Vishay BF569, BF569R Schematic [ru]
Silicon PNP Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For selfoscillating RF mixer stages.
Features
D
High gain
D
Low noise
BF569/BF569R
Vishay Semiconductors
1
94 9280
23
BF569 Marking: LH
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
BF569R Marking: LM
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
9510527
23
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage –V
Collector-emitter voltage –V
Emitter-base voltage –V
Collector current –I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
13 581
40 V
35 V
3 V
30 mA
200 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85000
Rev. 3, 20-Jan-99
3
R
thJA
450 K/W
www.vishay.com
1 (5)
BF569/BF569R
Vishay Semiconductors
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current –VCE = 40 V, VBE = 0 –I
Collector-base cut-off current –VCB = 20 V, IE = 0 –I
Emitter-base cut-off current –VEB = 2 V, IC = 0 –I
Collector-emitter breakdown voltage –IC = 1 mA, IB = 0 –V
DC forward current transfer ratio –VCE = 10 V, –IC = 3 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
CES
CBO
EBO
(BR)CEO
FE
100mA
100 nA
10
m
35 V
25 50 90
A
Parameter Test Conditions Sym-
Transition frequency –VCE = 10 V, –IC = 3 mA, f = 300 MHz f
Collector-base capacitance –VCB = 10 V, f = 1 MHz C
Noise figure –VCE = 10 V, –IC = 3 mA, ZS = 50 W,
ZL = 500 W, f = 800 MHz
Power gain –VCE = 10 V, –IC = 3 mA, ZS = 50 W,
Z
= 500 W, f = 800 MHz
L
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
= 25_C unless otherwise specified)
amb
1200
1000
800
600
400
200
T
f – Transition Frequency ( MHz )
Figure 2. Transition Frequency vs. Collector Current
–VCB=10V
f=300MHz
0
03691215
–I
Min Typ Max Unit
bol
T
cb
1000 MHz
0.35 pF
F 4.2 5.0 dB
G
– Collector Current ( mA )12847
C
13 14.5 dB
pb
www.vishay.com
2 (5)
Document Number 85000
Rev. 3, 20-Jan-99
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