查询BFR92供应商
Silicon NPN Planar RF Transistor
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
BFR92/BFR92R
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
1
94 9280
23
BFR92 Marking: P1
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
BFR92R Marking: P4
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
9510527
23
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
13 581
20 V
15 V
2 V
30 mA
200 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85032
Rev. 3, 20-Jan-99
3
R
thJA
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450 K/W
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BFR92/BFR92R
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 2 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
DC forward current transfer ratio VCE = 10 V, IC = 14 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 10 V, IC = 2 mA, ZS = 50 W,
f = 500 MHz
Power gain VCE = 10 V, IC = 14 mA, ZL = Z
f = 500 MHz
VCE = 10 V, IC = 14 mA, ZL = Z
f = 800 MHz
Linear output voltage – two
tone intermodulation test
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
W
Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz IP
Lopt
Lopt
,
,
G
G
V1 = V
CES
CBO
EBO
(BR)CEO
FE
T
cb
ce
eb
15 V
25 50 150
0.4 pF
0.15 pF
1.3 pF
100mA
100 nA
10
5 GHz
F 2.2 dB
pe
pe
2
3
19.5 dB
14 dB
110 mV
23.5 dBm
m
A
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Document Number 85032
Rev. 3, 20-Jan-99
Common Emitter S–Parameters
BFR92/BFR92R
Vishay Telefunken
Z0 = 50 W,T
VCE/V IC/mA f/MHz
5 5 1000 0.268 –179.7 2.66 73.6 0.117 63.1 0.500 –22.4
= 25_C, unless otherwise specified
amb
S11 S21 S12 S22
LIN
MAG
100 0.874 –27.5 6.36 158.2 0.032 74.7 0.959 –9.9
300 0.668 –74.2 4.86 125.0 0.073 54.4 0.793 –21.4
500 0.501 –107.9 3.59 104.4 0.089 47.0 0.677 –24.1
800 0.385 –143.1 2.48 86.2 0.103 47.5 0.612 –24.5
2 1000 0.361 –160.4 2.08 77.5 0.113 50.4 0.602 –25.9
1200 0.351 –175.7 1.81 69.4 0.124 53.6 0.596 –28.7
1500 0.371 164.7 1.52 59.0 0.145 58.1 0.581 –33.8
1800 0.386 146.8 1.32 50.2 0.170 61.6 0.569 –38.6
2000 0.407 136.8 1.23 45.1 0.192 62.9 0.564 –42.1
100 0.727 –41.3 12.49 147.4 0.028 69.6 0.891 –16.3
300 0.457 –97.0 7.47 111.5 0.056 56.7 0.632 –25.5
500 0.338 –131.5 4.94 95.1 0.073 57.6 0.532 –23.8
800 0.276 –164.9 3.24 80.7 0.099 61.4 0.498 –21.3
1200 0.272 168.1 2.29 67.0 0.137 63.9 0.499 –25.2
1500 0.299 153.6 1.90 57.8 0.167 64.0 0.486 –30.3
1800 0.324 138.7 1.64 50.0 0.199 63.5 0.476 –34.7
2000 0.345 130.8 1.52 45.1 0.221 62.6 0.473 –38.1
100 0.566 –56.6 18.29 136.5 0.024 67.9 0.796 –21.6
300 0.325 –116.5 8.85 103.0 0.048 63.4 0.526 –25.2
500 0.263 –149.8 5.61 89.8 0.069 66.1 0.455 –21.2
800 0.233 179.9 3.61 77.7 0.101 68.2 0.441 –17.7
10 1000 0.229 167.5 2.95 71.4 0.123 68.1 0.449 –19.1
1200 0.236 158.6 2.53 65.4 0.146 67.5 0.453 –22.4
1500 0.271 147.4 2.08 57.0 0.179 65.9 0.440 –27.7
