Vishay BAV70 Schematic [ru]
www.vishay.com
18108
12
3
Small Signal Switching Diode, Dual
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
BAV70
Vishay Semiconductors
FEATURES
• Silicon Epitaxial Planar Diode
• Fast switching dual diode with common cathode
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAV70
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Peak reverse voltage V
Reverse voltage V
Forward current (continuous) I
Non repetitive peak forward current
Power dissipation
Note
(1)
Device on fiberglass substrate
(1)
THERMAL CHARACTERISTICS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Junction temperature T
Storage temperature range T
Operating temperature range T
Note
(1)
Device on fiberglass substrate
BAV70-E3-08 or BAV70-E3-18
BAV70-HE3-08 or BAV70-HE3-18
= 25 °C, unless otherwise specified)
amb
t
= 1 μs I
p
t
= 1 ms I
p
t
= 1 s I
p
= 25 °C, unless otherwise specified)
amb
(1)
Dual diodes common cathode JJ Tape and reel
70 V
70 V
250 mA
2A
1A
0.5 A
350 mW
430 K/W
150 °C
- 65 to + 150 °C
- 55 to + 150 °C
R
RRM
FSM
FSM
FSM
P
thJA
R
F
tot
j
stg
op
Rev. 2.0, 16-May-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 85546
www.vishay.com
22290
10
2
10
1
10
-1
10
-2
10
-5
10
-6
10
-3
10
-4
10
-1
10
-2
10
-0
10
0
/
FM
t
s
D = 0.005
0.01
0.02
0.05
0.1
0.2
t
p
t
p
D =
T
T
BAV70
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I
Forward voltage
Reverse current
V
V
Diode capacitance V
I
= 10 mA to iR = 1 mA,
Reverse recovery time
F
V
TYPICAL CHARACTERISTICS (T
1000
100
Tj = 100 °C
10
1
0.1
F
I - Forward Current (mA)
25 °C
= 1 mA V
F
I
= 10 mA V
F
I
= 50 mA V
F
I
= 150 mA V
F
V
= 70 V I
R
= 70 V, Tj = 150 °C I
R
= 25 V, Tj = 150 °C I
R
= 0 V, f = 1 MHz C
R
= 6 V, RL = 100
R
= 25 °C, unless otherwise specified)
amb
F
F
F
F
R
R
R
D
t
rr
0.715 V
0.855 V
1V
1.25 V
2500 nA
50 μA
30 μA
1.5 pF
6ns
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
V
Forward Voltage (V)
-
F
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Peak forward current/
FM
= f (t
)
p
Rev. 2.0, 16-May-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 85546
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