VISHAY BF994S Technical data

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N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Applications
Input- and mixer stages especially VHF TV-tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
BF994S
Vishay Telefunken
21
94 9279
13 579
G
2
G
1
43
BF994 Marking: MG Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
12623
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Type Symbol Value Unit Drain - source voltage V Drain current I Gate 1/Gate 2 - source peak current ±I Total power dissipation T Channel temperature T Storage temperature range T
60 °C P
amb
DS
D
G1/G2SM
tot Ch stg
D
20 V 30 mA
10 mA 200 mW 150
–55 to +150
S
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85008 Rev. 3, 20-Jan-99
3
R
thChA
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450 K/W
1 (7)
BF994S
DS G1S G2S
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Drain - source breakdown voltage
Gate 1 - source breakdown voltage
Gate 2 - source breakdown voltage
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain current VDS = 15 V, V
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
ID = 10 mA, –V
±I
= 10 mA, V
G1S
±I
= 10 mA, V
G2S
±V
= 5 V, V
G1S
±V
= 5 V, V
G2S
VDS = 15 V, V
VDS = 15 V, V
= –V
G1S
G2S
G1S
= VDS = 0 ±I
G2S
= VDS = 0 ±I
G1S
= 0, V
G1S
= 4 V V
G2S
= VDS = 0 ±V
= VDS = 0 ±V
= 4 V BF994S I
G2S
BF994SA I BF994SB I
= 4 V, ID = 20 mA –V
G2S
= 0, ID = 20 mA –V
G1S
(BR)DS
(BR)G1SS
(BR)G2SS
G1SS
G2SS
DSS DSS DSS
G1S(OFF)
G2S(OFF)
20 V
6 20 V
4 18 mA 4 10.5 mA
9.5 18 mA
20 V
50 nA
50 nA
2.5 V
2.0 V
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, V
Parameter Test Conditions Symbol Min Typ Max Unit Forward transadmittance y Gate 1 input capacitance C Gate 2 input capacitance V Feedback capacitance C Output capacitance C Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz G AGC range V Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.0 dB
= 4 V, f = 1 MHz , T
G2S
= 0, V
G1S
G2S
G2S
= 4 to –2 V, f = 200 MHz
= 25_C, unless otherwise specified
amb
= 4 V C
15 18.5 mS
21s
2.5 3.0 pF
1.2 pF 25 35 fF
1.0 1.3 pF 25 dB 50 dB
D
issg1 issg2
rss
oss
ps
G
ps
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Document Number 85008
Rev. 3, 20-Jan-99
BF994S
Vishay Telefunken
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
32
V
=4V
28 24 20 16 12
G2S
P
tot
=200mW
2V
1.5V 1V
0.5V
= 25_C unless otherwise specified)
amb
22 20
VDS=15V
18 16 14 12 10
8 6
D
I – Drain Current ( mA )
4 2 0
–1 –0.5 0.0 0.5 1.0 1.5
V
– Gate 2 Source Voltage ( V )12852
G2S
Figure 4. Drain Current vs. Gate 2 Source Voltage
4.0 VDS=15V
3.5
V
=4V
G2S
3.0
2.5
0
2.0
1.5
f=1MHz
5V
4V
3V 2V
1V
0
V
=–1V
G1S
8
D
I – Drain Current ( mA )
4 0
0246810121416
VDS – Drain Source Voltage ( V )12849
–0.5V
V
=–1V
G1S
Figure 2. Drain Current vs. Drain Source Voltage
22 20
VDS=15V
18 16 14 12 10
8 6
D
I – Drain Current ( mA )
4 2 0
–1 –0.5 0.0 0.5 1.0 1.5
V
– Gate 1 Source Voltage ( V )12851
G1S
6V
5V 4V
3V
2V
1V
0.5V
0
V
=–1V
G2S
