VISHAY BAT42W-V, BAT43W-V Technical data

Small Signal Schottky Diodes

Features

• These diodes feature very low turn-on volt­age and fast switching. These devices are
protected by a PN junction guard ring
against excessive voltage, such as elec­trostatic discharges

• These diodes are also available in the DO35 case
with the type designations BAT42 to BAT43 and in
MiniMELF SOD80 case with the type designations
LL42 to LL43

• For general purpose applications

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

e3

BAT42W-V/BAT43W-V

Vishay Semiconductors

17431

Mechanical Data

Case: SOD123 Plastic case
Weight: approx. 10.3 mg
Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Par t Ordering code Type Marking Remarks

BAT42W-V BAT42W-V-GS18 or BAT42W-V-GS08 L2 Tape and Reel

BAT43W-V BAT43W-V-GS18 or BAT43W-V-GS08 L3 Tape and Reel

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Repetitive peak reverse voltage

= 25 °C I

Forward continuous current

Repetitive peak forward current

Surge forward current

Power dissipation

1)

Valid provided that electrodes are kept at ambient temperature

1)

T

amb

< 1 s, δ < 0.5, T

t

p

< 10 ms, T

t

p

T

= 65 °C P

amb

= 25 °C I

amb

= 25 °C I

amb

V

RRM

F

FRM

FSM

tot

30 V

1)

200

1)

500

1)

4

1)

200

mA

mA

A

mW

Document Number 85661

Rev. 1.5, 27-Feb-07

www.vishay.com

1

BAT42W-V/BAT43W-V

Vishay Semiconductors

Thermal Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Thermal resistance junction to ambient air

Junction temperature

Ambient operating temperature range

Storage temperature range

1)

Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Part Symbol Min Ty p. Max Unit

= 100 µA (pulsed) V

Reverse breakdown voltage

Leakage current

Forward voltage

1)

1)

Diode capacitance

Reverse recovery time I

Rectification efficieny R

1)

Pulse test tp < 300 µs, tp/T < 0.02

I

R

VR = 25 V I

= 25 V, Tj = 100 °C I

V

R

IF = 200 mA V

= 10 mA

I

F

= 50 mA

I

F

= 2 mA

I

F

= 15 mA

I

F

= 1 V, f = 1 MHz C

V

R

= 10 mA, IR = 10 mA,

F

= 1 mA, RL = 100 Ω

i

R

= 15 kΩ, CL = 300 pF,

L

f = 45 MHz, V

RF

= 2 V

R

T

T

BAT42W-V

BAT42W-V

BAT43W-V

BAT43W-V

thJA

T

amb

stg

1)

300

j

125 °C

K/W

- 55 to + 125 °C

- 55 to + 150 °C

(BR)

R

R

V

V

V

V

t

rr

η

F

F

F

F

F

D

v

30 V

0.5 µA

100 µA

1000 mV

400 mV

650 mV

260 330 mV

450 mV

7pF

5ns

80 %

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

250

200

150

100

50

tot

P - Power Dissipation (mW)

0

18442

50 100 1500

T

- Ambient Temperature (°C)

amb

Figure 1. Admissible Power Dissipation vs. Ambient Temperature

www.vishay.com

2

200

1000

100

- 40 °C

25 °C

F

I- Forward Current (mA)

18443

125 °C

10

1

0.1

0.01

- Instantaneous Forward Voltage (mV)

V

F

Figure 2. Typical Reverse Characteristics

Document Number 85661

120010008006004002000

Rev. 1.5, 27-Feb-07