查询BF970供应商
Silicon PNP Planar RF Transistor
Applications
UHF oscillator and mixer stages.
Features
D
High gain
D
Low noise
3
2
BF970
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
94 9308
1
13623
BF970 Marking: BF970
Plastic case (TO 50)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage –V
Collector-emitter voltage –V
Emitter-base voltage –V
Collector current –I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
40 V
35 V
3 V
30 mA
300 mW
150
–55 to +150
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35mm Cu
3
R
thJA
300 K/W
°
C
°
C
Document Number 85005
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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BF970
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current –VCE = 40 V, VBE = 0 –I
Collector-base cut-off current –VCB = 20 V, IE = 0 –I
Emitter-base cut-off current –VEB = 2 V, IC = 0 –I
Collector-emitter breakdown voltage –IC = 1 mA, IB = 0 –V
DC forward current transfer ratio –VCE = 10 V, –IC = 3 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
CES
CBO
EBO
(BR)CEO
FE
100mA
100 nA
10
m
35 V
25 50 90
A
Parameter Test Conditions Sym-
Transition frequency –VCE = 10 V, –IC = 3 mA, f = 300 MHz f
Collector-base capacitance –VCB = 10 V, f = 1 MHz C
Noise figure –VCE = 10 V, –IC = 3 mA, ZS = 50 W,
f = 800 MHz
Power gain –VCE = 10 V, –IC = 3 mA, ZL = 500 W,
f = 800 MHz
Collector current for G
pbmax
–VCE = 10 V, ZL = 500 W, f = 800 MHz –I
Min Typ Max Unit
bol
T
cb
1000 MHz
0.4 pF
F 4.2 5.0 dB
G
13 14.5 dB
pb
C
5 mA
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Document Number 85005
Rev. 3, 20-Jan-99
BF970
Vishay Telefunken
Typical Characteristics (T
400
350
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )12845
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1200
1000
800
= 25_C unless otherwise specified)
amb
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
CB
C – Collector Base Capacitance ( pF )
0
0 2 4 6 8 101214161820
VCB – Collector Base Voltage ( V )12846
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
600
400
200
T
f – Transition Frequency ( MHz )
–VCB=10V
f=300MHz
0
03691215
–I
– Collector Current ( mA )12847
C
Figure 2. Transition Frequency vs. Collector Current
Document Number 85005
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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BF970
Vishay Telefunken
Dimensions of BF970 in mm
96 12243
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Document Number 85005
Rev. 3, 20-Jan-99
BF970
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 85005
Rev. 3, 20-Jan-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
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