VISHAY BF996S Technical data

查询BF996SA供应商

N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode

Electrostatic sensitive device.
Observe precautions for handling.

Applications

Input- and mixer stages in UHF tuners.

Features

D

Integrated gate protection diodes

D

Low noise figure

D

Low feedback capacitance

D

High cross modulation performance

D

Low input capacitance

D

High AGC-range

BF996S

Vishay Telefunken

21

94 9279

13 579

G

2

G

1

43

BF996S Marking: MH
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1

12623

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V
Drain current I
Gate 1/Gate 2 - source peak current ±I
Total power dissipation T
Channel temperature T
Storage temperature range T

≤ 60 °C P

amb

DS

D

G1/G2SM

tot
Ch
stg

D

20 V
30 mA

10 mA
200 mW
150

–65 to +150

S

°

C

°

C

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit

Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35mm Cu

Document Number 85010
Rev. 3, 20-Jan-99

3

R

thChA

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450 K/W

1 (8)

BF996S

DS G1S G2S

g

g

Vishay Telefunken

Electrical DC Characteristics

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Drain - source
breakdown voltage

Gate 1 - source
breakdown voltage

Gate 2 - source
breakdown voltage

Gate 1 - source
leakage current

Gate 2 - source
leakage current

Drain current VDS = 15 V, V

Gate 1 - source
cut-off voltage

Gate 2 - source
cut-off voltage

ID = 10 mA, –V

±I

= 10 mA, V

G1S

±I

= 10 mA, V

G2S

±V

= 5 V, V

G1S

±V

= 5 V, V

G2S

VDS = 15 V, V

VDS = 15 V, V

= –V

G1S

G2S

G1S

= VDS = 0 ±I

G2S

= VDS = 0 ±I

G1S

= 0, V

G1S

= 4 V V

G2S

= VDS = 0 ±V

= VDS = 0 ±V

= 4 V BF996S I

G2S

BF996SA I
BF996SB I

= 4 V, ID = 20 mA –V

G2S

= 0, ID = 20 mA –V

G1S

(BR)DS

(BR)G1SS

(BR)G2SS

G1SS

G2SS

DSS
DSS
DSS

G1S(OFF)

G2S(OFF)

20 V

8 14 V

8 14 V

4 18 mA
4 10.5 mA

9.5 18 mA

50 nA

50 nA

2.5 V

2.0 V

Electrical AC Characteristics

VDS = 15 V, ID = 10 mA, V

Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance y
Gate 1 input capacitance C
Gate 2 input capacitance V
Feedback capacitance C
Output capacitance C
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G

AGC range V
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.0 dB

= 4 V, f = 1 MHz , T

G2S

G1S

= 0, V

= 4 V C

G2S

GS = 3.3 mS, GL = 1 mS, f = 800 MHz G

= 4 to –2 V, f = 800 MHz

G2S

= 25_C, unless otherwise specified

amb

 15 18.5 mS

21s
issg1
issg2

rss

oss

ps
ps

D

G

ps

2.2 2.6 pF

1.1 pF
25 35 fF

10.8 1.2 pF
25 dB
18 dB

40 dB

GS = 3.3 mS, GL = 1 mS, f = 800 MHz F 1.8 dB

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Document Number 85010

Rev. 3, 20-Jan-99

Common Source S–Parameters

BF996S

Vishay Telefunken

VDS , = 15 V , V

ID/mA f/MHz

5 700 –1.62 –52.3 0.43 85.0 –47.02 58.9 –0.91 –19.7

10 700 –1.75 –55.1 2.39 88.7 –46.53 56.7 –0.96 –20.0

15 700 –1.86 –57.2 3.22 89.6 –46.13 54.9 –1.02 –20.4

= 4 V , Z0 = 50 W,T

G2S

S11 S21 S12 S22

LOG

MAG

dB deg dB deg dB deg dB deg
100 –0.05 –8.5 3.24 164.9 –56.84 82.2 –0.08 –3.4
200 –0.15 –17.7 3.63 150.9 –50.57 75.6 –0.18 –7.1
300 –0.43 –24.6 2.51 134.7 –48.51 67.7 –0.29 –9.7
400 –0.70 –32.1 2.01 121.3 –46.98 62.8 –0.44 –12.3
500 –1.03 –39.2 1.45 108.4 –46.40 57.8 –0.59 –15.1
600 –1.33 –45.8 0.94 96.5 –46.40 57.3 –0.76 –17.4

