Vishay 8EWS16SPbF High Voltage Series Data Sheet

8EWS16SPbF High Voltage Series
Vishay High Power Products
Surface Mountable
Input Rectifier Diode, 8 A
DESCRIPTION/FEATURES
D-PAK
PRODUCT SUMMARY
VF at 10 A 1 V
I
FSM
V
RRM
Base
cathode
4
13
2
Cathode
Anode Anode
200 A
1600 V
The 8EWS16SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature.
The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability.
Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial level.
Compliant to RoHS directive 2002/95/EC.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 µm) copper
Aluminum IMS, R
Aluminum IMS with heatsink, R
Note
•T
= 55 °C, TJ = 125 °C, footprint 300 mm
A
= 15 °C/W 2.5 2.8
thCA
= 5 °C/W 5.5 6.5
thCA
1.2 1.6
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Sinusoidal waveform 8 A
1600 V
200 A
8 A, TJ = 25 °C 1.10 V
- 40 to 150 °C
VOLTAGE RATINGS
V
, MAXIMUM
PART NUMBER
8EWS16SPbF 1600 1700 0.5
Document Number: 94350 For technical questions, contact: diodestech@vishay.com Revision: 01-Jul-09 1
RRM
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
AT 150 °C
I
RRM
mA
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8EWS16SPbF High Voltage Series
Vishay High Power Products
Surface Mountable
Input Rectifier Diode, 8 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
Maximum I
Maximum I
t for fusing I2t
t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1450 A2√s
F(AV)
I
FSM
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
TC = 105 °C, 180° conduction half sine wave 8
10 ms sine pulse, rated V
applied 170
RRM
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
applied 130
RRM
10 ms sine pulse, no voltage reapplied 145
8 A, TJ = 25 °C 1.1 V
FM
t
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 0.50
J
V
= Rated V
R
RRM
20 mΩ
0.82 V
0.05
A
A
mA
s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Soldering temperature T
Maximum thermal resistance, junction to case
Typical thermal resistance, junction to ambient (PCB mount)
(1)
Approximate weight
Marking device Case style TO-252AA (D-PAK) 8EWS16S
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994
T
, T
J
Stg
S
R
DC operation 2.5
thJC
R
62
thJA
- 40 to 150
240
1g
0.03 oz.
°C
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94350
2 Revision: 01-Jul-09
8EWS16SPbF High Voltage Series
150
140
130
120
110
100
Temperature (°C)
Maximum Allowable Case
90
80
0
30°
246810
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
140
130
120
110
Temperature (°C)
100
Maximum Allowable Case
90
30°
0
Average Forward Current (A)
8EWS. Series R
60°
Fig. 2 - Current Rating Characteristics
Input Rectifier Diode, 8 A
8EWS. Series R
(DC) = 2.5 °C/W
thJC
Ø
Conduction angle
60°
90°
120°
180°
(DC) = 2.5 °C/W
thJC
Ø
Conduction period
90°
120°
180°
86421012
DC
14 1816
Surface Mountable
Maximum Average Forward
12
Peak Half Sine Wave
Vishay High Power Products
20
18
16
14
12
10
Power Loss (W)
200
180
160
140
120
100
80
Forward Current (A)
60
40
DC 180° 120°
90° 60° 30°
8
6
4
2
0
0
246
Average Forward Current (A)
Conduction period
8EWS. Series
= 150 °C
T
J
81012
Fig. 4 - Forward Power Loss Characteristics
At any rated load condition and with
rated V
8EWS. Series
1
applied following surge.
RRM
Initial TJ = 150 °C
at 60 Hz 0.0083 s at 50 Hz 0.0100 s
10
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
RMS limit
Ø
14
16
100
16
14
12
10
Power Loss (W)
Maximum Average Forward
180° 120°
90° 60° 30°
8
6
4
2
0
0
RMS limit
246
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Ø
Conduction angle
8EWS. Series T
= 150 °C
J
8
10
240
220
200
180
160
140
120
100
Forward Current (A)
Peak Half Sine Wave
80
60
40
0.01
Maximum non-repetitive surge current
8EWS. Series
versus pulse train duration.
Initial TJ = 150 °C No voltage reapplied Rated V
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
RRM
reapplied
1
Document Number: 94350 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 01-Jul-09 3
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