VISHAY BAR63V-02V Technical data
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RF PIN Diode - Single in SOD-523
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-02V was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
BAR63V-02V
Vishay Semiconductors
1
12
2
16863
Features
• Low forward resistance
RF-signal tuning
Mobile, wireless and TV-Applications
• Space saving SOD-523 package with
low series inductance
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
e3
Mechanical Data
Case: SOD-523 Plastic case
Weight: approx. 1.6 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
Applications
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
For frequency up to 3 GHz
Parts Table
Par t Ordering code Marking Remarks
BAR63V-02V BAR63V-02V-GS18 or BAR63V-02V-GS08 C Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T
R
F
j
stg
50 V
100 mA
150 °C
- 55 to + 150 °C
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction soldering point R
Document Number 85642
Rev. 1.5, 29-Jun-05
thJS
100 K/W
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1
BAR63V-02V
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parame te r Test condition Symbol Min Ty p. Max Unit
Reverse voltage I
Reverse current V
Forward voltage I
Diode capacitance f = 1 MHz, V
Forward resistance f = 100 MHz, I
Charge carrier life time I
= 10 µAV
R
= 35 V I
R
= 100 mA V
F
= 0 C
R
f = 1 MHz, V
f = 100 MHz, I
f = 100 MHz, I
= 10 mA, IR = 6 mA, iR = 3 mA t
F
= 5 V C
R
= 1 mA r
F
= 5 mA r
F
= 10 mA r
F
R
R
F
D
D
f
f
f
rr
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
50 V
0.28 pF
0.23 0.3 pF
2.0 Ω
1.1 2.0 Ω
0.9 Ω
115 ns
10 nA
1.2 V
6
5
W
4
3
2
1
f
r - Forward Resistance ( )
0
0.1 1.0 10 100
18341_1
IF- Forward Current ( mA )
f = 100 MHz
Figure 1. Forward Resistance vs. Forward Current
0.30
0.25
0.20
0.15
0.10
D
0.05
C - Diode Capacitance ( pF )
0.00
048 12 16 20 24 28
18333
f=1MHz
VR- Reverse V oltage (V)
100.00
10.00
1.00
0.10
F
I - Forward Current ( mA )
0.01
0.5 0.6 0.7 0.8 0.9 1.0
18325
VF- Forward Voltage(V)
Figure 3. Forward Current vs. Forward Voltage
120
100
80
60
40
R
20
V - Reverse V oltage(V)
0
0.01 0.1 1.0 10 100 1000
18329
IR- Reverse Current ( µA)
Figure 2. Diode Capacitance vs. Reverse Voltage
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2
Figure 4. Reverse Voltage vs. Reverse Current
Document Number 85642
Rev. 1.5, 29-Jun-05
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