1800 0.294 133.6 1.80 49.6 0.213 64.0 0.430 –32.0
2000 0.318 126.8 1.66 44.7 0.235 62.3 0.427 –35.5
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85032
Rev. 3, 20-Jan-99
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BFR92/BFR92R
5
10
Vishay Telefunken
VCE/V IC/mA f/MHz
100 0.487 –65.1 20.67 131.1 0.022 67.4 0.745 –23.5
300 0.286 –125.4 9.25 100.0 0.046 66.3 0.491 –24.2
500 0.243 –156.9 5.79 87.9 0.068 69.3 0.433 –19.6
800 0.223 174.5 3.71 76.6 0.102 70.2 0.427 –16.2
14 1000 0.223 163.2 3.02 70.5 0.125 69.6 0.436 –17.7
1200 0.230 155.2 2.59 64.7 0.148 68.4 0.440 –21.2
1500 0.262 145.1 2.13 56.6 0.182 66.5 0.427 –26.6
1800 0.290 132.4 1.83 49.1 0.216 64.1 0.417 –30.9
2000 0.313 124.8 1.69 44.6 0.239 62.3 0.413 –34.5
100 0.409 –74.8 22.66 125.6 0.020 67.2 0.690 –24.7
300 0.257 –135.4 9.45 97.1 0.044 69.7 0.463 –22.2
500 0.232 –165.7 5.87 86.2 0.068 72.0 0.417 –17.4
800 0.224 169.2 3.74 75.4 0.103 71.7 0.418 –14.6
20 1000 0.223 159.7 3.05 69.5 0.127 70.8 0.430 –16.4
1200 0.233 153.2 2.61 63.9 0.150 69.1 0.433 –20.1
1500 0.265 143.6 2.15 55.9 0.184 66.9 0.421 –25.7
1800 0.292 131.8 1.84 48.7 0.217 64.3 0.411 –29.9
2000 0.315 124.3 1.70 44.0 0.241 62.3 0.407 –33.6
100 0.886 –25.81 6.37 159.2 0.026 75.9 0.967 –8.2
300 0.683 –69.8 4.96 127.0 0.061 56.4 0.827 –17.8
500 0.502 –102.2 3.70 106.5 0.076 49.6 0.726 –20.1
800 0.372 –137.0 2.57 88.2 0.088 50.2 0.671 –20.9
2 1000 0.339 –155.2 2.15 79.6 0.097 53.7 0.662 –22.2
1200 0.329 –171.2 1.87 71.8 0.107 56.9 0.660 –24.6
1500 0.343 167.4 1.57 61.3 0.126 62.0 0.648 –29.1
1800 0.359 148.5 1.35 52.7 0.149 65.9 0.639 –33.2
2000 0.372 137.6 1.25 47.5 0.168 67.7 0.638 –36.3
100 0.761 –37.4 12.28 149.3 0.024 71.1 0.914 –13.0
300 0.476 –89.1 7.63 113.9 0.048 58.3 0.693 –20.8
500 0.331 –122.2 5.11 96.9 0.063 58.9 0.606 –19.7
800 0.250 –156.3 3.35 82.5 0.086 62.8 0.576 –18.0
5 1000 0.237 –173.2 2.75 75.4 0.102 64.9 0.579 –19.2
1200 0.239 173.8 2.36 68.9 0.119 66.1 0.580 –21.8
1500 0.262 156.6 1.96 60.0 0.145 66.9 0.569 –26.1
1800 0.285 139.9 1.69 51.9 0.173 67.1 0.563 –30.2
2000 0.305 130.4 1.56 47.1 0.193 66.7 0.562 –33.3
S1 1 S21 S12 S22
LIN
MAG
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
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Document Number 85032
Rev. 3, 20-Jan-99
BFR92/BFR92R
Vishay Telefunken
S1 1 S21 S12 S22
VCE/V IC/mA f/MHz
100 0.619 –50.2 18.10 138.8 0.021 68.8 0.837 –17.2
300 0.335 –105.0 9.10 105.0 0.042 64.0 0.603 –20.1
500 0.242 –138.1 5.80 91.4 0.060 66.7 0.541 –17.1
800 0.195 –172.5 3.73 79.1 0.088 69.0 0.529 –15.3
10 1000 0.191 173.8 3.04 73.0 0.107 69.5 0.538 –16.7
1200 0.196 163.2 2.60 67.2 0.127 69.3 0.543 –19.7
1500 0.226 150.4 2.15 58.8 0.155 68.5 0.533 –24.3
1800 0.255 134.3 1.85 51.4 0.184 67.3 0.526 –28.1
2000 0.273 126.4 1.70 46.7 0.205 66.2 0.526 –31.2
100 0.548 –56.8 20.43 133.7 0.020 67.8 0.796 –18.5
