Vishay AZ23B10-G, AZ23B11-G, AZ23B12-G, AZ23B13-G, AZ23B15-G Schematic [ru]

...
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Small Signal Zener Diodes, Dual
2
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
range nom. 2.7 to 51 V
V
Z
Test current I
specification Pulse current
V
Z
Int. construction Dual common anode
5mA
ZT
1
3
20456
AZ23-G-Series
Vishay Semiconductors
FEATURES
• Dual silicon planar Zener diodes, common anode
• The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C” in the ordering code. Replace “C” with “B” for 2 % tolerance.
• The parameters are valid for both diodes in one case. V is 5 %
• AEC-Q101 qualified
• ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified (part number available on request)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
and Rzj of the two diodes in one case
Z
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
AZ23-G-series
AZ23C2V7-G3-08 to AZ23C51-G3-08
AZ23B2V7-G3-08 to AZ23B51-G3-08
AZ23C2V7-G3-18 to AZ23C51-G3-18
AZ23B2V7-G3-18 to AZ23B51-G3-18
3000 (8 mm tape on 7" reel) 15 000
10 000 (8 mm tape on 13" reel) 10 000
PACKAGE
PACKAGE NAME WEIGHT
SOT-23 8.1 mg UL 94 V-0
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
Thermal resistance, junction to ambient air
Junction temperature
Storage temperature range
Zener current I
Operating temperature range
Device on fiberglass substrate,
Device on fiberglass substrate,
MOLDING COMPOUND
FLAMMABILITY RATING
= 25 °C, unless otherwise specified)
amb
see layout on page 6
see layout on page 6
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
P
tot
R
thJA
T
j
T
stg
Z
T
op
-65 to +150 °C
-55 to +150 °C
SOLDERING CONDITIONS
260 °C/10 s at terminals
300 mW
420 K/W
150 °C
P
tot/VZ
mA
Rev. 1.4, 04-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 85867
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AZ23-G-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
ZENER VOLTAGE
RANGE
VZ at I
ZT1
PART NUMBER
MARKING
CODE
= 25 °C, unless otherwise specified)
amb
(1)
TEST
CURRENT
I
ZT1
I
ZT2
REVERSE VOLTAGE
VR at I
DYNAMIC
RESISTANCE
ZZ at I
R
ZT1ZZK
at I
TEMPERATURE COEFFICIENT OF ZENER VOLTAGE
ZT2
VZ at I
V mA V nA 10-4/°C
MIN. NOM. MAX. MIN. MAX.
AZ23C2V7-G D41 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 -4
AZ23C3V0-G D42 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 -3
AZ23C3V3-G D43 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 -3
AZ23C3V6-G D44 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 -3
AZ23C3V9-G D45 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 -3
AZ23C4V3-G D46 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 -1
AZ23C4V7-G D47 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 2
AZ23C5V1-G D48 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 4
AZ23C5V6-G D49 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 6
AZ23C6V2-G D50 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 7
AZ23C6V8-G D51 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 2 7
AZ23C7V5-G D52 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 3 7
AZ23C8V2-G D53 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 4 7
AZ23C9V1-G D54 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 5 8
AZ23C10-G D55 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 5 8
AZ23C11-G D56 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 5 9
AZ23C12-G D57 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 6 9
AZ23C13-G D58 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 7 9
AZ23C15-G D59 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 7 9
AZ23C16-G D60 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 8 9.5
AZ23C18-G D61 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 8 9.5
AZ23C20-G D62 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 8 10
AZ23C22-G D63 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 8 10
AZ23C24-G D64 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 8 10
AZ23C27-G D65 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 8 10
AZ23C30-G D66 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 8 10
AZ23C33-G D67 31 33 35 5 1 > 25 100 40 (< 80) < 250 8 10
AZ23C36-G D68 34 36 38 5 1 > 27 100 40 (< 90) < 250 8 10
AZ23C39-G D69 37 39 41 5 1 > 29 100 50 (< 90) < 300 10 12
AZ23C43-G D70 40 43 46 5 1 > 32 100 60 (< 100) < 700 10 12
AZ23C47-G D71 44 47 50 5 1 > 35 100 70 (< 100) < 750 10 12
AZ23C51-G D72 48 51 50 5 1 > 38 100 70 (< 100) < 750 10 12
Note
(1)
Tested with pulses tp = 5 ms
ZT
Rev. 1.4, 04-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 85867
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AZ23-G-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
ZENER VOLTAGE
RANGE
VZ at I
ZT1
PART NUMBER
MARKING
CODE
= 25 °C, unless otherwise specified)
amb
(1)
TEST
CURRENT
I
ZT1
I
ZT2
REVERSE VOLTAGE
VR at I
DYNAMIC
RESISTANCE
ZZ at I
R
ZT1ZZK
at I
TEMPERATURE COEFFICIENT OF ZENER VOLTAGE
ZT2
VZ at I
V mA V nA 10-4/°C
MIN. NOM. MAX. MIN. MAX.
