Vishay 8EWF..S Series Data Sheet
I2124 rev. B 10/99
SURFACE MOUNTABLE
FAST SOFT RECOVERY
DIODE
Description/Features
The 8EWF..S fast soft recovery QUIETIR rectifier
series has been optimized for combined short
reverse recovery time, low forward voltage drop
and low leakage current
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
Output rectification and freewheeling diode
in inverters, choppers and converters.
Input rectifications where severe
restrictions on conducted EMI should be met.
QUIET
V
F
t
rr
V
RRM
IR
Series
8EWF..S
< 1.2V @ 8A
= 55ns
200 to 600V
Major Ratings and Characteristics
Characteristics 8EWF..S Units
I
Sinusoidal waveform 8 A
F(AV)
V
RRM
I
FSM
VF@ 8 A, TJ = 25°C 1.2 V
trr@ 1A, 100A/µs 55 ns
T
J
200 to 600 V
170 A
- 40 to 150 °C
Package Outline
TO-252AA (D-Pak)
1
8EWF..S QUIET
t
I
FM
t
rr
Q
rr
I
rr
di
dt
tbta
IR
Series
I2124 rev. B 10/99
Voltage Ratings
V
Part Number
, maximum V
RRM
peak reverse voltage peak reverse voltage 150°C
, maximum non repetitive I
RSM
VVmA
8EWF02S 200 300 3
8EWF04S 400 500
8EWF06S 600 700
Absolute Maximum Ratings
Parameters 8EWF..S Units Conditions
I
Max. Average Forward Current 8 A @ TC = 96° C, 180° conduction half sine wave
F(AV)
I
Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated V
FSM
A
Surge Current 200 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 140 10ms Sine pulse, rated V
A2s
200 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 2000 A2√s t = 0.1 to 10ms, no voltage reapplied
RRM
RRM
applied
applied
RRM
Electrical Specifications
Parameters 8EWF..S Units Conditions
VFMMax. Forward Voltage Drop 1.2 V @ 8A, TJ = 25°C
rtForward slope resistance 16 mΩ
V
Threshold voltage 1.13 V
F(TO)
IRMMax. Reverse Leakage Current 0.1 TJ = 25 °C
3T
mA
TJ = 150°C
= 150 °C
J
Typical Reverse Recovery Characteristics
Parameters 8EWF..S Units
trrReverse Recovery Time 140 ns IF @ 8Apk
IrrReverse Recovery Current 2.6 A @ 25A/µs
QrrReverse Recovery Charge 0.25 µC @ TJ = 25°C
S Snap Factor tb/ta 0.5 -
2
Conditions
VR = rated V
RRM
8EWF..S QUIET
Thermal-Mechanical Specifications
Parameters 8EWF..S Units Conditions
TJMax. Junction Temperature Range - 40 to 150 °C
Max. Storage Temperature Range - 40 to 150 °C
T
stg
Soldering Temperature 240 °C for 10 seconds
R
Max. Thermal Resistance Junction 2.5 °C/W DC operation
thJC
to Case
R
Typ. Thermal Resistance Junction 50 °C/W
thJA
to Ambient (PCB Mount)**
wt Approximate Weight 1(0.03) g (oz.)
Case Style TO-252AA (D-Pak)
**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
IR
Series
I2124 rev. B 10/99
150
140
130
120
110
100
90
80
70
60
Maximum Allowable Case Temperature (°C)
0123456789
Average Forward Current (A)
8EWF..S Series
R (DC) = 2.5 °C/W
thJC
Conduction Angle
30°
60°
90°
Fig. 1 - Current Rating Characteristics
12
180°
10
8
6
4
2
0
Maximum Average Forward P ower Loss (W)
120°
90°
60°
30°
RMS Limi t
Conduc t i o n Ang l e
8EWF..S Ser ie s
T = 150°C
J
0123456789
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
120°
180°
150
140
130
120
110
Maximum Allowable Case Temperature (°C)
100
90
80
70
30°
02468101214
Average Forward Current (A)
8EW F. .S Series
R (DC) = 2.5 °C/W
thJC
Conduction Period
60°
90°
120°
180°
DC
Fig. 2 - Current Rating Characteristics
16
DC
180°
14
120°
90°
12
60°
30°
10
8
RMS Limit
6
4
2
0
Maximum Average Forward Power Loss (W)
02468101214
Average Forward Cu rrent (A)
Conduction P eriod
8EW F.. S Series
T = 150°C
J
Fig. 4 - Forward Power Loss Characteristics
3
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