Vishay 8EWF..SPbF Soft Recovery Series Data Sheet

8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable
Fast Soft Recovery Diode, 8 A
Base
common
cathode
+
2
The 8EWF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop and low leakage current.
The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
This series is designed and qualified for industrial level and
D-PAK
1
--
Anode
3 Anode
lead (Pb)-free.
PRODUCT SUMMARY
VF at 8 A < 1.3 V
t
rr
V
RRM
80 ns
1000/1200 V
APPLICATIONS
• Output rectification and freewheeling diode in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
FEATURES/DESCRIPTION
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
Sinusoidal waveform 8 A
1000/1200 V
170 A
8 A, TJ = 25 °C 1.3 V
1 A, 100 A/µs 80 ns
Range - 40 to 150 °C
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
8EWF10SPbF 1000 1100
8EWF12SPbF 1200 1300
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current
Maximum I
Maximum I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94109 For technical questions, contact: diodes-tech@vishay.com Revision: 08-Jul-08 1
t for fusing I2t
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2000 A2√s
F(AV)
I
FSM
TC = 94 °C, 180° conduction half sine wave 8
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 200
applied 170
RRM
applied 144
RRM
A
A
s
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8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable
Fast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
rr
rr
Reverse recovery charge Q
Snap factor S 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Typical thermal resistance, junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device Case style D-PAK (TO-252AA) 8EWF12S
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994
T
, T
J
R
thJC
R
thJA
8 A, TJ = 25 °C 1.3 V
t
rr
Stg
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 4
J
IF at 8 Apk
25 A/µs
= 25 °C
T
J
V
= Rated V
R
RRM
270 ns
4.2 A
C
25.6 mΩ
0.93 V
0.1
- 40 to 150 °C
DC operation 2.5
(1)
For 10 seconds 240 °C
S
50
1g
0.03 oz.
I
FM
t
rr
t
atb
di dt
mA
I
rr
°C/W
t
Q
rr
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Document Number: 94109
2 Revision: 08-Jul-08
8EWF..SPbF Soft Recovery Series
150
140
130
120
110
100
90
Temperature (°C)
Maximum Allowable Case
70
60
0
150
140
130
120
110
100
90
Temperature (°C)
80
Maximum Allowable Case
70
60
04
Surface Mountable
Fast Soft Recovery Diode, 8 A
8EWF.. S Series
(DC) = 2.5 °C/W
R
thJC
Ø
Conduction angle
30°
90°
120°
7
18
86
60°
4
18029
3
5
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
8EWF..S Series
(DC) = 2.5 °C/W
R
thJC
Ø
Conduction period
30°
60°
90°
120°
2
8
6
18
DC
1210
14
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
18
16
14
12
10
8
6
Power Loss (W)
4
Maximum Average Forward
2
0
180
170
160
150
140
130
120
110
Forward Current (A)
Peak Half Sine Wave
100
90
80
Vishay High Power Products
DC 180° 120° 90° 60° 30°
8EWF..S Series T
= 150 °C
J
2
0
6
84
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
At any rated load condition and with rated V
8EWF..S Series
1 10 100
applied following surge.
RRM
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
RMS limit
Ø
Conduction period
12
10
Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
14
12
10
8
6
4
Power Loss (W)
2
Maximum Average Forward
0
0
180° 120° 90° 60° 30°
231
5
4
RMS limit
Ø
Conduction angle
8EWF..S Series
= 150 °C
T
J
6
7
8
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
9
200
190
180
170
160
150
140
130
120
110
Forward Current (A)
Peak Half Sine Wave
100
90
80
0.01 0.1
Maximum non-repetitive surge current versus pulse train duration.
