Vishay 8GBU Series Data Sheet
PART OBSOLETE - EOL18
Bulletin I2719 rev. F 11/02
8GBU Series
8.0 Amps Single Phase Full Wave Bridge Rectifier
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
RMS
)
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters 8GBU Units
I
O
@ T
C
I
@ 50Hz 200 A
FSM
@ 60Hz 210 A
8A
100 °C
I
O(AV)
V
= 50/ 1200V
RRM
= 8A
I2t @ 50Hz 200 A2s
@ 60Hz 184 A2s
V
range 50 to 1200 V
RRM
T
J
- 55 to 150
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8GBU
o
C
1
8GBU Series
Bulletin I2719 rev. F 11/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak rev. voltage peak rev. voltage voltage @ rated V
V V V V µA µA
8GBU 005 50 80 35 5 400
01 100 150 70 5 400
02 200 300 140 5 400
04 400 500 280 5 400
06 600 725 420 5 400
08 800 900 560 5 400
10 1000 1100 700 5 400
12 1200 1300 850 5 400
, max repetitive V
RRM
TJ = T
max. T
J
, max non-repetitive V
RSM
= T
max. T
J
J
, max RMS I
RMS
= T
max. T
J
J
max. I
RRM
RRM
= 25°C T
J
Forward Conduction
Parameters 8GBU Unit Conditions
I
Maximum DC output current 8.0 A TC = 100°C, Resistive & inductive load
O
I
Maximum peak, one-cycle 200 t = 10ms
FSM
non-repetitive surge current,
following any rated load condition 210 t = 8.3ms TJ = 150°C
and with rated V
reapplied
RRM
I2t Maximum I2t for fusing, 200 A2s t = 10ms
initial TJ = TJ max 184 t = 8.3ms
V
Maximum peak forward voltage 1.0 V TJ = 25 oC, IFM = 8A
FM
per diode
I
Typical peak reverse leakage 5.0 µA TJ = 2 5 oC, 100% V
RM
curren t per diode 400 TJ = 150 oC, 100% V
V
Maximum repetitive peak 50 to 1200 V
RRM
reverse voltage range
6.4 TC = 100°C, Capacitive load
RRM
RRM
max.
RRM
@ rated V
= 150°C
J
RRM
Thermal and Mechanical Specifications
Parameters 8GBU Unit Conditions
T
Operating and storage -55 to 150
J
T
temperature range
stg
R
Max. thermal resistance 2.2 °C/ W D C rated current through bridge (1)
thJC
junction to case
R
Thermal resistance, 21 °C/ W DC rated current through bridge (1)
thJA
junction to ambient
W Approximate weight 4 (0.14) g (oz)
T Mounting Torque 1.0 Nm Bridge to Heatsink
9.0 Lb.in
Note (1): Bridge mounted on Aluminun heat sink of dim 82x82x3.0mm, use silicon thermal compound heat
transfer and bolt down using 3mm screw
2
o
C
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