8TQ100GPbF
Vishay High Power Products
Schottky Rectifier, 8 A
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Base |
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cathode |
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TO-220AC |
Cathode |
Anode |
FEATURES
•175 °C TJ operation
•Low forward voltage drop
•High frequency operation
•High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Pb-free
Available
RoHS*
COMPLIANT
•Guard ring for enhanced ruggedness and long term reliability
•Lead (Pb)-free (“PbF” suffix)
•Designed and qualified for industrial level
PRODUCT SUMMARY
IF(AV) |
8 A |
VR |
100 V |
DESCRIPTION
The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
CHARACTERISTICS |
VALUES |
UNITS |
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IF(AV) |
Rectangular waveform |
8 |
A |
VRRM |
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100 |
V |
IFSM |
tp = 5 µs sine |
850 |
A |
VF |
8 Apk, TJ = 125 °C |
0.58 |
V |
TJ |
Range |
- 55 to 175 |
°C |
VOLTAGE RATINGS
PARAMETER |
SYMBOL |
8TQ100GPbF |
UNITS |
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Maximum DC reverse voltage |
VR |
100 |
V |
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Maximum working peak reverse voltage |
VRWM |
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ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum average forward current |
IF(AV) |
50 % duty cycle at TC = 157 °C, rectangular waveform |
8 |
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See fig. 5 |
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A |
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Maximum peak one cycle |
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5 µs sine or 3 µs rect. pulse |
Following any rated load |
850 |
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non-repetitive surge current |
IFSM |
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condition and with rated |
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10 ms sine or 6 ms rect. pulse |
230 |
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See fig. 7 |
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VRRM applied |
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Non-repetitive avalanche energy |
EAS |
TJ = 25 °C, IAS = 0.50 A, L = 60 mH |
7.50 |
mJ |
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Repetitive avalanche current |
IAR |
Current decaying linearly to zero in 1 µs |
0.50 |
A |
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Frequency limited by TJ maximum VA = 1.5 x VR typical |
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* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94263 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 17-Apr-08 |
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8TQ100GPbF
Vishay High Power Products |
Schottky Rectifier, 8 A |
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ELECTRICAL SPECIFICATIONS |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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8 A |
TJ = 25 °C |
0.72 |
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Maximum forward voltage drop |
VFM (1) |
16 A |
0.88 |
V |
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See fig. 1 |
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8 A |
TJ = 125 °C |
0.58 |
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16 A |
0.69 |
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Maximum reverse leakage curent |
IRM (1) |
TJ = 25 °C |
VR = Rated VR |
0.28 |
mA |
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See fig. 2 |
TJ = 125 °C |
7 |
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Maximum junction capacitance |
CT |
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C |
500 |
pF |
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Typical series inductance |
LS |
Measured lead to lead 5 mm from package body |
8 |
nH |
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Maximum voltage rate of change |
dV/dt |
Rated VR |
10 000 |
V/µs |
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Note |
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(1) Pulse width < 300 µs, duty cycle < 2 % |
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THERMAL - MECHANICAL SPECIFICATIONS |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum junction and |
TJ, TStg |
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- 55 to 175 |
°C |
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storage temperature range |
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Maximum thermal resistance, |
RthJC |
DC operation |
2.0 |
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junction to case |
See fig. 4 |
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°C/W |
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Typical thermal resistance, |
RthCS |
Mounting surface, smooth and greased |
0.50 |
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case to heatsink |
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Approximate weight |
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2 |
g |
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0.07 |
oz. |
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Mounting torque |
minimum |
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6 (5) |
kgf · cm |
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(lbf · in) |
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maximum |
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12 (10) |
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Marking device |
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Case style TO-220AC |
8TQ100G |
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www.vishay.com |
For technical questions, contact: diodes-tech@vishay.com |
Document Number: 94263 |
2 |
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Revision: 17-Apr-08 |
8TQ100GPbF |
Schottky Rectifier, 8 A Vishay High Power Products |
<![if ! IE]> <![endif]>(A) |
1000 |
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<![if ! IE]> <![endif]>Current |
100 |
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<![if ! IE]> <![endif]>Forward |
10 |
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<![if ! IE]> <![endif]>- Instantaneous |
1 |
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TJ = 175 °C |
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TJ = 125 °C |
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TJ = 25 °C |
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0.1 |
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<![if ! IE]> <![endif]>F |
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0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
1.8 |
2.0 |
2.2 |
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<![if ! IE]> <![endif]>I |
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VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
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100 |
TJ = 175 °C |
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<![if ! IE]> <![endif]>(µA) |
10 |
TJ = 150 °C |
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TJ = 125 °C |
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<![if ! IE]> <![endif]>Current |
1 |
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TJ = 100 °C |
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0.1 |
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<![if ! IE]> <![endif]>- Reverse |
TJ = 75 °C |
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0.01 |
TJ = 50 °C |
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TJ = 25 °C |
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<![if ! IE]> <![endif]>R |
0.001 |
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<![if ! IE]> <![endif]>I |
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0.0001 |
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0 |
20 |
40 |
60 |
80 |
100 |
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000 |
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<![if ! IE]> <![endif]>Capacitance (pF) |
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<![if ! IE]> <![endif]>- Junction |
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TJ = 25 °C |
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<![if ! IE]> <![endif]>T |
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<![if ! IE]> <![endif]>C |
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100 |
10 |
20 |
30 |
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50 |
60 |
70 |
80 |
90 100 110 |
0 |
40 |
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
<![endif]>ZthJC - Thermal Impedance (°C/W)
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
Single pulse (thermal resistance)
0.1 |
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0.0001 |
0.001 |
0.01 |
0.1 |
1 |
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94263 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 17-Apr-08 |
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3 |