Vishay 8TT100 Data Sheet

8TT100

Vishay High Power Products

High Performance

Schottky Generation 5.0, 8 A

Base
cathode
2
1	3

TO-220AC

Cathode Anode

FEATURES

• 175 °C high performance Schottky diode

•	Very low forward voltage drop
•	Extremely low reverse leakage	RoHS
•	Optimized VF vs. IR trade off for high efficiency	COMPLIANT

•Increased ruggedness for reverse avalanche capability

•RBSOA available

•Negligible switching losses

•Submicron trench technology

•Full lead (Pb)-free and RoHS compliant devices

•Designed and qualified for industrial level

			APPLICATIONS
			• High efficiency SMPS
PRODUCT SUMMARY			• Automotive
IF(AV)		8 A	• High frequency switching
VR		100 V	• Output rectification
VF at 8 A at 125 °C		0.58 V	• Reverse battery protection
			• Freewheeling
			• Dc-to-dc systems
			• Increased power density systems

MAJOR RATINGS AND CHARACTERISTICS

	SYMBOL	CHARACTERISTICS	VALUES	UNITS
	VRRM		100	V
	VF	8 Apk, TJ = 125 °C (typical)	0.55
	TJ	Range	- 55 to 175	°C

VOLTAGE RATINGS

PARAMETER	SYMBOL	TEST CONDITIONS	8TT100	UNITS
Maximum DC reverse voltage	VR	TJ = 25 °C	100	V

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS			VALUES	UNITS
	Maximum average forward	IF(AV)	50 % duty cycle at TC = 163 °C, rectangular waveform			8
	current
							A
	Maximum peak one cycle		5 µs sine or 3 µs rect. pulse		Following any rated	850
		IFSM			load condition and with
	non-repetitive surge current		10 ms sine or 6 ms rect. pulse			210
					rated VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1.5 A, L = 60 mH			67	mJ
			Limited by frequency of operation and time pulse duration so			IAS at
	Repetitive avalanche current	IAR	that TJ < TJ max. IAS at TJ max. as a function of time pulse				A
						TJ max.
			See fig. 8

Document Number: 94536	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 05-Sep-08		1

8TT100

Vishay High Power Products			High Performance
			Schottky Generation 5.0, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL	TEST CONDITIONS		TYP.		MAX.			UNITS
			8 A	TJ = 25 °C	-		0.72
Forward voltage drop		VFM (1)	16 A		-		0.85			V
			8 A	TJ = 125 °C	-		0.58
			16 A		-		0.69
Reverse leakage current		IRM (1)	TJ = 25 °C	VR = Rated VR	-		65			µA
			TJ = 125 °C		-		4			mA
Junction capacitance		CT	VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		520		-			pF
Series inductance		LS	Measured lead to lead 5 mm from package body		8.0		-			nH
Maximum voltage rate of change		dV/dt	Rated VR		-		10 000			V/µs
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL	TEST CONDITIONS		VALUES				UNITS
Maximum junction and		TJ, TStg			- 55 to 175					°C
storage temperature range
Maximum thermal resistance,		RthJC	DC operation		2
junction to case
										°C/W
Typical thermal resistance,		RthCS	Mounting surface, smooth and greased		0.5
case to heatsink
Approximate weight					2					g
					0.07					oz.
Mounting torque	minimum				6 (5)				kgf · cm
									(lbf · in)
	maximum				12 (10)
Marking device			Case style TO-220AC			8TT100

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94536
2		Revision: 05-Sep-08

		8TT100
	High Performance	Vishay High Power Products
	Schottky Generation 5.0, 8 A

	100
		Tj = 175°C
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>F
<![if ! IE]> <![endif]>-I
<![if ! IE]> <![endif]>InstantaneousForwardCurrent	10
			Tj = 125°C
			Tj = 25°C
	1
	0.0	0.5	1.0	1.5	2.0

ForwardVoltageDrop-VFM(V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

		100
		10	175°C
	<![if ! IE]> <![endif]>(mA)		150°C
		1	125°C
	<![if ! IE]> <![endif]>IR
	<![if ! IE]> <![endif]>-		100°C
	<![if ! IE]> <![endif]>ReverseCurrent
		0.1	25°C
			75°C
		0.01	50°C
		0.001

0.0001

0

20

40

60

80

100

ReverseVoltage-VR(V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

	1000
<![if ! IE]> <![endif]>(pF)
<![if ! IE]> <![endif]>T
<![if ! IE]> <![endif]>-C
<![if ! IE]> <![endif]>JunctionCapacitance	100
	10
	0	20	40	60	80	100	120

ReverseVoltage-VR(V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10
	D = 0.5	D = 0.75
1	D = 0.33
	D = 0.25
0.1	D = 0.2
		Single Pulse
0.01	(Thermal Resistance)
<![if ! IE]> <![endif]>(°C/W)ThermalImpedanceZthJC
0.001
1E-05	1E-04	1E-03	1E-02	1E-01	1E+00
		t1,RectangularPulseDuration(Seconds)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94536	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 05-Sep-08		3