY203-12S V

BY203-16S V

BY203-20S V

Reverse recovery time I

= 0.5 A, IR = 1 A, iR = 0.25 A t

F

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

240

°

200

160

120

80

j

40

T – Junction Temperature ( C )

BY203/12

BY203/16

V

RRM

V

R

BY203/20

0

1600

94 9080

0 400 800 1200
VR,V

– Reverse / Repetitive Peak Reverse

RRM

Volta

Figure 1. Junction Temperature vs. Reverse/Repetitive Peak

Reverse Voltage

0.30

0.25

0.20

0.15

0.10

0.05

FAV

I –Average ForwardCurrent ( A )

0.00

16398

Figure 3. Max. Average Forward Current vs. Ambient Temperature

V

F

R

R

R

(BR)

(BR)

(BR)

VR=V

half sinewave

0 30 60 90 120 150

T

amb

1200 V

1600 V

2000 V

rr

R

thJA

l=10mm

R

=100K/W

thJA

PCB: d=25mm

RRM

– Ambient Temperature (°C )

2.4 V

2 µA

2 µA

2 µA

300 ns

=45K/W

10.000

1.000

0.100

0.010

F

I – Forward Current ( A)

0.001

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

16397

Figure 2. Forward Current vs. Forward Voltage

www.vishay.com

2

Tj=175°C

VF– Forward Voltage(V)

Tj=25°C

1000

VR=V

RRM

100

10

R

I – Reverse Current (µA)

1

25 50 75 100 125 150

16399

Tj– Junction Temperature (°C )

Figure 4. Reverse Current vs. Junction Temperature

Document Number 86002

Rev. 1.7, 13-Apr-05