Vishay B2S, B4S, B6S Schematics
New Product
B2S, B4S & B6S
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
FEATURES
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• UL recognition, file number E54214
• Saves space on printed circuit boards
• Ideal for automated placement
• Middle surge current capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
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TO-269AA (MBS)
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for power supply, lighting ballaster, battery
charger, home appliances, office equipment, and
telecommunication applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
max. 150 °C
T
J
200 V, 400 V, 600 V
0.5 A
30 A
5 µA
1.0 V
MECHANICAL DATA
Case: TO-269AA (MBS)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL B2S B4S B6S UNIT
Device marking code B2 B4 B6
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward output rectified current on
glass-epoxy P.C.B. (Fig. 1)
Peak forward surge current 10 msec single half sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms) I
Operating junction and storage temperature range T
Note:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
200 400 600 V
RRM
140 280 420 V
RMS
200 400 600 V
DC
I
0.5
F(AV)
I
30 A
FSM
2
t5.0 A
, T
- 55 to + 150 °C
J
STG
(1)
A
2
s
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Max. instantaneous forward voltage drop per diode 0.5 A V
Maximum DC reverse current at rated DC blocking
voltage per diode
Typical junction capacitance per diode 4.0 V, 1 MHz C
Document Number: 88893
Revision: 01-Feb-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
T
= 25 °C
A
T
= 125 °C
A
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
1.0 V
F
I
R
13 pF
J
5.0
100
www.vishay.com
µA
1
New Product
0
B2S, B4S & B6S
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL B2S B4S B6S UNIT
R
Typical thermal resistance
(1)
θJA
R
θJL
Note:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
B2S-E3/80 0.22 80 3000 13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
= 25 °C unless otherwise noted)
A
90
40
°C/W
.8
0.7
0.6
0.5
Glass
0.4
Epo xy
0.3
P.C.B.
0.2
0.1
Average Forward Rectified Current (A)
Resistive or Inductive Load
0
20
0
40
60
80
100
120
140
160
Ambient Temperature (°C)
Figure 1. Derating Curve for Output Rectified Current
35
30
25
f = 50 Hz
20
15
10
5
Peak Fo rward Surge Current (A)
0
1.0 Cycle
1
10
100
Number of Cycles
Figure 2. Maximum Non-Repetitive Peak Forward Surge
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 25 °C
Instantaneous Forward Current (A)
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Voltage Characteristics Per Diode
1000
100
10
1
Current (µA)
0.1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous Reverse Leakage
0.01
10
30
20
40
60
50
80
70
100
90
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Current Per Diode
www.vishay.com For technical questions within your region, please contact one of the following:
2
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88893
Revision: 01-Feb-08
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