Vishay 8TT100 Data Sheet
TO-220AC
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 8 A at 125 °C 0.58 V
F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 8 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
cathode
1
Cathode
Base
2
3
Anode
8 A
100 V
• Extremely low reverse leakage
• Optimized V
vs. IR trade off for high efficiency
F
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
8TT100
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
8 Apk, TJ = 125 °C (typical) 0.55
Range - 55 to 175 °C
100
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 8TT100 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 163 °C, rectangular waveform 8
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 210
TJ = 25 °C, IAS = 1.5 A, L = 60 mH 67 mJ
AS
Limited by frequency of operation and time pulse duration so
that T
< TJ max. IAS at TJ max. as a function of time pulse
J
See fig. 8
Following any rated
load condition and with
rated V
RRM
applied
T
850
I
AS
max.
J
at
A
A
Document Number: 94536 For technical questions, contact: diodes-tech@vishay.com
Revision: 05-Sep-08 1
www.vishay.com
8TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
8 A
Forward voltage drop V
FM
(1)
8 A
16 A - 0.85
16 A - 0.69
Reverse leakage current I
Junction capacitance C
Series inductance L
RM
T
= 125 °C - 4 mA
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 520 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC 8TT100
T
, T
J
Stg
R
DC operation 2
thJC
R
thCS
Mounting surface, smooth and greased 0.5
-0.72
-0.58
-65µA
- 10 000 V/µs
- 55 to 175 °C
°C/W
2g
0.07 oz.
kgf · cm
(lbf · in)
V
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94536
2 Revision: 05-Sep-08
8TT100
100
Tj = 175°C
(A)
F
10
Instantaneous Forward Current - I
Tj = 125°C
High Performance
Schottky Generation 5.0, 8 A
(mA)
R
0.01
Reverse Current - I
0.001
0.0001
1000
(pF)
T
Vishay High Power Products
100
175°C
10
1
0.1
0 20406080100
Fig. 2 - Typical Values of Reverse Current vs.
150°C
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - VR (V)
Reverse Voltage
Tj = 25°C
1
0.0 0.5 1.0 1.5 2.0
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
D = 0.5
1
(°C/W)
thJC
0.1
0.01
D = 0.33
D = 0.25
D = 0.2
Thermal Impedance Z
0.001
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Fig. 4 - Maximum Thermal Impedance Z
D = 0.75
Single Pulse
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
100
Junction Capacitance - C
10
0 20 40 60 80 100 120
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Characteristics
thJC
Document Number: 94536 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Sep-08 3
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