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RF PIN Diode - Single in SOD-523
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
BAR63V-02V
Vishay Semiconductors
1
12
2
16863
Features
• Low forward resistance
RF-signal tuning
Mobile, wireless and TV-Applications
• Space saving SOD-523 package with
low series inductance
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
e3
Mechanical Data
Case: SOD-523 Plastic case
Weight: approx. 1.6 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
Applications
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
For frequency up to 3 GHz
Parts Table
Par t Ordering code Marking Remarks
BAR63V-02V BAR63V-02V-GS18 or BAR63V-02V-GS08 C Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T
R
F
j
stg
50 V
100 mA
150 °C
- 55 to + 150 °C
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction soldering point R
Document Number 85642
Rev. 1.5, 29-Jun-05
thJS
100 K/W
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BAR63V-02V
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parame te r Test condition Symbol Min Ty p. Max Unit
Reverse voltage I
Reverse current V
Forward voltage I
Diode capacitance f = 1 MHz, V
Forward resistance f = 100 MHz, I
Charge carrier life time I
= 10 µAV
R
= 35 V I
R
= 100 mA V
F
= 0 C
R
f = 1 MHz, V
f = 100 MHz, I
f = 100 MHz, I
= 10 mA, IR = 6 mA, iR = 3 mA t
F
= 5 V C
R
= 1 mA r
F
= 5 mA r
F
= 10 mA r
F
R
R
F
D
D
f
f
f
rr
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
50 V
0.28 pF
0.23 0.3 pF
2.0 Ω
1.1 2.0 Ω
0.9 Ω
115 ns
10 nA
1.2 V
6
5
W
4
3
2
1
f
r - Forward Resistance ( )
0
0.1 1.0 10 100
18341_1
IF- Forward Current ( mA )
f = 100 MHz
Figure 1. Forward Resistance vs. Forward Current
0.30
0.25
0.20
0.15
0.10
D
0.05
C - Diode Capacitance ( pF )
0.00
048 12 16 20 24 28
18333
f=1MHz
VR- Reverse V oltage (V)
100.00
10.00
1.00
0.10
F
I - Forward Current ( mA )
0.01
0.5 0.6 0.7 0.8 0.9 1.0
18325
VF- Forward Voltage(V)
Figure 3. Forward Current vs. Forward Voltage
120
100
80
60
40
R
20
V - Reverse V oltage(V)
0
0.01 0.1 1.0 10 100 1000
18329
IR- Reverse Current ( µA)
Figure 2. Diode Capacitance vs. Reverse Voltage
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Figure 4. Reverse Voltage vs. Reverse Current
Document Number 85642
Rev. 1.5, 29-Jun-05
12
10
8
6
4
2
0
-2
-4
F
I - Forward Current ( mA )
-6
-8
-50 0 50 100 150 200
18337
IF=10mA
I
= 6 mA
R
i
=3mA
rr
Recovery Time ( ns )
Figure 5. Typical Charge Recovery Curve
Package Dimensions in mm (Inches)
BAR63V-02V
Vishay Semiconductors
ISO Method E
0.3 (0.012)
0.22 (0.008)
0.16 (0.006)
1.6 (0.062)
1.2 (0.047)
0.15 (0.006)
0.15 A
A
0.6 (0.023)
0.8 (0.031)
Mounting Pad Layout
1.35 (0.053)
0.39 (0.015)
0.35 (0.014)
16864
Document Number 85642
Rev. 1.5, 29-Jun-05
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BAR63V-02V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
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Document Number 85642
Rev. 1.5, 29-Jun-05
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