Vishay 8TQ100GPBF Data Sheet

TO-220AC
Schottky Rectifier, 8 A
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
cathode
1
Cathode
Base
2
3
Anode
8TQ100GPbF
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
PRODUCT SUMMARY
I
F(AV)
V
R
8 A
100 V
The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
DESCRIPTION
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 8 A
100 V
tp = 5 µs sine 850 A
8 Apk, TJ = 125 °C 0.58 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 8TQ100GPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 157 °C, rectangular waveform 8
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 230
TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
applied
RRM
850
0.50 A
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94263 For technical questions, contact: diodes-tech@vishay.com Revision: 17-Apr-08 1
www.vishay.com
8TQ100GPbF
Vishay High Power Products
Schottky Rectifier, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
8 A
Maximum forward voltage drop
See fig. 1
(1)
V
FM
16 A 0.88
8 A
16 A 0.69
Maximum reverse leakage curent See fig. 2
I
RM
Maximum junction capacitance C
Typical series inductance L
(1)
T
S
TJ = 25 °C
T
= 125 °C 7
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Measured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.72
0.58
0.28
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC 8TQ100G
T
, T
J
Stg
DC operation
R
thJC
R
thCS
See fig. 4
Mounting surface, smooth and greased 0.50
- 55 to 175 °C
2.0
2g
0.07 oz.
kgf · cm
(lbf · in)
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94263
2 Revision: 17-Apr-08
8TQ100GPbF
1000
100
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0 2.20.8 1.2
Schottky Rectifier, 8 A
TJ = 175 °C T
= 125 °C
J
= 25 °C
T
J
0.2 0.6 1.0 1.4 1.6 2.0
0.4 1.8
VFM - Forward Voltage Drop (V)
- Reverse Current (µA)
R
I
Vishay High Power Products
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
0.001
0.0001
0
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
20 60 80 10040
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
10
20 60 80
0 40 100
50
30
70 90
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
1
- Thermal Impedance (°C/W)
thJC
Z
0.1
0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
110
1
Characteristics
Document Number: 94263 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 17-Apr-08 3
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