AZ23B2V7-G D41 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 -9 -4
AZ23B3V0-G D42 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 -3
AZ23B3V3-G D43 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 -3
AZ23B3V6-G D44 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 -3
AZ23B3V9-G D45 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 -3
AZ23B4V3-G D46 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 -1
AZ23B4V7-G D47 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 2
AZ23B5V1-G D48 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 4
AZ23B5V6-G D49 5.49 5.6 5.71 5 1 > 1 100 10 (< 40) < 400 -2 6
AZ23B6V2-G D50 6.08 6.2 6.32 5 1 > 2 100 4.8 (< 10) < 200 -1 7
AZ23B6V8-G D51 6.66 6.8 6.94 5 1 > 3 100 4.5 (< 8) < 150 2 7
AZ23B7V5-G D52 7.35 7.5 7.65 5 1 > 5 100 4 (< 7) < 50 3 7
AZ23B8V2-G D53 8.04 8.2 8.36 5 1 > 6 100 4.5 (< 7) < 50 4 7
AZ23B9V1-G D54 8.92 9.1 9.28 5 1 > 7 100 4.8 (< 10) < 50 5 8
AZ23B10-G D55 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 5 8
AZ23B11-G D56 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 5 9
AZ23B12-G D57 11.8 12 12.2 5 1 > 9 100 7 (< 20) < 90 6 9
AZ23B13-G D58 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 7 9
AZ23B15-G D59 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 7 9
AZ23B16-G D60 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 8 0.5
AZ23B18-G D61 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 8 0.5
AZ23B20-G D62 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 8 10
AZ23B22-G D63 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 8 10
AZ23B24-G D64 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 8 10
AZ23B27-G D65 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 8 10
AZ23B30-G D66 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 8 10
AZ23B33-G D67 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 8 10
AZ23B36-G D68 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 8 10
AZ23B39-G D69 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 10 12
AZ23B43-G D70 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 10 12
AZ23B47-G D71 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 10 12
AZ23B51-G D72 50 51 52 5 1 > 38 100 70 (< 100) < 750 10 12
Note
(1)
Tested with pulses tp = 5 ms
ZT
Rev. 1.4, 04-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 85867
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18114
mA 10
3
10
2
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
I
F
V
F
0 0.2 0.4 0.6 0.8 1V
TJ = 100 °C
T
J
= 25 °C
18115
mW
400
100
0
300
200
P
tot
T
amb
0 100 200 °C
500
18121
10
3
5 4
3 2
5 4
3
2
10
2
1
R
zth
5 4 3
2
10
Ω
1
2345 2345
10 100 V
VZ at IZ = 5 mA
negative
positive
ΔΔV
Z
T
j
R
zth
= R
thA
x VZ x
18122
100
7
5 4
3
2
7
5 4
3
2
1
Ω
R
zj
10
T
j
= 25 °C
I
Z
= 5 mA
1
2345 2345
10 100 V
V
Z
18123
Δ
25
20
15
10
5
0
- 5
mV/°C
Δ
V
Z
T
j
1
2345 2345
10 100 V
V
Z
5 mA
1 mA
20 mA
I
Z
=
AZ23-G-Series
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
Fig. 1 - Forward Characteristics
= 25 °C, unless otherwise specified)
amb
Fig. 4 - Thermal Differential Resistance vs. Zener Voltage
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Ω
3
10
7
5 4
R
3
zj
2
2
10
7
5 4
3
Rev. 1.4, 04-Mar-14
2
10
18120
Fig. 3 - Dynamic Resistance vs. Zener Current
For technical questions within your region: DiodesAmericas@vishay.com
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47 + 51
43 39 36
0.1
2345 2345
110
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I
Z
Tj = 25 °C
mA
Fig. 5 - Dynamic Resistance vs. Zener Voltage
Fig. 6 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
4
Document Number: 85867
www.vishay.com
18124
VZ at IZ = 5 mA
25
15
10
8
7
6.2
5.9
5.6
5.1
4.7
3.6
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 1
- 0.2
V
Z
V
T
j
020406080
100 120 140 C
Δ
18125
Δ
100
80
60
40
20
0
mV/°C
Δ
V
Z
T
j
0
20 40 80
60 100 V
V
Z
IZ = 5 mA
18126
Δ
9
7
5
3
1
- 1
V
V
Z
8
6
4
2
0
0
100
60
T
j
20 40 120
80 140 °C
I
Z
= 2 mA
51
43
36
Δ
V
Z
18127
1.6
1.4
1.2
0.8
0.6
0.4
0.2
- 0.2
- 0.4
Vishay Semiconductors
V
VZ = R
x I
Δ
zth
Z
1
0
1
2345 2345
AZ23-G-Series
10 100 V
VZ at IZ = 5 mA
Fig. 7 - Change of Zener Voltage vs. Junction Temperature
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
V
5
Δ
= R
x I
V
Z
zth
Z
4
Δ
V
Z
3
IZ = 5 mA
2
0
18128
1
0
20 40 60 80
= 2 mA
I
Z
V
Z
100 V
Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
50
Tj = 25 °C
40
l
Z
2.7
3.3
3.9
4.7
5.6
6.8
8.2
30
20
Test
current
10
5 mA
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 1.4, 04-Mar-14
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5
I
Z
0
1
0 10 V
23456789
18111
V
Z
Fig. 12 - Breakdown Characteristics
Document Number: 85867
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18112
10 20 30
0 40 V
V
Z
mA
30
20
10
0
l
Z
33
Test current I
Z
5 mA
Tj = 25 °C
10
12
15
18
22
27
36
18113
mA
10
8
6
4
2
0
l
Z
10
20 30 40 50 60 70 80 90
0 100 V
V
Z
43
39
Test
current
I
Z
5 mA
Tj = 25 °C
47
51
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
AZ23-G-Series
Vishay Semiconductors
Fig. 13 - Breakdown Characteristics
LAYOUT FOR R
thJA
TEST
Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm)
Fig. 14 - Breakdown Characteristics
Rev. 1.4, 04-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
6
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 85867
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Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009 17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
AZ23-G-Series
Vishay Semiconductors
Rev. 1.4, 04-Mar-14
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 85867
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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Revision: 02-Oct-12
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