Vishay 8EWS..SPbF High Voltage Series Data Sheet

8EWS..SPbF High Voltage Series

Vishay High Power Products

Surface Mountable

Input Rectifier Diode, 8 A

 

Base

 

cathode

 

 

4, 2

D-PAK

1

3

Anode

Anode

PRODUCT SUMMARY

VF at 5 A

1 V

IFSM

200 A

VRRM

800/1200 V

DESCRIPTION/FEATURES

The 8EWS..SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

technology used has reliable operation up to 150 °C junction temperature.

The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability.

Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines.

This product has been designed and qualified for industrial level.

Compliant to RoHS directive 2002/95/EC.

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

 

 

 

 

NEMA FR-4 or G10 glass fabric-based epoxy

1.2

1.6

 

with 4 oz. (140 µm) copper

 

 

 

A

 

 

 

Aluminum IMS, RthCA = 15 °C/W

2.5

2.8

 

Aluminum IMS with heatsink, RthCA = 5 °C/W

5.5

6.5

 

Note

TA = 55 °C, TJ = 125 °C, footprint 300 mm2

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

 

 

 

 

IF(AV)

Sinusoidal waveform

8

A

VRRM

 

800/1200

V

IFSM

 

200

A

VF

8 A, TJ = 25 °C

1.10

V

TJ

 

- 55 to 150

°C

VOLTAGE RATINGS

 

VRRM, MAXIMUM

VRSM, MAXIMUM NON-REPETITIVE

IRRM

PART NUMBER

PEAK REVERSE VOLTAGE

PEAK REVERSE VOLTAGE

AT 150 °C

 

V

V

mA

 

 

 

 

8EWS08SPbF

800

900

0.5

 

 

 

8EWS12SPbF

1200

1300

 

 

 

 

 

Document Number: 94349

For technical questions, contact: diodestech@vishay.com

www.vishay.com

Revision: 01-Jul-09

 

1

8EWS..SPbF High Voltage Series

Vishay High Power Products

 

Surface Mountable

 

 

 

 

Input Rectifier Diode, 8 A

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS

 

 

 

 

 

PARAMETER

SYMBOL

 

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

 

Maximum average forward current

IF(AV)

 

TC = 105 °C, 180° conduction half sine wave

8

 

Maximum peak one cycle

IFSM

 

10 ms sine pulse, rated VRRM applied

170

A

non-repetitive surge current

 

10 ms sine pulse, no voltage reapplied

200

 

 

 

 

 

 

 

 

 

 

 

Maximum I2t for fusing

I2t

 

10 ms sine pulse, rated VRRM applied

130

A2s

 

10 ms sine pulse, no voltage reapplied

145

 

 

 

 

 

 

 

 

 

 

 

Maximum I2√t for fusing

I2√t

 

t = 0.1 ms to 10 ms, no voltage reapplied

1450

A2√s

 

 

 

 

 

 

 

ELECTRICAL SPECIFICATIONS

 

 

 

 

 

PARAMETER

SYMBOL

 

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

Maximum forward voltage drop

VFM

 

8 A, TJ = 25 °C

1.1

V

Forward slope resistance

rt

 

TJ = 150 °C

20

Threshold voltage

VF(TO)

 

0.82

V

 

 

 

Maximum reverse leakage current

IRM

 

TJ = 25 °C

VR = Rated VRRM

0.05

mA

 

TJ = 150 °C

0.50

 

 

 

 

 

 

 

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

 

 

PARAMETER

SYMBOL

 

TEST CONDITIONS

VALUES

UNITS

 

 

 

 

 

 

 

Maximum junction and storage

TJ, TStg

 

 

 

- 55 to 150

 

temperature range

 

 

 

°C

 

 

 

 

 

Soldering temperature

TS

 

 

 

240

 

Maximum thermal resistance,

RthJC

 

DC operation

2.5

 

junction to case

 

 

 

 

 

 

 

°C/W

 

 

 

 

 

 

Typical thermal resistance,

RthJA (1)

 

 

 

62

 

 

 

 

junction to ambient (PCB mount)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Approximate weight

 

 

 

 

1

g

 

 

 

 

 

 

 

 

 

 

0.03

oz.