800 –1.92 –58.7 –0.10 74.1 –47.53 63.3 –1.08 –22.0
900 –2.21 –64.7 –0.59 63.6 –47.81 73.1 –1.26 –24.3

1000 –2.49 –70.7 –1.12 53.1 –48.52 83.5 –1.45 –26.2
1100 –2.80 –76.6 –1.52 43.7 –48.53 102.1 –1.57 –28.4
1200 –3.07 –82.5 –1.93 33.6 –46.95 120.4 –1.75 –30.5
1300 –3.31 –88.6 –2.35 24.1 –44.44 131.7 –1.92 –32.7

100 –0.05 –9.0 5.19 165.3 –56.24 81.9 –0.11 –3.5
200 –0.16 –18.7 5.58 151.8 –49.97 75.0 –0.21 –7.2
300 –0.48 –26.0 4.45 136.3 –47.91 67.2 –0.33 –9.8
400 –0.76 –33.7 3.95 123.3 –46.48 61.8 –0.47 –12.6
500 –1.11 –41.2 3.40 110.9 –45.91 56.3 –0.65 –15.3
600 –1.43 –48.3 2.88 99.5 –45.91 55.8 –0.81 –17.8

800 –2.07 –61.6 1.88 78.1 –47.13 60.7 –1.12 –22.4
900 –2.40 –67.9 1.39 67.9 –47.41 69.9 –1.32 –24.6

1000 –2.70 –74.2 0.90 57.9 –48.21 80.0 –1.49 –26.6
1100 –3.03 –80.2 0.50 48.7 –48.43 98.9 –1.61 –28.8
1200 –3.32 –86.4 0.13 38.9 –47.04 118.2 –1.79 –31.0
1300 –3.59 –92.3 –0.28 29.6 –44.54 130.5 –1.96 –33.3

100 –0.05 –9.4 6.07 165.4 –55.74 81.4 –0.15 –3.6
200 –0.17 –19.4 6.44 152.0 –49.47 74.6 –0.24 –7.3
300 –0.50 –27.1 5.31 136.7 –47.41 66.4 –0.36 –10.0
400 –0.81 –35.0 4.80 123.8 –45.98 60.8 –0.52 –12.9
500 –1.18 –42.9 4.23 111.5 –45.41 55.1 –0.68 –15.7
600 –1.52 –50.3 3.72 100.3 –45.41 54.4 –0.84 –18.0

800 –2.20 –63.9 2.72 79.4 –46.63 58.5 –1.16 –22.7
900 –2.53 –70.4 2.24 69.2 –47.00 67.3 –1.35 –25.0

1000 –2.86 –76.8 1.74 59.4 –47.91 76.7 –1.53 –27.1
1100 –3.21 –82.9 1.34 50.2 –48.33 95.2 –1.66 –29.4
1200 –3.50 –89.0 0.95 40.8 –47.04 115.3 –1.84 –31.6
1300 –3.80 –95.1 0.56 31.5 –44.53 128.7 –2.00 –33.9

= 25_C, unless otherwise specified

amb

ANG

LOG

MAG

ANG

LOG
MAG

ANG

LOG

MAG

ANG

Document Number 85010
Rev. 3, 20-Jan-99

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BF996S

Vishay Telefunken

Typical Characteristics (T

300

250

200

150

100

50

tot

P – Total Power Dissipation ( mW )

0

0 20 40 60 80 100 120 140 160

T

– Ambient Temperature ( °C )96 12159

amb

Figure 1. Total Power Dissipation vs.

Ambient Temperature

32

V

=4V

G2S

28

P

=200mW

tot

24
20
16
12

2V

1.5V
1V

0.5V

= 25_C unless otherwise specified)

amb

22
20

VDS=15V

18
16
14
12
10

8
6

D

I – Drain Current ( mA )

4
2
0

–1 –0.5 0.0 0.5 1.0 1.5

V

– Gate 2 Source Voltage ( V )12852

G2S

Figure 4. Drain Current vs. Gate 2 Source Voltage

4.0
VDS=15V

3.5
V

=4V

G2S

3.0

2.5

0

2.0

1.5

f=1MHz

5V

4V
3V

2V

1V

0

V

=–1V

G1S

8

D

I – Drain Current ( mA )

4
0

0246810121416

VDS – Drain Source Voltage ( V )12849

–0.5V

V

=–1V

G1S

Figure 2. Drain Current vs. Drain Source Voltage

22
20

VDS=15V

18
16
14
12
10

8
6

D

I – Drain Current ( mA )