300 0.289 –111.7 9.46 101.7 0.040 66.5 0.576 –19.0
500 0.215 –145.8 5.95 89.3 0.059 69.3 0.524 –15.8
800 0.179 –178.4 3.81 77.8 0.089 71.1 0.519 –14.1
10 14 1000 0.180 168.9 3.10 72.0 0.108 70.8 0.530 –15.6
1200 0.188 159.2 2.65 66.2 0.128 70.2 0.534 –18.7
1500 0.223 148.0 2.19 58.2 0.158 68.9 0.526 –23.5
1800 0.247 132.8 1.88 50.9 0.187 67.4 0.519 –27.4
2000 0.268 125.7 1.73 46.4 0.208 66.1 0.518 –30.5
100 0.482 –64.4 22.24 128.1 0.018 67.5 0.754 –19.0
300 0.253 –119.6 9.56 98.8 0.038 69.0 0.557 –17.0
500 0.202 –153.7 5.96 87.3 0.059 71.7 0.519 –14.0
800 0.180 176.6 3.79 76.5 0.089 72.5 0.521 –12.9
20 1000 0.179 163.4 3.08 70.7 0.109 71.8 0.532 –14.9
1200 0.188 156.0 2.63 65.3 0.129 70.9 0.536 –18.0
1500 0.220 146.1 2.17 57.5 0.159 69.5 0.527 –22.8
1800 0.250 131.5 1.86 50.2 0.187 67.8 0.520 –26.9
2000 0.276 124.2 1.71 45.7 0.208 66.3 0.520 –30.1
LIN
MAG
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85032
Rev. 3, 20-Jan-99
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BFR92/BFR92R
Vishay Telefunken
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
6000
5000
4000
3000
2000
1000
T
f – Transition Frequency ( MHz )
0
0 5 10 15 20 25 30
IC – Collector Current ( mA )13583
VCE=10V
f=500MHz
= 25_C unless otherwise specified)
amb
1.0
0.8
0.6
0.4
0.2
cb
C – Collector Base Capacitance ( pF )
0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )12887
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.5
3.0
2.5
2.0
1.5
1.0
F – Noise Figure ( dB )
0.5
0
0 4 8 12 16 20
IC – Collector Current ( mA )13584
f=1MHz
VCE=10V
f=500MHz
Z
=50
W
S
Figure 2. Transition Frequency vs. Collector Current
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Figure 4. Noise Figure vs. Collector Current
Document Number 85032
Rev. 3, 20-Jan-99
BFR92/BFR92R
Vishay Telefunken
VCE = 10 V, IC = 14 mA , Z0 = 50
S
11
j
S
21
j0.5
j0.2
2.0 GHz
0
–j0.2
13 522
0.2
–j0.5
1.0
1
0.3
–j
Figure 5. Input reflection coefficient
0.1
j2
2
5
–j5
–j2
W
S
12
90°
0.1
–90°
0.5
2.0 GHz
1.5
1.0
60°
0.08 0.16
30°
0°
–30°
120°
150°
j5
1
180°
–150°
–120° –60°
13 523
Figure 7. Reverse transmission coefficient
S
22
90°
120°
0.1
150°
180°
–150°
–120° –60°
13 524
0.3
0.5
2.0 GHz
–90°
8 16
Figure 6. Forward transmission coefficient
60°
30°
–30°
j
j0.5
j0.2
0°
0
–j0.2
13 525
–j0.5
0.2
0.5
1
2.0 GHz
–j
j2
j5
2
5
0.5
–j2
1
0.1
–j5
Figure 8. Output reflection coefficient
Document Number 85032
Rev. 3, 20-Jan-99
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BFR92/BFR92R
Vishay Telefunken
Dimensions of BFR92 in mm
95 11346
Dimensions of BFR92R in mm
95 11347
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Document Number 85032
Rev. 3, 20-Jan-99
BFR92/BFR92R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85032
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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