 

 

 

 

 

 

 

 

 

 

 

Marking device

 

 

Case style D-PAK (TO-252AA)

8EWS12S

 

 

 

 

 

 

 

Note

(1)When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994

www.vishay.com

For technical questions, contact: diodestech@vishay.com

Document Number: 94349

2

 

Revision: 01-Jul-09

Vishay 8EWS..SPbF High Voltage Series Data Sheet

8EWS..SPbF High Voltage Series

Surface Mountable

Vishay High Power Products

Input Rectifier Diode, 8 A

 

 

 

150

 

 

8EWS. Series

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>MaximumAllowable Case

 

140

 

 

RthJC (DC) = 2.5 °C/W

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Temperature (°C)

130

 

 

 

 

 

 

120

 

 

 

 

 

 

110

 

 

 

 

 

 

100

 

30°

 

 

 

 

 

 

 

 

 

 

90

 

 

60°

 

 

 

 

 

 

 

 

90°

120°

 

 

 

 

 

 

 

 

 

180°

 

 

80

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

0

2

4

6

8

12

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

<![if ! IE]>

<![endif]>Power Loss (W)

<![if ! IE]>

<![endif]>Maximum Average Forward

20

DC

18

180°

 

16

120°

90°

 

14

60°

12

30°

RMS limit

 

10

 

8

Ø

6

Conduction period

 

4

8EWS. Series

 

2

TJ = 150 °C

0

 

0

2

4

6

8

10

12

14

16

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

 

 

150

 

 

 

8EWS. Series

 

 

 

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>AllowableMaximumCase

 

140

 

 

 

RthJC (DC) = 2.5 °C/W

 

 

 

<![if ! IE]>

<![endif]>(°C)Temperature

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>WaveSineHalfPeak

<![if ! IE]>

<![endif]>CurrentForward(A)

130

 

 

 

90°

 

 

Ø

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Conduction period

 

 

 

 

120

 

 

 

 

 

 

 

 

 

 

 

 

110

30°

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

60°

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

120°

180°

 

DC

 

 

 

 

90

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

2

4

6

8

10

12

14

16

18

 

200 180 160 140 120 100 80 60 40

At any rated load condition and with rated VRRM applied following surge.

Initial TJ = 150 °C

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

8EWS. Series

1

10

100

Average Forward Current (A)

Number of Equal Amplitude Half

 

Cycle Current Pulse (N)

Fig. 2 - Current Rating Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

 

 

16

180°

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>AverageMaximumForward

<![if ! IE]>

<![endif]>LossPower(W)

14

120°

<![if ! IE]>

<![endif]>HalfPeakSine Wave

<![if ! IE]>

<![endif]>CurrentForward(A)

2

8EWS. Series

 

 

 

90°

 

 

 

 

12

60°

 

 

 

 

 

30°

 

 

 

 

10

 

 

 

 

 

8

RMS limit

 

 

 

 

 

 

 

 

 

6

Ø

 

 

 

 

4

Conduction angle

 

 

 

 

 

 

 

 

 

 

TJ = 150 °C

 

 

0

0

2

4

6

8

10

240 220 200 180 160 140 120 100 80 60 40

0.01

Maximum non-repetitive surge current

versus pulse train duration. Initial TJ = 150 °C No voltage reapplied

Rated VRRM reapplied

8EWS. Series

0.1

1

Average Forward Current (A)

Pulse Train Duration (s)

Fig. 3 - Forward Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 94349

For technical questions, contact: diodestech@vishay.com

www.vishay.com

Revision: 01-Jul-09

 

3

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