Figure 3. Drain Current vs. Gate 1 Source Voltage
1.0
0.5
issg1
C – Gate 1 Input Capacitance ( pF )
0
–1 –0.5 0.0 0.5 1.0 1.5
ID – Drain Current ( mA )12853
Figure 5. Gate 1 Input Capacitance vs. Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
issg2
C – Gate 2 Input Capacitance ( pF )
0
2–1012345
V
– Gate 2 Source Voltage ( V )12854
G2S
VDS=15V
=0
V
G1S
f=1MHz
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
Document Number 85008 Rev. 3, 20-Jan-99
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BF994S
Vishay Telefunken
2.0
1.8
1.6
V
=4V
G2S
f=1MHz
1.4
1.2
1.0
0.8
0.6
0.4
oss
C – Output Capacitance ( pF )
0.2 0
0 2 4 6 8 101214161820
VDS – Drain Source Voltage ( V )12856
Figure 7. Output Capacitance vs. Drain Source Voltage
10
f=200MHz
0
–10
–20
–30
–40
2
21
–50
S – Transducer Gain ( dB )
–60
–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0
V
– Gate 1 Source Voltage ( V )12855
G1S
4V 3V
2V 1V
0
–0.2V –0.4V –0.6V
–0.8V
V
=–1V
G2S
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
12
f=700MHz
10
8
600MHz
500MHz
6
11
4
Im ( y ) ( mS )
2
50MHz
200MHz
400MHz
300MHz
VDS=15V V
=4V
G2S
I
=10mA
D
f=50...700MHz
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Re (y11) ( mS )12860
Figure 10. Short Circuit Input Admittance
0
–4
–8
700MHz
21
–12
Im ( y ) ( mS )
ID=5mA
–16
–20
0 2 4 6 8 10121416182022
300MHz
500MHz
10mA
20mA
f=50MHz
150MHz
Re (y21) ( mS )12861
VDS=15V V
=4V
G2S
f=50...700MHz
Figure 11. Short Circuit Forward Transfer Admittance
20
VDS=15V
18
f=1MHz
16
4V 3V
2V
14 12
1V
10
8 6 4 2
21s
y – Forward Transadmittance ( mS )
V
G2S
=0
0.5V
0
024681012141618
ID – Drain Current ( mA )12850
Figure 9. Forward Transadmittance vs. Drain Current
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4.0
600MHz
500MHz
f=700MHz
VDS=15V V
=4V
G2S
=10mA
I
D
f=50...700MHz
3.5
3.0
2.5
2.0
22
1.5
Im ( y ) ( mS )
1.0
0.5
400MHz
300MHz
200MHz
50MHz
0
0 0.4 0.8 1.2 1.6 2.0
Re (y22) ( mS )12862
Figure 12. Short Circuit Output Admittance
Document Number 85008
Rev. 3, 20-Jan-99
BF994S
Vishay Telefunken
VDS = 15 V, ID = 10 mA, V
S
11
j
j0.5
j0.2
S
0
–j0.2
21
0.2
0.5
–j0.5
12 964
1
–j
2
700MHz
Figure 13. Input reflection coefficient
90°
120°
= 4 V , Z0 = 50
G2S
j2
j5
200
50
1
–j5
5
450
–j2
60°
W
S
12
90°
120°
150°
200
700MHz
180°
–150°
–120° –60°
12 965
Figure 15. Reverse transmission coefficient
S
22
j0.5
50
–90°
j
60°
0.08 0.16
j2
30°
0°
–30°
150°
200
50
180°
–150°
12 966
450
700MHz
1 2
–120° –60°
–90°
Figure 14. Forward transmission coefficient
30°
–30°
j0.2
0°
0
–j0.2
12 967
–j0.5
0.2
0.5
1
–j
2
700MHz
–j2
j5
5
1
50
–j5
Figure 16. Output reflection coefficient
Document Number 85008 Rev. 3, 20-Jan-99
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BF994S
Vishay Telefunken
Dimensions in mm
96 12240
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Document Number 85008
Rev. 3, 20-Jan-99
BF994S
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85008 Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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