Vishay 8EWS..SPbF High Voltage Series Data Sheet

D-PAK

PRODUCT SUMMARY

VF at 5 A 1 V

I

FSM

V

RRM

8EWS..SPbF High Voltage Series

Surface Mountable

Input Rectifier Diode, 8 A

DESCRIPTION/FEATURES

cathode

1

Anode

Base

4, 2

3

Anode

200 A

800/1200 V

The 8EWS..SPbF rectifier High Voltage Series has
been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation
technology used has reliable operation up to 150 °C junction
temperature.

The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability.

Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.

This product has been designed and qualified for industrial
level.

Compliant to RoHS directive 2002/95/EC.

Vishay High Power Products

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 µm) copper

Aluminum IMS, R

Aluminum IMS with heatsink, R

Note

•T

= 55 °C, TJ = 125 °C, footprint 300 mm

A

= 15 °C/W 2.5 2.8

thCA

= 5 °C/W 5.5 6.5

thCA

2

1.2 1.6

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 8 A

800/1200 V

200 A

8 A, TJ = 25 °C 1.10 V

- 55 to 150 °C

VOLTAGE RATINGS

, MAXIMUM

V

RRM

PART NUMBER

8EWS08SPbF 800 900

8EWS12SPbF 1200 1300

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

0.5

A

Document Number: 94349 For technical questions, contact: [e-mail]
Revision: 01-Jul-09 1

www.vishay.com

8EWS..SPbF High Voltage Series

Vishay High Power Products

Surface Mountable

Input Rectifier Diode, 8 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1450 A2√s

F(AV)

I

FSM

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

F(TO)

RM

TC = 105 °C, 180° conduction half sine wave 8

10 ms sine pulse, rated V

applied 170

RRM

10 ms sine pulse, no voltage reapplied 200

10 ms sine pulse, rated V

applied 130

RRM

10 ms sine pulse, no voltage reapplied 145

FM

8 A, TJ = 25 °C 1.1 V

t

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 0.50

J

V

= Rated V

R

RRM

20 mΩ

0.82 V

0.05

A

A

mA

2

s

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Soldering temperature T

Maximum thermal resistance,
junction to case

Typical thermal resistance,
junction to ambient (PCB mount)

Approximate weight

Marking device Case style D-PAK (TO-252AA) 8EWS12S

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

T

, T

J

Stg

S

R

DC operation 2.5

thJC

(1)

62

R

thJA

- 55 to 150

240

1g

0.03 oz.

°C

°C/W

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94349

2 Revision: 01-Jul-09

8EWS..SPbF High Voltage Series

150

140

130

120

110

100

Temperature (°C)

Maximum Allowable Case

90

80

0

30°

2

468

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

150

140

130

120

110

Temperature (°C)

100

Maximum Allowable Case

90

30°

60°

0

4268

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

8EWS. Series
R

(DC) = 2.5 °C/W

thJC

60°

90°

8EWS. Series

(DC) = 2.5 °C/W

R

thJC

90°

120°

10 12 14

Input Rectifier Diode, 8 A

120°

180°

10

Ø

Conduction period

180°

DC

16

Surface Mountable

Maximum Average Forward

12

Peak Half Sine Wave

18

Vishay High Power Products

20

18

16

14

12

10

Power Loss (W)

200

180

160

140

120

100

80

Forward Current (A)

60

40

DC
180°
120°

90°
60°
30°

8

6

4

2

0

0

246

Average Forward Current (A)

Conduction period

8EWS. Series
T

= 150 °C

J

81012

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with

rated V

8EWS. Series

1

applied following surge.

RRM

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

Number of Equal Amplitude Half

Cycle Current Pulse (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

RMS limit

Ø

14

16

100

16

14

12

10

Power Loss (W)

Maximum Average Forward

180°
120°

90°
60°
30°

8

6

4

2

0

0

RMS limit

4268

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

Ø

Conduction angle

8EWS. Series
T

= 150 °C

J

10

240

220

200

180

160

140

120

100

Forward Current (A)

Peak Half Sine Wave

80

60

40

0.01

Maximum non-repetitive surge current

8EWS. Series

Pulse Train Duration (s)

versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

0.1

Fig. 6 - Maximum Non-Repetitive Surge Current

RRM

reapplied

1

Document Number: 94349 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Jul-09 3