8EWS..SPbF High Voltage Series
Vishay High Power Products
Surface Mountable
Input Rectifier Diode, 8 A
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Base |
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cathode |
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4, 2 |
D-PAK |
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3 |
Anode |
Anode |
PRODUCT SUMMARY
VF at 5 A |
1 V |
IFSM |
200 A |
VRRM |
800/1200 V |
DESCRIPTION/FEATURES
The 8EWS..SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation
technology used has reliable operation up to 150 °C junction temperature.
The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability.
Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial level.
Compliant to RoHS directive 2002/95/EC.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS |
SINGLE-PHASE BRIDGE |
THREE-PHASE BRIDGE |
UNITS |
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NEMA FR-4 or G10 glass fabric-based epoxy |
1.2 |
1.6 |
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with 4 oz. (140 µm) copper |
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A |
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Aluminum IMS, RthCA = 15 °C/W |
2.5 |
2.8 |
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Aluminum IMS with heatsink, RthCA = 5 °C/W |
5.5 |
6.5 |
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Note
•TA = 55 °C, TJ = 125 °C, footprint 300 mm2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
CHARACTERISTICS |
VALUES |
UNITS |
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IF(AV) |
Sinusoidal waveform |
8 |
A |
VRRM |
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800/1200 |
V |
IFSM |
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200 |
A |
VF |
8 A, TJ = 25 °C |
1.10 |
V |
TJ |
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- 55 to 150 |
°C |
VOLTAGE RATINGS
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VRRM, MAXIMUM |
VRSM, MAXIMUM NON-REPETITIVE |
IRRM |
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PART NUMBER |
PEAK REVERSE VOLTAGE |
PEAK REVERSE VOLTAGE |
AT 150 °C |
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V |
V |
mA |
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8EWS08SPbF |
800 |
900 |
0.5 |
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8EWS12SPbF |
1200 |
1300 |
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Document Number: 94349 |
For technical questions, contact: diodestech@vishay.com |
www.vishay.com |
Revision: 01-Jul-09 |
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8EWS..SPbF High Voltage Series
Vishay High Power Products |
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Surface Mountable |
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Input Rectifier Diode, 8 A |
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ABSOLUTE MAXIMUM RATINGS |
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PARAMETER |
SYMBOL |
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TEST CONDITIONS |
VALUES |
UNITS |
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Maximum average forward current |
IF(AV) |
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TC = 105 °C, 180° conduction half sine wave |
8 |
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Maximum peak one cycle |
IFSM |
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10 ms sine pulse, rated VRRM applied |
170 |
A |
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non-repetitive surge current |
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10 ms sine pulse, no voltage reapplied |
200 |
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Maximum I2t for fusing |
I2t |
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10 ms sine pulse, rated VRRM applied |
130 |
A2s |
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10 ms sine pulse, no voltage reapplied |
145 |
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Maximum I2√t for fusing |
I2√t |
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t = 0.1 ms to 10 ms, no voltage reapplied |
1450 |
A2√s |
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ELECTRICAL SPECIFICATIONS |
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PARAMETER |
SYMBOL |
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TEST CONDITIONS |
VALUES |
UNITS |
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Maximum forward voltage drop |
VFM |
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8 A, TJ = 25 °C |
1.1 |
V |
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Forward slope resistance |
rt |
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TJ = 150 °C |
20 |
mΩ |
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Threshold voltage |
VF(TO) |
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0.82 |
V |
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Maximum reverse leakage current |
IRM |
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TJ = 25 °C |
VR = Rated VRRM |
0.05 |
mA |
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TJ = 150 °C |
0.50 |
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THERMAL - MECHANICAL SPECIFICATIONS |
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PARAMETER |
SYMBOL |
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TEST CONDITIONS |
VALUES |
UNITS |
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Maximum junction and storage |
TJ, TStg |
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- 55 to 150 |
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temperature range |
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°C |
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Soldering temperature |
TS |
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240 |
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Maximum thermal resistance, |
RthJC |
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DC operation |
2.5 |
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junction to case |
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°C/W |
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Typical thermal resistance, |
RthJA (1) |
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62 |
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junction to ambient (PCB mount) |
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Approximate weight |
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1 |
g |
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0.03 |
oz. |
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Marking device |
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Case style D-PAK (TO-252AA) |
8EWS12S |
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Note
(1)When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994
www.vishay.com |
For technical questions, contact: diodestech@vishay.com |
Document Number: 94349 |
2 |
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Revision: 01-Jul-09 |
8EWS..SPbF High Voltage Series
Surface Mountable |
Vishay High Power Products |
Input Rectifier Diode, 8 A |
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150 |
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8EWS. Series |
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<![if ! IE]> <![endif]>MaximumAllowable Case |
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140 |
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RthJC (DC) = 2.5 °C/W |
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<![if ! IE]> <![endif]>Temperature (°C) |
130 |
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120 |
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110 |
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100 |
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30° |
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90 |
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60° |
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90° |
120° |
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180° |
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80 |
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10 |
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0 |
2 |
4 |
6 |
8 |
12 |
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
<![endif]>Power Loss (W)
<![if ! IE]><![endif]>Maximum Average Forward
20 |
DC |
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180° |
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16 |
120° |
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90° |
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14 |
60° |
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12 |
30° |
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RMS limit |
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10 |
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8 |
Ø |
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Conduction period |
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4 |
8EWS. Series |
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2 |
TJ = 150 °C |
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4 |
6 |
8 |
10 |
12 |
14 |
16 |
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
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150 |
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8EWS. Series |
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<![if ! IE]> <![endif]>AllowableMaximumCase |
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140 |
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RthJC (DC) = 2.5 °C/W |
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<![if ! IE]> <![endif]>(°C)Temperature |
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<![if ! IE]> <![endif]>WaveSineHalfPeak |
<![if ! IE]> <![endif]>CurrentForward(A) |
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130 |
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90° |
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Ø |
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Conduction period |
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120 |
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110 |
30° |
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100 |
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60° |
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120° |
180° |
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DC |
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90 |
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0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
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200 180 160 140 120 100 80 60 40
At any rated load condition and with rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
8EWS. Series
1 |
10 |
100 |
Average Forward Current (A) |
Number of Equal Amplitude Half |
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Cycle Current Pulse (N) |
Fig. 2 - Current Rating Characteristics |
Fig. 5 - Maximum Non-Repetitive Surge Current |
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16 |
180° |
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<![if ! IE]> <![endif]>AverageMaximumForward |
<![if ! IE]> <![endif]>LossPower(W) |
14 |
120° |
<![if ! IE]> <![endif]>HalfPeakSine Wave |
<![if ! IE]> <![endif]>CurrentForward(A) |
2 |
8EWS. Series |
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90° |
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12 |
60° |
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30° |
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10 |
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8 |
RMS limit |
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6 |
Ø |
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4 |
Conduction angle |
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TJ = 150 °C |
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0
0 |
2 |
4 |
6 |
8 |
10 |
240 220 200 180 160 140 120 100 80 60 40
0.01
Maximum non-repetitive surge current
versus pulse train duration. Initial TJ = 150 °C No voltage reapplied
Rated VRRM reapplied
8EWS. Series
0.1 |
1 |
Average Forward Current (A) |
Pulse Train Duration (s) |
Fig. 3 - Forward Power Loss Characteristics |
Fig. 6 - Maximum Non-Repetitive Surge Current |
Document Number: 94349 |
For technical questions, contact: diodestech@vishay.com |
www.vishay.com |
Revision: 01-Jul-09 |
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3 |