4
2
0

–1 –0.5 0.0 0.5 1.0 1.5

V

– Gate 1 Source Voltage ( V )12851

G1S

6V

5V 4V

3V

2V

1V

0.5V

0

V

=–1V

G2S

Figure 3. Drain Current vs. Gate 1 Source Voltage

1.0

0.5

issg1

C – Gate 1 Input Capacitance ( pF )

0

–1 –0.5 0.0 0.5 1.0 1.5

ID – Drain Current ( mA )12853

Figure 5. Gate 1 Input Capacitance vs. Drain Current

3.0

2.5

2.0

1.5

1.0

0.5

issg2

C – Gate 2 Input Capacitance ( pF )

0

–2–1012345

V

– Gate 2 Source Voltage ( V )12854

G2S

VDS=15V

=0

V

G1S

f=1MHz

Figure 6. Gate 2 Input Capacitance vs.

Gate 2 Source Voltage

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Document Number 85010

Rev. 3, 20-Jan-99

BF996S

Vishay Telefunken

2.0

1.8

1.6

V

=4V

G2S

f=1MHz

1.4

1.2

1.0

0.8

0.6

0.4

oss

C – Output Capacitance ( pF )

0.2
0

0 2 4 6 8 101214161820

VDS – Drain Source Voltage ( V )12856

Figure 7. Output Capacitance vs. Drain Source Voltage

10

f=200MHz

0

–10

–20

–30

–40

2

21

–50

S – Transducer Gain ( dB )

–60

–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0

V

– Gate 1 Source Voltage ( V )12855

G1S

4V

3V
2V

1V

0

–0.2V
–0.4V
–0.6V

–0.8V

V

=–1V

G2S

Figure 8. Transducer Gain vs. Gate 1 Source Voltage

20

700MHz

500MHz

f=1300MHz

900MHz

f=100...1300MHz

1100MHz

VDS=15V
V

=4V

G2S

I

=10mA

D

18
16
14
12
10

11

8
6

Im ( y ) ( mS )

4
2

100MHz

300MHz

0

012345678910

Re (y11) ( mS )12857

Figure 10. Short Circuit Input Admittance

0

–5

f=100...1300MHz

–10

–15

ID=5mA

21

Im ( y ) ( mS )

–20

–25

VDS=15V
V

G2S

10mA
15mA

=4V

1300MHz

f=100MHz

300MHz

500MHz

700MHz

900MHz

1100MHz

–15 –10 –5 0 5 10 15 20

Re (y21) ( mS )12858

Figure 11. Short Circuit Forward Transfer Admittance

20
18
16

VDS=15V

f=1MHz

4V

3V
2V

14
12

1V

10

8
6
4
2

21s

y – Forward Transadmittance ( mS )

V

G2S

=0

0.5V

0

024681012141618

ID – Drain Current ( mA )12850

Figure 9. Forward Transadmittance vs. Drain Current

Document Number 85010
Rev. 3, 20-Jan-99

7

6

VDS=15V

V
I

5

f=100...1300MHz

4

G2S

=10mA

D

=4V

f=1300MHz

1100MHz

900MHz

700MHz

3

22

Im ( y ) ( mS )

2

1

100MHz

500MHz

300MHz

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0
Re (y22) ( mS )12859

Figure 12. Short Circuit Output Admittance

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BF996S

Vishay Telefunken

VDS = 15 V, ID = 10 mA, V

S

11

j

j0.5

j0.2

S

0

–j0.2

21

0.2

0.5

12 968

1

1300MHz

–j0.5

–j

2

Figure 13. Input reflection coefficient

90°

120°

= 4 V , Z0 = 50

G2S

j2

j5

5

–j2

60°

1

100

–j5

W

S

12

90°

120°

150°

180°

–150°

12 969

Figure 15. Reverse transmission coefficient

S

22

1300MHz

100

–120° –60°

–90°

j

j0.5

60°

0.08 0.16

j2

30°

0°

–30°

150°

100

180°

–150°

–120° –60°

12 970

300

500

700

1300MHz
1 2

–90°

Figure 14. Forward transmission coefficient

30°

–30°

j0.2

0°

0

–j0.2

12 971

–j0.5

0.2

0.5

1

–j

2

1300MHz

–j2

j5

100

1

–j5

5

Figure 16. Output reflection coefficient

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Document Number 85010

Rev. 3, 20-Jan-99

Dimensions in mm

BF996S

Vishay Telefunken

96 12240

Document Number 85010
Rev. 3, 20-Jan-99

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BF996S

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 85010

Rev. 3, 20-Jan-99