Initial TJ = 150 °C No voltage reapplied Rated V
8EWF..S Series
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
RRM
reapplied
1
Document Number: 94109 For technical questions, contact: diodes-tech@vishay.com
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Revision: 08-Jul-08 3
8EWF..SPbF Soft Recovery Series
Vishay High Power Products
1000
TJ = 25 °C
= 150 °C
T
100
10
Instantaneous Forward Current (A)
0.6
0.5
0.4
0.3
0.2
- Maximum Reverse
Recovery Time (µs)
rr
t
0.1
J
8EWF..S Series
1
0.5 2.0 3.0
1.5 3.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
8EWF..S Series
= 25 °C
T
J
Surface Mountable
Fast Soft Recovery Diode, 8 A
2.0
1.6
1.2
0.8
- Maximum Reverse
rr
Recovery Charge (µC)
0.4
Q
4.01.0 2.5
IFM = 10 A
I
= 8 A
FM
= 5 A
I
FM
I
= 2 A
FM
I
= 1 A
FM
4.5
0
Fig. 10 - Recovery Charge Characteristics, T
5
4
3
2
- Maximum Reverse
rr
Recovery Charge (µC)
1
Q
8EWF..S Series
= 25 °C
T
J
0
80 120 200
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
16040
dI/dt - Rate of Fall of Forward Current (A/µs)
= 25 °C
J
8EWF..S Series
= 150 °C
T
J
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0
0 40 120 200
80
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
0.8
8EWF..S Series
= 150 °C
T
J
0.6
0.4
- Maximum Reverse
0.2
Recovery Time (µs)
rr
t
0
40
0 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
160
= 25 °C
J
IFM = 10 A I
= 8 A
FM
I
= 5 A
FM
= 2 A
I
FM
= 1 A
I
FM
= 150 °C
J
0
0 160
40 200
80 120
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
20
8EWF..S Series
= 25 °C
T
J
16
12
8
- Maximum Reverse Recovery Current (A)
rr
4
I
0
40
0 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
= 150 °C
J
= 25 °C
J
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Document Number: 94109
4 Revision: 08-Jul-08
8EWF..SPbF Soft Recovery Series
Surface Mountable
Vishay High Power Products
Fast Soft Recovery Diode, 8 A
25
8EWF..S Series
= 150 °C
T
20
15
10
- Maximum Reverse Recovery Current (A)
rr
I
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
J
IFM = 10 A
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
I
FM
5
0
40 120 160
0 80 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Steady state value
(DC operation)
1
Single pulse
0.1
- Transient Thermal Impedance (°C/W)
0.0001 0.001 0.01 0.1
thJC
Z
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Characteristics
thJC
8EWF..S Series
1
Document Number: 94109 For technical questions, contact: diodes-tech@vishay.com
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Revision: 08-Jul-08 5
8EWF..SPbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
8 E W F 12 S TR PbF
1 - Current rating (8 = 8 A)
2 - Circuit configuration:
3 - Package:
4 - Type of silicon:
5 - Voltage code x 100 = V
6 - S = Surface mountable
7 -
8 -
Surface Mountable
Fast Soft Recovery Diode, 8 A
51324678
E = Single diode
W = D-PAK
F = Fast soft recovery rectifier
RRM
TR = Tape and reel
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
None = Standard production
PbF = Lead (Pb)-free
10 = 1000 V 12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95016
Part marking information http://www.vishay.com/doc?95059
Packaging information http://www.vishay.com/doc?95033
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 6 Revision: 08-Jul-08
Document Number: 94109
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay High Power Products
Ø 2
(2) L5
b2
SYMBOL
(5)
(3)
3
A
L3 (3)
D (5)
b
0.010
Lead tip
0.010
B
L4
M
M
CAB
Detail “C”
CAB
Rotated 90 °CW
Ø 1
Detail “C”
Scale: 20:1
Gauge
plane
L2
E
b3
4
1
2
e
2 x
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
C
A
c2
A
Seating plane
Ø
c
(L1)
C
C
L
D1
H
3241
A
A1
NOTES SYMBOL
E1
0.488 (12.40)
0.409 (10.40)
0.06
(1.524)
0.093 (2.38)
0.085 (2.18)
H
(7)
C
Seating
plane
MILLIMETERS INCHES
MIN.
Pad layout
0.265 MIN.
(6.74)
0.245 (6.23)
0.089 (2.28)
NOTES
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 10° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 15° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension uncontrolled in L5
(3)
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4)
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5)
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(6)
Dimension b1 and c1 applied to base metal only
(7)
Datum A and B to be determined at datum plane H
(8)
Outline conforms to JEDEC outline TO-252AA
MIN.
MIN.
Document Number: 95016 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 04-Nov-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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